{"id":"https://openalex.org/W2051716340","doi":"https://doi.org/10.1109/essderc.2013.6818830","title":"Advantage of TiN Schottky gate over conventional Ni for improved electrical characteristics in AlGaN/GaN HEMT","display_name":"Advantage of TiN Schottky gate over conventional Ni for improved electrical characteristics in AlGaN/GaN HEMT","publication_year":2013,"publication_date":"2013-09-01","ids":{"openalex":"https://openalex.org/W2051716340","doi":"https://doi.org/10.1109/essderc.2013.6818830","mag":"2051716340"},"language":"en","primary_location":{"id":"doi:10.1109/essderc.2013.6818830","is_oa":false,"landing_page_url":"https://doi.org/10.1109/essderc.2013.6818830","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5049888413","display_name":"Takamasa Kawanago","orcid":"https://orcid.org/0000-0001-5323-7085"},"institutions":[{"id":"https://openalex.org/I114531698","display_name":"Tokyo Institute of Technology","ror":"https://ror.org/0112mx960","country_code":"JP","type":"education","lineage":["https://openalex.org/I114531698"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"T. Kawanago","raw_affiliation_strings":["Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Yokohama, Japan","Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Yokohama, Japan","institution_ids":["https://openalex.org/I114531698"]},{"raw_affiliation_string":"Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan","institution_ids":["https://openalex.org/I114531698"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5007637720","display_name":"Kuniyuki Kakushima","orcid":"https://orcid.org/0000-0002-8527-1402"},"institutions":[{"id":"https://openalex.org/I114531698","display_name":"Tokyo Institute of Technology","ror":"https://ror.org/0112mx960","country_code":"JP","type":"education","lineage":["https://openalex.org/I114531698"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"K. Kakushima","raw_affiliation_strings":["Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Yokohama, Japan","Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Yokohama, Japan","institution_ids":["https://openalex.org/I114531698"]},{"raw_affiliation_string":"Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan","institution_ids":["https://openalex.org/I114531698"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5039593848","display_name":"Yuki Kataoka","orcid":"https://orcid.org/0000-0001-7982-5213"},"institutions":[{"id":"https://openalex.org/I114531698","display_name":"Tokyo Institute of Technology","ror":"https://ror.org/0112mx960","country_code":"JP","type":"education","lineage":["https://openalex.org/I114531698"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Y. Kataoka","raw_affiliation_strings":["Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Yokohama, Japan","Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Yokohama, Japan","institution_ids":["https://openalex.org/I114531698"]},{"raw_affiliation_string":"Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan","institution_ids":["https://openalex.org/I114531698"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5049861668","display_name":"Akira Nishiyama","orcid":"https://orcid.org/0000-0001-5971-820X"},"institutions":[{"id":"https://openalex.org/I114531698","display_name":"Tokyo Institute of Technology","ror":"https://ror.org/0112mx960","country_code":"JP","type":"education","lineage":["https://openalex.org/I114531698"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"A. Nishiyama","raw_affiliation_strings":["Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Yokohama, Japan","Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Yokohama, Japan","institution_ids":["https://openalex.org/I114531698"]},{"raw_affiliation_string":"Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan","institution_ids":["https://openalex.org/I114531698"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5027073254","display_name":"Nobuyuki Sugii","orcid":"https://orcid.org/0000-0001-8006-8854"},"institutions":[{"id":"https://openalex.org/I114531698","display_name":"Tokyo Institute of Technology","ror":"https://ror.org/0112mx960","country_code":"JP","type":"education","lineage":["https://openalex.org/I114531698"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"N. Sugii","raw_affiliation_strings":["Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Yokohama, Japan","Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Yokohama, Japan","institution_ids":["https://openalex.org/I114531698"]},{"raw_affiliation_string":"Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan","institution_ids":["https://openalex.org/I114531698"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5044481452","display_name":"Hitoshi Wakabayashi","orcid":"https://orcid.org/0000-0001-5509-521X"},"institutions":[{"id":"https://openalex.org/I114531698","display_name":"Tokyo Institute of