{"id":"https://openalex.org/W2047993549","doi":"https://doi.org/10.1109/esscirc.2013.6649164","title":"High temperature-low temperature coefficient analog voltage reference integrated circuit implemented with SiC MESFETs","display_name":"High temperature-low temperature coefficient analog voltage reference integrated circuit implemented with SiC MESFETs","publication_year":2013,"publication_date":"2013-09-01","ids":{"openalex":"https://openalex.org/W2047993549","doi":"https://doi.org/10.1109/esscirc.2013.6649164","mag":"2047993549"},"language":"en","primary_location":{"id":"doi:10.1109/esscirc.2013.6649164","is_oa":false,"landing_page_url":"https://doi.org/10.1109/esscirc.2013.6649164","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2013 Proceedings of the ESSCIRC (ESSCIRC)","raw_type":"proceedings-article"},"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5089483976","display_name":"V. Banu","orcid":"https://orcid.org/0000-0001-6572-9378"},"institutions":[{"id":"https://openalex.org/I134820265","display_name":"Consejo Superior de Investigaciones Cient\u00edficas","ror":"https://ror.org/02gfc7t72","country_code":"ES","type":"government","lineage":["https://openalex.org/I134820265"]},{"id":"https://openalex.org/I4210160312","display_name":"Institut de Microelectr\u00f2nica de Barcelona","ror":"https://ror.org/04pnym676","country_code":"ES","type":"facility","lineage":["https://openalex.org/I134820265","https://openalex.org/I4210147934","https://openalex.org/I4210160312"]}],"countries":["ES"],"is_corresponding":false,"raw_author_name":"Viorel Banu","raw_affiliation_strings":["IMB-CNM, Campus UAB, Bellaterra-Barcelona, Spain","CSIC, IMB-CNM, Barcelona, Spain"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IMB-CNM, Campus UAB, Bellaterra-Barcelona, Spain","institution_ids":["https://openalex.org/I4210160312"]},{"raw_affiliation_string":"CSIC, IMB-CNM, Barcelona, Spain","institution_ids":["https://openalex.org/I134820265"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5012359906","display_name":"Philippe Godignon","orcid":"https://orcid.org/0000-0002-9273-9819"},"institutions":[{"id":"https://openalex.org/I134820265","display_name":"Consejo Superior de Investigaciones Cient\u00edficas","ror":"https://ror.org/02gfc7t72","country_code":"ES","type":"government","lineage":["https://openalex.org/I134820265"]},{"id":"https://openalex.org/I4210160312","display_name":"Institut de Microelectr\u00f2nica de Barcelona","ror":"https://ror.org/04pnym676","country_code":"ES","type":"facility","lineage":["https://openalex.org/I134820265","https://openalex.org/I4210147934","https://openalex.org/I4210160312"]}],"countries":["ES"],"is_corresponding":false,"raw_author_name":"Philippe Godignon","raw_affiliation_strings":["IMB-CNM, Campus UAB, Bellaterra-Barcelona, Spain","CSIC, IMB-CNM, Barcelona, Spain"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IMB-CNM, Campus UAB, Bellaterra-Barcelona, Spain","institution_ids":["https://openalex.org/I4210160312"]},{"raw_affiliation_string":"CSIC, IMB-CNM, Barcelona, Spain","institution_ids":["https://openalex.org/I134820265"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5103518878","display_name":"Mihaela Alexandru","orcid":null},"institutions":[{"id":"https://openalex.org/I134820265","display_name":"Consejo Superior de Investigaciones Cient\u00edficas","ror":"https://ror.org/02gfc7t72","country_code":"ES","type":"government","lineage":["https://openalex.org/I134820265"]},{"id":"https://openalex.org/I4210160312","display_name":"Institut de Microelectr\u00f2nica de Barcelona","ror":"https://ror.org/04pnym676","country_code":"ES","type":"facility","lineage":["https://openalex.org/I134820265","https://openalex.org/I4210147934","https://openalex.org/I4210160312"]}],"countries":["ES"],"is_corresponding":false,"raw_author_name":"Mihaela Alexandru","raw_affiliation_strings":["IMB-CNM, Campus UAB, Bellaterra-Barcelona, Spain","CSIC, IMB-CNM, Barcelona, Spain"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IMB-CNM, Campus