{"id":"https://openalex.org/W1660875314","doi":"https://doi.org/10.1109/eit.2015.7293416","title":"Electrical and thermal analysis of vertical unidirectional 3C-SiC/Si MESFETs on silicon substrate","display_name":"Electrical and thermal analysis of vertical unidirectional 3C-SiC/Si MESFETs on silicon substrate","publication_year":2015,"publication_date":"2015-05-01","ids":{"openalex":"https://openalex.org/W1660875314","doi":"https://doi.org/10.1109/eit.2015.7293416","mag":"1660875314"},"language":"en","primary_location":{"id":"doi:10.1109/eit.2015.7293416","is_oa":false,"landing_page_url":"https://doi.org/10.1109/eit.2015.7293416","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2015 IEEE International Conference on Electro/Information Technology (EIT)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5083772219","display_name":"Ramana Thakkallapally","orcid":null},"institutions":[{"id":"https://openalex.org/I102502594","display_name":"Northern Illinois University","ror":"https://ror.org/012wxa772","country_code":"US","type":"education","lineage":["https://openalex.org/I102502594"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Ramana Thakkallapally","raw_affiliation_strings":["Department of Electrical Engineering, Northern Illinois University, DeKalb, Illinois","Department of Electrical Engineering; Northern Illinois University; DeKalb; Illinois; 60115"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering, Northern Illinois University, DeKalb, Illinois","institution_ids":["https://openalex.org/I102502594"]},{"raw_affiliation_string":"Department of Electrical Engineering; Northern Illinois University; DeKalb; Illinois; 60115","institution_ids":["https://openalex.org/I102502594"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5042480980","display_name":"Vamshi Veesam","orcid":null},"institutions":[{"id":"https://openalex.org/I102502594","display_name":"Northern Illinois University","ror":"https://ror.org/012wxa772","country_code":"US","type":"education","lineage":["https://openalex.org/I102502594"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Vamshi Veesam","raw_affiliation_strings":["Department of Electrical Engineering, Northern Illinois University, DeKalb, Illinois","Department of Electrical Engineering; Northern Illinois University; DeKalb; Illinois; 60115"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering, Northern Illinois University, DeKalb, Illinois","institution_ids":["https://openalex.org/I102502594"]},{"raw_affiliation_string":"Department of Electrical Engineering; Northern Illinois University; DeKalb; Illinois; 60115","institution_ids":["https://openalex.org/I102502594"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5030572986","display_name":"Ibrahim Abdel\u2010Motaleb","orcid":null},"institutions":[{"id":"https://openalex.org/I102502594","display_name":"Northern Illinois University","ror":"https://ror.org/012wxa772","country_code":"US","type":"education","lineage":["https://openalex.org/I102502594"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Ibrahim Abdel-Motaleb","raw_affiliation_strings":["Department of Electrical Engineering, Northern Illinois University, DeKalb, Illinois","Department of Electrical Engineering; Northern Illinois University; DeKalb; Illinois; 60115"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering, Northern Illinois University, DeKalb, Illinois","institution_ids":["https://openalex.org/I102502594"]},{"raw_affiliation_string":"Department of Electrical Engineering; Northern Illinois University; DeKalb; Illinois; 60115","institution_ids":["https://openalex.org/I102502594"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5013766145","display_name":"Z. John Shen","orcid":"https://orcid.org/0000-0002-4679-8180"},"institutions":[{"id":"https://openalex.org/I180949307","display_name":"Illinois Institute of Technology","ror":"https://ror.org/037t3ry66","country_code":"US","type":"education","lineage":["https://openalex.org/I180949307"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Zheng Shen","raw_affiliation_strings":["Department of Electrical Engineering, Illinois Institute of Technology, Chicago, Illinois","Department of Electrical Engineering, Illinois Institute of Technology, Chicago Illinois"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering, Illinois Institute of Technology, Chicago, Illinois","institution_ids":["https://openalex.org/I180949307"]},{"raw_affiliation_string":"Department of Electrical Engineering, Illinois Institute of Technology, Chicago Illinois","institution_ids":["https://openalex.org/I180949307"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":4,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":1,"citation_normalized_percentile":{"value":0.03877996,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":94},"biblio":{"volume":null,"issue":null,"first_page":"676","last_page":"680"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9915000200271606,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12898","display_name":"Induction Heating and Inverter Technology","score":0.9879000186920166,"subfield":{"id":"https://openalex.org/subfields/2210","display_name":"Mechanical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/mesfet","display_name":"MESFET","score":0.9689213037490845},{"id":"https://openalex.org/keywords/multiphysics","display_name":"Multiphysics","score":0.7393193244934082},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.6690373420715332},{"id":"https://openalex.org/keywords/silicon","display_name":"Silicon","score":0.6000418663024902},{"id":"https://openalex.org/keywords/substrate","display_name":"Substrate (aquarium)","score":0.5950146317481995},{"id":"https://openalex.org/keywords/silicon-carbide","display_name":"Silicon carbide","score":0.5941870212554932},{"id":"https://openalex.org/keywords/heat-sink","display_name":"Heat sink","score":0.5671934485435486},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.5577766299247742},{"id":"https://openalex.org/keywords/electric-field","display_name":"Electric field","score":0.5419971942901611},{"id":"https://openalex.org/keywords/thermal","display_name":"Thermal","score":0.5129737257957458},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.5100801587104797},{"id":"https://openalex.org/keywords/breakdown-voltage","display_name":"Breakdown