Technology","ror":"https://ror.org/0112mx960","country_code":"JP","type":"education","lineage":["https://openalex.org/I114531698"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"H. Wakabayashi","raw_affiliation_strings":["Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Yokohama, Japan","Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Yokohama, Japan","institution_ids":["https://openalex.org/I114531698"]},{"raw_affiliation_string":"Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan","institution_ids":["https://openalex.org/I114531698"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5089215725","display_name":"Kazuo Tsutsui","orcid":"https://orcid.org/0000-0002-5472-5539"},"institutions":[{"id":"https://openalex.org/I114531698","display_name":"Tokyo Institute of Technology","ror":"https://ror.org/0112mx960","country_code":"JP","type":"education","lineage":["https://openalex.org/I114531698"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"K. Tsutsui","raw_affiliation_strings":["Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Yokohama, Japan","Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Yokohama, Japan","institution_ids":["https://openalex.org/I114531698"]},{"raw_affiliation_string":"Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan","institution_ids":["https://openalex.org/I114531698"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5019024393","display_name":"Kenji Natori","orcid":"https://orcid.org/0000-0001-6967-5258"},"institutions":[{"id":"https://openalex.org/I114531698","display_name":"Tokyo Institute of Technology","ror":"https://ror.org/0112mx960","country_code":"JP","type":"education","lineage":["https://openalex.org/I114531698"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"K. Natori","raw_affiliation_strings":["Frontier Research Center, Tokyo Institute of Technology","[Frontier Research Center, Tokyo Institute of Technology]"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Frontier Research Center, Tokyo Institute of Technology","institution_ids":["https://openalex.org/I114531698"]},{"raw_affiliation_string":"[Frontier Research Center, Tokyo Institute of Technology]","institution_ids":["https://openalex.org/I114531698"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5102754192","display_name":"Hiroshi Iwai","orcid":"https://orcid.org/0000-0001-5550-4140"},"institutions":[{"id":"https://openalex.org/I114531698","display_name":"Tokyo Institute of Technology","ror":"https://ror.org/0112mx960","country_code":"JP","type":"education","lineage":["https://openalex.org/I114531698"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"H. Iwai","raw_affiliation_strings":["Frontier Research Center, Tokyo Institute of Technology","[Frontier Research Center, Tokyo Institute of Technology]"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Frontier Research Center, Tokyo Institute of Technology","institution_ids":["https://openalex.org/I114531698"]},{"raw_affiliation_string":"[Frontier Research Center, Tokyo Institute of Technology]","institution_ids":["https://openalex.org/I114531698"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":9,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.24,"has_fulltext":false,"cited_by_count":12,"citation_normalized_percentile":{"value":0.61472635,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":98},"biblio":{"volume":null,"issue":null,"first_page":"107","last_page":"110"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/high-electron-mobility-transistor","display_name":"High-electron-mobility transistor","score":0.850919246673584},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.7928913235664368},{"id":"https://openalex.org/keywords/tin","display_name":"Tin","score":0.7430962324142456},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.6986244916915894},{"id":"https://openalex.org/keywords/schottky-diode","display_name":"Schottky diode","score":0.6451319456100464},{"id":"https://openalex.org/keywords/schottky-barrier","display_name":"Schottky barrier","score":0.5480473637580872},{"id":"https://openalex.org/keywords/nitrogen","display_name":"Nitrogen","score":0.4248195290565491},{"id":"https://openalex.org/keywords/current","display_name":"Current (fluid)","score":0.42125117778778076},{"id":"https://openalex.org/keywords/metal","display_name":"Metal","score":0.4196435511112213},{"id":"https://openalex.org/keywords/layer","display_name":"Layer (electronics)","score":0.4188283085823059},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.23341509699821472},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.22236847877502441},{"id":"https://openalex.org/keywords/metallurgy","display_name":"Metallurgy","score":0.1604669690132141},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.15050044655799866},{"id":"https://openalex.org/keywords/chemistry","display_name":"Chemistry","score":0.08903172612190247},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.08064287900924683}],"concepts":[{"id":"https://openalex.org/C162057924","wikidata":"https://www.wikidata.org/wiki/Q1617706","display_name":"High-electron-mobility