{"id":"https://openalex.org/W1577798284","doi":"https://doi.org/10.1109/esscir.2004.1356674","title":"An inductor-based 52-GHz 0.18 \u03bcm SiGe HBT cascode LNA with 22 dB gain","display_name":"An inductor-based 52-GHz 0.18 \u03bcm SiGe HBT cascode LNA with 22 dB gain","publication_year":2004,"publication_date":"2004-11-22","ids":{"openalex":"https://openalex.org/W1577798284","doi":"https://doi.org/10.1109/esscir.2004.1356674","mag":"1577798284"},"language":"en","primary_location":{"id":"doi:10.1109/esscir.2004.1356674","is_oa":false,"landing_page_url":"https://doi.org/10.1109/esscir.2004.1356674","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Proceedings of the 30th European Solid-State Circuits Conference","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5108375122","display_name":"M. Gordon","orcid":null},"institutions":[{"id":"https://openalex.org/I185261750","display_name":"University of Toronto","ror":"https://ror.org/03dbr7087","country_code":"CA","type":"education","lineage":["https://openalex.org/I185261750"]}],"countries":["CA"],"is_corresponding":true,"raw_author_name":"M. Gordon","raw_affiliation_strings":["University of Toronto, Toronto, ONT, Canada","Toronto Univ., Ont., Canada"],"affiliations":[{"raw_affiliation_string":"University of Toronto, Toronto, ONT, Canada","institution_ids":["https://openalex.org/I185261750"]},{"raw_affiliation_string":"Toronto Univ., Ont., Canada","institution_ids":[]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5079412475","display_name":"Sorin P. Voinigescu","orcid":"https://orcid.org/0000-0001-5134-1970"},"institutions":[{"id":"https://openalex.org/I185261750","display_name":"University of Toronto","ror":"https://ror.org/03dbr7087","country_code":"CA","type":"education","lineage":["https://openalex.org/I185261750"]}],"countries":["CA"],"is_corresponding":false,"raw_author_name":"S.P. Voinigescu","raw_affiliation_strings":["University of Toronto, Toronto, ONT, Canada","Toronto Univ., Ont., Canada"],"affiliations":[{"raw_affiliation_string":"University of Toronto, Toronto, ONT, Canada","institution_ids":["https://openalex.org/I185261750"]},{"raw_affiliation_string":"Toronto Univ., Ont., Canada","institution_ids":[]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":["https://openalex.org/A5108375122"],"corresponding_institution_ids":["https://openalex.org/I185261750"],"apc_list":null,"apc_paid":null,"fwci":4.2791,"has_fulltext":false,"cited_by_count":29,"citation_normalized_percentile":{"value":0.93943214,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":89,"max":97},"biblio":{"volume":null,"issue":null,"first_page":"287","last_page":"290"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11417","display_name":"Advancements in PLL and VCO Technologies","score":0.996999979019165,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10299","display_name":"Photonic and Optical Devices","score":0.9968000054359436,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/cascode","display_name":"Cascode","score":0.8378095626831055},{"id":"https://openalex.org/keywords/inductor","display_name":"Inductor","score":0.7831258773803711},{"id":"https://openalex.org/keywords/heterojunction-bipolar-transistor","display_name":"Heterojunction bipolar transistor","score":0.7130016684532166},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.5820755958557129},{"id":"https://openalex.org/keywords/bicmos","display_name":"BiCMOS","score":0.4710749685764313},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.43170279264450073},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.42140230536460876},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.41175034642219543},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.37631553411483765},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.22600063681602478},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.1704522967338562},{"id":"https://openalex.org/keywords/bipolar-junction-transistor","display_name":"Bipolar junction