{"id":"https://openalex.org/W2004915221","doi":"https://doi.org/10.1109/esscirc.2011.6044915","title":"Current status on GaN-based RF-power devices","display_name":"Current status on GaN-based RF-power devices","publication_year":2011,"publication_date":"2011-09-01","ids":{"openalex":"https://openalex.org/W2004915221","doi":"https://doi.org/10.1109/esscirc.2011.6044915","mag":"2004915221"},"language":"en","primary_location":{"id":"doi:10.1109/esscirc.2011.6044915","is_oa":false,"landing_page_url":"https://doi.org/10.1109/esscirc.2011.6044915","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2011 Proceedings of the ESSCIRC (ESSCIRC)","raw_type":"proceedings-article"},"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5077565266","display_name":"Tetsuzo Ueda","orcid":"https://orcid.org/0000-0003-3615-4354"},"institutions":[{"id":"https://openalex.org/I1283155146","display_name":"Panasonic (Japan)","ror":"https://ror.org/011tm7n37","country_code":"JP","type":"company","lineage":["https://openalex.org/I1283155146"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Tetsuzo Ueda","raw_affiliation_strings":["Semiconductor Device Research Center, Semiconductor Company, Panasonic Corporation, Nagaokakyo, Kyoto, Japan","Semiconductor Device Research Center, Semiconductor Company, Panasonic Corporation, 1 Kotari\u2010yakemachi, Nagaokakyo\u2010shi, Kyoto 617\u20108520, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Semiconductor Device Research Center, Semiconductor Company, Panasonic Corporation, Nagaokakyo, Kyoto, Japan","institution_ids":["https://openalex.org/I1283155146"]},{"raw_affiliation_string":"Semiconductor Device Research Center, Semiconductor Company, Panasonic Corporation, 1 Kotari\u2010yakemachi, Nagaokakyo\u2010shi, Kyoto 617\u20108520, Japan","institution_ids":["https://openalex.org/I1283155146"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5028521561","display_name":"Tsuyoshi Tanaka","orcid":"https://orcid.org/0000-0003-2601-2256"},"institutions":[{"id":"https://openalex.org/I1283155146","display_name":"Panasonic (Japan)","ror":"https://ror.org/011tm7n37","country_code":"JP","type":"company","lineage":["https://openalex.org/I1283155146"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Tsuyoshi Tanaka","raw_affiliation_strings":["Semiconductor Device Research Center, Semiconductor Company, Panasonic Corporation, Nagaokakyo, Kyoto, Japan","Semiconductor Device Research Center, Semiconductor Company, Panasonic Corporation, 1 Kotari\u2010yakemachi, Nagaokakyo\u2010shi, Kyoto 617\u20108520, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Semiconductor Device Research Center, Semiconductor Company, Panasonic Corporation, Nagaokakyo, Kyoto, Japan","institution_ids":["https://openalex.org/I1283155146"]},{"raw_affiliation_string":"Semiconductor Device Research Center, Semiconductor Company, Panasonic Corporation, 1 Kotari\u2010yakemachi, Nagaokakyo\u2010shi, Kyoto 617\u20108520, Japan","institution_ids":["https://openalex.org/I1283155146"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5110602241","display_name":"Daisuke Ueda","orcid":null},"institutions":[{"id":"https://openalex.org/I1283155146","display_name":"Panasonic (Japan)","ror":"https://ror.org/011tm7n37","country_code":"JP","type":"company","lineage":["https://openalex.org/I1283155146"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Daisuke Ueda","raw_affiliation_strings":["Advanced Technology Research Laboratories, Panasonic Corporation, Kyoto, Japan","Advanced Technology Research Laboratories, Panasonic Corporation, 3-4 Hikaridai, Seika-cho, Souraku-gun, Kyoto, 619-0237, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Advanced Technology Research Laboratories, Panasonic Corporation, Kyoto, Japan","institution_ids":["https://openalex.org/I1283155146"]},{"raw_affiliation_string":"Advanced Technology Research Laboratories, Panasonic Corporation, 3-4 Hikaridai, Seika-cho, Souraku-gun, Kyoto, 