{"id":"https://openalex.org/W2562342511","doi":"https://doi.org/10.1109/esscirc.2003.1257121","title":"Digital circuit capacitance and switching analysis for ground bounce in ICs with a high-ohmic substrate","display_name":"Digital circuit capacitance and switching analysis for ground bounce in ICs with a high-ohmic substrate","publication_year":2004,"publication_date":"2004-07-20","ids":{"openalex":"https://openalex.org/W2562342511","doi":"https://doi.org/10.1109/esscirc.2003.1257121","mag":"2562342511"},"language":"en","primary_location":{"id":"doi:10.1109/esscirc.2003.1257121","is_oa":false,"landing_page_url":"https://doi.org/10.1109/esscirc.2003.1257121","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"ESSCIRC 2004 - 29th European Solid-State Circuits Conference (IEEE Cat. No.03EX705)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5071608520","display_name":"Mustafa Badaroglu","orcid":"https://orcid.org/0009-0006-0126-9062"},"institutions":[{"id":"https://openalex.org/I99464096","display_name":"KU Leuven","ror":"https://ror.org/05f950310","country_code":"BE","type":"education","lineage":["https://openalex.org/I99464096"]}],"countries":["BE"],"is_corresponding":false,"raw_author_name":"M. Badaroglu","raw_affiliation_strings":["Katholieke Universiteit Leuven, Belgium"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Katholieke Universiteit Leuven, Belgium","institution_ids":["https://openalex.org/I99464096"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5088184974","display_name":"Lakshmanan Balasubramanian","orcid":"https://orcid.org/0000-0002-3883-820X"},"institutions":[{"id":"https://openalex.org/I99464096","display_name":"KU Leuven","ror":"https://ror.org/05f950310","country_code":"BE","type":"education","lineage":["https://openalex.org/I99464096"]}],"countries":["BE"],"is_corresponding":false,"raw_author_name":"L. Balasubramanian","raw_affiliation_strings":["Katholieke Universiteit Leuven, Belgium"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Katholieke Universiteit Leuven, Belgium","institution_ids":["https://openalex.org/I99464096"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5084035144","display_name":"Kris Tiri","orcid":null},"institutions":[{"id":"https://openalex.org/I161318765","display_name":"University of California, Los Angeles","ror":"https://ror.org/046rm7j60","country_code":"US","type":"education","lineage":["https://openalex.org/I161318765"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"K. Tiri","raw_affiliation_strings":["EE Department, University of California, Los Angeles, CA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"EE Department, University of California, Los Angeles, CA, USA","institution_ids":["https://openalex.org/I161318765"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5068229586","display_name":"V. Gravot","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"V. Gravot","raw_affiliation_strings":["MEC, DESICS, Leuven, Belgium"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"MEC, DESICS, Leuven, Belgium","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5059069030","display_name":"Piet Wambacq","orcid":"https://orcid.org/0000-0003-4388-7257"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"P. Wambacq","raw_affiliation_strings":["MEC, DESICS, Leuven, Belgium"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"MEC, DESICS, Leuven, Belgium","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5073931298","display_name":"Geert Van der Plas","orcid":"https://orcid.org/0000-0002-4975-6672"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"G. Van der Plas","raw_affiliation_strings":["MEC, DESICS, Leuven, Belgium"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"MEC, DESICS, Leuven, Belgium","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5109938419","display_name":"S. Donnay","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"S. Donnay","raw_affiliation_strings":["MEC, DESICS, Leuven, Belgium"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"MEC, DESICS, Leuven, Belgium","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5029270525","display_name":"Georges Gielen","orcid":"https://orcid.org/0000-0002-4061-9428"},"institutions":[{"id":"https://openalex.org/I99464096","display_name":"KU