{"id":"https://openalex.org/W2295369751","doi":"https://doi.org/10.1109/esscirc.2015.7313841","title":"An on-die digital aging monitor against HCI and xBTI in 16 nm Fin-FET bulk CMOS technology","display_name":"An on-die digital aging monitor against HCI and xBTI in 16 nm Fin-FET bulk CMOS technology","publication_year":2015,"publication_date":"2015-09-01","ids":{"openalex":"https://openalex.org/W2295369751","doi":"https://doi.org/10.1109/esscirc.2015.7313841","mag":"2295369751"},"language":"en","primary_location":{"id":"doi:10.1109/esscirc.2015.7313841","is_oa":false,"landing_page_url":"https://doi.org/10.1109/esscirc.2015.7313841","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"ESSCIRC Conference 2015 - 41st European Solid-State Circuits Conference (ESSCIRC)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5004949394","display_name":"Mitsuhiko Igarashi","orcid":"https://orcid.org/0000-0002-9350-0658"},"institutions":[{"id":"https://openalex.org/I4210153176","display_name":"Renesas Electronics (Japan)","ror":"https://ror.org/058wb7691","country_code":"JP","type":"company","lineage":["https://openalex.org/I4210153176"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Mitsuhiko Igarashi","raw_affiliation_strings":["Renesas Electronics Corporation, Tokyo, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Renesas Electronics Corporation, Tokyo, Japan","institution_ids":["https://openalex.org/I4210153176"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101588279","display_name":"Kan Takeuchi","orcid":"https://orcid.org/0000-0003-0739-3081"},"institutions":[{"id":"https://openalex.org/I4210153176","display_name":"Renesas Electronics (Japan)","ror":"https://ror.org/058wb7691","country_code":"JP","type":"company","lineage":["https://openalex.org/I4210153176"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Kan Takeuchi","raw_affiliation_strings":["Renesas Electronics Corporation, Tokyo, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Renesas Electronics Corporation, Tokyo, Japan","institution_ids":["https://openalex.org/I4210153176"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5016787488","display_name":"T. Okagaki","orcid":null},"institutions":[{"id":"https://openalex.org/I4210153176","display_name":"Renesas Electronics (Japan)","ror":"https://ror.org/058wb7691","country_code":"JP","type":"company","lineage":["https://openalex.org/I4210153176"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Takeshi Okagaki","raw_affiliation_strings":["Renesas Electronics Corporation, Tokyo, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Renesas Electronics Corporation, Tokyo, Japan","institution_ids":["https://openalex.org/I4210153176"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5043955916","display_name":"Koji Shibutani","orcid":null},"institutions":[{"id":"https://openalex.org/I4210153176","display_name":"Renesas Electronics (Japan)","ror":"https://ror.org/058wb7691","country_code":"JP","type":"company","lineage":["https://openalex.org/I4210153176"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Koji Shibutani","raw_affiliation_strings":["Renesas Electronics Corporation, Tokyo, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Renesas Electronics Corporation, Tokyo, Japan","institution_ids":["https://openalex.org/I4210153176"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5102089550","display_name":"Hiroaki Matsushita","orcid":null},"institutions":[{"id":"https://openalex.org/I4210153176","display_name":"Renesas Electronics (Japan)","ror":"https://ror.org/058wb7691","country_code":"JP","type":"company","lineage":["https://openalex.org/I4210153176"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Hiroaki Matsushita","raw_affiliation_strings":["Renesas Electronics Corporation, Tokyo, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Renesas Electronics Corporation, Tokyo, Japan","institution_ids":["https://openalex.org/I4210153176"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5047952713","display_name":"Koji Nii","orcid":"https://orcid.org/0000-0002-9986-5308"},"institutions":[{"id":"https://openalex.org/I4210153176","display_name":"Renesas Electronics (Japan)","ror":"https://ror.org/058wb7691","country_code":"JP","type":"company","lineage":["https://openalex.org/I4210153176"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Koji Nii","raw_affiliation_strings":["Renesas Electronics Corporation, Tokyo, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Renesas Electronics Corporation, Tokyo, Japan","institution_ids":["https://openalex.org/I4210153176"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":6,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":1.4058,"has_fulltext":false,"cited_by_count":13,"citation_normalized_percentile":{"value":0.84382114,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":98},"biblio":{"volume":null,"issue":null,"first_page":"112","last_page":"115"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10623","display_name":"Thin-Film Transistor Technologies","score":0.9991000294685364,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/ring-oscillator","display_name":"Ring oscillator","score":0.7183285355567932},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.6971840858459473},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.6368272304534912},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.5771921277046204},{"id":"https://openalex.org/keywords/degradation","display_name":"Degradation (telecommunications)","score":0.5083059668540955},{"id":"https://openalex.org/keywords/die","display_name":"Die (integrated circuit)","score":0.4956296682357788},{"id":"https://openalex.org/keywords/sensitivity","display_name":"Sensitivity (control