{"id":"https://openalex.org/W4385258323","doi":"https://doi.org/10.1109/eit57321.2023.10187322","title":"Engineering the Device Performance of PLD Grown Tantalum Oxide based RRAM Devices","display_name":"Engineering the Device Performance of PLD Grown Tantalum Oxide based RRAM Devices","publication_year":2023,"publication_date":"2023-05-18","ids":{"openalex":"https://openalex.org/W4385258323","doi":"https://doi.org/10.1109/eit57321.2023.10187322"},"language":"en","primary_location":{"id":"doi:10.1109/eit57321.2023.10187322","is_oa":false,"landing_page_url":"https://doi.org/10.1109/eit57321.2023.10187322","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2023 IEEE International Conference on Electro Information Technology (eIT)","raw_type":"proceedings-article"},"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":true,"oa_status":"green","oa_url":"https://www.osti.gov/servlets/purl/1997682","any_repository_has_fulltext":true},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5028010619","display_name":"Alireza Moazzeni","orcid":null},"institutions":[{"id":"https://openalex.org/I185443292","display_name":"Wayne State University","ror":"https://ror.org/01070mq45","country_code":"US","type":"education","lineage":["https://openalex.org/I185443292"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Alireza Moazzeni","raw_affiliation_strings":["Wayne State University,Electrical and Computer Engineering,Detroit,USA","Electrical and Computer Engineering, Wayne State University, Detroit, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Wayne State University,Electrical and Computer Engineering,Detroit,USA","institution_ids":["https://openalex.org/I185443292"]},{"raw_affiliation_string":"Electrical and Computer Engineering, Wayne State University, Detroit, USA","institution_ids":["https://openalex.org/I185443292"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5048816490","display_name":"Md Tawsif Rahman Chowdhury","orcid":"https://orcid.org/0009-0006-3124-5387"},"institutions":[{"id":"https://openalex.org/I185443292","display_name":"Wayne State University","ror":"https://ror.org/01070mq45","country_code":"US","type":"education","lineage":["https://openalex.org/I185443292"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Md Tawsif Rahman Chowdhury","raw_affiliation_strings":["Wayne State University,Electrical and Computer Engineering,Detroit,USA","Electrical and Computer Engineering, Wayne State University, Detroit, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Wayne State University,Electrical and Computer Engineering,Detroit,USA","institution_ids":["https://openalex.org/I185443292"]},{"raw_affiliation_string":"Electrical and Computer Engineering, Wayne State University, Detroit, USA","institution_ids":["https://openalex.org/I185443292"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5011457149","display_name":"Christopher M. Rouleau","orcid":"https://orcid.org/0000-0002-5488-3537"},"institutions":[{"id":"https://openalex.org/I1289243028","display_name":"Oak Ridge National Laboratory","ror":"https://ror.org/01qz5mb56","country_code":"US","type":"facility","lineage":["https://openalex.org/I1289243028","https://openalex.org/I1330989302","https://openalex.org/I39565521","https://openalex.org/I4210159294"]},{"id":"https://openalex.org/I4390039300","display_name":"Center for Nanophase Materials Sciences","ror":"https://ror.org/01wass480","country_code":null,"type":"facility","lineage":["https://openalex.org/I1289243028","https://openalex.org/I1330989302","https://openalex.org/I39565521","https://openalex.org/I4210159294","https://openalex.org/I4390039300"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Christopher Rouleau","raw_affiliation_strings":["The Center for Nanophase Materials Sciences,Oak Ridge National Laboratory,Oak Ridge,USA","Oak Ridge National Laboratory, The Center for Nanophase Materials Sciences, Oak Ridge, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"The Center for Nanophase Materials Sciences,Oak Ridge National Laboratory,Oak Ridge,USA","institution_ids":["https://openalex.org/I1289243028"]},{"raw_affiliation_string":"Oak Ridge National Laboratory, The Center for Nanophase Materials Sciences, Oak Ridge, USA","institution_ids":["https://openalex.org/I1289243028","https://openalex.org/I4390039300"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5038727732","display_name":"G\u00f6zde T\u00fct\u00fcnc\u00fco\u011flu","orcid":"https://orcid.org/0000-0001-8812-5999"},"institutions":[{"id":"https://openalex.org/I185443292","display_name":"Wayne State University","ror":"https://ror.org/01070mq45","country_code":"US","type":"education","lineage":["https://openalex.org/I185443292"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Gozde Tutuncuoglu","raw_affiliation_strings":["Wayne State University,Electrical and Computer Engineering,Detroit,USA","Electrical and Computer Engineering, Wayne State University, Detroit, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Wayne State University,Electrical and Computer