{"id":"https://openalex.org/W2094782008","doi":"https://doi.org/10.1109/essderc.2012.6343395","title":"Critical gate module process enabling the implementation of a 50A/600V AlGaN/GaN MOS-HEMT","display_name":"Critical gate module process enabling the implementation of a 50A/600V AlGaN/GaN MOS-HEMT","publication_year":2012,"publication_date":"2012-09-01","ids":{"openalex":"https://openalex.org/W2094782008","doi":"https://doi.org/10.1109/essderc.2012.6343395","mag":"2094782008"},"language":"en","primary_location":{"id":"doi:10.1109/essderc.2012.6343395","is_oa":false,"landing_page_url":"https://doi.org/10.1109/essderc.2012.6343395","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2012 Proceedings of the European Solid-State Device Research Conference (ESSDERC)","raw_type":"proceedings-article"},"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5043790757","display_name":"Sameh Khalil","orcid":"https://orcid.org/0000-0001-9967-1231"},"institutions":[{"id":"https://openalex.org/I200576644","display_name":"HRL Laboratories (United States)","ror":"https://ror.org/05p7te762","country_code":"US","type":"company","lineage":["https://openalex.org/I200576644"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"S. G. Khalil","raw_affiliation_strings":["HRL Laboratories LLC, Malibu, CA, USA","HRL Labs., LLC., Malibu, CA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"HRL Laboratories LLC, Malibu, CA, USA","institution_ids":["https://openalex.org/I200576644"]},{"raw_affiliation_string":"HRL Labs., LLC., Malibu, CA, USA","institution_ids":["https://openalex.org/I200576644"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5030302953","display_name":"Rongming Chu","orcid":"https://orcid.org/0000-0003-3262-5120"},"institutions":[{"id":"https://openalex.org/I200576644","display_name":"HRL Laboratories (United States)","ror":"https://ror.org/05p7te762","country_code":"US","type":"company","lineage":["https://openalex.org/I200576644"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"R. Chu","raw_affiliation_strings":["HRL Laboratories LLC, Malibu, CA, USA","HRL Labs., LLC., Malibu, CA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"HRL Laboratories LLC, Malibu, CA, USA","institution_ids":["https://openalex.org/I200576644"]},{"raw_affiliation_string":"HRL Labs., LLC., Malibu, CA, USA","institution_ids":["https://openalex.org/I200576644"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5006364317","display_name":"R. Li","orcid":null},"institutions":[{"id":"https://openalex.org/I200576644","display_name":"HRL Laboratories (United States)","ror":"https://ror.org/05p7te762","country_code":"US","type":"company","lineage":["https://openalex.org/I200576644"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"R. Li","raw_affiliation_strings":["HRL Laboratories LLC, Malibu, CA, USA","HRL Labs., LLC., Malibu, CA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"HRL Laboratories LLC, Malibu, CA, USA","institution_ids":["https://openalex.org/I200576644"]},{"raw_affiliation_string":"HRL Labs., LLC., Malibu, CA, USA","institution_ids":["https://openalex.org/I200576644"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5111698769","display_name":"D. Wong","orcid":null},"institutions":[{"id":"https://openalex.org/I200576644","display_name":"HRL Laboratories (United States)","ror":"https://ror.org/05p7te762","country_code":"US","type":"company","lineage":["https://openalex.org/I200576644"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"D. Wong","raw_affiliation_strings":["HRL Laboratories LLC, Malibu, CA, USA","HRL Labs., LLC., Malibu, CA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"HRL Laboratories LLC, Malibu, CA, USA","institution_ids":["https://openalex.org/I200576644"]},{"raw_affiliation_string":"HRL Labs., LLC., Malibu, CA, USA","institution_ids":["https://openalex.org/I200576644"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5032550252","display_name":"S. Newell","orcid":null},"institutions":[{"id":"https://openalex.org/I200576644","display_name":"HRL Laboratories (United States)","ror":"https://ror.org/05p7te762","country_code":"US","type":"company","lineage":["https://openalex.org/I200576644"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"S. Newell","raw_affiliation_strings":["HRL