{"id":"https://openalex.org/W1987663273","doi":"https://doi.org/10.1109/essderc.2012.6343367","title":"Z2-FET used as 1-transistor high-speed DRAM","display_name":"Z2-FET used as 1-transistor high-speed DRAM","publication_year":2012,"publication_date":"2012-09-01","ids":{"openalex":"https://openalex.org/W1987663273","doi":"https://doi.org/10.1109/essderc.2012.6343367","mag":"1987663273"},"language":"en","primary_location":{"id":"doi:10.1109/essderc.2012.6343367","is_oa":false,"landing_page_url":"https://doi.org/10.1109/essderc.2012.6343367","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2012 Proceedings of the European Solid-State Device Research Conference (ESSDERC)","raw_type":"proceedings-article"},"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5101972816","display_name":"Jing Wan","orcid":"https://orcid.org/0000-0002-6339-4006"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Jing Wan","raw_affiliation_strings":["IMEP, INPG, Grenoble, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IMEP, INPG, Grenoble, France","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5061363679","display_name":"C. Le Royer","orcid":null},"institutions":[{"id":"https://openalex.org/I2738703131","display_name":"Commissariat \u00e0 l'\u00c9nergie Atomique et aux \u00c9nergies Alternatives","ror":"https://ror.org/00jjx8s55","country_code":"FR","type":"government","lineage":["https://openalex.org/I2738703131"]},{"id":"https://openalex.org/I3020098449","display_name":"CEA Grenoble","ror":"https://ror.org/02mg6n827","country_code":"FR","type":"government","lineage":["https://openalex.org/I2738703131","https://openalex.org/I3020098449"]},{"id":"https://openalex.org/I4210150049","display_name":"Laboratoire d'\u00c9lectronique des Technologies de l'Information","ror":"https://ror.org/04mf0wv34","country_code":"FR","type":"government","lineage":["https://openalex.org/I2738703131","https://openalex.org/I2738703131","https://openalex.org/I4210117989","https://openalex.org/I4210150049"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"Cyrille Le Royer","raw_affiliation_strings":["LETI, CEA, Grenoble, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"LETI, CEA, Grenoble, France","institution_ids":["https://openalex.org/I2738703131","https://openalex.org/I3020098449","https://openalex.org/I4210150049"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5056010209","display_name":"A. Zaslavsky","orcid":"https://orcid.org/0000-0002-5240-0271"},"institutions":[{"id":"https://openalex.org/I27804330","display_name":"Brown University","ror":"https://ror.org/05gq02987","country_code":"US","type":"education","lineage":["https://openalex.org/I27804330"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Alexander Zaslavsky","raw_affiliation_strings":["IMEP, INPG, Grenoble, France","School of Engineering, Brown University, Providence, RI, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IMEP, INPG, Grenoble, France","institution_ids":[]},{"raw_affiliation_string":"School of Engineering, Brown University, Providence, RI, USA","institution_ids":["https://openalex.org/I27804330"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5002685370","display_name":"S. Cristoloveanu","orcid":"https://orcid.org/0000-0002-3576-5586"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Sorin Cristoloveanu","raw_affiliation_strings":["IMEP, INPG, Grenoble, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IMEP, INPG, Grenoble, France","institution_ids":[]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":4,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":1.6315,"has_fulltext":false,"cited_by_count":17,"citation_normalized_percentile":{"value":0.80951759,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":97},"biblio":{"volume":null,"issue":null,"first_page":"197","last_page":"200"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.9993000030517578,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/dram","display_name":"Dram","score":0.7645025849342346},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.4633643329143524},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.4154638648033142},{"id":"https://openalex.org/keywords/topology","display_name":"Topology (electrical circuits)","score":0.36768460273742676},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.29384833574295044},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.26943469047546387},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.13990753889083862},{"id":"https://openalex.org/keywords/quantum-mechanics","display_name":"Quantum