{"id":"https://openalex.org/W2031684353","doi":"https://doi.org/10.1109/essderc.2014.6948757","title":"Analysis of failure mechanisms in erased state of sub 20-nm NAND Flash memory","display_name":"Analysis of failure mechanisms in erased state of sub 20-nm NAND Flash memory","publication_year":2014,"publication_date":"2014-09-01","ids":{"openalex":"https://openalex.org/W2031684353","doi":"https://doi.org/10.1109/essderc.2014.6948757","mag":"2031684353"},"language":"en","primary_location":{"id":"doi:10.1109/essderc.2014.6948757","is_oa":false,"landing_page_url":"https://doi.org/10.1109/essderc.2014.6948757","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2014 44th European Solid State Device Research Conference (ESSDERC)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5041785375","display_name":"Kyung-Hwan Lee","orcid":"https://orcid.org/0000-0003-0614-7110"},"institutions":[{"id":"https://openalex.org/I139264467","display_name":"Seoul National University","ror":"https://ror.org/04h9pn542","country_code":"KR","type":"education","lineage":["https://openalex.org/I139264467"]}],"countries":["KR"],"is_corresponding":true,"raw_author_name":"Kyunghwan Lee","raw_affiliation_strings":["ISRC and School of Electrical Engineering, Seoul National University, Seoul, Korea","ISRC and School of Electrical Engineering, Seoul National University, San 56-1, Shinlim-dong, Kwanak-gu, Seoul 151-742, Korea"],"affiliations":[{"raw_affiliation_string":"ISRC and School of Electrical Engineering, Seoul National University, Seoul, Korea","institution_ids":["https://openalex.org/I139264467"]},{"raw_affiliation_string":"ISRC and School of Electrical Engineering, Seoul National University, San 56-1, Shinlim-dong, Kwanak-gu, Seoul 151-742, Korea","institution_ids":["https://openalex.org/I139264467"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5000348054","display_name":"Duckseoung Kang","orcid":null},"institutions":[{"id":"https://openalex.org/I139264467","display_name":"Seoul National University","ror":"https://ror.org/04h9pn542","country_code":"KR","type":"education","lineage":["https://openalex.org/I139264467"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Duckseoung Kang","raw_affiliation_strings":["ISRC and School of Electrical Engineering, Seoul National University, Seoul, Korea","ISRC and School of Electrical Engineering, Seoul National University, San 56-1, Shinlim-dong, Kwanak-gu, Seoul 151-742, Korea"],"affiliations":[{"raw_affiliation_string":"ISRC and School of Electrical Engineering, Seoul National University, Seoul, Korea","institution_ids":["https://openalex.org/I139264467"]},{"raw_affiliation_string":"ISRC and School of Electrical Engineering, Seoul National University, San 56-1, Shinlim-dong, Kwanak-gu, Seoul 151-742, Korea","institution_ids":["https://openalex.org/I139264467"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5111914425","display_name":"Hyungcheol Shin","orcid":null},"institutions":[{"id":"https://openalex.org/I139264467","display_name":"Seoul National University","ror":"https://ror.org/04h9pn542","country_code":"KR","type":"education","lineage":["https://openalex.org/I139264467"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Hyungcheol Shin","raw_affiliation_strings":["ISRC and School of Electrical Engineering, Seoul National University, Seoul, Korea","ISRC and School of Electrical Engineering, Seoul National University, San 56-1, Shinlim-dong, Kwanak-gu, Seoul 151-742, Korea"],"affiliations":[{"raw_affiliation_string":"ISRC and School of Electrical Engineering, Seoul National University, Seoul, Korea","institution_ids":["https://openalex.org/I139264467"]},{"raw_affiliation_string":"ISRC and School of Electrical Engineering, Seoul National University, San 56-1, Shinlim-dong, Kwanak-gu, Seoul 151-742, Korea","institution_ids":["https://openalex.org/I139264467"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5111939614","display_name":"Sangjin Kwon","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Sangjin