{"id":"https://openalex.org/W2080487233","doi":"https://doi.org/10.1109/esscirc.2012.6341248","title":"Challenges and opportunities for circuit design in nano-scale CMOS technologies","display_name":"Challenges and opportunities for circuit design in nano-scale CMOS technologies","publication_year":2012,"publication_date":"2012-09-01","ids":{"openalex":"https://openalex.org/W2080487233","doi":"https://doi.org/10.1109/esscirc.2012.6341248","mag":"2080487233"},"language":"en","primary_location":{"id":"doi:10.1109/esscirc.2012.6341248","is_oa":false,"landing_page_url":"https://doi.org/10.1109/esscirc.2012.6341248","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2012 Proceedings of the ESSCIRC (ESSCIRC)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5100629178","display_name":"Guomin Zhang","orcid":"https://orcid.org/0000-0002-3503-7431"},"institutions":[{"id":"https://openalex.org/I1343180700","display_name":"Intel (United States)","ror":"https://ror.org/01ek73717","country_code":"US","type":"company","lineage":["https://openalex.org/I1343180700"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"Kevin Zhang","raw_affiliation_strings":["Logic Technology Development, Intel Corporation, Hillsboro, OR, USA","Logic Technology Development, Intel Corporation, Hillsboro, Oregon, 97124, USA"],"affiliations":[{"raw_affiliation_string":"Logic Technology Development, Intel Corporation, Hillsboro, OR, USA","institution_ids":["https://openalex.org/I1343180700"]},{"raw_affiliation_string":"Logic Technology Development, Intel Corporation, Hillsboro, Oregon, 97124, USA","institution_ids":["https://openalex.org/I1343180700"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":["https://openalex.org/A5100629178"],"corresponding_institution_ids":["https://openalex.org/I1343180700"],"apc_list":null,"apc_paid":null,"fwci":0.491,"has_fulltext":false,"cited_by_count":2,"citation_normalized_percentile":{"value":0.6957649,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":94,"max":96},"biblio":{"volume":null,"issue":null,"first_page":"28","last_page":"29"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9990000128746033,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T14117","display_name":"Integrated Circuits and Semiconductor Failure Analysis","score":0.9950000047683716,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.8371000289916992},{"id":"https://openalex.org/keywords/scaling","display_name":"Scaling","score":0.5899364352226257},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.5580626130104065},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.46091559529304504},{"id":"https://openalex.org/keywords/diode-or-circuit","display_name":"Diode-or circuit","score":0.4423760771751404},{"id":"https://openalex.org/keywords/nanoelectronics","display_name":"Nanoelectronics","score":0.4356539249420166},{"id":"https://openalex.org/keywords/circuit-design","display_name":"Circuit design","score":0.43145155906677246},{"id":"https://openalex.org/keywords/integrated-circuit-design","display_name":"Integrated circuit design","score":0.4276924729347229},{"id":"https://openalex.org/keywords/focus","display_name":"Focus (optics)","score":0.4154244661331177},{"id":"https://openalex.org/keywords/computer-architecture","display_name":"Computer architecture","score":0.3675857186317444},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.3368338346481323},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.2934553027153015},{"id":"https://openalex.org/keywords/embedded-system","display_name":"Embedded system","score":0.2314353883266449},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.19705122709274292},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.14492440223693848},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.13544520735740662},{"id":"https://openalex.org/keywords/discrete-circuit","display_name":"Discrete circuit","score":0.13056877255439758},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.10032039880752563}],"concepts":[{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.8371000289916992},{"id":"https://openalex.org/C99844830","wikidata":"https://www.wikidata.org/wiki/Q102441924","display_name":"Scaling","level":2,"score":0.5899364352226257},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.5580626130104065},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.46091559529304504},{"id":"https://openalex.org/C171065743","wikidata":"https://www.wikidata.org/wiki/Q5279089","display_name":"Diode-or circuit","level":5,"score":0.4423760771751404},{"id":"https://openalex.org/C141400236","wikidata":"https://www.wikidata.org/wiki/Q1479544","display_name":"Nanoelectronics","level":2,"score":0.4356539249420166},{"id":"https://openalex.org/C190560348","wikidata":"https://www.wikidata.org/wiki/Q3245116","display_name":"Circuit design","level":2,"score":0.43145155906677246},{"id":"https://openalex.org/C74524168","wikidata":"https://www.wikidata.org/wiki/Q1074539","display_name":"Integrated circuit design","level":2,"score":0.4276924729347229},{"id":"https://openalex.org/C192209626","wikidata":"https://www.wikidata.org/wiki/Q190909","display_name":"Focus (optics)","level":2,"score":0.4154244661331177},{"id":"https://openalex.org/C118524514","wikidata":"https://www.wikidata.org/wiki/Q173212","display_name":"Computer architecture","level":1,"score":0.3675857186317444},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3368338346481323},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.2934553027153015},{"id":"https://openalex.org/C149635348","wikidata":"https://www.wikidata.org/wiki/Q193040","display_name":"Embedded system","level":1,"score":0.2314353883266449},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.19705122709274292},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.14492440223693848},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.13544520735740662},{"id":"https://openalex.org/C188058453","wikidata":"https://www.wikidata.org/wiki/Q1815901","display_name":"Discrete circuit","level":4,"score":0.13056877255439758},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.10032039880752563},{"id":"https://openalex.org/C2524010","wikidata":"https://www.wikidata.org/wiki/Q8087","display_name":"Geometry","level":1,"score":0.0},{"id":"https://openalex.org/C33923547","wikidata":"https://www.wikidata.org/wiki/Q395","display_name":"Mathematics","level":0,"score":0.0},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/esscirc.2012.6341248","is_oa":false,"landing_page_url":"https://doi.org/10.1109/esscirc.2012.6341248","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2012 Proceedings of the ESSCIRC (ESSCIRC)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.6200000047683716,"id":"https://metadata.un.org/sdg/9","display_name":"Industry, innovation and infrastructure"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":0,"referenced_works":[],"related_works":["https://openalex.org/W1563340075","https://openalex.org/W2390607226","https://openalex.org/W2089791793","https://openalex.org/W2070694218","https://openalex.org/W2367731500","https://openalex.org/W2532822217","https://openalex.org/W2110093105","https://openalex.org/W1527543073","https://openalex.org/W2131777438","https://openalex.org/W2907442000"],"abstract_inverted_index":{"CMOS":[0],"technology":[1,6],"scaling":[2,40],"trend":[3],"and":[4,28],"latest":[5],"innovations":[7],"will":[8,15,41],"be":[9,42],"discussed":[10],"first.":[11],"Then":[12],"the":[13,18],"paper":[14],"focus":[16],"on":[17],"challenges":[19],"in":[20],"several":[21],"critical":[22],"circuit":[23],"areas,":[24],"including":[25],"both":[26],"analog":[27],"memory":[29],"for":[30],"high-performance":[31],"microprocessors.":[32],"Some":[33],"innovative":[34],"design":[35],"solutions":[36],"to":[37],"enable":[38],"future":[39],"discussed.":[43]},"counts_by_year":[{"year":2015,"cited_by_count":2}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}