{"id":"https://openalex.org/W1980927836","doi":"https://doi.org/10.1109/esscirc.2014.6942123","title":"A 29.5 dBm class-E outphasing RF power amplifier with performance enhancement circuits in 45nm CMOS","display_name":"A 29.5 dBm class-E outphasing RF power amplifier with performance enhancement circuits in 45nm CMOS","publication_year":2014,"publication_date":"2014-09-01","ids":{"openalex":"https://openalex.org/W1980927836","doi":"https://doi.org/10.1109/esscirc.2014.6942123","mag":"1980927836"},"language":"en","primary_location":{"id":"doi:10.1109/esscirc.2014.6942123","is_oa":false,"landing_page_url":"https://doi.org/10.1109/esscirc.2014.6942123","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"ESSCIRC 2014 - 40th European Solid State Circuits Conference (ESSCIRC)","raw_type":"proceedings-article"},"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5014516145","display_name":"A. Banerjee","orcid":"https://orcid.org/0000-0001-7671-9669"},"institutions":[{"id":"https://openalex.org/I4210093996","display_name":"Dolby (United States)","ror":"https://ror.org/01eyenr26","country_code":"US","type":"company","lineage":["https://openalex.org/I4210093996"]},{"id":"https://openalex.org/I74760111","display_name":"Texas Instruments (United States)","ror":"https://ror.org/03vsmv677","country_code":"US","type":"company","lineage":["https://openalex.org/I74760111"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Aritra Banerjee","raw_affiliation_strings":["Kilby Labs, Dallas, Texas, USA","Kilby Labs, Texas Instruments, Dallas, 75243, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Kilby Labs, Dallas, Texas, USA","institution_ids":["https://openalex.org/I4210093996"]},{"raw_affiliation_string":"Kilby Labs, Texas Instruments, Dallas, 75243, USA","institution_ids":["https://openalex.org/I74760111"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5080708197","display_name":"Rahmi Hezar","orcid":null},"institutions":[{"id":"https://openalex.org/I4210093996","display_name":"Dolby (United States)","ror":"https://ror.org/01eyenr26","country_code":"US","type":"company","lineage":["https://openalex.org/I4210093996"]},{"id":"https://openalex.org/I74760111","display_name":"Texas Instruments (United States)","ror":"https://ror.org/03vsmv677","country_code":"US","type":"company","lineage":["https://openalex.org/I74760111"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Rahmi Hezar","raw_affiliation_strings":["Kilby Labs, Dallas, Texas, USA","Kilby Labs, Texas Instruments, Dallas, 75243, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Kilby Labs, Dallas, Texas, USA","institution_ids":["https://openalex.org/I4210093996"]},{"raw_affiliation_string":"Kilby Labs, Texas Instruments, Dallas, 75243, USA","institution_ids":["https://openalex.org/I74760111"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5066536325","display_name":"Lei Ding","orcid":"https://orcid.org/0000-0002-4063-1806"},"institutions":[{"id":"https://openalex.org/I4210093996","display_name":"Dolby (United States)","ror":"https://ror.org/01eyenr26","country_code":"US","type":"company","lineage":["https://openalex.org/I4210093996"]},{"id":"https://openalex.org/I74760111","display_name":"Texas Instruments (United States)","ror":"https://ror.org/03vsmv677","country_code":"US","type":"company","lineage":["https://openalex.org/I74760111"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Lei Ding","raw_affiliation_strings":["Kilby Labs, Dallas, Texas, USA","Kilby Labs, Texas Instruments, Dallas, 75243, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Kilby Labs, Dallas, Texas, USA","institution_ids":["https://openalex.org/I4210093996"]},{"raw_affiliation_string":"Kilby Labs, Texas Instruments, Dallas, 75243, USA","institution_ids":["https://openalex.org/I74760111"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5033257842","display_name":"Nathan Schemm","orcid":null},"institutions":[{"id":"https://openalex.org/I4210093996","display_name":"Dolby (United States)","ror":"https://ror.org/01eyenr26","country_code":"US","type":"company","lineage":["https://openalex.org/I4210093996"]},{"id":"https://openalex.org/I74760111","display_name":"Texas Instruments (United States)","ror":"https://ror.org/03vsmv677","country_code":"US","type":"company","lineage":["https://openalex.org/I74760111"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Nathan Schemm","raw_affiliation_strings":["Kilby