Leuven","ror":"https://ror.org/05f950310","country_code":"BE","type":"education","lineage":["https://openalex.org/I99464096"]}],"countries":["BE"],"is_corresponding":false,"raw_author_name":"G. Gielen","raw_affiliation_strings":["ESAT, Katholieke Universiteit Leuven, Belgium"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"ESAT, Katholieke Universiteit Leuven, Belgium","institution_ids":["https://openalex.org/I99464096"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5003860948","display_name":"H. De Man","orcid":"https://orcid.org/0000-0002-5053-2326"},"institutions":[{"id":"https://openalex.org/I99464096","display_name":"KU Leuven","ror":"https://ror.org/05f950310","country_code":"BE","type":"education","lineage":["https://openalex.org/I99464096"]}],"countries":["BE"],"is_corresponding":false,"raw_author_name":"H. De Man","raw_affiliation_strings":["ESAT, Katholieke Universiteit Leuven, Belgium"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"ESAT, Katholieke Universiteit Leuven, Belgium","institution_ids":["https://openalex.org/I99464096"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":9,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":1.6953,"has_fulltext":false,"cited_by_count":8,"citation_normalized_percentile":{"value":0.85400335,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":94},"biblio":{"volume":null,"issue":null,"first_page":"257","last_page":"260"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11444","display_name":"Electromagnetic Compatibility and Noise Suppression","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11444","display_name":"Electromagnetic Compatibility and Noise Suppression","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12495","display_name":"Electrostatic Discharge in Electronics","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.6279984712600708},{"id":"https://openalex.org/keywords/capacitance","display_name":"Capacitance","score":0.6230418682098389},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.5623290538787842},{"id":"https://openalex.org/keywords/ground-bounce","display_name":"Ground bounce","score":0.5590806007385254},{"id":"https://openalex.org/keywords/inductance","display_name":"Inductance","score":0.5203487277030945},{"id":"https://openalex.org/keywords/admittance","display_name":"Admittance","score":0.49475306272506714},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.4810495674610138},{"id":"https://openalex.org/keywords/parasitic-capacitance","display_name":"Parasitic capacitance","score":0.46781301498413086},{"id":"https://openalex.org/keywords/parasitic-extraction","display_name":"Parasitic extraction","score":0.4636842608451843},{"id":"https://openalex.org/keywords/ohmic-contact","display_name":"Ohmic contact","score":0.438017874956131},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.3928055465221405},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.37322795391082764},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.35476940870285034},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.27517765760421753},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.24711275100708008},{"id":"https://openalex.org/keywords/electrical-impedance","display_name":"Electrical impedance","score":0.23149731755256653},{"id":"https://openalex.org/keywords/field-effect-transistor","display_name":"Field-effect transistor","score":0.14834141731262207}],"concepts":[{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.6279984712600708},{"id":"https://openalex.org/C30066665","wikidata":"https://www.wikidata.org/wiki/Q164399","display_name":"Capacitance","level":3,"score":0.6230418682098389},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.5623290538787842},{"id":"https://openalex.org/C179053373","wikidata":"https://www.wikidata.org/wiki/Q1547690","display_name":"Ground bounce","level":5,"score":0.5590806007385254},{"id":"https://openalex.org/C29210110","wikidata":"https://www.wikidata.org/wiki/Q177897","display_name":"Inductance","level":3,"score":0.5203487277030945},{"id":"https://openalex.org/C108811297","wikidata":"https://www.wikidata.org/wiki/Q214518","display_name":"Admittance","level":3,"score":0.49475306272506714},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.4810495674610138},{"id":"https://openalex.org/C154318817","wikidata":"https://www.wikidata.org/wiki/Q2157249","display_name":"Parasitic