UAB, Bellaterra-Barcelona, Spain","institution_ids":["https://openalex.org/I4210160312"]},{"raw_affiliation_string":"CSIC, IMB-CNM, Barcelona, Spain","institution_ids":["https://openalex.org/I134820265"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5009741194","display_name":"M. Vellveh\u0131\u0301","orcid":"https://orcid.org/0000-0002-0127-4690"},"institutions":[{"id":"https://openalex.org/I134820265","display_name":"Consejo Superior de Investigaciones Cient\u00edficas","ror":"https://ror.org/02gfc7t72","country_code":"ES","type":"government","lineage":["https://openalex.org/I134820265"]},{"id":"https://openalex.org/I4210160312","display_name":"Institut de Microelectr\u00f2nica de Barcelona","ror":"https://ror.org/04pnym676","country_code":"ES","type":"facility","lineage":["https://openalex.org/I134820265","https://openalex.org/I4210147934","https://openalex.org/I4210160312"]}],"countries":["ES"],"is_corresponding":false,"raw_author_name":"Miquel Vellvehi","raw_affiliation_strings":["IMB-CNM, Campus UAB, Bellaterra-Barcelona, Spain","CSIC, IMB-CNM, Barcelona, Spain"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IMB-CNM, Campus UAB, Bellaterra-Barcelona, Spain","institution_ids":["https://openalex.org/I4210160312"]},{"raw_affiliation_string":"CSIC, IMB-CNM, Barcelona, Spain","institution_ids":["https://openalex.org/I134820265"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5035526543","display_name":"X. Jord\u00e0","orcid":"https://orcid.org/0000-0003-1967-610X"},"institutions":[{"id":"https://openalex.org/I134820265","display_name":"Consejo Superior de Investigaciones Cient\u00edficas","ror":"https://ror.org/02gfc7t72","country_code":"ES","type":"government","lineage":["https://openalex.org/I134820265"]},{"id":"https://openalex.org/I4210160312","display_name":"Institut de Microelectr\u00f2nica de Barcelona","ror":"https://ror.org/04pnym676","country_code":"ES","type":"facility","lineage":["https://openalex.org/I134820265","https://openalex.org/I4210147934","https://openalex.org/I4210160312"]}],"countries":["ES"],"is_corresponding":false,"raw_author_name":"Xavier Jorda","raw_affiliation_strings":["IMB-CNM, Campus UAB, Bellaterra-Barcelona, Spain","CSIC, IMB-CNM, Barcelona, Spain"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IMB-CNM, Campus UAB, Bellaterra-Barcelona, Spain","institution_ids":["https://openalex.org/I4210160312"]},{"raw_affiliation_string":"CSIC, IMB-CNM, Barcelona, Spain","institution_ids":["https://openalex.org/I134820265"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5050363894","display_name":"Jos\u00e9 del R. Mill\u00e1n","orcid":"https://orcid.org/0000-0001-5819-1522"},"institutions":[{"id":"https://openalex.org/I134820265","display_name":"Consejo Superior de Investigaciones Cient\u00edficas","ror":"https://ror.org/02gfc7t72","country_code":"ES","type":"government","lineage":["https://openalex.org/I134820265"]},{"id":"https://openalex.org/I4210160312","display_name":"Institut de Microelectr\u00f2nica de Barcelona","ror":"https://ror.org/04pnym676","country_code":"ES","type":"facility","lineage":["https://openalex.org/I134820265","https://openalex.org/I4210147934","https://openalex.org/I4210160312"]}],"countries":["ES"],"is_corresponding":false,"raw_author_name":"Jose Millan","raw_affiliation_strings":["IMB-CNM, Campus UAB, Bellaterra-Barcelona, Spain","CSIC, IMB-CNM, Barcelona, Spain"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IMB-CNM, Campus UAB, Bellaterra-Barcelona, Spain","institution_ids":["https://openalex.org/I4210160312"]},{"raw_affiliation_string":"CSIC, IMB-CNM, Barcelona, Spain","institution_ids":["https://openalex.org/I134820265"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":2.8371,"has_fulltext":false,"cited_by_count":11,"citation_normalized_percentile":{"value":0.91149556,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":89,"max":98},"biblio":{"volume":"679 680","issue":null,"first_page":"427","last_page":"430"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9991000294685364,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10323","display_name":"Analog