619-0237, Japan","institution_ids":["https://openalex.org/I1283155146"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I1283155146"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":1,"citation_normalized_percentile":{"value":0.11384919,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":94},"biblio":{"volume":null,"issue":null,"first_page":"61","last_page":"66"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9991000294685364,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.7379109859466553},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.6490904688835144},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.6305800676345825},{"id":"https://openalex.org/keywords/power-semiconductor-device","display_name":"Power semiconductor device","score":0.5538682341575623},{"id":"https://openalex.org/keywords/chemical-vapor-deposition","display_name":"Chemical vapor deposition","score":0.4964497685432434},{"id":"https://openalex.org/keywords/fabrication","display_name":"Fabrication","score":0.49068009853363037},{"id":"https://openalex.org/keywords/metalorganic-vapour-phase-epitaxy","display_name":"Metalorganic vapour phase epitaxy","score":0.4831473231315613},{"id":"https://openalex.org/keywords/rf-power-amplifier","display_name":"RF power amplifier","score":0.46560150384902954},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.4499833583831787},{"id":"https://openalex.org/keywords/gallium-nitride","display_name":"Gallium nitride","score":0.43572354316711426},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.4332329034805298},{"id":"https://openalex.org/keywords/epitaxy","display_name":"Epitaxy","score":0.3327106833457947},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.32122936844825745},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.3211590647697449},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.20985767245292664},{"id":"https://openalex.org/keywords/amplifier","display_name":"Amplifier","score":0.19401592016220093},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.08903864026069641}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7379109859466553},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.6490904688835144},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.6305800676345825},{"id":"https://openalex.org/C129014197","wikidata":"https://www.wikidata.org/wiki/Q906544","display_name":"Power semiconductor device","level":3,"score":0.5538682341575623},{"id":"https://openalex.org/C57410435","wikidata":"https://www.wikidata.org/wiki/Q505668","display_name":"Chemical vapor deposition","level":2,"score":0.4964497685432434},{"id":"https://openalex.org/C136525101","wikidata":"https://www.wikidata.org/wiki/Q5428139","display_name":"Fabrication","level":3,"score":0.49068009853363037},{"id":"https://openalex.org/C175665537","wikidata":"https://www.wikidata.org/wiki/Q1924991","display_name":"Metalorganic vapour phase epitaxy","level":4,"score":0.4831473231315613},{"id":"https://openalex.org/C196054291","wikidata":"https://www.wikidata.org/wiki/Q7276624","display_name":"RF power amplifier","level":4,"score":0.46560150384902954},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.4499833583831787},{"id":"https://openalex.org/C2778871202","wikidata":"https://www.wikidata.org/wiki/Q411713","display_name":"Gallium nitride","level":3,"score":0.43572354316711426},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.4332329034805298},{"id":"https://openalex.org/C110738630","wikidata":"https://www.wikidata.org/wiki/Q1135540","display_name":"Epitaxy","level":3,"score":0.3327106833457947},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.32122936844825745},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.3211590647697449},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.20985767245292664},{"id":"https://openalex.org/C194257627","wikidata":"https://www.wikidata.org/wiki/Q211554","display_name":"Amplifier","level":3,"score":0.19401592016220093},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.08903864026069641},{"id":"https://openalex.org/C142724271","wikidata":"https://www.wikidata.org/wiki/Q7208","display_name":"Pathology","level":1,"score":0.0},{"id":"https://openalex.org/C204787440","wikidata":"https://www.wikidata.org/wiki/Q188504","display_name":"Alternative