mechanics","score":0.10051634907722473},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.09928140044212341}],"concepts":[{"id":"https://openalex.org/C7366592","wikidata":"https://www.wikidata.org/wiki/Q1255620","display_name":"Dram","level":2,"score":0.7645025849342346},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.4633643329143524},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.4154638648033142},{"id":"https://openalex.org/C184720557","wikidata":"https://www.wikidata.org/wiki/Q7825049","display_name":"Topology (electrical circuits)","level":2,"score":0.36768460273742676},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.29384833574295044},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.26943469047546387},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.13990753889083862},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.10051634907722473},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.09928140044212341}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/essderc.2012.6343367","is_oa":false,"landing_page_url":"https://doi.org/10.1109/essderc.2012.6343367","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2012 Proceedings of the European Solid-State Device Research Conference (ESSDERC)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[{"id":"https://openalex.org/F4320306076","display_name":"National Science Foundation","ror":"https://ror.org/021nxhr62"},{"id":"https://openalex.org/F4320309716","display_name":"Fondation Nanosciences","ror":"https://ror.org/02j553a92"}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":18,"referenced_works":["https://openalex.org/W1648516568","https://openalex.org/W1992486054","https://openalex.org/W1997245005","https://openalex.org/W2021583529","https://openalex.org/W2026617335","https://openalex.org/W2086210683","https://openalex.org/W2086474299","https://openalex.org/W2096130575","https://openalex.org/W2107442426","https://openalex.org/W2137557599","https://openalex.org/W2156696223","https://openalex.org/W2536513777","https://openalex.org/W2540974353","https://openalex.org/W2545613065","https://openalex.org/W2548551732","https://openalex.org/W2625791127","https://openalex.org/W6637093742","https://openalex.org/W6729399298"],"related_works":["https://openalex.org/W1518256384","https://openalex.org/W2122593988","https://openalex.org/W2532503690","https://openalex.org/W2104280540","https://openalex.org/W2159197409","https://openalex.org/W2547020834","https://openalex.org/W2165966557","https://openalex.org/W2139097234","https://openalex.org/W1526331226","https://openalex.org/W2117620374"],"abstract_inverted_index":{"We":[0,41,96],"have":[1],"recently":[2],"demonstrated":[3],"a":[4,20],"new":[5],"device":[6,24],"named":[7],"Z2-FET":[8,88],"(zero":[9],"subthreshold":[10],"swing":[11],"and":[12,16,31,38,50,86],"zero":[13],"impact":[14],"ionization)":[15],"proposed":[17],"it":[18],"as":[19,70,72],"1-transistor":[21],"DRAM.":[22],"The":[23],"is":[25],"built":[26],"on":[27],"an":[28],"FD-SOI":[29],"substrate":[30],"operates":[32],"by":[33],"feedback":[34],"between":[35],"carrier":[36],"flows":[37],"injection":[39],"barriers.":[40],"now":[42],"present":[43],"additional":[44],"results":[45],"obtained":[46],"from":[47],"extensive":[48],"experiments":[49],"simulations.":[51],"Experimentally,":[52],"the":[53,66,79,87],"ION/IOFFratio":[54],"exceeds":[55],"109and":[56],"supply":[57],"voltage":[58],"(VDD)":[59],"scales":[60],"down":[61,92],"to":[62,93],"1.1":[63],"V":[64],"with":[65],"DRAM":[67],"retention":[68],"time":[69,81],"high":[71],"0.15":[73],"s":[74],"at":[75],"75\u00b0C.":[76],"In":[77],"simulation,":[78],"access":[80],"reaches":[82],"below":[83],"1":[84],"ns":[85],"can":[89],"be":[90],"scaled":[91],"30":[94],"nm.":[95],"also":[97],"discuss":[98],"various":[99],"operation":[100],"modes.":[101]},"counts_by_year":[{"year":2025,"cited_by_count":1},{"year":2023,"cited_by_count":1},{"year":2022,"cited_by_count":1},{"year":2021,"cited_by_count":1},{"year":2020,"cited_by_count":1},{"year":2019,"cited_by_count":2},{"year":2018,"cited_by_count":1},{"year":2017,"cited_by_count":2},{"year":2016,"cited_by_count":3},{"year":2015,"cited_by_count":1},{"year":2013,"cited_by_count":3}],"updated_date":"2026-08-21T09:56:20.448147","created_date":"2025-10-10T00:00:00"}