transistor","level":4,"score":0.850919246673584},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7928913235664368},{"id":"https://openalex.org/C525849907","wikidata":"https://www.wikidata.org/wiki/Q1096","display_name":"Tin","level":2,"score":0.7430962324142456},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.6986244916915894},{"id":"https://openalex.org/C205200001","wikidata":"https://www.wikidata.org/wiki/Q176066","display_name":"Schottky diode","level":3,"score":0.6451319456100464},{"id":"https://openalex.org/C16115445","wikidata":"https://www.wikidata.org/wiki/Q2391942","display_name":"Schottky barrier","level":3,"score":0.5480473637580872},{"id":"https://openalex.org/C537208039","wikidata":"https://www.wikidata.org/wiki/Q627","display_name":"Nitrogen","level":2,"score":0.4248195290565491},{"id":"https://openalex.org/C148043351","wikidata":"https://www.wikidata.org/wiki/Q4456944","display_name":"Current (fluid)","level":2,"score":0.42125117778778076},{"id":"https://openalex.org/C544153396","wikidata":"https://www.wikidata.org/wiki/Q11426","display_name":"Metal","level":2,"score":0.4196435511112213},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.4188283085823059},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.23341509699821472},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.22236847877502441},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.1604669690132141},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.15050044655799866},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.08903172612190247},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.08064287900924683},{"id":"https://openalex.org/C178790620","wikidata":"https://www.wikidata.org/wiki/Q11351","display_name":"Organic chemistry","level":1,"score":0.0},{"id":"https://openalex.org/C78434282","wikidata":"https://www.wikidata.org/wiki/Q11656","display_name":"Diode","level":2,"score":0.0},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/essderc.2013.6818830","is_oa":false,"landing_page_url":"https://doi.org/10.1109/essderc.2013.6818830","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.46000000834465027,"id":"https://metadata.un.org/sdg/6","display_name":"Clean water and sanitation"}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":12,"referenced_works":["https://openalex.org/W135603956","https://openalex.org/W1982240341","https://openalex.org/W2004945863","https://openalex.org/W2034525477","https://openalex.org/W2048437890","https://openalex.org/W2049275801","https://openalex.org/W2076514869","https://openalex.org/W2076750356","https://openalex.org/W2095354758","https://openalex.org/W2110201904","https://openalex.org/W2134415077","https://openalex.org/W2328407804"],"related_works":["https://openalex.org/W2147656057","https://openalex.org/W1540585561","https://openalex.org/W1981646027","https://openalex.org/W2917180890","https://openalex.org/W2614156624","https://openalex.org/W2911343812","https://openalex.org/W2064836534","https://openalex.org/W1501882044","https://openalex.org/W2124971553","https://openalex.org/W2610840581"],"abstract_inverted_index":{"Metal":[0],"induced":[1],"effects":[2],"on":[3,112],"electrical":[4],"characteristics":[5],"in":[6,48,70,75,116],"AlGaN/GaN":[7,71],"Schottky":[8,23],"HEMT":[9],"are":[10,51,103],"reported.":[11],"Focus":[12],"is":[13,30,65],"given":[14],"to":[15,22,53,56,105],"the":[16,36,57,62,68,86,89,93,98,101,109,113],"collapse":[17,37,96],"of":[18,38,79,88,92,97],"drain":[19,39,99,114],"current":[20,40,58],"attributed":[21],"metal.":[24],"Of":[25],"particular":[26],"interest":[27],"for":[28,67,84],"discussion":[29],"that":[31,61],"TiN":[32,49],"gate":[33,50,110],"can":[34],"suppresses":[35],"compared":[41],"with":[42],"conventional":[43],"Ni":[44],"gate.":[45],"Nitrogen":[46],"concentrations":[47],"found":[52],"be":[54,82,106],"correlated":[55],"collapse,":[59],"indicating":[60],"nitrogen":[63,80],"vacancy":[64],"responsible":[66],"traps":[69,102],"HEMT.":[72],"The":[73],"reduction":[74],"a":[76],"concentration":[77],"gradient":[78],"should":[81],"accomplished":[83],"preventing":[85],"formation":[87],"traps.":[90],"Because":[91],"metal":[94],"dependent":[95],"current,":[100],"considered":[104],"formed":[107],"under":[108],"edge":[111],"side":[115],"AlGaN":[117],"layer.":[118]},"counts_by_year":[{"year":2026,"cited_by_count":1},{"year":2025,"cited_by_count":3},{"year":2022,"cited_by_count":1},{"year":2021,"cited_by_count":1},{"year":2020,"cited_by_count":1},{"year":2019,"cited_by_count":1},{"year":2018,"cited_by_count":2},{"year":2017,"cited_by_count":1},{"year":2014,"cited_by_count":1}],"updated_date":"2026-06-11T09:08:48.828518","created_date":"2025-10-10T00:00:00"}