Labs, Dallas, Texas, USA","Kilby Labs, Texas Instruments, Dallas, 75243, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Kilby Labs, Dallas, Texas, USA","institution_ids":["https://openalex.org/I4210093996"]},{"raw_affiliation_string":"Kilby Labs, Texas Instruments, Dallas, 75243, USA","institution_ids":["https://openalex.org/I74760111"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5112241036","display_name":"Baher Haroun","orcid":null},"institutions":[{"id":"https://openalex.org/I4210093996","display_name":"Dolby (United States)","ror":"https://ror.org/01eyenr26","country_code":"US","type":"company","lineage":["https://openalex.org/I4210093996"]},{"id":"https://openalex.org/I74760111","display_name":"Texas Instruments (United States)","ror":"https://ror.org/03vsmv677","country_code":"US","type":"company","lineage":["https://openalex.org/I74760111"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Baher Haroun","raw_affiliation_strings":["Kilby Labs, Dallas, Texas, USA","Kilby Labs, Texas Instruments, Dallas, 75243, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Kilby Labs, Dallas, Texas, USA","institution_ids":["https://openalex.org/I4210093996"]},{"raw_affiliation_string":"Kilby Labs, Texas Instruments, Dallas, 75243, USA","institution_ids":["https://openalex.org/I74760111"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":null,"has_fulltext":false,"cited_by_count":8,"citation_normalized_percentile":null,"cited_by_percentile_year":null,"biblio":{"volume":"50","issue":null,"first_page":"467","last_page":"470"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11248","display_name":"Advanced Power Amplifier Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11248","display_name":"Advanced Power Amplifier Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":0.9983999729156494,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12791","display_name":"Full-Duplex Wireless Communications","score":0.996399998664856,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/amplifier","display_name":"Amplifier","score":0.8178411722183228},{"id":"https://openalex.org/keywords/power-added-efficiency","display_name":"Power-added efficiency","score":0.6947008371353149},{"id":"https://openalex.org/keywords/dbm","display_name":"dBm","score":0.6382508873939514},{"id":"https://openalex.org/keywords/dbc","display_name":"dBc","score":0.6216589212417603},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.6106861233711243},{"id":"https://openalex.org/keywords/rf-power-amplifier","display_name":"RF power amplifier","score":0.6053977012634277},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.5652645230293274},{"id":"https://openalex.org/keywords/electrical-efficiency","display_name":"Electrical efficiency","score":0.5441449880599976},{"id":"https://openalex.org/keywords/bandwidth","display_name":"Bandwidth (computing)","score":0.48629340529441833},{"id":"https://openalex.org/keywords/electronic-circuit","display_name":"Electronic circuit","score":0.4848731458187103},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.4752875566482544},{"id":"https://openalex.org/keywords/power-bandwidth","display_name":"Power bandwidth","score":0.473913311958313},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.46351778507232666},{"id":"https://openalex.org/keywords/adjacent-channel-power-ratio","display_name":"Adjacent channel power ratio","score":0.4486052989959717},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.2793866991996765},{"id":"https://openalex.org/keywords/telecommunications","display_name":"Telecommunications","score":0.2716107964515686},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.13356733322143555}],"concepts":[{"id":"https://openalex.org/C194257627","wikidata":"https://www.wikidata.org/wiki/Q211554","display_name":"Amplifier","level":3,"score":0.8178411722183228},{"id":"https://openalex.org/C129231560","wikidata":"https://www.wikidata.org/wiki/Q7236462","display_name":"Power-added efficiency","level":5,"score":0.6947008371353149},{"id":"https://openalex.org/C94105702","wikidata":"https://www.wikidata.org/wiki/Q777017","display_name":"dBm","level":4,"score":0.6382508873939514},{"id":"https://openalex.org/C193523891","wikidata":"https://www.wikidata.org/wiki/Q1771950","display_name":"dBc","level":3,"score":0.6216589212417603},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.6106861233711243},{"id":"https://openalex.org/C196054291","wikidata":"https://www.wikidata.org/wiki/Q7276624","display_name":"RF