{"id":"https://openalex.org/W2070292388","doi":"https://doi.org/10.1109/essderc.2012.6343355","title":"Current-voltage characteristics of vertical diodes for next generation memories","display_name":"Current-voltage characteristics of vertical diodes for next generation memories","publication_year":2012,"publication_date":"2012-09-01","ids":{"openalex":"https://openalex.org/W2070292388","doi":"https://doi.org/10.1109/essderc.2012.6343355","mag":"2070292388"},"language":"en","primary_location":{"id":"doi:10.1109/essderc.2012.6343355","is_oa":false,"landing_page_url":"https://doi.org/10.1109/essderc.2012.6343355","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2012 Proceedings of the European Solid-State Device Research Conference (ESSDERC)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5108477417","display_name":"Ho-Kyun An","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":true,"raw_author_name":"Hokyun An","raw_affiliation_strings":["Process Development Team, Semiconductor Research and Development Center, Samsung Electronics Company Limited, Hwasung, South Korea","Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd., Hwasung, Korea"],"affiliations":[{"raw_affiliation_string":"Process Development Team, Semiconductor Research and Development Center, Samsung Electronics Company Limited, Hwasung, South Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd., Hwasung, Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5062778308","display_name":"Kong-Soo Lee","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Kong-Soo Lee","raw_affiliation_strings":["Process Development Team, Semiconductor Research and Development Center, Samsung Electronics Company Limited, Hwasung, South Korea","Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd., Hwasung, Korea"],"affiliations":[{"raw_affiliation_string":"Process Development Team, Semiconductor Research and Development Center, Samsung Electronics Company Limited, Hwasung, South Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd., Hwasung, Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5061629335","display_name":"Yoon\u2010Goo Kang","orcid":"https://orcid.org/0000-0001-7310-7421"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Yoongoo Kang","raw_affiliation_strings":["Process Development Team, Semiconductor Research and Development Center, Samsung Electronics Company Limited, Hwasung, South Korea","Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd., Hwasung, Korea"],"affiliations":[{"raw_affiliation_string":"Process Development Team, Semiconductor Research and Development Center, Samsung Electronics Company Limited, Hwasung, South Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd., Hwasung, Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5003964842","display_name":"Seong Hoon Jeong","orcid":"https://orcid.org/0000-0001-5638-2851"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Seonghoon Jeong","raw_affiliation_strings":["Process Development Team, Semiconductor Research and Development Center, Samsung Electronics Company Limited, Hwasung, South Korea","Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd., Hwasung, Korea"],"affiliations":[{"raw_affiliation_string":"Process Development Team, Semiconductor Research and Development Center, Samsung Electronics Company Limited, Hwasung, South Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd., Hwasung, Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5108235418","display_name":"Wonseok Yoo","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Wonseok Yoo","raw_affiliation_strings":["Process Development Team, Semiconductor Research and Development Center, Samsung Electronics Company Limited, Hwasung, South Korea","Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd., Hwasung, Korea"],"affiliations":[{"raw_affiliation_string":"Process Development Team, Semiconductor Research and Development Center, Samsung Electronics Company Limited, Hwasung, South Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd., Hwasung, Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5013981135","display_name":"Jae-Jong Han","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Jae-Jong Han","raw_affiliation_strings":["Process Development Team, Semiconductor Research and Development Center, Samsung Electronics Company Limited, Hwasung, South Korea","Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd., Hwasung, Korea"],"affiliations":[{"raw_affiliation_string":"Process Development Team, Semiconductor Research and Development Center, Samsung Electronics Company Limited, Hwasung, South Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd., Hwasung, Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5039952149","display_name":"Bong-Hyun Kim","orcid":"https://orcid.org/0000-0002-1171-4303"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Bonghyun Kim","raw_affiliation_strings":["Process Development Team, Semiconductor Research and Development Center, Samsung