transistor","score":0.12283709645271301}],"concepts":[{"id":"https://openalex.org/C2775946640","wikidata":"https://www.wikidata.org/wiki/Q1735017","display_name":"Cascode","level":4,"score":0.8378095626831055},{"id":"https://openalex.org/C144534570","wikidata":"https://www.wikidata.org/wiki/Q5325","display_name":"Inductor","level":3,"score":0.7831258773803711},{"id":"https://openalex.org/C173408217","wikidata":"https://www.wikidata.org/wiki/Q1428898","display_name":"Heterojunction bipolar transistor","level":5,"score":0.7130016684532166},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.5820755958557129},{"id":"https://openalex.org/C62427370","wikidata":"https://www.wikidata.org/wiki/Q173416","display_name":"BiCMOS","level":4,"score":0.4710749685764313},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.43170279264450073},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.42140230536460876},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.41175034642219543},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.37631553411483765},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.22600063681602478},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.1704522967338562},{"id":"https://openalex.org/C23061349","wikidata":"https://www.wikidata.org/wiki/Q188946","display_name":"Bipolar junction transistor","level":4,"score":0.12283709645271301}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/esscir.2004.1356674","is_oa":false,"landing_page_url":"https://doi.org/10.1109/esscir.2004.1356674","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Proceedings of the 30th European Solid-State Circuits Conference","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7","score":0.8799999952316284}],"awards":[],"funders":[{"id":"https://openalex.org/F4320334593","display_name":"Natural Sciences and Engineering Research Council of Canada","ror":"https://ror.org/01h531d29"}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":7,"referenced_works":["https://openalex.org/W1482286080","https://openalex.org/W1606694637","https://openalex.org/W1975920112","https://openalex.org/W2157754281","https://openalex.org/W2165795923","https://openalex.org/W2170045763","https://openalex.org/W6684754457"],"related_works":["https://openalex.org/W1492027935","https://openalex.org/W2140183546","https://openalex.org/W1971197147","https://openalex.org/W1544173589","https://openalex.org/W2537721720","https://openalex.org/W4387933462","https://openalex.org/W2140681148","https://openalex.org/W1943862574","https://openalex.org/W2154960098","https://openalex.org/W2555993941"],"abstract_inverted_index":{"A":[0],"52-GHz":[1],"two-stage":[2],"cascode":[3],"LNA":[4],"implemented":[5],"in":[6],"a":[7,58],"production":[8],"0.18":[9],"/spl":[10,33,36,43,46],"mu/m":[11,47],"SiGe":[12],"BiCMOS":[13],"process":[14],"is":[15,66],"presented.":[16],"By":[17],"using":[18],"inductors":[19],"rather":[20],"than":[21,68],"transmission":[22],"lines":[23],"for":[24],"matching,":[25],"it":[26],"occupies":[27],"an":[28],"area":[29],"of":[30],"only":[31],"200":[32],"mu/m/spl":[34,44],"times/250":[35],"mu/m.":[37],"The":[38,62,83],"circuit":[39],"features":[40],"standard":[41],"60":[42],"times/60":[45],"bond":[48],"pads,":[49],"on-chip":[50],"bias":[51],"network,":[52],"and":[53,77,93,101],"consumes":[54],"11.4":[55],"mA":[56],"from":[57,71],"3.3":[59],"V":[60,100],"supply.":[61],"measured":[63],"S/sub":[64,78],"11/":[65],"lower":[67],"-12":[69],"dB":[70,88],"35":[72],"GHz":[73,76],"to":[74,98],"65":[75],"21/":[79],"exceeds":[80],"22":[81],"dB.":[82],"gain":[84],"remains":[85],"above":[86],"18":[87],"when":[89],"the":[90],"supply":[91],"voltage":[92],"power":[94],"dissipation":[95],"are":[96],"reduced":[97],"2.5":[99],"19.5":[102],"mW":[103],"respectively.":[104]},"counts_by_year":[{"year":2022,"cited_by_count":1},{"year":2020,"cited_by_count":1},{"year":2019,"cited_by_count":1},{"year":2017,"cited_by_count":1},{"year":2013,"cited_by_count":3},{"year":2012,"cited_by_count":2}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}