{"id":"https://openalex.org/W2769491465","doi":"https://doi.org/10.1109/esscirc.2017.8094587","title":"An 800 Mhz mixed-V&lt;inf&gt;T&lt;/inf&gt; 4T gain-cell embedded DRAM in 28 nm CMOS bulk process for approximate computing applications","display_name":"An 800 Mhz mixed-V&lt;inf&gt;T&lt;/inf&gt; 4T gain-cell embedded DRAM in 28 nm CMOS bulk process for approximate computing applications","publication_year":2017,"publication_date":"2017-09-01","ids":{"openalex":"https://openalex.org/W2769491465","doi":"https://doi.org/10.1109/esscirc.2017.8094587","mag":"2769491465"},"language":"en","primary_location":{"id":"doi:10.1109/esscirc.2017.8094587","is_oa":false,"landing_page_url":"https://doi.org/10.1109/esscirc.2017.8094587","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"ESSCIRC 2017 - 43rd IEEE European Solid State Circuits Conference","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5034618529","display_name":"Robert Giterman","orcid":"https://orcid.org/0000-0002-1410-4746"},"institutions":[{"id":"https://openalex.org/I13955877","display_name":"Bar-Ilan University","ror":"https://ror.org/03kgsv495","country_code":"IL","type":"education","lineage":["https://openalex.org/I13955877"]}],"countries":["IL"],"is_corresponding":true,"raw_author_name":"Robert Giterman","raw_affiliation_strings":["Faculty of Engineering, Bar-Ilan University, Ramat Gan, Israel"],"affiliations":[{"raw_affiliation_string":"Faculty of Engineering, Bar-Ilan University, Ramat Gan, Israel","institution_ids":["https://openalex.org/I13955877"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5065902823","display_name":"Alexander Fish","orcid":"https://orcid.org/0000-0002-4994-1536"},"institutions":[{"id":"https://openalex.org/I13955877","display_name":"Bar-Ilan University","ror":"https://ror.org/03kgsv495","country_code":"IL","type":"education","lineage":["https://openalex.org/I13955877"]}],"countries":["IL"],"is_corresponding":false,"raw_author_name":"Alexander Fish","raw_affiliation_strings":["Faculty of Engineering, Bar-Ilan University, Ramat Gan, Israel"],"affiliations":[{"raw_affiliation_string":"Faculty of Engineering, Bar-Ilan University, Ramat Gan, Israel","institution_ids":["https://openalex.org/I13955877"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5073894457","display_name":"Narkis Geuli","orcid":null},"institutions":[{"id":"https://openalex.org/I458620863","display_name":"Mellanox Technologies (Israel)","ror":"https://ror.org/00gym2132","country_code":"IL","type":"company","lineage":["https://openalex.org/I4210088690","https://openalex.org/I458620863"]}],"countries":["IL"],"is_corresponding":false,"raw_author_name":"Narkis Geuli","raw_affiliation_strings":["Mellanox Technologies, Yokneam, Israel"],"affiliations":[{"raw_affiliation_string":"Mellanox Technologies, Yokneam, Israel","institution_ids":["https://openalex.org/I458620863"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5077660918","display_name":"Elad Mentovich","orcid":null},"institutions":[{"id":"https://openalex.org/I458620863","display_name":"Mellanox Technologies (Israel)","ror":"https://ror.org/00gym2132","country_code":"IL","type":"company","lineage":["https://openalex.org/I4210088690","https://openalex.org/I458620863"]}],"countries":["IL"],"is_corresponding":false,"raw_author_name":"Elad Mentovich","raw_affiliation_strings":["Mellanox Technologies, Yokneam, Israel"],"affiliations":[{"raw_affiliation_string":"Mellanox Technologies, Yokneam, Israel","institution_ids":["https://openalex.org/I458620863"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5059133771","display_name":"Andreas Burg","orcid":"https://orcid.org/0000-0002-7270-5558"},"institutions":[{"id":"https://openalex.org/I5124864","display_name":"\u00c9cole Polytechnique F\u00e9d\u00e9rale de Lausanne","ror":"https://ror.org/02s376052","country_code":"CH","type":"education","lineage":["https://openalex.org/I2799323385","https://openalex.org/I5124864"]}],"countries":["CH"],"is_corresponding":false,"raw_author_name":"Andreas Burg","raw_affiliation_strings":["EPFL, Institute of Electrical Engineering, Lausanne, VD, Switzerland"],"affiliations":[{"raw_affiliation_string":"EPFL, Institute of Electrical Engineering, Lausanne, VD, Switzerland","institution_ids":["https://openalex.org/I5124864"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5026444183","display_name":"Adam