{"id":"https://openalex.org/W2034518430","doi":"https://doi.org/10.1109/esscirc.2014.6942088","title":"Dynamic range enhanced readout circuit for a capacitive touch screen panel with current subtraction technique","display_name":"Dynamic range enhanced readout circuit for a capacitive touch screen panel with current subtraction technique","publication_year":2014,"publication_date":"2014-09-01","ids":{"openalex":"https://openalex.org/W2034518430","doi":"https://doi.org/10.1109/esscirc.2014.6942088","mag":"2034518430"},"language":"en","primary_location":{"id":"doi:10.1109/esscirc.2014.6942088","is_oa":false,"landing_page_url":"https://doi.org/10.1109/esscirc.2014.6942088","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"ESSCIRC 2014 - 40th European Solid State Circuits Conference (ESSCIRC)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5091366075","display_name":"Sanghyun Heo","orcid":"https://orcid.org/0000-0002-2837-0834"},"institutions":[{"id":"https://openalex.org/I48566637","display_name":"Ulsan National Institute of Science and Technology","ror":"https://ror.org/017cjz748","country_code":"KR","type":"education","lineage":["https://openalex.org/I48566637"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Sanghyun Heo","raw_affiliation_strings":["School of Electrical and Computer Engineering, Ulsan National Institute of Science and Technology, Ulsan, Korea","School of Electrical and Computer Engineering, Ulsan National Institute of Science and Technology, , Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Electrical and Computer Engineering, Ulsan National Institute of Science and Technology, Ulsan, Korea","institution_ids":["https://openalex.org/I48566637"]},{"raw_affiliation_string":"School of Electrical and Computer Engineering, Ulsan National Institute of Science and Technology, , Korea","institution_ids":["https://openalex.org/I48566637"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5067311469","display_name":"Hyunggun Ma","orcid":"https://orcid.org/0000-0002-2976-7315"},"institutions":[{"id":"https://openalex.org/I48566637","display_name":"Ulsan National Institute of Science and Technology","ror":"https://ror.org/017cjz748","country_code":"KR","type":"education","lineage":["https://openalex.org/I48566637"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Hyunggun Ma","raw_affiliation_strings":["School of Electrical and Computer Engineering, Ulsan National Institute of Science and Technology, Ulsan, Korea","School of Electrical and Computer Engineering, Ulsan National Institute of Science and Technology, , Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Electrical and Computer Engineering, Ulsan National Institute of Science and Technology, Ulsan, Korea","institution_ids":["https://openalex.org/I48566637"]},{"raw_affiliation_string":"School of Electrical and Computer Engineering, Ulsan National Institute of Science and Technology, , Korea","institution_ids":["https://openalex.org/I48566637"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5000156837","display_name":"Jae Joon Kim","orcid":"https://orcid.org/0000-0003-4581-4115"},"institutions":[{"id":"https://openalex.org/I48566637","display_name":"Ulsan National Institute of Science and Technology","ror":"https://ror.org/017cjz748","country_code":"KR","type":"education","lineage":["https://openalex.org/I48566637"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Jae Joon Kim","raw_affiliation_strings":["School of Electrical and Computer Engineering, Ulsan National Institute of Science and Technology, Ulsan, Korea","School of Electrical and Computer Engineering, Ulsan National Institute of Science and Technology, , Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Electrical and Computer Engineering, Ulsan National Institute of Science and Technology, Ulsan, Korea","institution_ids":["https://openalex.org/I48566637"]},{"raw_affiliation_string":"School of Electrical and Computer Engineering, Ulsan National Institute of Science and Technology, , Korea","institution_ids":["https://openalex.org/I48566637"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5058339861","display_name":"Franklin Bien","orcid":"https://orcid.org/0000-0002-9582-295X"},"institutions":[{"id":"https://openalex.org/I48566637","display_name":"Ulsan National Institute of Science and