Laboratories LLC, Malibu, CA, USA","HRL Labs., LLC., Malibu, CA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"HRL Laboratories LLC, Malibu, CA, USA","institution_ids":["https://openalex.org/I200576644"]},{"raw_affiliation_string":"HRL Labs., LLC., Malibu, CA, USA","institution_ids":["https://openalex.org/I200576644"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5031494223","display_name":"X. Chen","orcid":null},"institutions":[{"id":"https://openalex.org/I200576644","display_name":"HRL Laboratories (United States)","ror":"https://ror.org/05p7te762","country_code":"US","type":"company","lineage":["https://openalex.org/I200576644"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"X. Chen","raw_affiliation_strings":["HRL Laboratories LLC, Malibu, CA, USA","HRL Labs., LLC., Malibu, CA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"HRL Laboratories LLC, Malibu, CA, USA","institution_ids":["https://openalex.org/I200576644"]},{"raw_affiliation_string":"HRL Labs., LLC., Malibu, CA, USA","institution_ids":["https://openalex.org/I200576644"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5039050956","display_name":"M. Chen","orcid":null},"institutions":[{"id":"https://openalex.org/I200576644","display_name":"HRL Laboratories (United States)","ror":"https://ror.org/05p7te762","country_code":"US","type":"company","lineage":["https://openalex.org/I200576644"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"M. Chen","raw_affiliation_strings":["HRL Laboratories LLC, Malibu, CA, USA","HRL Labs., LLC., Malibu, CA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"HRL Laboratories LLC, Malibu, CA, USA","institution_ids":["https://openalex.org/I200576644"]},{"raw_affiliation_string":"HRL Labs., LLC., Malibu, CA, USA","institution_ids":["https://openalex.org/I200576644"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5040807818","display_name":"Daniel Zehnder","orcid":null},"institutions":[{"id":"https://openalex.org/I200576644","display_name":"HRL Laboratories (United States)","ror":"https://ror.org/05p7te762","country_code":"US","type":"company","lineage":["https://openalex.org/I200576644"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"D. Zehnder","raw_affiliation_strings":["HRL Laboratories LLC, Malibu, CA, USA","HRL Labs., LLC., Malibu, CA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"HRL Laboratories LLC, Malibu, CA, USA","institution_ids":["https://openalex.org/I200576644"]},{"raw_affiliation_string":"HRL Labs., LLC., Malibu, CA, USA","institution_ids":["https://openalex.org/I200576644"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5066581377","display_name":"S. Kim","orcid":null},"institutions":[{"id":"https://openalex.org/I200576644","display_name":"HRL Laboratories (United States)","ror":"https://ror.org/05p7te762","country_code":"US","type":"company","lineage":["https://openalex.org/I200576644"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"S. Kim","raw_affiliation_strings":["HRL Laboratories LLC, Malibu, CA, USA","HRL Labs., LLC., Malibu, CA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"HRL Laboratories LLC, Malibu, CA, USA","institution_ids":["https://openalex.org/I200576644"]},{"raw_affiliation_string":"HRL Labs., LLC., Malibu, CA, USA","institution_ids":["https://openalex.org/I200576644"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5065111792","display_name":"A. Corrion","orcid":null},"institutions":[{"id":"https://openalex.org/I200576644","display_name":"HRL Laboratories (United States)","ror":"https://ror.org/05p7te762","country_code":"US","type":"company","lineage":["https://openalex.org/I200576644"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"A. Corrion","raw_affiliation_strings":["HRL Laboratories LLC, Malibu, CA, USA","HRL Labs., LLC., Malibu, CA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"HRL Laboratories LLC, Malibu, CA, USA","institution_ids":["https://openalex.org/I200576644"]},{"raw_affiliation_string":"HRL Labs., LLC., Malibu, CA, USA","institution_ids":["https://openalex.org/I200576644"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5077523049","display_name":"B. Hughes","orcid":null},"institutions":[{"id":"https://openalex.org/I200576644","display_name":"HRL