{"id":"https://openalex.org/W1491078019","doi":"https://doi.org/10.1109/esscirc.2003.1257134","title":"New digital circuit techniques for total standby leakage reduction in nano-scale SOI technology","display_name":"New digital circuit techniques for total standby leakage reduction in nano-scale SOI technology","publication_year":2004,"publication_date":"2004-07-20","ids":{"openalex":"https://openalex.org/W1491078019","doi":"https://doi.org/10.1109/esscirc.2003.1257134","mag":"1491078019"},"language":"en","primary_location":{"id":"doi:10.1109/esscirc.2003.1257134","is_oa":false,"landing_page_url":"https://doi.org/10.1109/esscirc.2003.1257134","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"ESSCIRC 2004 - 29th European Solid-State Circuits Conference (IEEE Cat. No.03EX705)","raw_type":"proceedings-article"},"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5053371036","display_name":"Koushik Das","orcid":"https://orcid.org/0000-0002-1534-5453"},"institutions":[{"id":"https://openalex.org/I27837315","display_name":"University of Michigan","ror":"https://ror.org/00jmfr291","country_code":"US","type":"education","lineage":["https://openalex.org/I27837315"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"K.K. Das","raw_affiliation_strings":["Department of EECS, University of Michigan, Ann Arbor, MI, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of EECS, University of Michigan, Ann Arbor, MI, USA","institution_ids":["https://openalex.org/I27837315"]}]},{"author_position":"middle","author":{"id":null,"display_name":"R.V. Joshi","orcid":null},"institutions":[{"id":"https://openalex.org/I4210114115","display_name":"IBM Research - Thomas J. Watson Research Center","ror":"https://ror.org/0265w5591","country_code":"US","type":"facility","lineage":["https://openalex.org/I1341412227","https://openalex.org/I4210114115"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"R.V. Joshi","raw_affiliation_strings":["IBM Thomas J. Watson Research Center, Yorktown Heights, NY, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IBM Thomas J. Watson Research Center, Yorktown Heights, NY, USA","institution_ids":["https://openalex.org/I4210114115"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5112180178","display_name":"C.T. Chuang","orcid":"https://orcid.org/0000-0001-8795-2394"},"institutions":[{"id":"https://openalex.org/I4210114115","display_name":"IBM Research - Thomas J. Watson Research Center","ror":"https://ror.org/0265w5591","country_code":"US","type":"facility","lineage":["https://openalex.org/I1341412227","https://openalex.org/I4210114115"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"C.T. Chuang","raw_affiliation_strings":["IBM Thomas J. Watson Research Center, Yorktown Heights, NY, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IBM Thomas J. Watson Research Center, Yorktown Heights, NY, USA","institution_ids":["https://openalex.org/I4210114115"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5001758627","display_name":"Peter W. Cook","orcid":"https://orcid.org/0000-0002-2058-5646"},"institutions":[{"id":"https://openalex.org/I4210114115","display_name":"IBM Research - Thomas J. Watson Research Center","ror":"https://ror.org/0265w5591","country_code":"US","type":"facility","lineage":["https://openalex.org/I1341412227","https://openalex.org/I4210114115"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"P.W. Cook","raw_affiliation_strings":["IBM Thomas J. Watson Research Center, Yorktown Heights, NY, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IBM Thomas J. Watson Research Center, Yorktown Heights, NY, USA","institution_ids":["https://openalex.org/I4210114115"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5050281199","display_name":"Richard B. Brown","orcid":"https://orcid.org/0000-0003-2539-2728"},"institutions":[{"id":"https://openalex.org/I27837315","display_name":"University of Michigan","ror":"https://ror.org/00jmfr291","country_code":"US","type":"education","lineage":["https://openalex.org/I27837315"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"R.B. Brown","raw_affiliation_strings":["Department of EECS, University of Michigan, Ann Arbor, MI, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of EECS, University of Michigan, Ann Arbor, MI, USA","institution_ids":["https://openalex.org/I27837315"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":1.6547,"has_fulltext":false,"cited_by_count":5,"citation_normalized_percentile":{"value":0.81081871,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":94},"biblio":{"volume":null,"issue":null,"first_page":"309","last_page":"312"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/standby-power","display_name":"Standby power","score":0.7829893827438354},{"id":"https://openalex.org/keywords/datapath","display_name":"Datapath","score":0.7459143400192261},{"id":"https://openalex.org/keywords/silicon-on-insulator","display_name":"Silicon on insulator","score":0.7145914435386658},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.538771390914917},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.5288777351379395},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.5265836119651794},{"id":"https://openalex.org/keywords/logic-gate","display_name":"Logic gate","score":0.509264349937439},{"id":"https://openalex.org/keywords/leakage","display_name":"Leakage (economics)","score":0.4948810935020447},{"id":"https://openalex.org/keywords/capacitor","display_name":"Capacitor","score":0.4328409731388092},{"id":"https://openalex.org/keywords/dynamic-demand","display_name":"Dynamic