Technology","ror":"https://ror.org/017cjz748","country_code":"KR","type":"education","lineage":["https://openalex.org/I48566637"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Franklin Bien","raw_affiliation_strings":["School of Electrical and Computer Engineering, Ulsan National Institute of Science and Technology, Ulsan, Korea","School of Electrical and Computer Engineering, Ulsan National Institute of Science and Technology, , Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Electrical and Computer Engineering, Ulsan National Institute of Science and Technology, Ulsan, Korea","institution_ids":["https://openalex.org/I48566637"]},{"raw_affiliation_string":"School of Electrical and Computer Engineering, Ulsan National Institute of Science and Technology, , Korea","institution_ids":["https://openalex.org/I48566637"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I48566637"],"apc_list":null,"apc_paid":null,"fwci":0.8517,"has_fulltext":false,"cited_by_count":5,"citation_normalized_percentile":{"value":0.77479247,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":97},"biblio":{"volume":null,"issue":null,"first_page":"327","last_page":"330"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11429","display_name":"Semiconductor Lasers and Optical Devices","score":0.9968000054359436,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11429","display_name":"Semiconductor Lasers and Optical Devices","score":0.9968000054359436,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10323","display_name":"Analog and Mixed-Signal Circuit Design","score":0.9847000241279602,"subfield":{"id":"https://openalex.org/subfields/2204","display_name":"Biomedical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10369","display_name":"Advanced MEMS and NEMS Technologies","score":0.979200005531311,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/capacitive-sensing","display_name":"Capacitive sensing","score":0.6360992789268494},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.6253775358200073},{"id":"https://openalex.org/keywords/dynamic-range","display_name":"Dynamic range","score":0.597900927066803},{"id":"https://openalex.org/keywords/signal","display_name":"SIGNAL (programming language)","score":0.5803657174110413},{"id":"https://openalex.org/keywords/capacitance","display_name":"Capacitance","score":0.5532497763633728},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.533697247505188},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.5274810194969177},{"id":"https://openalex.org/keywords/wide-dynamic-range","display_name":"Wide dynamic range","score":0.4220004975795746},{"id":"https://openalex.org/keywords/chip","display_name":"Chip","score":0.41814762353897095},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.3590043783187866},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.3519555330276489},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.3274882733821869},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.2257421612739563},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.21768391132354736},{"id":"https://openalex.org/keywords/electrode","display_name":"Electrode","score":0.1669934093952179}],"concepts":[{"id":"https://openalex.org/C206755178","wikidata":"https://www.wikidata.org/wiki/Q1131271","display_name":"Capacitive sensing","level":2,"score":0.6360992789268494},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.6253775358200073},{"id":"https://openalex.org/C87133666","wikidata":"https://www.wikidata.org/wiki/Q1161699","display_name":"Dynamic range","level":2,"score":0.597900927066803},{"id":"https://openalex.org/C2779843651","wikidata":"https://www.wikidata.org/wiki/Q7390335","display_name":"SIGNAL (programming language)","level":2,"score":0.5803657174110413},{"id":"https://openalex.org/C30066665","wikidata":"https://www.wikidata.org/wiki/Q164399","display_name":"Capacitance","level":3,"score":0.5532497763633728},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.533697247505188},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.5274810194969177},{"id":"https://openalex.org/C2776179129","wikidata":"https://www.wikidata.org/wiki/Q7998640","display_name":"Wide dynamic