Laboratories (United States)","ror":"https://ror.org/05p7te762","country_code":"US","type":"company","lineage":["https://openalex.org/I200576644"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"B. Hughes","raw_affiliation_strings":["HRL Laboratories LLC, Malibu, CA, USA","HRL Labs., LLC., Malibu, CA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"HRL Laboratories LLC, Malibu, CA, USA","institution_ids":["https://openalex.org/I200576644"]},{"raw_affiliation_string":"HRL Labs., LLC., Malibu, CA, USA","institution_ids":["https://openalex.org/I200576644"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5000966631","display_name":"K. S. Boutros","orcid":null},"institutions":[{"id":"https://openalex.org/I200576644","display_name":"HRL Laboratories (United States)","ror":"https://ror.org/05p7te762","country_code":"US","type":"company","lineage":["https://openalex.org/I200576644"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"K. Boutros","raw_affiliation_strings":["HRL Laboratories LLC, Malibu, CA, USA","HRL Labs., LLC., Malibu, CA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"HRL Laboratories LLC, Malibu, CA, USA","institution_ids":["https://openalex.org/I200576644"]},{"raw_affiliation_string":"HRL Labs., LLC., Malibu, CA, USA","institution_ids":["https://openalex.org/I200576644"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5042542977","display_name":"Chandra Namuduri","orcid":null},"institutions":[{"id":"https://openalex.org/I118136607","display_name":"General Motors (United States)","ror":"https://ror.org/05addee68","country_code":"US","type":"company","lineage":["https://openalex.org/I118136607"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"C. Namuduri","raw_affiliation_strings":["GM Global Research and Development Center, General Motors, Warren, MI, USA","GM Global R&D Center, General Motors, Warren, MI, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"GM Global Research and Development Center, General Motors, Warren, MI, USA","institution_ids":["https://openalex.org/I118136607"]},{"raw_affiliation_string":"GM Global R&D Center, General Motors, Warren, MI, USA","institution_ids":["https://openalex.org/I118136607"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":1.7816,"has_fulltext":false,"cited_by_count":2,"citation_normalized_percentile":{"value":0.86681922,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":94,"max":96},"biblio":{"volume":null,"issue":null,"first_page":"310","last_page":"313"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9994000196456909,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12529","display_name":"Ga2O3 and related materials","score":0.9991999864578247,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/high-electron-mobility-transistor","display_name":"High-electron-mobility transistor","score":0.8167234659194946},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.6535884737968445},{"id":"https://openalex.org/keywords/robustness","display_name":"Robustness (evolution)","score":0.6479600667953491},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.597698450088501},{"id":"https://openalex.org/keywords/gate-dielectric","display_name":"Gate dielectric","score":0.4869335889816284},{"id":"https://openalex.org/keywords/gallium-nitride","display_name":"Gallium nitride","score":0.4732518792152405},{"id":"https://openalex.org/keywords/dielectric","display_name":"Dielectric","score":0.43345656991004944},{"id":"https://openalex.org/keywords/etching","display_name":"Etching (microfabrication)","score":0.41943520307540894},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.3816257119178772},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.37344953417778015},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.3258502185344696},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.28318673372268677},{"id":"https://openalex.org/keywords/layer","display_name":"Layer (electronics)","score":0.28311896324157715},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.23560163378715515},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.10164451599121094},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.07129454612731934},{"id":"https://openalex.org/keywords/chemistry","display_name":"Chemistry","score":0.06882345676422119}],"concepts":[{"id":"https://openalex.org/C162057924","wikidata":"https://www.wikidata.org/wiki/Q1617706","display_name":"High-electron-mobility