and Mixed-Signal Circuit Design","score":0.9987999796867371,"subfield":{"id":"https://openalex.org/subfields/2204","display_name":"Biomedical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/mesfet","display_name":"MESFET","score":0.9217755198478699},{"id":"https://openalex.org/keywords/bandgap-voltage-reference","display_name":"Bandgap voltage reference","score":0.8938964605331421},{"id":"https://openalex.org/keywords/temperature-coefficient","display_name":"Temperature coefficient","score":0.7952375411987305},{"id":"https://openalex.org/keywords/silicon-bandgap-temperature-sensor","display_name":"Silicon bandgap temperature sensor","score":0.7912396192550659},{"id":"https://openalex.org/keywords/zener-diode","display_name":"Zener diode","score":0.7163223028182983},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.67507004737854},{"id":"https://openalex.org/keywords/voltage-reference","display_name":"Voltage reference","score":0.6422107219696045},{"id":"https://openalex.org/keywords/schematic","display_name":"Schematic","score":0.5891019701957703},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.5766798257827759},{"id":"https://openalex.org/keywords/silicon-carbide","display_name":"Silicon carbide","score":0.5628845691680908},{"id":"https://openalex.org/keywords/operational-amplifier","display_name":"Operational amplifier","score":0.5510410666465759},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.49634891748428345},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.4732288122177124},{"id":"https://openalex.org/keywords/integrated-circuit","display_name":"Integrated circuit","score":0.42642003297805786},{"id":"https://openalex.org/keywords/amplifier","display_name":"Amplifier","score":0.39025163650512695},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.3520375192165375},{"id":"https://openalex.org/keywords/resistor","display_name":"Resistor","score":0.25189095735549927},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.1994228959083557},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.19386592507362366},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.1838979721069336},{"id":"https://openalex.org/keywords/dropout-voltage","display_name":"Dropout voltage","score":0.15146875381469727},{"id":"https://openalex.org/keywords/field-effect-transistor","display_name":"Field-effect transistor","score":0.11522862315177917}],"concepts":[{"id":"https://openalex.org/C134123091","wikidata":"https://www.wikidata.org/wiki/Q1837339","display_name":"MESFET","level":5,"score":0.9217755198478699},{"id":"https://openalex.org/C127033052","wikidata":"https://www.wikidata.org/wiki/Q48635","display_name":"Bandgap voltage reference","level":5,"score":0.8938964605331421},{"id":"https://openalex.org/C16643434","wikidata":"https://www.wikidata.org/wiki/Q898642","display_name":"Temperature coefficient","level":2,"score":0.7952375411987305},{"id":"https://openalex.org/C168032602","wikidata":"https://www.wikidata.org/wiki/Q7515014","display_name":"Silicon bandgap temperature sensor","level":5,"score":0.7912396192550659},{"id":"https://openalex.org/C50566616","wikidata":"https://www.wikidata.org/wiki/Q180586","display_name":"Zener diode","level":4,"score":0.7163223028182983},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.67507004737854},{"id":"https://openalex.org/C44351266","wikidata":"https://www.wikidata.org/wiki/Q1465532","display_name":"Voltage reference","level":3,"score":0.6422107219696045},{"id":"https://openalex.org/C192328126","wikidata":"https://www.wikidata.org/wiki/Q4514647","display_name":"Schematic","level":2,"score":0.5891019701957703},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5766798257827759},{"id":"https://openalex.org/C2780722187","wikidata":"https://www.wikidata.org/wiki/Q412356","display_name":"Silicon carbide","level":2,"score":0.5628845691680908},{"id":"https://openalex.org/C145366948","wikidata":"https://www.wikidata.org/wiki/Q178947","display_name":"Operational