Engineering,Detroit,USA","institution_ids":["https://openalex.org/I185443292"]},{"raw_affiliation_string":"Electrical and Computer Engineering, Wayne State University, Detroit, USA","institution_ids":["https://openalex.org/I185443292"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":3,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":2.1635,"has_fulltext":true,"cited_by_count":4,"citation_normalized_percentile":{"value":0.86607804,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":96},"biblio":{"volume":null,"issue":null,"first_page":"505","last_page":"508"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.9977999925613403,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11128","display_name":"Transition Metal Oxide Nanomaterials","score":0.9959999918937683,"subfield":{"id":"https://openalex.org/subfields/2507","display_name":"Polymers and Plastics"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/resistive-random-access-memory","display_name":"Resistive random-access memory","score":0.8752651214599609},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.7086811661720276},{"id":"https://openalex.org/keywords/annealing","display_name":"Annealing (glass)","score":0.6357221603393555},{"id":"https://openalex.org/keywords/crystallization","display_name":"Crystallization","score":0.5279685258865356},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.5052366852760315},{"id":"https://openalex.org/keywords/neuromorphic-engineering","display_name":"Neuromorphic engineering","score":0.49621325731277466},{"id":"https://openalex.org/keywords/pulsed-laser-deposition","display_name":"Pulsed laser deposition","score":0.4302403926849365},{"id":"https://openalex.org/keywords/stoichiometry","display_name":"Stoichiometry","score":0.42085573077201843},{"id":"https://openalex.org/keywords/thin-film","display_name":"Thin film","score":0.4100732207298279},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.38921934366226196},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.27248483896255493},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.23798677325248718},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.19480496644973755},{"id":"https://openalex.org/keywords/chemical-engineering","display_name":"Chemical engineering","score":0.18592235445976257},{"id":"https://openalex.org/keywords/chemistry","display_name":"Chemistry","score":0.12268343567848206},{"id":"https://openalex.org/keywords/artificial-intelligence","display_name":"Artificial intelligence","score":0.11246752738952637},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.0686865746974945}],"concepts":[{"id":"https://openalex.org/C182019814","wikidata":"https://www.wikidata.org/wiki/Q1143830","display_name":"Resistive random-access memory","level":3,"score":0.8752651214599609},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7086811661720276},{"id":"https://openalex.org/C2777855556","wikidata":"https://www.wikidata.org/wiki/Q4339544","display_name":"Annealing (glass)","level":2,"score":0.6357221603393555},{"id":"https://openalex.org/C203036418","wikidata":"https://www.wikidata.org/wiki/Q284256","display_name":"Crystallization","level":2,"score":0.5279685258865356},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5052366852760315},{"id":"https://openalex.org/C151927369","wikidata":"https://www.wikidata.org/wiki/Q1981312","display_name":"Neuromorphic engineering","level":3,"score":0.49621325731277466},{"id":"https://openalex.org/C37982897","wikidata":"https://www.wikidata.org/wiki/Q901321","display_name":"Pulsed laser deposition","level":3,"score":0.4302403926849365},{"id":"https://openalex.org/C144082473","wikidata":"https://www.wikidata.org/wiki/Q213185","display_name":"Stoichiometry","level":2,"score":0.42085573077201843},{"id":"https://openalex.org/C19067145","wikidata":"https://www.wikidata.org/wiki/Q1137203","display_name":"Thin film","level":2,"score":0.4100732207298279},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.38921934366226196},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.27248483896255493},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.23798677325248718},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.19480496644973755},{"id":"https://openalex.org/C42360764","wikidata":"https://www.wikidata.org/wiki/Q83588","display_name":"Chemical engineering","level":1,"score":0.18592235445976257},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.12268343567848206},{"id":"https://openalex.org/C154945302","wikidata":"https://www.wikidata.org/wiki/Q11660","display_name":"Artificial intelligence","level":1,"score":0.11246752738952637},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0686865746974945},{"id":"https://openalex.org/C178790620","wikidata":"https://www.wikidata.org/wiki/Q11351","display_name":"Organic chemistry","level":1,"score":0.0},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.0},{"id":"https://openalex.org/C50644808","wikidata":"https://www.wikidata.org/wiki/Q192776","display_name":"Artificial neural