demand","score":0.42474237084388733},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.40203532576560974},{"id":"https://openalex.org/keywords/embedded-system","display_name":"Embedded system","score":0.31595873832702637},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.30721837282180786},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.2930305600166321},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.22080445289611816},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.11565250158309937},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.11450549960136414},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.09711199998855591},{"id":"https://openalex.org/keywords/silicon","display_name":"Silicon","score":0.07003587484359741}],"concepts":[{"id":"https://openalex.org/C7140552","wikidata":"https://www.wikidata.org/wiki/Q1366402","display_name":"Standby power","level":3,"score":0.7829893827438354},{"id":"https://openalex.org/C2781198647","wikidata":"https://www.wikidata.org/wiki/Q1633673","display_name":"Datapath","level":2,"score":0.7459143400192261},{"id":"https://openalex.org/C53143962","wikidata":"https://www.wikidata.org/wiki/Q1478788","display_name":"Silicon on insulator","level":3,"score":0.7145914435386658},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.538771390914917},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.5288777351379395},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.5265836119651794},{"id":"https://openalex.org/C131017901","wikidata":"https://www.wikidata.org/wiki/Q170451","display_name":"Logic gate","level":2,"score":0.509264349937439},{"id":"https://openalex.org/C2777042071","wikidata":"https://www.wikidata.org/wiki/Q6509304","display_name":"Leakage (economics)","level":2,"score":0.4948810935020447},{"id":"https://openalex.org/C52192207","wikidata":"https://www.wikidata.org/wiki/Q5322","display_name":"Capacitor","level":3,"score":0.4328409731388092},{"id":"https://openalex.org/C45872418","wikidata":"https://www.wikidata.org/wiki/Q5318966","display_name":"Dynamic demand","level":3,"score":0.42474237084388733},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.40203532576560974},{"id":"https://openalex.org/C149635348","wikidata":"https://www.wikidata.org/wiki/Q193040","display_name":"Embedded system","level":1,"score":0.31595873832702637},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.30721837282180786},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.2930305600166321},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.22080445289611816},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.11565250158309937},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.11450549960136414},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.09711199998855591},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.07003587484359741},{"id":"https://openalex.org/C162324750","wikidata":"https://www.wikidata.org/wiki/Q8134","display_name":"Economics","level":0,"score":0.0},{"id":"https://openalex.org/C139719470","wikidata":"https://www.wikidata.org/wiki/Q39680","display_name":"Macroeconomics","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/esscirc.2003.1257134","is_oa":false,"landing_page_url":"https://doi.org/10.1109/esscirc.2003.1257134","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"ESSCIRC 2004 - 29th European Solid-State Circuits Conference (IEEE Cat. No.03EX705)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7","score":0.6399999856948853}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":9,"referenced_works":["https://openalex.org/W1998466354","https://openalex.org/W2039097694","https://openalex.org/W2098194061","https://openalex.org/W2112752462","https://openalex.org/W2114621701","https://openalex.org/W2144338554","https://openalex.org/W2151276975","https://openalex.org/W4250728653","https://openalex.org/W4251240676"],"related_works":["https://openalex.org/W2109699519","https://openalex.org/W2006568360","https://openalex.org/W102726818","https://openalex.org/W1921751656","https://openalex.org/W3215869375","https://openalex.org/W3135068662","https://openalex.org/W2156767863","https://openalex.org/W3140192626","https://openalex.org/W3037475727","https://openalex.org/W2160304012"],"abstract_inverted_index":{"This":[0],"paper":[1],"proposes":[2],"two":[3],"novel":[4],"circuit":[5,56],"techniques,":[6],"one":[7],"each":[8],"for":[9,14,61,85],"static":[10],"and":[11,18,42,53,73],"dynamic":[12,68],"logic,":[13],"ultra-low":[15],"standby":[16,51],"sub-threshold":[17],"gate":[19],"leakage":[20],"power":[21,49],"in":[22,50,65,89],"future":[23,90],"fully-depleted":[24],"SOI":[25,34,93],"technology.":[26,94],"The":[27],"proposed":[28,67,80],"schemes":[29,81],"make":[30],"intelligent":[31],"use/combination":[32],"of":[33],"dual-V/sub":[35],"TH/":[36],"transistors,":[37],"supplementary":[38],"capacitors,":[39],"forced":[40],"stacking":[41],"V/sub":[43],"TH-/":[44],"wave-pipelining":[45],"techniques":[46],"to":[47],"reduce":[48],"mode":[52],"maintain/improve":[54],"active-mode":[55],"speed.":[57],"An":[58],"analytical":[59],"formula":[60],"optimum":[62],"transistor":[63],"sizing":[64],"the":[66,79],"logic":[69],"scheme":[70],"is":[71,76],"derived":[72],"validated.":[74],"It":[75],"demonstrated":[77],"that":[78],"become":[82],"very":[83],"attractive":[84],"wide":[86],"datapath":[87],"designs":[88],"aggressively":[91],"scaled":[92]},"counts_by_year":[{"year":2013,"cited_by_count":1}],"updated_date":"2026-07-29T14:22:42.915294","created_date":"2025-10-10T00:00:00"}