{"id":"https://openalex.org/W2537315410","doi":"https://doi.org/10.1109/esscirc.2016.7598239","title":"A 55nm Ultra Low Leakage Deeply Depleted Channel technology optimized for energy minimization in subthreshold SRAM and logic","display_name":"A 55nm Ultra Low Leakage Deeply Depleted Channel technology optimized for energy minimization in subthreshold SRAM and logic","publication_year":2016,"publication_date":"2016-09-01","ids":{"openalex":"https://openalex.org/W2537315410","doi":"https://doi.org/10.1109/esscirc.2016.7598239","mag":"2537315410"},"language":"en","primary_location":{"id":"doi:10.1109/esscirc.2016.7598239","is_oa":false,"landing_page_url":"https://doi.org/10.1109/esscirc.2016.7598239","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"ESSCIRC Conference 2016: 42nd European Solid-State Circuits Conference","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5002610014","display_name":"Harsh N. Patel","orcid":"https://orcid.org/0000-0003-2836-479X"},"institutions":[{"id":"https://openalex.org/I51556381","display_name":"University of Virginia","ror":"https://ror.org/0153tk833","country_code":"US","type":"education","lineage":["https://openalex.org/I51556381"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Harsh N. Patel","raw_affiliation_strings":["Department of Electrical and Computer Engineering, University of Virginia, Charlottesville, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical and Computer Engineering, University of Virginia, Charlottesville, USA","institution_ids":["https://openalex.org/I51556381"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5049574520","display_name":"Abhishek Roy","orcid":"https://orcid.org/0000-0002-9598-4668"},"institutions":[{"id":"https://openalex.org/I51556381","display_name":"University of Virginia","ror":"https://ror.org/0153tk833","country_code":"US","type":"education","lineage":["https://openalex.org/I51556381"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Abhishek Roy","raw_affiliation_strings":["Department of Electrical and Computer Engineering, University of Virginia, Charlottesville, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical and Computer Engineering, University of Virginia, Charlottesville, USA","institution_ids":["https://openalex.org/I51556381"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5085730440","display_name":"Farah B. Yahya","orcid":"https://orcid.org/0000-0001-6546-7232"},"institutions":[{"id":"https://openalex.org/I51556381","display_name":"University of Virginia","ror":"https://ror.org/0153tk833","country_code":"US","type":"education","lineage":["https://openalex.org/I51556381"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Farah B. Yahya","raw_affiliation_strings":["Department of Electrical and Computer Engineering, University of Virginia, Charlottesville, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical and Computer Engineering, University of Virginia, Charlottesville, USA","institution_ids":["https://openalex.org/I51556381"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5045035144","display_name":"Ningxi Liu","orcid":"https://orcid.org/0000-0003-0578-0571"},"institutions":[{"id":"https://openalex.org/I51556381","display_name":"University of Virginia","ror":"https://ror.org/0153tk833","country_code":"US","type":"education","lineage":["https://openalex.org/I51556381"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Ningxi Liu","raw_affiliation_strings":["Department of Electrical and Computer Engineering, University of Virginia, Charlottesville, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical and Computer Engineering, University of Virginia, Charlottesville, USA","institution_ids":["https://openalex.org/I51556381"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5080557997","display_name":"Benton H. Calhoun","orcid":"https://orcid.org/0000-0002-3770-5050"},"institutions":[{"id":"https://openalex.org/I51556381","display_name":"University of Virginia","ror":"https://ror.org/0153tk833","country_code":"US","type":"education","lineage":["https://openalex.org/I51556381"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Benton Calhoun","raw_affiliation_strings":["Department of Electrical and Computer Engineering, University of Virginia, Charlottesville, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical and Computer Engineering, University of Virginia, Charlottesville, USA","institution_ids":["https://openalex.org/I51556381"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5043936728","display_name":"Kazuyuki Kumeno","orcid":null},"institutions":[{"id":"https://openalex.org/I2252096349","display_name":"Fujitsu (Japan)","ror":"https://ror.org/038e2g226","country_code":"JP","type":"company","lineage":["https://openalex.org/I2252096349"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Kazuyuki Kumeno","raw_affiliation_strings":["Mie Fujitsu Semiconductor Ltd., 2000 Mizono Kuwana, Japan","Mie Fujitsu Semiconductor Ltd., Kuwana, Mie, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Mie Fujitsu Semiconductor Ltd., 2000 Mizono Kuwana, Japan","institution_ids":["https://openalex.org/I2252096349"]},{"raw_affiliation_string":"Mie Fujitsu Semiconductor Ltd., Kuwana, Mie, Japan","institution_ids":["https://openalex.org/I2252096349"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5062497507","display_name":"Makoto Yasuda","orcid":"https://orcid.org/0000-0001-6890-651X"},"institutions":[{"id":"https://openalex.org/I2252096349","display_name":"Fujitsu (Japan)","ror":"https://ror.org/038e2g226","country_code":"JP","type":"company","lineage":["https://openalex.org/I2252096349"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Makoto Yasuda","raw_affiliation_strings":["Mie Fujitsu Semiconductor Ltd., 2000 Mizono Kuwana, Japan","Mie Fujitsu Semiconductor Ltd., Kuwana, Mie, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Mie Fujitsu Semiconductor Ltd., 2000 Mizono Kuwana, Japan","institution_ids":["https://openalex.org/I2252096349"]},{"raw_affiliation_string":"Mie Fujitsu Semiconductor Ltd., Kuwana, Mie, Japan","institution_ids":["https://openalex.org/I2252096349"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5113592610","display_name":"Akihiko Harada","orcid":null},"institutions":[{"id":"https://openalex.org/I2252096349","display_name":"Fujitsu (Japan)","ror":"https://ror.org/038e2g226","country_code":"JP","type":"company","lineage":["https://openalex.org/I2252096349"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Akihiko Harada","raw_affiliation_strings":["Mie Fujitsu Semiconductor Ltd., 2000 Mizono Kuwana, Japan","Mie Fujitsu Semiconductor Ltd., Kuwana, Mie, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Mie Fujitsu Semiconductor Ltd., 2000 Mizono Kuwana, Japan","institution_ids":["https://openalex.org/I2252096349"]},{"raw_affiliation_string":"Mie Fujitsu Semiconductor Ltd., Kuwana, Mie, Japan","institution_ids":["https://openalex.org/I2252096349"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5014709414","display_name":"T. Ema","orcid":null},"institutions":[{"id":"https://openalex.org/I2252096349","display_name":"Fujitsu (Japan)","ror":"https://ror.org/038e2g226","country_code":"JP","type":"company","lineage":["https://openalex.org/I2252096349"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Taiji Ema","raw_affiliation_strings":["Mie Fujitsu Semiconductor Ltd., 2000 Mizono Kuwana, Japan","Mie Fujitsu Semiconductor Ltd., Kuwana, Mie, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Mie Fujitsu Semiconductor Ltd., 2000 Mizono Kuwana, Japan","institution_ids":["https://openalex.org/I2252096349"]},{"raw_affiliation_string":"Mie Fujitsu Semiconductor Ltd., Kuwana, Mie, Japan","institution_ids":["https://openalex.org/I2252096349"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":9,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":1.4882,"has_fulltext":false,"cited_by_count":9,"citation_normalized_percentile":{"value":0.845415,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":98},"biblio":{"volume":null,"issue":null,"first_page":"45","last_page":"48"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9995999932289124,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9991999864578247,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/subthreshold-conduction","display_name":"Subthreshold conduction","score":0.8366326689720154},{"id":"https://openalex.org/keywords/leakage","display_name":"Leakage (economics)","score":0.6877883076667786},{"id":"https://openalex.org/keywords/static-random-access-memory","display_name":"Static random-access memory","score":0.6282173991203308},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.5909055471420288},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.47470441460609436},{"id":"https://openalex.org/keywords/logic-gate","display_name":"Logic gate","score":0.4610348045825958},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.4316590428352356},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.42259281873703003},{"id":"https://openalex.org/keywords/process-variation","display_name":"Process variation","score":0.4159426689147949},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.28322094678878784},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.24918365478515625}],"concepts":[{"id":"https://openalex.org/C156465305","wikidata":"https://www.wikidata.org/wiki/Q1658601","display_name":"Subthreshold