power amplifier","level":4,"score":0.6053977012634277},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.5652645230293274},{"id":"https://openalex.org/C118993495","wikidata":"https://www.wikidata.org/wiki/Q5042828","display_name":"Electrical efficiency","level":3,"score":0.5441449880599976},{"id":"https://openalex.org/C2776257435","wikidata":"https://www.wikidata.org/wiki/Q1576430","display_name":"Bandwidth (computing)","level":2,"score":0.48629340529441833},{"id":"https://openalex.org/C134146338","wikidata":"https://www.wikidata.org/wiki/Q1815901","display_name":"Electronic circuit","level":2,"score":0.4848731458187103},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.4752875566482544},{"id":"https://openalex.org/C191907038","wikidata":"https://www.wikidata.org/wiki/Q7236476","display_name":"Power bandwidth","level":5,"score":0.473913311958313},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.46351778507232666},{"id":"https://openalex.org/C2776191232","wikidata":"https://www.wikidata.org/wiki/Q4683143","display_name":"Adjacent channel power ratio","level":5,"score":0.4486052989959717},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.2793866991996765},{"id":"https://openalex.org/C76155785","wikidata":"https://www.wikidata.org/wiki/Q418","display_name":"Telecommunications","level":1,"score":0.2716107964515686},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.13356733322143555},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/esscirc.2014.6942123","is_oa":false,"landing_page_url":"https://doi.org/10.1109/esscirc.2014.6942123","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"ESSCIRC 2014 - 40th European Solid State Circuits Conference (ESSCIRC)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.8799999952316284,"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":12,"referenced_works":["https://openalex.org/W2007360175","https://openalex.org/W2015709883","https://openalex.org/W2071764754","https://openalex.org/W2096149630","https://openalex.org/W2101055757","https://openalex.org/W2101929693","https://openalex.org/W2116062693","https://openalex.org/W2118716959","https://openalex.org/W2124232244","https://openalex.org/W2151107544","https://openalex.org/W2164060098","https://openalex.org/W6678351404"],"related_works":["https://openalex.org/W2972123820","https://openalex.org/W2067014476","https://openalex.org/W2321409073","https://openalex.org/W2675182538","https://openalex.org/W2053072109","https://openalex.org/W2160111818","https://openalex.org/W2913410448","https://openalex.org/W2738322351","https://openalex.org/W2061283621","https://openalex.org/W2538397358"],"abstract_inverted_index":{"A":[0,16],"high":[1],"efficiency":[2,45,88,95,104,128],"class-E":[3],"outphasing":[4],"RF":[5],"power":[6,38,47,52,82,99,108,138],"amplifier":[7,53],"is":[8,54,115,129],"presented":[9,66],"using":[10],"a":[11],"new":[12],"passive":[13],"combining":[14],"circuit.":[15],"Power":[17],"Enhancement":[18,24],"Circuit":[19,25],"(PEC)":[20],"and":[21,43,62,101,123],"an":[22],"Efficiency":[23],"(EEC)":[26],"are":[27,65],"also":[28],"proposed":[29,51,73],"as":[30],"part":[31],"of":[32,71],"the":[33,69,72],"combiner":[34],"that":[35],"increase":[36],"output":[37,81,91],"without":[39],"violating":[40],"reliability":[41],"limits":[42],"improve":[44],"at":[46,83,89,96,105],"back-off,":[48],"respectively.":[49],"The":[50,75],"designed":[55],"in":[56],"45nm":[57],"CMOS":[58],"technology.":[59],"Simulation":[60],"results":[61],"measurement":[63],"data":[64],"to":[67],"demonstrate":[68],"performance":[70],"PA.":[74],"PA":[76],"delivers":[77],"29.5":[78],"dBm":[79],"peak":[80,90],"2.4GHz":[84],"with":[85,117,121,131,134],"46.76%":[86],"drain":[87,94,103],"power,":[92],"32.96%":[93],"3":[97],"dB":[98,107,136],"back-off":[100],"21.16%":[102],"6":[106,135],"back-off.":[109],"Better":[110],"than":[111],"-50":[112],"dBc":[113],"ACPR":[114],"obtained":[116,130],"64-QAM":[118],"LTE":[119,132],"signal":[120,133],"10MHz":[122],"20MHz":[124],"bandwidth.":[125],"21%":[126],"average":[127],"peak-to-average":[137],"ratio":[139],"(PAPR).":[140]},"counts_by_year":[{"year":2021,"cited_by_count":1},{"year":2017,"cited_by_count":2},{"year":2016,"cited_by_count":1},{"year":2015,"cited_by_count":4}],"updated_date":"2026-07-14T23:27:15.235271","created_date":"2025-10-10T00:00:00"}