Electronics Company Limited, Hwasung, South Korea","Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd., Hwasung, Korea"],"affiliations":[{"raw_affiliation_string":"Process Development Team, Semiconductor Research and Development Center, Samsung Electronics Company Limited, Hwasung, South Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd., Hwasung, Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5081465224","display_name":"Hanjin Lim","orcid":"https://orcid.org/0000-0003-4171-6622"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Hanjin Lim","raw_affiliation_strings":["Process Development Team, Semiconductor Research and Development Center, Samsung Electronics Company Limited, Hwasung, South Korea","Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd., Hwasung, Korea"],"affiliations":[{"raw_affiliation_string":"Process Development Team, Semiconductor Research and Development Center, Samsung Electronics Company Limited, Hwasung, South Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd., Hwasung, Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5112131053","display_name":"Seok-Woo Nam","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Seokwoo Nam","raw_affiliation_strings":["Process Development Team, Semiconductor Research and Development Center, Samsung Electronics Company Limited, Hwasung, South Korea","Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd., Hwasung, Korea"],"affiliations":[{"raw_affiliation_string":"Process Development Team, Semiconductor Research and Development Center, Samsung Electronics Company Limited, Hwasung, South Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd., Hwasung, Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5112400797","display_name":"Gitae Jeong","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Gi-Tae Jeong","raw_affiliation_strings":["Process Development Team, Semiconductor Research and Development Center, Samsung Electronics Company Limited, Hwasung, South Korea","Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd., Hwasung, Korea"],"affiliations":[{"raw_affiliation_string":"Process Development Team, Semiconductor Research and Development Center, Samsung Electronics Company Limited, Hwasung, South Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd., Hwasung, Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5102073935","display_name":"Ho-Kyu Kang","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Ho-Kyu Kang","raw_affiliation_strings":["Process Development Team, Semiconductor Research and Development Center, Samsung Electronics Company Limited, Hwasung, South Korea","Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd., Hwasung, Korea"],"affiliations":[{"raw_affiliation_string":"Process Development Team, Semiconductor Research and Development Center, Samsung Electronics Company Limited, Hwasung, South Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd., Hwasung, Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5059032703","display_name":"Chilhee Chung","orcid":"https://orcid.org/0000-0002-4274-7757"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Chilhee Chung","raw_affiliation_strings":["Process Development Team, Semiconductor Research and Development Center, Samsung Electronics Company Limited, Hwasung, South Korea","Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd., Hwasung, Korea"],"affiliations":[{"raw_affiliation_string":"Process Development Team, Semiconductor Research and Development Center, Samsung Electronics Company Limited, Hwasung, South Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd., Hwasung, Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5067774586","display_name":"Byoungdeog Choi","orcid":"https://orcid.org/0000-0003-0411-4323"},"institutions":[{"id":"https://openalex.org/I848706","display_name":"Sungkyunkwan University","ror":"https://ror.org/04q78tk20","country_code":"KR","type":"education","lineage":["https://openalex.org/I848706"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Byoungdeog Choi","raw_affiliation_strings":["School of Communication and Information Engineering, Sungkyunkwan Univerisity, Suwon, South Korea","School of Communication and Information Engineering, Sungkyunkwan Univerisity, Suwon, Korea"],"affiliations":[{"raw_affiliation_string":"School of Communication and Information Engineering, Sungkyunkwan Univerisity, Suwon, South Korea","institution_ids":["https://openalex.org/I848706"]},{"raw_affiliation_string":"School of Communication and Information Engineering, Sungkyunkwan