{"id":"https://openalex.org/W2898630683","doi":"https://doi.org/10.1109/esscirc.2018.8494262","title":"A 36V 48MHz JFET-Input Bipolar Operational Amplifier with 150\u00b5V Maximum Offset and Overload Supply Current Control","display_name":"A 36V 48MHz JFET-Input Bipolar Operational Amplifier with 150\u00b5V Maximum Offset and Overload Supply Current Control","publication_year":2018,"publication_date":"2018-09-01","ids":{"openalex":"https://openalex.org/W2898630683","doi":"https://doi.org/10.1109/esscirc.2018.8494262","mag":"2898630683"},"language":"en","primary_location":{"id":"doi:10.1109/esscirc.2018.8494262","is_oa":false,"landing_page_url":"https://doi.org/10.1109/esscirc.2018.8494262","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"ESSCIRC 2018 - IEEE 44th European Solid State Circuits Conference (ESSCIRC)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5002421848","display_name":"Martijn F. Snoeij","orcid":null},"institutions":[{"id":"https://openalex.org/I4210129496","display_name":"Texas Instruments (Germany)","ror":"https://ror.org/03cvjvq49","country_code":"DE","type":"company","lineage":["https://openalex.org/I4210129496","https://openalex.org/I74760111"]}],"countries":["DE"],"is_corresponding":true,"raw_author_name":"Martijn Snoeij","raw_affiliation_strings":["Texas Instruments Freising, Germany"],"affiliations":[{"raw_affiliation_string":"Texas Instruments Freising, Germany","institution_ids":["https://openalex.org/I4210129496"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":["https://openalex.org/A5002421848"],"corresponding_institution_ids":["https://openalex.org/I4210129496"],"apc_list":null,"apc_paid":null,"fwci":1.0467,"has_fulltext":false,"cited_by_count":13,"citation_normalized_percentile":{"value":0.7886766,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":99},"biblio":{"volume":null,"issue":null,"first_page":"290","last_page":"293"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9965000152587891,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9962999820709229,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/slew-rate","display_name":"Slew rate","score":0.9534527063369751},{"id":"https://openalex.org/keywords/operational-amplifier","display_name":"Operational amplifier","score":0.6078395843505859},{"id":"https://openalex.org/keywords/jfet","display_name":"JFET","score":0.585845947265625},{"id":"https://openalex.org/keywords/offset","display_name":"Offset (computer science)","score":0.5806957483291626},{"id":"https://openalex.org/keywords/amplifier","display_name":"Amplifier","score":0.5260308384895325},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.5227411389350891},{"id":"https://openalex.org/keywords/power-consumption","display_name":"Power consumption","score":0.45921608805656433},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.4388645887374878},{"id":"https://openalex.org/keywords/input-offset-voltage","display_name":"Input offset voltage","score":0.43601056933403015},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.42414528131484985},{"id":"https://openalex.org/keywords/comparator","display_name":"Comparator","score":0.41754305362701416},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.31210029125213623},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.2931467294692993},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.21331524848937988},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.18953880667686462},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.16668054461479187},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.08559560775756836}],"concepts":[{"id":"https://openalex.org/C82517063","wikidata":"https://www.wikidata.org/wiki/Q1591315","display_name":"Slew rate","level":3,"score":0.9534527063369751},{"id":"https://openalex.org/C145366948","wikidata":"https://www.wikidata.org/wiki/Q178947","display_name":"Operational amplifier","level":4,"score":0.6078395843505859},{"id":"https://openalex.org/C2778484494","wikidata":"https://www.wikidata.org/wiki/Q385520","display_name":"JFET","level":5,"score":0.585845947265625},{"id":"https://openalex.org/C175291020","wikidata":"https://www.wikidata.org/wiki/Q1156822","display_name":"Offset (computer science)","level":2,"score":0.5806957483291626},{"id":"https://openalex.org/C194257627","wikidata":"https://www.wikidata.org/wiki/Q211554","display_name":"Amplifier","level":3,"score":0.5260308384895325},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.5227411389350891},{"id":"https://openalex.org/C2984118289","wikidata":"https://www.wikidata.org/wiki/Q29954","display_name":"Power consumption","level":3,"score":0.45921608805656433},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.4388645887374878},{"id":"https://openalex.org/C63651839","wikidata":"https://www.wikidata.org/wiki/Q478566","display_name":"Input offset voltage","level":5,"score":0.43601056933403015},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.42414528131484985},{"id":"https://openalex.org/C155745195","wikidata":"https://www.wikidata.org/wiki/Q1164179","display_name":"Comparator","level":3,"score":0.41754305362701416},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.31210029125213623},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.2931467294692993},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.21331524848937988},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.18953880667686462},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.16668054461479187},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.08559560775756836},{"id":"https://openalex.org/C199360897","wikidata":"https://www.wikidata.org/wiki/Q9143","display_name":"Programming language","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C145598152","wikidata":"https://www.wikidata.org/wiki/Q176097","display_name":"Field-effect transistor","level":4,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/esscirc.2018.8494262","is_oa":false,"landing_page_url":"https://doi.org/10.1109/esscirc.2018.8494262","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"ESSCIRC 2018 - IEEE 44th European Solid State Circuits Conference (ESSCIRC)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.9100000262260437,"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":4,"referenced_works":["https://openalex.org/W1546726434","https://openalex.org/W2118808715","https://openalex.org/W2137462323","https://openalex.org/W4243867153"],"related_works":["https://openalex.org/W4200387119","https://openalex.org/W2107423283","https://openalex.org/W101534108","https://openalex.org/W2797920886","https://openalex.org/W1500249877","https://openalex.org/W1504378132","https://openalex.org/W1560414352","https://openalex.org/W2791607411","https://openalex.org/W2425085424","https://openalex.org/W90381762"],"abstract_inverted_index":{"This":[0],"paper":[1],"presents":[2],"a":[3,61],"36V":[4],"JFET":[5],"-input":[6],"bipolar":[7],"operational":[8],"amplifier":[9,50],"with":[10],"an":[11,70],"unprecedented":[12],"combination":[13],"of":[14],"DC":[15],"precision":[16],"(150\u03bcV":[17],"offset,":[18],"1.5":[19],"\u03bcV/\u00b0C":[20],"drift)":[21],"and":[22,54,73],"high":[23,30],"speed":[24],"(48MHz":[25],"GBW,":[26],"160V/\u03bcs":[27],"slew-rate).":[28],"The":[29],"slew-rate":[31],"is":[32],"obtained":[33],"using":[34],"the":[35,49,55,58],"well-known":[36],"slew-boosting":[37],"method.":[38],"However,":[39],"conventional":[40],"slew-boost":[41],"circuits":[42],"can":[43],"cause":[44],"excessive":[45],"power":[46,75],"consumption":[47,76],"when":[48],"inputs":[51],"are":[52],"overloaded":[53],"output":[56],"hits":[57],"rail.":[59],"Therefore,":[60],"dedicated":[62],"protection":[63],"circuit":[64],"was":[65],"added":[66],"that":[67],"detects":[68],"such":[69],"overload":[71],"condition,":[72],"limits":[74],"in":[77],"this":[78],"condition.":[79]},"counts_by_year":[{"year":2026,"cited_by_count":1},{"year":2025,"cited_by_count":1},{"year":2024,"cited_by_count":2},{"year":2023,"cited_by_count":1},{"year":2021,"cited_by_count":1},{"year":2020,"cited_by_count":2},{"year":2019,"cited_by_count":5}],"updated_date":"2026-04-05T17:49:38.594831","created_date":"2025-10-10T00:00:00"}