medicine","level":2,"score":0.0},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0},{"id":"https://openalex.org/C71924100","wikidata":"https://www.wikidata.org/wiki/Q11190","display_name":"Medicine","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/esscirc.2011.6044915","is_oa":false,"landing_page_url":"https://doi.org/10.1109/esscirc.2011.6044915","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2011 Proceedings of the ESSCIRC (ESSCIRC)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":11,"referenced_works":["https://openalex.org/W1977732629","https://openalex.org/W2063074052","https://openalex.org/W2114001304","https://openalex.org/W2136514507","https://openalex.org/W2172238407","https://openalex.org/W2467957379","https://openalex.org/W2468666798","https://openalex.org/W2475170651","https://openalex.org/W6720086014","https://openalex.org/W6720223834","https://openalex.org/W6720906349"],"related_works":["https://openalex.org/W2017762799","https://openalex.org/W2490645814","https://openalex.org/W2887373871","https://openalex.org/W2382060748","https://openalex.org/W2176034509","https://openalex.org/W638549368","https://openalex.org/W1979426016","https://openalex.org/W2040216855","https://openalex.org/W2074587381","https://openalex.org/W4248780475"],"abstract_inverted_index":{"In":[0],"this":[1],"paper,":[2],"we":[3,84,162],"review":[4],"the":[5,33,39,42,48,68,72,75,80,124,144,148,152,155,159],"recent":[6],"advances":[7],"of":[8,41,123,154,194,198],"GaN":[9],"power":[10,81,166,183],"switching":[11,82,180],"and":[12,74,169,181],"RF":[13,160,182],"transistors":[14],"developed":[15],"at":[16,79,147,151,167,171],"Panasonic.":[17],"The":[18,105],"presented":[19],"devices":[20,175,184],"are":[21,29,107,188],"formed":[22],"on":[23,130,176,185],"cost":[24,202],"effective":[25],"Si":[26,61,131,186],"substrates,":[27],"which":[28,116,142],"very":[30,189],"promising":[31,190],"for":[32,95,109,158,191],"future":[34],"mass":[35],"production":[36],"contributing":[37],"to":[38,112,128],"reduction":[40],"total":[43],"fabrication":[44],"cost.":[45],"We":[46],"develop":[47],"epitaxial":[49],"growth":[50],"technology":[51],"using":[52],"metal":[53],"organic":[54],"chemical":[55],"vapor":[56],"deposition":[57],"(MOCVD)":[58],"over":[59],"6-inch":[60],"substrates":[62,187],"by":[63,71,134,173],"novel":[64,136],"buffer":[65],"layers":[66],"relaxing":[67],"stress":[69],"caused":[70],"lattice":[73],"thermal":[76],"mismatches.":[77],"Aiming":[78],"applications,":[83],"propose":[85],"a":[86,114,135,192],"new":[87],"device":[88],"structure":[89,141],"called":[90],"Gate":[91],"Injection":[92],"Transistor":[93],"(GIT)":[94],"strongly":[96],"desired":[97],"normally-off":[98],"operation":[99],"together":[100],"with":[101,203],"low":[102,201],"on-state":[103],"resistances.":[104],"GITs":[106],"applied":[108],"an":[110],"inverter":[111],"drive":[113],"motor":[115],"exhibits":[117],"high":[118],"operating":[119],"efficiencies.":[120],"Further":[121],"increase":[122],"breakdown":[125],"voltages":[126],"up":[127],"2200V":[129],"is":[132],"achieved":[133],"Blocking":[137],"Voltage":[138],"Boosting":[139],"(BVB)":[140],"prevents":[143],"inversion":[145],"elections":[146],"AlN/Si":[149],"flowing":[150],"periphery":[153],"chips.":[156],"As":[157],"devices,":[161],"present":[163],"203W":[164],"output":[165],"2.5GHz":[168],"10.7W":[170],"26.5GHz":[172],"AlGaN/GaN":[174],"Si.":[177],"These":[178],"GaN-based":[179],"variety":[193],"applications":[195],"taking":[196],"advantages":[197],"their":[199],"inherent":[200],"superior":[204],"performances.":[205]},"counts_by_year":[{"year":2015,"cited_by_count":1}],"updated_date":"2026-07-29T14:22:42.915294","created_date":"2025-10-10T00:00:00"}