Teman","orcid":"https://orcid.org/0000-0002-8233-4711"},"institutions":[{"id":"https://openalex.org/I13955877","display_name":"Bar-Ilan University","ror":"https://ror.org/03kgsv495","country_code":"IL","type":"education","lineage":["https://openalex.org/I13955877"]}],"countries":["IL"],"is_corresponding":false,"raw_author_name":"Adam Teman","raw_affiliation_strings":["Faculty of Engineering, Bar-Ilan University, Ramat Gan, Israel"],"affiliations":[{"raw_affiliation_string":"Faculty of Engineering, Bar-Ilan University, Ramat Gan, Israel","institution_ids":["https://openalex.org/I13955877"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":6,"corresponding_author_ids":["https://openalex.org/A5034618529"],"corresponding_institution_ids":["https://openalex.org/I13955877"],"apc_list":null,"apc_paid":null,"fwci":0.2867,"has_fulltext":false,"cited_by_count":4,"citation_normalized_percentile":{"value":0.6079285,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":96},"biblio":{"volume":null,"issue":null,"first_page":"308","last_page":"311"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":0.9995999932289124,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/dram","display_name":"Dram","score":0.8604718446731567},{"id":"https://openalex.org/keywords/static-random-access-memory","display_name":"Static random-access memory","score":0.7282059192657471},{"id":"https://openalex.org/keywords/porting","display_name":"Porting","score":0.6817302703857422},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.605660080909729},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.5057799816131592},{"id":"https://openalex.org/keywords/soft-error","display_name":"Soft error","score":0.47784921526908875},{"id":"https://openalex.org/keywords/embedded-system","display_name":"Embedded system","score":0.4759135842323303},{"id":"https://openalex.org/keywords/dynamic-random-access-memory","display_name":"Dynamic random-access memory","score":0.46723729372024536},{"id":"https://openalex.org/keywords/data-retention","display_name":"Data retention","score":0.43893784284591675},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.3992886245250702},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.39431917667388916},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.30500733852386475},{"id":"https://openalex.org/keywords/computer-hardware","display_name":"Computer hardware","score":0.25595125555992126},{"id":"https://openalex.org/keywords/semiconductor-memory","display_name":"Semiconductor memory","score":0.09397193789482117},{"id":"https://openalex.org/keywords/operating-system","display_name":"Operating system","score":0.08300089836120605},{"id":"https://openalex.org/keywords/software","display_name":"Software","score":0.07517719268798828}],"concepts":[{"id":"https://openalex.org/C7366592","wikidata":"https://www.wikidata.org/wiki/Q1255620","display_name":"Dram","level":2,"score":0.8604718446731567},{"id":"https://openalex.org/C68043766","wikidata":"https://www.wikidata.org/wiki/Q267416","display_name":"Static random-access memory","level":2,"score":0.7282059192657471},{"id":"https://openalex.org/C106251023","wikidata":"https://www.wikidata.org/wiki/Q851989","display_name":"Porting","level":3,"score":0.6817302703857422},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.605660080909729},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.5057799816131592},{"id":"https://openalex.org/C154474529","wikidata":"https://www.wikidata.org/wiki/Q1658917","display_name":"Soft error","level":2,"score":0.47784921526908875},{"id":"https://openalex.org/C149635348","wikidata":"https://www.wikidata.org/wiki/Q193040","display_name":"Embedded system","level":1,"score":0.4759135842323303},{"id":"https://openalex.org/C118702147","wikidata":"https://www.wikidata.org/wiki/Q189396","display_name":"Dynamic random-access memory","level":3,"score":0.46723729372024536},{"id":"https://openalex.org/C2780866740","wikidata":"https://www.wikidata.org/wiki/Q5227345","display_name":"Data retention","level":2,"score":0.43893784284591675},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3992886245250702},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.39431917667388916},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.30500733852386475},{"id":"https://openalex.org/C9390403","wikidata":"https://www.wikidata.org/wiki/Q3966","display_name":"Computer