Kwon","raw_affiliation_strings":["Product Assurance Team, Samsung Electronics Co., Ltd., Hwaseong-Si, Gyeonggi-Do, Republic of Korea","Memory Division, Samsung Electronics Co., Ltd., San #16 Banwol-Dong, Hwaseong-Si, Gyeonggi-Do 445-701, Republic of Korea"],"affiliations":[{"raw_affiliation_string":"Product Assurance Team, Samsung Electronics Co., Ltd., Hwaseong-Si, Gyeonggi-Do, Republic of Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Memory Division, Samsung Electronics Co., Ltd., San #16 Banwol-Dong, Hwaseong-Si, Gyeonggi-Do 445-701, Republic of Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5056519403","display_name":"Shin Hyung Kim","orcid":"https://orcid.org/0000-0003-4058-7697"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Shinhyung Kim","raw_affiliation_strings":["Product Assurance Team, Samsung Electronics Co., Ltd., Hwaseong-Si, Gyeonggi-Do, Republic of Korea","Memory Division, Samsung Electronics Co., Ltd., San #16 Banwol-Dong, Hwaseong-Si, Gyeonggi-Do 445-701, Republic of Korea"],"affiliations":[{"raw_affiliation_string":"Product Assurance Team, Samsung Electronics Co., Ltd., Hwaseong-Si, Gyeonggi-Do, Republic of Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Memory Division, Samsung Electronics Co., Ltd., San #16 Banwol-Dong, Hwaseong-Si, Gyeonggi-Do 445-701, Republic of Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5108930083","display_name":"Yuchul Hwang","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Yuchul Hwang","raw_affiliation_strings":["Product Assurance Team, Samsung Electronics Co., Ltd., Hwaseong-Si, Gyeonggi-Do, Republic of Korea","Memory Division, Samsung Electronics Co., Ltd., San #16 Banwol-Dong, Hwaseong-Si, Gyeonggi-Do 445-701, Republic of Korea"],"affiliations":[{"raw_affiliation_string":"Product Assurance Team, Samsung Electronics Co., Ltd., Hwaseong-Si, Gyeonggi-Do, Republic of Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Memory Division, Samsung Electronics Co., Ltd., San #16 Banwol-Dong, Hwaseong-Si, Gyeonggi-Do 445-701, Republic of Korea","institution_ids":["https://openalex.org/I2250650973"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":6,"corresponding_author_ids":["https://openalex.org/A5041785375"],"corresponding_institution_ids":["https://openalex.org/I139264467"],"apc_list":null,"apc_paid":null,"fwci":1.724,"has_fulltext":false,"cited_by_count":13,"citation_normalized_percentile":{"value":0.86164389,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":97},"biblio":{"volume":"4","issue":null,"first_page":"58","last_page":"61"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11181","display_name":"Advanced Data Storage Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/1705","display_name":"Computer Networks and Communications"},"field":{"id":"https://openalex.org/fields/17","display_name":"Computer Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11181","display_name":"Advanced Data Storage Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/1705","display_name":"Computer Networks and Communications"},"field":{"id":"https://openalex.org/fields/17","display_name":"Computer Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10049","display_name":"Magnetic properties of thin films","score":0.9961000084877014,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/quantum-tunnelling","display_name":"Quantum tunnelling","score":0.820301353931427},{"id":"https://openalex.org/keywords/nand-gate","display_name":"NAND gate","score":0.6444705128669739},{"id":"https://openalex.org/keywords/oxide","display_name":"Oxide","score":0.5960894823074341},{"id":"https://openalex.org/keywords/charge","display_name":"Charge (physics)","score":0.5555791258811951},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.5292379856109619},{"id":"https://openalex.org/keywords/electron","display_name":"Electron","score":0.5078170895576477},{"id":"https://openalex.org/keywords/flash-memory","display_name":"Flash memory","score":0.4832085371017456},{"id":"https://openalex.org/keywords/non-volatile-memory","display_name":"Non-volatile