conduction","level":4,"score":0.8366326689720154},{"id":"https://openalex.org/C2777042071","wikidata":"https://www.wikidata.org/wiki/Q6509304","display_name":"Leakage (economics)","level":2,"score":0.6877883076667786},{"id":"https://openalex.org/C68043766","wikidata":"https://www.wikidata.org/wiki/Q267416","display_name":"Static random-access memory","level":2,"score":0.6282173991203308},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.5909055471420288},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.47470441460609436},{"id":"https://openalex.org/C131017901","wikidata":"https://www.wikidata.org/wiki/Q170451","display_name":"Logic gate","level":2,"score":0.4610348045825958},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.4316590428352356},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.42259281873703003},{"id":"https://openalex.org/C93389723","wikidata":"https://www.wikidata.org/wiki/Q7247313","display_name":"Process variation","level":3,"score":0.4159426689147949},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.28322094678878784},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.24918365478515625},{"id":"https://openalex.org/C162324750","wikidata":"https://www.wikidata.org/wiki/Q8134","display_name":"Economics","level":0,"score":0.0},{"id":"https://openalex.org/C139719470","wikidata":"https://www.wikidata.org/wiki/Q39680","display_name":"Macroeconomics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/esscirc.2016.7598239","is_oa":false,"landing_page_url":"https://doi.org/10.1109/esscirc.2016.7598239","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"ESSCIRC Conference 2016: 42nd European Solid-State Circuits Conference","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy","score":0.8999999761581421}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":25,"referenced_works":["https://openalex.org/W1486502839","https://openalex.org/W1927081464","https://openalex.org/W2004227547","https://openalex.org/W2014010346","https://openalex.org/W2048420745","https://openalex.org/W2070767174","https://openalex.org/W2075778001","https://openalex.org/W2095913060","https://openalex.org/W2096046678","https://openalex.org/W2100564342","https://openalex.org/W2119733520","https://openalex.org/W2123949733","https://openalex.org/W2126967076","https://openalex.org/W2128813651","https://openalex.org/W2137432370","https://openalex.org/W2294210308","https://openalex.org/W2394816330","https://openalex.org/W2409166890","https://openalex.org/W3149594052","https://openalex.org/W6629173531","https://openalex.org/W6668352995","https://openalex.org/W6669498094","https://openalex.org/W6711780303","https://openalex.org/W7011637028","https://openalex.org/W7073655612"],"related_works":["https://openalex.org/W2117824263","https://openalex.org/W2134421493","https://openalex.org/W2119312496","https://openalex.org/W2924345281","https://openalex.org/W4247460323","https://openalex.org/W2537086382","https://openalex.org/W2122696791","https://openalex.org/W2107909712","https://openalex.org/W2159448561","https://openalex.org/W3023368799"],"abstract_inverted_index":{"This":[0],"paper":[1],"presents":[2],"an":[3,68],"Ultra-Low":[4],"Leakage":[5],"(ULL)":[6],"55nm":[7],"Deeply":[8],"Depleted":[9],"Channel":[10],"(DDC)":[11],"process":[12],"technology":[13,54,79],"for":[14],"low":[15],"power":[16,100],"Internet":[17],"of":[18,101],"Things":[19],"(IoT)":[20],"applications.":[21],"The":[22,87,109],"DDC":[23],"ULL":[24],"devices":[25],"provide":[26],"67%":[27],"reduction":[28],"in":[29],"threshold":[30],"(VT)":[31],"variation":[32],"due":[33],"to":[34,55,75,84,94,106],"Random":[35],"Dopant":[36],"Fluctuation":[37],"(RDF).":[38],"Circuit":[39],"techniques":[40,83],"such":[41],"as":[42],"subthreshold":[43],"operation":[44],"and":[45,71],"reverse":[46],"body":[47],"biasing":[48],"(RBB)":[49],"are":[50],"co-designed":[51],"with":[52,81,96],"the":[53,57,78],"maximize":[56],"energy/power":[58],"saving.":[59],"A":[60],"test":[61],"chip":[62],"implements":[63],"a":[64,72,97],"1Kb":[65],"6T":[66,88],"SRAM,":[67],"FIR":[69,110],"filter,":[70],"51-stage":[73],"RO":[74],"showcase":[76],"how":[77],"works":[80],"circuit":[82],"minimize":[85],"energy.":[86],"SRAM":[89],"array":[90],"operates":[91],"reliably":[92],"down":[93],"200mV":[95],"reduced":[98],"leakage":[99],"7nW":[102],"(85%":[103],"lower":[104],"compared":[105],"non-DDC":[107],"devices).":[108],"filter":[111],"consumes":[112],"just":[113],"4.5pJ/cycle":[114],"operating":[115],"at":[116,118],"0.36V":[117],"200":[119],"KHz.":[120]},"counts_by_year":[{"year":2022,"cited_by_count":1},{"year":2019,"cited_by_count":2},{"year":2018,"cited_by_count":2},{"year":2017,"cited_by_count":4}],"updated_date":"2026-06-11T09:08:48.828518","created_date":"2025-10-10T00:00:00"}