range","level":2,"score":0.4220004975795746},{"id":"https://openalex.org/C165005293","wikidata":"https://www.wikidata.org/wiki/Q1074500","display_name":"Chip","level":2,"score":0.41814762353897095},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.3590043783187866},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.3519555330276489},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.3274882733821869},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.2257421612739563},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.21768391132354736},{"id":"https://openalex.org/C17525397","wikidata":"https://www.wikidata.org/wiki/Q176140","display_name":"Electrode","level":2,"score":0.1669934093952179},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C199360897","wikidata":"https://www.wikidata.org/wiki/Q9143","display_name":"Programming language","level":1,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1109/esscirc.2014.6942088","is_oa":false,"landing_page_url":"https://doi.org/10.1109/esscirc.2014.6942088","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"ESSCIRC 2014 - 40th European Solid State Circuits Conference (ESSCIRC)","raw_type":"proceedings-article"},{"id":"pmh:oai:scholarworks.unist.ac.kr:201301/46907","is_oa":false,"landing_page_url":"https://scholarworks.unist.ac.kr/handle/201301/46907","pdf_url":null,"source":{"id":"https://openalex.org/S4306401118","display_name":"Scholarworks@UNIST (Ulsan National Institute of Science and Technology)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I48566637","host_organization_name":"Ulsan National Institute of Science and Technology","host_organization_lineage":["https://openalex.org/I48566637"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"","raw_type":"CONFERENCE"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.8999999761581421,"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy"}],"awards":[],"funders":[{"id":"https://openalex.org/F4320322030","display_name":"Ministry of Science, ICT and Future Planning","ror":"https://ror.org/032e49973"},{"id":"https://openalex.org/F4320332195","display_name":"Samsung","ror":"https://ror.org/04w3jy968"}],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":6,"referenced_works":["https://openalex.org/W1946167878","https://openalex.org/W1975830975","https://openalex.org/W2016203405","https://openalex.org/W2050698284","https://openalex.org/W2153020878","https://openalex.org/W6663031670"],"related_works":["https://openalex.org/W2348740411","https://openalex.org/W1966596465","https://openalex.org/W2051563071","https://openalex.org/W4386858602","https://openalex.org/W2337947459","https://openalex.org/W2118205267","https://openalex.org/W2126912594","https://openalex.org/W1988444705","https://openalex.org/W4292622326","https://openalex.org/W1972468229"],"abstract_inverted_index":{"A":[0,18,30,56],"dynamic":[1,96],"range":[2,99],"enhanced":[3],"readout":[4],"circuit":[5,22,58],"using":[6,23],"current":[7,62,80],"subtraction":[8],"technique":[9],"is":[10,28,39,66,75,90,135,142],"presented":[11],"for":[12],"a":[13,24,61,103,123],"capacitive":[14],"touch":[15,83],"screen":[16,84],"panels.":[17],"low-voltage,":[19],"analog":[20],"front-end":[21],"high-voltage":[25,126],"input":[26],"signal":[27,38],"implemented.":[29],"high":[31],"voltage":[32,52],"(>":[33],"10":[34],"V)":[35],"parallel":[36,87],"pulse":[37],"used":[40,91],"as":[41],"the":[42,70,82,95,109,133,139],"transmitter":[43],"signal.":[44],"The":[45,117,129],"receiver":[46],"system":[47],"was":[48,100,120],"designed":[49],"with":[50,60],"low":[51],"(<;":[53],"5":[54,115],"V).":[55],"current-subtraction":[57],"(CSC)":[59],"mirror":[63],"and":[64,107,138],"switches":[65],"proposed":[67,118],"to":[68,92,114],"improve":[69],"signal-to-noise":[71],"ratio":[72],"(SNR).":[73],"SNR":[74],"improved":[76],"by":[77,102],"removing":[78],"excessive":[79],"from":[81,112],"panel.":[85],"High-voltage":[86],"signaling":[88],"method":[89],"further":[93],"enhance":[94],"range.":[97],"Dynamic":[98],"increased":[101],"factor":[104],"of":[105,132],"four":[106],"reduced":[108],"feedback":[110],"capacitance":[111],"20":[113],"pF.":[116],"IC":[119],"implemented":[121],"in":[122],"TSMC":[124],"0.18-\u03bcm":[125],"CMOS":[127],"process.":[128],"power":[130],"consumption":[131],"chip":[134,140],"11.2":[136],"mW":[137],"size":[141],"2.5":[143,146],"mm":[144],"\u00d7":[145],"mm.":[147]},"counts_by_year":[{"year":2019,"cited_by_count":1},{"year":2017,"cited_by_count":1},{"year":2016,"cited_by_count":3}],"updated_date":"2026-06-26T08:34:08.712188","created_date":"2025-10-10T00:00:00"}