memory","score":0.47609126567840576},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.4610087275505066},{"id":"https://openalex.org/keywords/trap","display_name":"Trap (plumbing)","score":0.4430640637874603},{"id":"https://openalex.org/keywords/flash","display_name":"Flash (photography)","score":0.43743741512298584},{"id":"https://openalex.org/keywords/energy","display_name":"Energy (signal processing)","score":0.43164852261543274},{"id":"https://openalex.org/keywords/activation-energy","display_name":"Activation energy","score":0.4166001081466675},{"id":"https://openalex.org/keywords/gate-oxide","display_name":"Gate oxide","score":0.4153355360031128},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.32379966974258423},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.31984376907348633},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.3021159768104553},{"id":"https://openalex.org/keywords/logic-gate","display_name":"Logic gate","score":0.26655691862106323},{"id":"https://openalex.org/keywords/chemistry","display_name":"Chemistry","score":0.24232575297355652},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.15621721744537354},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.1518058180809021},{"id":"https://openalex.org/keywords/embedded-system","display_name":"Embedded system","score":0.13365721702575684},{"id":"https://openalex.org/keywords/physical-chemistry","display_name":"Physical chemistry","score":0.08930981159210205},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.0770639181137085}],"concepts":[{"id":"https://openalex.org/C120398109","wikidata":"https://www.wikidata.org/wiki/Q175751","display_name":"Quantum tunnelling","level":2,"score":0.820301353931427},{"id":"https://openalex.org/C124296912","wikidata":"https://www.wikidata.org/wiki/Q575178","display_name":"NAND gate","level":3,"score":0.6444705128669739},{"id":"https://openalex.org/C2779851234","wikidata":"https://www.wikidata.org/wiki/Q50690","display_name":"Oxide","level":2,"score":0.5960894823074341},{"id":"https://openalex.org/C188082385","wikidata":"https://www.wikidata.org/wiki/Q73792","display_name":"Charge (physics)","level":2,"score":0.5555791258811951},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5292379856109619},{"id":"https://openalex.org/C147120987","wikidata":"https://www.wikidata.org/wiki/Q2225","display_name":"Electron","level":2,"score":0.5078170895576477},{"id":"https://openalex.org/C2776531357","wikidata":"https://www.wikidata.org/wiki/Q174077","display_name":"Flash memory","level":2,"score":0.4832085371017456},{"id":"https://openalex.org/C177950962","wikidata":"https://www.wikidata.org/wiki/Q10997658","display_name":"Non-volatile memory","level":2,"score":0.47609126567840576},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.4610087275505066},{"id":"https://openalex.org/C121099081","wikidata":"https://www.wikidata.org/wiki/Q665580","display_name":"Trap (plumbing)","level":2,"score":0.4430640637874603},{"id":"https://openalex.org/C2777526259","wikidata":"https://www.wikidata.org/wiki/Q221836","display_name":"Flash (photography)","level":2,"score":0.43743741512298584},{"id":"https://openalex.org/C186370098","wikidata":"https://www.wikidata.org/wiki/Q442787","display_name":"Energy (signal processing)","level":2,"score":0.43164852261543274},{"id":"https://openalex.org/C95121573","wikidata":"https://www.wikidata.org/wiki/Q190474","display_name":"Activation energy","level":2,"score":0.4166001081466675},{"id":"https://openalex.org/C2361726","wikidata":"https://www.wikidata.org/wiki/Q5527031","display_name":"Gate oxide","level":4,"score":0.4153355360031128},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.32379966974258423},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.31984376907348633},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3021159768104553},{"id":"https://openalex.org/C131017901","wikidata":"https://www.wikidata.org/wiki/Q170451","display_name":"Logic