capacitance","level":4,"score":0.46781301498413086},{"id":"https://openalex.org/C159818811","wikidata":"https://www.wikidata.org/wiki/Q7135947","display_name":"Parasitic extraction","level":2,"score":0.4636842608451843},{"id":"https://openalex.org/C138230450","wikidata":"https://www.wikidata.org/wiki/Q2016597","display_name":"Ohmic contact","level":3,"score":0.438017874956131},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.3928055465221405},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.37322795391082764},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.35476940870285034},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.27517765760421753},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.24711275100708008},{"id":"https://openalex.org/C17829176","wikidata":"https://www.wikidata.org/wiki/Q179043","display_name":"Electrical impedance","level":2,"score":0.23149731755256653},{"id":"https://openalex.org/C145598152","wikidata":"https://www.wikidata.org/wiki/Q176097","display_name":"Field-effect transistor","level":4,"score":0.14834141731262207},{"id":"https://openalex.org/C17525397","wikidata":"https://www.wikidata.org/wiki/Q176140","display_name":"Electrode","level":2,"score":0.0},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/esscirc.2003.1257121","is_oa":false,"landing_page_url":"https://doi.org/10.1109/esscirc.2003.1257121","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"ESSCIRC 2004 - 29th European Solid-State Circuits Conference (IEEE Cat. No.03EX705)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","score":0.47999998927116394,"display_name":"Affordable and clean energy"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":19,"referenced_works":["https://openalex.org/W1480598680","https://openalex.org/W1491885026","https://openalex.org/W1564432903","https://openalex.org/W1884395612","https://openalex.org/W1996718405","https://openalex.org/W2002000718","https://openalex.org/W2057675232","https://openalex.org/W2105047277","https://openalex.org/W2134067926","https://openalex.org/W2149234901","https://openalex.org/W2150860081","https://openalex.org/W2159199312","https://openalex.org/W2161299046","https://openalex.org/W2162116655","https://openalex.org/W2169071786","https://openalex.org/W2171035716","https://openalex.org/W2180333551","https://openalex.org/W2587398465","https://openalex.org/W2788014454"],"related_works":["https://openalex.org/W63447294","https://openalex.org/W1973000679","https://openalex.org/W2068547800","https://openalex.org/W2114312831","https://openalex.org/W3082795214","https://openalex.org/W3215101624","https://openalex.org/W4256385015","https://openalex.org/W2106005208","https://openalex.org/W2022229804","https://openalex.org/W2066648182"],"abstract_inverted_index":{"Ground":[0],"bounce":[1],"is":[2,111],"a":[3,92,97,103],"major":[4],"contributor":[5],"to":[6,11,88,124],"substrate":[7,105],"noise":[8],"generation":[9],"due":[10],"the":[12,16,19,25,31,34,37,41,47,50,54,58,61,65,89,119,122,125],"resonance":[13],"caused":[14],"by":[15],"inductance":[17],"and":[18,36,60,63],"VDD-VSS":[20,51,75],"admittance":[21,52,116],"that":[22,114],"consists":[23],"of":[24,30,49,57,67,77,121],"on-chip":[26],"digital":[27],"circuit":[28,59],"capacitance":[29],"MOS":[32],"transistors,":[33],"decoupling,":[35],"parasitics":[38],"arising":[39],"from":[40],"interconnect.":[42],"This":[43],"paper":[44],"addresses":[45],"(1)":[46],"dependence":[48],"on":[53,91,102,118],"different":[55],"states":[56],"interconnect,":[62],"(2)":[64],"computation":[66],"total":[68],"supply":[69,126],"current":[70],"with":[71,83,106],"ground":[72],"bounce.":[73],"The":[74],"admittances":[76],"several":[78],"test":[79,93],"circuits":[80],"are":[81],"computed":[82],"13%":[84],"maximum":[85],"error":[86],"relative":[87],"measurements":[90],"ASIC":[94],"fabricated":[95],"in":[96],"0.18/spl":[98],"mu/m":[99],"CMOS":[100],"process":[101],"high-ohmic":[104],"18/spl":[107],"Omega/cm":[108],"resistivity.":[109],"It":[110],"also":[112],"shown":[113],"this":[115],"depends":[117],"connectivity":[120,131],"gates":[123],"rail":[127],"rather":[128],"than":[129],"their":[130],"among":[132],"each":[133],"other.":[134]},"counts_by_year":[{"year":2018,"cited_by_count":1}],"updated_date":"2026-06-11T09:08:48.828518","created_date":"2025-10-10T00:00:00"}