{"id":"https://openalex.org/W2169089880","doi":"https://doi.org/10.1109/esscirc.2008.4681841","title":"On-chip leakage monitor circuit to scan optimal reverse bias voltage for adaptive body-bias circuit under gate induced drain leakage effect","display_name":"On-chip leakage monitor circuit to scan optimal reverse bias voltage for adaptive body-bias circuit under gate induced drain leakage effect","publication_year":2008,"publication_date":"2008-09-01","ids":{"openalex":"https://openalex.org/W2169089880","doi":"https://doi.org/10.1109/esscirc.2008.4681841","mag":"2169089880"},"language":"en","primary_location":{"id":"doi:10.1109/esscirc.2008.4681841","is_oa":false,"landing_page_url":"https://doi.org/10.1109/esscirc.2008.4681841","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"ESSCIRC 2008 - 34th European Solid-State Circuits Conference","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5113794663","display_name":"M. Fujii","orcid":null},"institutions":[{"id":"https://openalex.org/I4210153176","display_name":"Renesas Electronics (Japan)","ror":"https://ror.org/058wb7691","country_code":"JP","type":"company","lineage":["https://openalex.org/I4210153176"]}],"countries":["JP"],"is_corresponding":true,"raw_author_name":"M. Fujii","raw_affiliation_strings":["Renesas Technology Corporation, Itami, Hyogo, Japan"],"affiliations":[{"raw_affiliation_string":"Renesas Technology Corporation, Itami, Hyogo, Japan","institution_ids":["https://openalex.org/I4210153176"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5014500771","display_name":"Hiroaki Suzuki","orcid":"https://orcid.org/0000-0002-3535-703X"},"institutions":[{"id":"https://openalex.org/I4210153176","display_name":"Renesas Electronics (Japan)","ror":"https://ror.org/058wb7691","country_code":"JP","type":"company","lineage":["https://openalex.org/I4210153176"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"H. Suzuki","raw_affiliation_strings":["Renesas Technology Corporation, Itami, Hyogo, Japan"],"affiliations":[{"raw_affiliation_string":"Renesas Technology Corporation, Itami, Hyogo, Japan","institution_ids":["https://openalex.org/I4210153176"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5078925467","display_name":"H. Notani","orcid":null},"institutions":[{"id":"https://openalex.org/I4210153176","display_name":"Renesas Electronics (Japan)","ror":"https://ror.org/058wb7691","country_code":"JP","type":"company","lineage":["https://openalex.org/I4210153176"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"H. Notani","raw_affiliation_strings":["Renesas Technology Corporation, Itami, Hyogo, Japan"],"affiliations":[{"raw_affiliation_string":"Renesas Technology Corporation, Itami, Hyogo, Japan","institution_ids":["https://openalex.org/I4210153176"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5003278716","display_name":"Hiroshi Makino","orcid":"https://orcid.org/0000-0001-6444-133X"},"institutions":[{"id":"https://openalex.org/I4210153176","display_name":"Renesas Electronics (Japan)","ror":"https://ror.org/058wb7691","country_code":"JP","type":"company","lineage":["https://openalex.org/I4210153176"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"H. Makino","raw_affiliation_strings":["Renesas Technology Corporation, Itami, Hyogo, Japan"],"affiliations":[{"raw_affiliation_string":"Renesas Technology Corporation, Itami, Hyogo, Japan","institution_ids":["https://openalex.org/I4210153176"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5008563407","display_name":"Hirofumi Shinohara","orcid":"https://orcid.org/0000-0001-5589-8397"},"institutions":[{"id":"https://openalex.org/I4210153176","display_name":"Renesas Electronics (Japan)","ror":"https://ror.org/058wb7691","country_code":"JP","type":"company","lineage":["https://openalex.org/I4210153176"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"H. Shinohara","raw_affiliation_strings":["Renesas Technology Corporation, Itami, Hyogo, Japan"],"affiliations":[{"raw_affiliation_string":"Renesas Technology Corporation, Itami, Hyogo, Japan","institution_ids":["https://openalex.org/I4210153176"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":5,"corresponding_author_ids":["https://openalex.org/A5113794663"],"corresponding_institution_ids":["https://openalex.org/I4210153176"],"apc_list":null,"apc_paid":null,"fwci":0.6659,"has_fulltext":false,"cited_by_count":7,"citation_normalized_percentile":{"value":0.7499777,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":96},"biblio":{"volume":"40","issue":null,"first_page":"258","last_page":"261"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/leakage","display_name":"Leakage (economics)","score":0.8167116641998291},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.595869243144989},{"id":"https://openalex.org/keywords/biasing","display_name":"Biasing","score":0.5707241296768188},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.5574140548706055},{"id":"https://openalex.org/keywords/replica","display_name":"Replica","score":0.5401976704597473},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.5310806632041931},{"id":"https://openalex.org/keywords/chip","display_name":"Chip","score":0.4928748607635498},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.4795653223991394},{"id":"https://openalex.org/keywords/reverse-bias","display_name":"Reverse bias","score":0.46631771326065063},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.3735696077346802},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.34693533182144165},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.2192872166633606}],"concepts":[{"id":"https://openalex.org/C2777042071","wikidata":"https://www.wikidata.org/wiki/Q6509304","display_name":"Leakage (economics)","level":2,"score":0.8167116641998291},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.595869243144989},{"id":"https://openalex.org/C20254490","wikidata":"https://www.wikidata.org/wiki/Q719550","display_name":"Biasing","level":3,"score":0.5707241296768188},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.5574140548706055},{"id":"https://openalex.org/C2775937380","wikidata":"https://www.wikidata.org/wiki/Q1232589","display_name":"Replica","level":2,"score":0.5401976704597473},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5310806632041931},{"id":"https://openalex.org/C165005293","wikidata":"https://www.wikidata.org/wiki/Q1074500","display_name":"Chip","level":2,"score":0.4928748607635498},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.4795653223991394},{"id":"https://openalex.org/C2987974824","wikidata":"https://www.wikidata.org/wiki/Q176300","display_name":"Reverse bias","level":3,"score":0.46631771326065063},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3735696077346802},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.34693533182144165},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.2192872166633606},{"id":"https://openalex.org/C142362112","wikidata":"https://www.wikidata.org/wiki/Q735","display_name":"Art","level":0,"score":0.0},{"id":"https://openalex.org/C153349607","wikidata":"https://www.wikidata.org/wiki/Q36649","display_name":"Visual arts","level":1,"score":0.0},{"id":"https://openalex.org/C162324750","wikidata":"https://www.wikidata.org/wiki/Q8134","display_name":"Economics","level":0,"score":0.0},{"id":"https://openalex.org/C139719470","wikidata":"https://www.wikidata.org/wiki/Q39680","display_name":"Macroeconomics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/esscirc.2008.4681841","is_oa":false,"landing_page_url":"https://doi.org/10.1109/esscirc.2008.4681841","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"ESSCIRC 2008 - 34th European Solid-State Circuits Conference","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy","score":0.800000011920929}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":11,"referenced_works":["https://openalex.org/W2103078379","https://openalex.org/W2108143446","https://openalex.org/W2108790707","https://openalex.org/W2119836271","https://openalex.org/W2121520532","https://openalex.org/W2126700722","https://openalex.org/W2139746732","https://openalex.org/W2150526221","https://openalex.org/W2298000651","https://openalex.org/W2477509976","https://openalex.org/W2560892427"],"related_works":["https://openalex.org/W4383652277","https://openalex.org/W2591624843","https://openalex.org/W2103878286","https://openalex.org/W1619670034","https://openalex.org/W2104224956","https://openalex.org/W2004855197","https://openalex.org/W2530714850","https://openalex.org/W1979450039","https://openalex.org/W2007571448","https://openalex.org/W2329094693"],"abstract_inverted_index":{"This":[0],"paper":[1],"proposes":[2],"on-chip":[3],"leakage":[4,16,24,43,49],"monitor":[5,50],"circuit":[6,29,40,51],"to":[7],"scan":[8],"optimal":[9,31],"reversed":[10],"body-biasing":[11],"voltage":[12],"(VBB)":[13],"at":[14],"which":[15],"current":[17,44],"becomes":[18],"minimal":[19],"under":[20],"gate":[21],"induced":[22],"drain":[23],"(GIDL)":[25],"effect.":[26],"The":[27],"proposed":[28],"determines":[30],"VBB":[32,64],"from":[33],"the":[34],"differential":[35],"measurement":[36],"of":[37,63],"two":[38],"replica":[39],"without":[41],"absolute":[42],"measurement.":[45],"We":[46],"fabricated":[47],"this":[48],"in":[52],"a":[53],"45":[54],"nm-CMOS":[55],"process.":[56],"Measurement":[57],"results":[58],"shows":[59],"0.1":[60],"V":[61],"resolution":[62],"optimization.":[65]},"counts_by_year":[{"year":2015,"cited_by_count":2},{"year":2014,"cited_by_count":2},{"year":2012,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}