gate","level":2,"score":0.26655691862106323},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.24232575297355652},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.15621721744537354},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.1518058180809021},{"id":"https://openalex.org/C149635348","wikidata":"https://www.wikidata.org/wiki/Q193040","display_name":"Embedded system","level":1,"score":0.13365721702575684},{"id":"https://openalex.org/C147789679","wikidata":"https://www.wikidata.org/wiki/Q11372","display_name":"Physical chemistry","level":1,"score":0.08930981159210205},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.0770639181137085},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C153294291","wikidata":"https://www.wikidata.org/wiki/Q25261","display_name":"Meteorology","level":1,"score":0.0},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/essderc.2014.6948757","is_oa":false,"landing_page_url":"https://doi.org/10.1109/essderc.2014.6948757","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2014 44th European Solid State Device Research Conference (ESSDERC)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[{"id":"https://openalex.org/F4320332195","display_name":"Samsung","ror":"https://ror.org/04w3jy968"}],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":10,"referenced_works":["https://openalex.org/W1996004684","https://openalex.org/W2068708188","https://openalex.org/W2087853723","https://openalex.org/W2093446542","https://openalex.org/W2127829824","https://openalex.org/W2138701321","https://openalex.org/W2141252802","https://openalex.org/W2159231239","https://openalex.org/W2168550103","https://openalex.org/W6680912909"],"related_works":["https://openalex.org/W1580039394","https://openalex.org/W2086578073","https://openalex.org/W2537420636","https://openalex.org/W2036350002","https://openalex.org/W2970146629","https://openalex.org/W2489256297","https://openalex.org/W2076885774","https://openalex.org/W1903254700","https://openalex.org/W1969077618","https://openalex.org/W1965767061"],"abstract_inverted_index":{"In":[0],"this":[1],"paper,":[2],"we":[3],"analyzed":[4],"the":[5,12,45,48,60,63,68,73,78,87,91,98,104,107,116,122,126,141],"characteristics":[6],"of":[7,16,129,136],"dominant":[8,95,145],"failure":[9],"mechanisms":[10,40],"in":[11,72],"erased":[13],"(ERS)":[14],"state":[15,75],"sub":[17],"20-nm":[18],"NAND":[19],"Flash":[20],"memory":[21],"with":[22],"an":[23],"accurate":[24],"compact":[25],"model.":[26],"As":[27],"a":[28],"result,":[29],"it":[30],"was":[31],"observed":[32],"that":[33],"various":[34],"charge":[35,38,61,69,92,142],"loss":[36,143],"and":[37,47,115,133],"gain":[39,70,93],"are":[41],"mixed":[42],"together.":[43],"While":[44],"detrapping":[46,108],"interface":[49],"trap":[50],"recovery":[51],"(N":[52],"<inf":[53],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[54],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">it</inf>":[55],")":[56],"mechanism":[57,71],"contribute":[58],"to":[59,77,97],"loss,":[62],"trap-assisted":[64],"tunneling":[65,83,137],"(TAT)":[66],"is":[67,94],"ERS":[74],"due":[76,96],"negative":[79],"electric":[80],"field":[81],"across":[82],"oxide":[84,138],"layer.":[85,139],"At":[86],"less":[88],"cycled":[89],"cells,":[90],"TAT":[99,117],"mechanism.":[100],"However,":[101],"as":[102,121],"increasing":[103],"cycling":[105,148],"times,":[106],"component":[109,118],"becomes":[110,144],"larger":[111],"by":[112],"trapped":[113],"carriers":[114],"gets":[119],"reduced":[120],"detrapped":[123],"electrons":[124],"raise":[125],"energy":[127,134],"level":[128],"floating":[130],"gate":[131],"(FG)":[132],"barrier":[135],"Therefore,":[140],"at":[146],"increased":[147],"times.":[149]},"counts_by_year":[{"year":2024,"cited_by_count":1},{"year":2022,"cited_by_count":1},{"year":2021,"cited_by_count":2},{"year":2020,"cited_by_count":4},{"year":2017,"cited_by_count":1},{"year":2016,"cited_by_count":3},{"year":2015,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}