network","level":2,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1109/eit57321.2023.10187322","is_oa":false,"landing_page_url":"https://doi.org/10.1109/eit57321.2023.10187322","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2023 IEEE International Conference on Electro Information Technology (eIT)","raw_type":"proceedings-article"},{"id":"pmh:oai:osti.gov:1997682","is_oa":true,"landing_page_url":"https://www.osti.gov/biblio/1997682","pdf_url":"https://www.osti.gov/servlets/purl/1997682","source":{"id":"https://openalex.org/S4306402487","display_name":"OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I139351228","host_organization_name":"Office of Scientific and Technical Information","host_organization_lineage":["https://openalex.org/I139351228"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":null,"raw_type":null}],"best_oa_location":{"id":"pmh:oai:osti.gov:1997682","is_oa":true,"landing_page_url":"https://www.osti.gov/biblio/1997682","pdf_url":"https://www.osti.gov/servlets/purl/1997682","source":{"id":"https://openalex.org/S4306402487","display_name":"OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I139351228","host_organization_name":"Office of Scientific and Technical Information","host_organization_lineage":["https://openalex.org/I139351228"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":null,"raw_type":null},"sustainable_development_goals":[],"awards":[{"id":"https://openalex.org/G4926101668","display_name":"CRII: FET: 3D Printed Application-Specific Neuromorphic Circuits: Design, Fabrication, and Implementation","funder_award_id":"2153177","funder_id":"https://openalex.org/F4320306076","funder_display_name":"National Science Foundation"}],"funders":[{"id":"https://openalex.org/F4320306076","display_name":"National Science Foundation","ror":"https://ror.org/021nxhr62"},{"id":"https://openalex.org/F4320306084","display_name":"U.S. Department of Energy","ror":"https://ror.org/01bj3aw27"},{"id":"https://openalex.org/F4320316520","display_name":"Keysight Technologies","ror":"https://ror.org/02903cd17"},{"id":"https://openalex.org/F4320332359","display_name":"Office of Science","ror":"https://ror.org/00mmn6b08"},{"id":"https://openalex.org/F4320338287","display_name":"Oak Ridge National Laboratory","ror":"https://ror.org/01qz5mb56"}],"has_content":{"grobid_xml":false,"pdf":true},"content_urls":{"pdf":"https://content.openalex.org/works/W4385258323.pdf"},"referenced_works_count":8,"referenced_works":["https://openalex.org/W2051196419","https://openalex.org/W2329621429","https://openalex.org/W2833268764","https://openalex.org/W2923010225","https://openalex.org/W2987103472","https://openalex.org/W3010339880","https://openalex.org/W4294907969","https://openalex.org/W6662760057"],"related_works":["https://openalex.org/W2986579802","https://openalex.org/W3108691306","https://openalex.org/W4386475142","https://openalex.org/W2793181810","https://openalex.org/W1967489488","https://openalex.org/W2806638311","https://openalex.org/W2891417865","https://openalex.org/W2893723691","https://openalex.org/W2517651798","https://openalex.org/W2785635065"],"abstract_inverted_index":{"Resistive":[0],"Switching":[1],"Random":[2],"Access":[3],"Memory":[4],"(RRAM)":[5],"technology":[6],"is":[7,22,90],"critical":[8],"for":[9,92],"advancing":[10],"beyond":[11],"von":[12],"Neumann":[13],"computing":[14],"applications":[15],"like":[16],"neuromorphic":[17],"computing.":[18],"Enhancing":[19],"RRAM":[20,93,113],"performances":[21],"contingent":[23],"on":[24],"carefully":[25],"controlling":[26],"the":[27,30,44,123,128,131],"properties":[28],"of":[29,46,112,122,130],"switching":[31,84,88],"layer":[32],"material,":[33],"such":[34],"as":[35,74,76,119],"composition,":[36],"stoichiometry,":[37],"and":[38,52,62,71,100,107],"crystal":[39,60],"structure.":[40],"This":[41],"paper":[42],"reports":[43],"use":[45],"a":[47,120],"Pulsed":[48],"Laser":[49],"Deposition":[50],"(PLD)":[51],"post-growth":[53],"annealing":[54,124],"process":[55],"to":[56,82,117],"create$TaO_{x}$films":[57],"with":[58],"different":[59],"structures,":[61],"their":[63],"comprehensive":[64],"characterization,":[65],"including":[66],"structural":[67],"analysis":[68],"using":[69],"XRD":[70],"XPS":[72],"techniques,":[73],"well":[75],"electrical":[77],"characterization":[78],"through":[79],"I-V":[80],"measurements":[81],"assess":[83],"performance.":[85],"Bipolar":[86],"resistive":[87],"dynamics":[89],"demonstrated":[91],"device":[94,110],"stacks":[95],"fabricated":[96],"from":[97],"both":[98],"as-grown":[99],"annealed":[101],"TaOx":[102],"films.":[103],"Additionally,":[104],"electroformation,":[105],"set,":[106],"reset":[108],"voltage":[109],"metrics":[111],"devices":[114],"are":[115],"reported":[116],"increase":[118],"result":[121],"process,":[125],"which":[126],"enhances":[127],"crystallization":[129],"PLD-grown$TaO_{x}$films.":[132]},"counts_by_year":[{"year":2025,"cited_by_count":2},{"year":2024,"cited_by_count":1},{"year":2023,"cited_by_count":1}],"updated_date":"2026-07-29T14:22:42.915294","created_date":"2025-10-10T00:00:00"}