systems)","score":0.47168853878974915},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.4702930450439453},{"id":"https://openalex.org/keywords/chip","display_name":"Chip","score":0.4280811548233032},{"id":"https://openalex.org/keywords/stress","display_name":"Stress (linguistics)","score":0.4220188558101654},{"id":"https://openalex.org/keywords/fin","display_name":"Fin","score":0.4131913185119629},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.3067764639854431},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.19008705019950867},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.15864554047584534}],"concepts":[{"id":"https://openalex.org/C104111718","wikidata":"https://www.wikidata.org/wiki/Q2153973","display_name":"Ring oscillator","level":3,"score":0.7183285355567932},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.6971840858459473},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6368272304534912},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5771921277046204},{"id":"https://openalex.org/C2779679103","wikidata":"https://www.wikidata.org/wiki/Q5251805","display_name":"Degradation (telecommunications)","level":2,"score":0.5083059668540955},{"id":"https://openalex.org/C111106434","wikidata":"https://www.wikidata.org/wiki/Q1072430","display_name":"Die (integrated circuit)","level":2,"score":0.4956296682357788},{"id":"https://openalex.org/C21200559","wikidata":"https://www.wikidata.org/wiki/Q7451068","display_name":"Sensitivity (control systems)","level":2,"score":0.47168853878974915},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.4702930450439453},{"id":"https://openalex.org/C165005293","wikidata":"https://www.wikidata.org/wiki/Q1074500","display_name":"Chip","level":2,"score":0.4280811548233032},{"id":"https://openalex.org/C21036866","wikidata":"https://www.wikidata.org/wiki/Q181767","display_name":"Stress (linguistics)","level":2,"score":0.4220188558101654},{"id":"https://openalex.org/C91721477","wikidata":"https://www.wikidata.org/wiki/Q778612","display_name":"Fin","level":2,"score":0.4131913185119629},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.3067764639854431},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.19008705019950867},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.15864554047584534},{"id":"https://openalex.org/C138885662","wikidata":"https://www.wikidata.org/wiki/Q5891","display_name":"Philosophy","level":0,"score":0.0},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.0},{"id":"https://openalex.org/C41895202","wikidata":"https://www.wikidata.org/wiki/Q8162","display_name":"Linguistics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/esscirc.2015.7313841","is_oa":false,"landing_page_url":"https://doi.org/10.1109/esscirc.2015.7313841","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"ESSCIRC Conference 2015 - 41st European Solid-State Circuits Conference (ESSCIRC)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":8,"referenced_works":["https://openalex.org/W1600918891","https://openalex.org/W2032116786","https://openalex.org/W2037668019","https://openalex.org/W2043440527","https://openalex.org/W2062728540","https://openalex.org/W2135187974","https://openalex.org/W6635674591","https://openalex.org/W6658522862"],"related_works":["https://openalex.org/W2042913821","https://openalex.org/W2372289614","https://openalex.org/W2629813803","https://openalex.org/W2041067810","https://openalex.org/W2121982427","https://openalex.org/W2909296819","https://openalex.org/W2023668401","https://openalex.org/W2096016192","https://openalex.org/W2003183089","https://openalex.org/W2112520364"],"abstract_inverted_index":{"We":[0,104],"propose":[1],"an":[2,27],"on-die":[3],"aging":[4,137,140],"monitor":[5,19,141],"based":[6],"on":[7,42],"ring-oscillator":[8],"(RO)":[9],"which":[10,119],"measures":[11],"bias-temperature-instabilities":[12],"(BTI)":[13],"and":[14,26,35,50,88,151],"AC":[15,80],"hot-carrier-infection":[16],"(HCI).":[17],"The":[18,31,128,139],"consists":[20],"of":[21,33,123,135],"a":[22,97],"symmetric":[23],"RO":[24,29],"(SRO)":[25],"asymmetric":[28],"(ASRO).":[30],"effect":[32],"NBTI":[34,124],"PBTI":[36,111],"can":[37],"be":[38],"separated":[39],"by":[40,62],"focusing":[41],"the":[43,58,143],"difference":[44],"in":[45,48,72,96,125,148,155],"sensitivity":[46,76],"observed":[47],"SRO":[49,87],"ASRO":[51,73,89],"under":[52,79],"DC":[53],"stress":[54],"condition.":[55],"In":[56],"addition,":[57],"speed":[59],"degradation":[60,115],"caused":[61],"AC-HCI":[63,78,130],"is":[64,94,116,120],"monitored":[65],"because":[66],"unbalanced":[67],"delay":[68],"with":[69],"long/short":[70],"transition":[71],"has":[74],"high":[75,156],"against":[77],"stress.":[81],"A":[82],"test":[83],"chip":[84],"including":[85],"both":[86],"using":[90],"2NAND":[91],"standard":[92],"cells":[93],"implemented":[95],"16":[98],"nm":[99],"Fin-FET":[100,126],"bulk":[101],"CMOS":[102],"technology.":[103,127],"observe":[105],"that":[106],"Vth":[107],"shift":[108],"due":[109],"to":[110],"measured":[112,129],"from":[113],"frequency":[114],"2":[117],"mV,":[118],"still":[121],"1/10":[122],"shows":[131],"almost":[132],"half":[133],"percentage":[134],"all":[136],"factors.":[138],"optimizes":[142],"design":[144,149],"guard":[145],"band":[146],"(GB)":[147],"phase":[150],"enables":[152],"dependable":[153],"system":[154],"performance":[157],"application":[158],"LSIs.":[159]},"counts_by_year":[{"year":2026,"cited_by_count":1},{"year":2024,"cited_by_count":2},{"year":2020,"cited_by_count":1},{"year":2019,"cited_by_count":2},{"year":2018,"cited_by_count":2},{"year":2017,"cited_by_count":4},{"year":2016,"cited_by_count":1}],"updated_date":"2026-06-11T09:08:48.828518","created_date":"2025-10-10T00:00:00"}