amplifier","level":4,"score":0.5510410666465759},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.49634891748428345},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.4732288122177124},{"id":"https://openalex.org/C530198007","wikidata":"https://www.wikidata.org/wiki/Q80831","display_name":"Integrated circuit","level":2,"score":0.42642003297805786},{"id":"https://openalex.org/C194257627","wikidata":"https://www.wikidata.org/wiki/Q211554","display_name":"Amplifier","level":3,"score":0.39025163650512695},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.3520375192165375},{"id":"https://openalex.org/C137488568","wikidata":"https://www.wikidata.org/wiki/Q5321","display_name":"Resistor","level":3,"score":0.25189095735549927},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.1994228959083557},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.19386592507362366},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.1838979721069336},{"id":"https://openalex.org/C15032970","wikidata":"https://www.wikidata.org/wiki/Q851210","display_name":"Dropout voltage","level":4,"score":0.15146875381469727},{"id":"https://openalex.org/C145598152","wikidata":"https://www.wikidata.org/wiki/Q176097","display_name":"Field-effect transistor","level":4,"score":0.11522862315177917},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/esscirc.2013.6649164","is_oa":false,"landing_page_url":"https://doi.org/10.1109/esscirc.2013.6649164","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2013 Proceedings of the ESSCIRC (ESSCIRC)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","score":0.8100000023841858,"id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":12,"referenced_works":["https://openalex.org/W1520251363","https://openalex.org/W1986463681","https://openalex.org/W1998392241","https://openalex.org/W2002693899","https://openalex.org/W2072222338","https://openalex.org/W2086188877","https://openalex.org/W2102228575","https://openalex.org/W2116841248","https://openalex.org/W2134660036","https://openalex.org/W2140008510","https://openalex.org/W2168250870","https://openalex.org/W6637428112"],"related_works":["https://openalex.org/W2370820504","https://openalex.org/W2542178378","https://openalex.org/W2020076701","https://openalex.org/W2021883684","https://openalex.org/W2003599655","https://openalex.org/W2380723001","https://openalex.org/W2014372698","https://openalex.org/W2387839746","https://openalex.org/W2382539836","https://openalex.org/W2270379489"],"abstract_inverted_index":{"A":[0,25],"high":[1],"temperature":[2,75,112],"compensated":[3],"voltage":[4,91],"reference":[5,55],"integrated":[6],"circuit":[7,43,98,107],"(IC),":[8],"was":[9,30],"designed":[10],"and":[11,37,56,85],"for":[12,32],"the":[13,38,41,52,58,88,96],"first":[14],"time":[15],"fabricated":[16],"on":[17,46,71,93],"silicon":[18],"carbide":[19],"(SiC)":[20],"material,":[21],"using":[22,61],"MESFET":[23,29],"devices.":[24],"planar":[26],"finger":[27],"type":[28],"developed":[31,70],"this":[33],"purpose.":[34],"The":[35,73,106],"schematic":[36],"principle":[39],"of":[40,60],"presented":[42],"is":[44,67,78,99],"based":[45],"a":[47,82,110],"new":[48],"concept":[49],"that":[50],"replace":[51],"typical":[53],"bandgap":[54,90],"avoid":[57],"necessity":[59],"an":[62],"operational":[63],"amplifier":[64],"(OpAmp),":[65],"which":[66],"not":[68],"yet":[69],"SiC.":[72],"experimental":[74],"coefficient":[76],"(TC)":[77],"significantly":[79],"better":[80],"than":[81],"Zener":[83],"diode":[84],"comparable":[86],"to":[87,101,104],"normal":[89],"references":[92],"silicon,":[94],"but":[95],"present":[97],"able":[100],"work":[102],"up":[103],"300\u00b0C.":[105],"contains":[108],"also":[109],"linearized":[111],"sensor.":[113]},"counts_by_year":[{"year":2021,"cited_by_count":1},{"year":2019,"cited_by_count":2},{"year":2017,"cited_by_count":1},{"year":2015,"cited_by_count":2},{"year":2014,"cited_by_count":4},{"year":2013,"cited_by_count":1}],"updated_date":"2026-07-29T14:22:42.915294","created_date":"2025-10-10T00:00:00"}