Univerisity, Suwon, Korea","institution_ids":["https://openalex.org/I848706"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":13,"corresponding_author_ids":["https://openalex.org/A5108477417"],"corresponding_institution_ids":["https://openalex.org/I2250650973"],"apc_list":null,"apc_paid":null,"fwci":0.21871674,"has_fulltext":false,"cited_by_count":4,"citation_normalized_percentile":{"value":0.60380541,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":96},"biblio":{"volume":null,"issue":null,"first_page":"149","last_page":"152"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9988999962806702,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9980000257492065,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/diode","display_name":"Diode","score":0.8358282446861267},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.5435100197792053},{"id":"https://openalex.org/keywords/equivalent-series-resistance","display_name":"Equivalent series resistance","score":0.5148793458938599},{"id":"https://openalex.org/keywords/epitaxy","display_name":"Epitaxy","score":0.48490744829177856},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.45298653841018677},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.4340004622936249},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.3435320556163788},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.3403565287590027},{"id":"https://openalex.org/keywords/topology","display_name":"Topology (electrical circuits)","score":0.32000064849853516},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.18908098340034485},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.16967695951461792}],"concepts":[{"id":"https://openalex.org/C78434282","wikidata":"https://www.wikidata.org/wiki/Q11656","display_name":"Diode","level":2,"score":0.8358282446861267},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5435100197792053},{"id":"https://openalex.org/C14485415","wikidata":"https://www.wikidata.org/wiki/Q5384730","display_name":"Equivalent series resistance","level":3,"score":0.5148793458938599},{"id":"https://openalex.org/C110738630","wikidata":"https://www.wikidata.org/wiki/Q1135540","display_name":"Epitaxy","level":3,"score":0.48490744829177856},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.45298653841018677},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.4340004622936249},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.3435320556163788},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3403565287590027},{"id":"https://openalex.org/C184720557","wikidata":"https://www.wikidata.org/wiki/Q7825049","display_name":"Topology (electrical circuits)","level":2,"score":0.32000064849853516},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.18908098340034485},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.16967695951461792},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/essderc.2012.6343355","is_oa":false,"landing_page_url":"https://doi.org/10.1109/essderc.2012.6343355","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2012 Proceedings of the European Solid-State Device Research Conference (ESSDERC)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","score":0.5,"display_name":"Affordable and clean energy"}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":12,"referenced_works":["https://openalex.org/W1973318646","https://openalex.org/W2021421913","https://openalex.org/W2032091965","https://openalex.org/W2037747688","https://openalex.org/W2040104807","https://openalex.org/W2072768567","https://openalex.org/W2084540850","https://openalex.org/W2118996040","https://openalex.org/W2138259888","https://openalex.org/W2499844158","https://openalex.org/W3145475667","https://openalex.org/W6682505827"],"related_works":["https://openalex.org/W2468746321","https://openalex.org/W2040371414","https://openalex.org/W2160704499","https://openalex.org/W2113943921","https://openalex.org/W2059207462","https://openalex.org/W2048432632","https://openalex.org/W3048173489","https://openalex.org/W2068693435","https://openalex.org/W2055203610","https://openalex.org/W2789647425"],"abstract_inverted_index":{"In":[0],"this":[1],"paper,":[2],"current-voltage-temperature":[3],"(I-V-T)":[4],"characteristics":[5],"of":[6,39,42,50,58,74],"vertical":[7,34,75],"diodes":[8,76],"realized":[9],"by":[10,20],"different":[11],"selective":[12],"epitaxial":[13],"growth":[14],"techniques":[15],"have":[16,29],"been":[17],"investigated.":[18],"Diodes":[19],"the":[21,68,72],"batch-type":[22],"cyclic":[23],"SEG":[24],"process":[25],"at":[26],"low":[27],"temperature":[28],"shown":[30],"eligible":[31],"performances":[32,73],"for":[33,71,77],"switches,":[35],"including":[36],"ideality":[37],"factor":[38],"1.08,":[40],"off-current":[41],"1.0\u00d710":[43],"<sup":[44,52],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[45,53],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">-12</sup>":[46],"A":[47],"and":[48,61],"on/off-ratio":[49],"2.4\u00d710":[51],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">8</sup>":[54],".":[55],"The":[56],"optimization":[57],"crystallographic":[59],"defects":[60],"series":[62],"resistance":[63],"is":[64],"expected":[65],"to":[66],"be":[67],"most":[69],"critical":[70],"next":[78],"generation":[79],"memories.":[80]},"counts_by_year":[{"year":2017,"cited_by_count":1},{"year":2016,"cited_by_count":2},{"year":2014,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}