transistor","level":4,"score":0.8167234659194946},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6535884737968445},{"id":"https://openalex.org/C63479239","wikidata":"https://www.wikidata.org/wiki/Q7353546","display_name":"Robustness (evolution)","level":3,"score":0.6479600667953491},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.597698450088501},{"id":"https://openalex.org/C166972891","wikidata":"https://www.wikidata.org/wiki/Q5527011","display_name":"Gate dielectric","level":4,"score":0.4869335889816284},{"id":"https://openalex.org/C2778871202","wikidata":"https://www.wikidata.org/wiki/Q411713","display_name":"Gallium nitride","level":3,"score":0.4732518792152405},{"id":"https://openalex.org/C133386390","wikidata":"https://www.wikidata.org/wiki/Q184996","display_name":"Dielectric","level":2,"score":0.43345656991004944},{"id":"https://openalex.org/C100460472","wikidata":"https://www.wikidata.org/wiki/Q2368605","display_name":"Etching (microfabrication)","level":3,"score":0.41943520307540894},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.3816257119178772},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.37344953417778015},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.3258502185344696},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.28318673372268677},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.28311896324157715},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.23560163378715515},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.10164451599121094},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.07129454612731934},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.06882345676422119},{"id":"https://openalex.org/C104317684","wikidata":"https://www.wikidata.org/wiki/Q7187","display_name":"Gene","level":2,"score":0.0},{"id":"https://openalex.org/C55493867","wikidata":"https://www.wikidata.org/wiki/Q7094","display_name":"Biochemistry","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/essderc.2012.6343395","is_oa":false,"landing_page_url":"https://doi.org/10.1109/essderc.2012.6343395","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2012 Proceedings of the European Solid-State Device Research Conference (ESSDERC)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":7,"referenced_works":["https://openalex.org/W1986565837","https://openalex.org/W2011273901","https://openalex.org/W2014512119","https://openalex.org/W2050878962","https://openalex.org/W2159764454","https://openalex.org/W2169868457","https://openalex.org/W6685051411"],"related_works":["https://openalex.org/W2472160638","https://openalex.org/W3209950509","https://openalex.org/W2559825181","https://openalex.org/W1975307200","https://openalex.org/W4377089489","https://openalex.org/W3088454288","https://openalex.org/W2466508933","https://openalex.org/W4313611767","https://openalex.org/W2613044742","https://openalex.org/W4385217635"],"abstract_inverted_index":{"Two":[0],"critical":[1,69],"processes":[2],"within":[3],"the":[4,29,32,37,42,47,51,54,72],"gate":[5,48,55],"module":[6],"of":[7,31,34,36,41,53,66,74,82,90],"GaN-based":[8],"MOS-HEMT":[9],"with":[10,77],"significant":[11],"impact":[12,30],"on":[13,59],"device":[14,60],"robustness":[15],"and":[16,20,50,87],"performance":[17,61],"were":[18],"identified":[19],"are":[21,62],"presented":[22],"in":[23],"this":[24],"paper.":[25],"Specifically,":[26],"data":[27],"highlighting":[28],"number":[33],"cycles":[35],"atomic":[38],"layer":[39],"etching":[40],"AlGaN":[43],"barrier":[44],"to":[45],"recess":[46],"region":[49],"sequence":[52],"dielectric":[56],"anneal":[57],"step":[58],"discussed.":[63],"The":[64],"optimization":[65],"these":[67],"two":[68],"steps":[70],"enabled":[71],"implementation":[73],"a":[75],"50A/600V":[76],"an":[78],"off-state":[79],"leakage":[80],"current":[81],"455":[83],"\u03bcA":[84],"at":[85,92],"600V":[86],"on-state":[88],"resistance":[89],"41m\u03a9":[91],"VGS=2.5V.":[93]},"counts_by_year":[{"year":2014,"cited_by_count":2}],"updated_date":"2026-07-29T14:22:42.915294","created_date":"2025-10-10T00:00:00"}