hardware","level":1,"score":0.25595125555992126},{"id":"https://openalex.org/C98986596","wikidata":"https://www.wikidata.org/wiki/Q1143031","display_name":"Semiconductor memory","level":2,"score":0.09397193789482117},{"id":"https://openalex.org/C111919701","wikidata":"https://www.wikidata.org/wiki/Q9135","display_name":"Operating system","level":1,"score":0.08300089836120605},{"id":"https://openalex.org/C2777904410","wikidata":"https://www.wikidata.org/wiki/Q7397","display_name":"Software","level":2,"score":0.07517719268798828}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/esscirc.2017.8094587","is_oa":false,"landing_page_url":"https://doi.org/10.1109/esscirc.2017.8094587","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"ESSCIRC 2017 - 43rd IEEE European Solid State Circuits Conference","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy","score":0.7900000214576721}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":8,"referenced_works":["https://openalex.org/W1871722508","https://openalex.org/W1971936677","https://openalex.org/W1975907171","https://openalex.org/W2002293402","https://openalex.org/W2048719801","https://openalex.org/W2053709612","https://openalex.org/W2091764549","https://openalex.org/W2319489345"],"related_works":["https://openalex.org/W2074922484","https://openalex.org/W2000563648","https://openalex.org/W2130607063","https://openalex.org/W2063061014","https://openalex.org/W2149227206","https://openalex.org/W2138596439","https://openalex.org/W2001316072","https://openalex.org/W2473808647","https://openalex.org/W3004383742","https://openalex.org/W2105633922"],"abstract_inverted_index":{"Gain-cell":[0],"embedded":[1],"DRAM":[2],"(GC-eDRAM)":[3],"is":[4,37,129],"an":[5,101],"attractive":[6],"alternative":[7],"to":[8,12,25,53,72,89],"traditional":[9,145],"SRAM,":[10],"due":[11],"its":[13,21],"high-density,":[14],"low-leakage,":[15],"and":[16,47,115,146,156],"inherent":[17,66],"2-ported":[18],"operation,":[19],"yet,":[20],"dynamic":[22],"nature":[23],"leads":[24],"limited":[26],"retention":[27],"time":[28],"that":[29],"requires":[30],"periodic,":[31],"power-hungry":[32],"refresh":[33,85],"cycles.":[34],"This":[35],"drawback":[36],"further":[38],"aggravated":[39],"in":[40,87,94,103,119,143,184],"scaled":[41],"technologies,":[42],"where":[43],"increased":[44],"leakage":[45],"currents":[46],"decreased":[48],"in-cell":[49],"storage":[50],"capacitances":[51],"lead":[52],"accelerated":[54],"data":[55,74],"integrity":[56],"deterioration.":[57],"However,":[58],"the":[59,65,84,98,112,185],"emerging":[60],"approximate":[61,148],"computing":[62,149],"paradigm":[63],"utilizes":[64],"error":[67,77],"resilience":[68],"of":[69,100],"some":[70],"applications":[71],"tolerate":[73],"errors.":[75],"Such":[76],"tolerance":[78],"can":[79,140],"be":[80,141],"exploited":[81],"by":[82],"reducing":[83],"rate":[86],"GC-eDRAM":[88,118],"achieve":[90],"a":[91,120,132,152,169,180],"substantial":[92],"decrease":[93],"power":[95],"consumption,":[96],"at":[97,165],"cost":[99],"increase":[102],"cell":[104],"failure":[105],"probability.":[106],"In":[107],"this":[108],"paper,":[109],"we":[110],"present":[111],"first":[113],"fabricated":[114],"fully":[116],"functional":[117],"28":[121],"nm":[122],"bulk":[123],"CMOS":[124],"technology.":[125,187],"The":[126],"array,":[127],"which":[128],"based":[130],"on":[131],"novel":[133],"mixed-V":[134],"<sub":[135],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[136],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">t</sub>":[137],"4T":[138],"bitcell,":[139],"used":[142],"both":[144],"for":[147],"applications,":[150],"featuring":[151],"small":[153],"silicon":[154],"footprint":[155],"supporting":[157],"high-performance":[158],"operation.":[159],"Silicon":[160],"measurements":[161],"demonstrate":[162],"successful":[163],"operation":[164],"800":[166],"Mhz":[167],"under":[168],"900":[170],"mV":[171],"supply,":[172],"while":[173],"retaining":[174],"almost":[175],"30%":[176],"lower":[177],"area":[178],"than":[179],"single-ported":[181],"6T":[182],"SRAM":[183],"same":[186]},"counts_by_year":[{"year":2025,"cited_by_count":1},{"year":2021,"cited_by_count":1},{"year":2018,"cited_by_count":2}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}