voltage","score":0.5033990740776062},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.4835233688354492},{"id":"https://openalex.org/keywords/thermal-analysis","display_name":"Thermal analysis","score":0.41130805015563965},{"id":"https://openalex.org/keywords/field-effect-transistor","display_name":"Field-effect transistor","score":0.24175378680229187},{"id":"https://openalex.org/keywords/composite-material","display_name":"Composite material","score":0.21424075961112976},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.18445342779159546},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.13343358039855957},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.11853796243667603},{"id":"https://openalex.org/keywords/finite-element-method","display_name":"Finite element method","score":0.09409824013710022},{"id":"https://openalex.org/keywords/thermodynamics","display_name":"Thermodynamics","score":0.08690282702445984},{"id":"https://openalex.org/keywords/structural-engineering","display_name":"Structural engineering","score":0.07421839237213135}],"concepts":[{"id":"https://openalex.org/C134123091","wikidata":"https://www.wikidata.org/wiki/Q1837339","display_name":"MESFET","level":5,"score":0.9689213037490845},{"id":"https://openalex.org/C46435376","wikidata":"https://www.wikidata.org/wiki/Q1829750","display_name":"Multiphysics","level":3,"score":0.7393193244934082},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6690373420715332},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.6000418663024902},{"id":"https://openalex.org/C2777289219","wikidata":"https://www.wikidata.org/wiki/Q7632154","display_name":"Substrate (aquarium)","level":2,"score":0.5950146317481995},{"id":"https://openalex.org/C2780722187","wikidata":"https://www.wikidata.org/wiki/Q412356","display_name":"Silicon carbide","level":2,"score":0.5941870212554932},{"id":"https://openalex.org/C186937647","wikidata":"https://www.wikidata.org/wiki/Q1796959","display_name":"Heat sink","level":2,"score":0.5671934485435486},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5577766299247742},{"id":"https://openalex.org/C60799052","wikidata":"https://www.wikidata.org/wiki/Q46221","display_name":"Electric field","level":2,"score":0.5419971942901611},{"id":"https://openalex.org/C204530211","wikidata":"https://www.wikidata.org/wiki/Q752823","display_name":"Thermal","level":2,"score":0.5129737257957458},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.5100801587104797},{"id":"https://openalex.org/C119321828","wikidata":"https://www.wikidata.org/wiki/Q1267190","display_name":"Breakdown voltage","level":3,"score":0.5033990740776062},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.4835233688354492},{"id":"https://openalex.org/C129446986","wikidata":"https://www.wikidata.org/wiki/Q542419","display_name":"Thermal analysis","level":3,"score":0.41130805015563965},{"id":"https://openalex.org/C145598152","wikidata":"https://www.wikidata.org/wiki/Q176097","display_name":"Field-effect transistor","level":4,"score":0.24175378680229187},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.21424075961112976},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.18445342779159546},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.13343358039855957},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.11853796243667603},{"id":"https://openalex.org/C135628077","wikidata":"https://www.wikidata.org/wiki/Q220184","display_name":"Finite element method","level":2,"score":0.09409824013710022},{"id":"https://openalex.org/C97355855","wikidata":"https://www.wikidata.org/wiki/Q11473","display_name":"Thermodynamics","level":1,"score":0.08690282702445984},{"id":"https://openalex.org/C66938386","wikidata":"https://www.wikidata.org/wiki/Q633538","display_name":"Structural engineering","level":1,"score":0.07421839237213135},{"id":"https://openalex.org/C127313418","wikidata":"https://www.wikidata.org/wiki/Q1069","display_name":"Geology","level":0,"score":0.0},{"id":"https://openalex.org/C111368507","wikidata":"https://www.wikidata.org/wiki/Q43518","display_name":"Oceanography","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/eit.2015.7293416","is_oa":false,"landing_page_url":"https://doi.org/10.1109/eit.2015.7293416","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2015 IEEE International Conference on Electro/Information Technology (EIT)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7","score":0.4000000059604645}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":19,"referenced_works":["https://openalex.org/W1536103754","https://openalex.org/W1572366279","https://openalex.org/W1830316966","https://openalex.org/W2006073629","https://openalex.org/W2008347451","https://openalex.org/W2008924171","https://openalex.org/W2026383379","https://openalex.org/W2062445573","https://openalex.org/W2072956244","https://openalex.org/W2114706647","https://openalex.org/W2188474988","https://openalex.org/W2486637641","https://openalex.org/W2538669306","https://openalex.org/W4285719527","https://openalex.org/W4401878459","https://openalex.org/W6634220751","https://openalex.org/W6638787611","https://openalex.org/W6677583183","https://openalex.org/W6687237795"],"related_works":["https://openalex.org/W2193085994","https://openalex.org/W2084426624","https://openalex.org/W2065685932","https://openalex.org/W3026055904","https://openalex.org/W2005909799","https://openalex.org/W1740462966","https://openalex.org/W2063409976","https://openalex.org/W1992849356","https://openalex.org/W2055212340","https://openalex.org/W2142913603"],"abstract_inverted_index":{"The":[0,11,36,66,101,116,129],"performance":[1],"of":[2,44,63,74],"a":[3,51,71,111],"Unidirectional":[4],"Normally-on":[5],"3C-SiC/Si":[6],"power":[7],"MESFET":[8],"is":[9,47,104],"analyzed.":[10],"electrical":[12,37],"characteristics":[13],"are":[14,27],"simulated":[15],"using":[16,29,106],"the":[17,31,41,55,64,76,81,89,107,124],"industry":[18],"standard":[19],"Silvaco":[20],"Atlas":[21],"simulator.":[22,35],"Thermal":[23,102],"analysis":[24,38,103],"and":[25,88,123],"self-heating":[26,138],"investigated":[28],"COMSOL,":[30],"most":[32],"advanced":[33],"Multiphysics":[34],"shows":[39,68],"that":[40,69,132],"drain":[42,77,117,125],"current":[43,78,118],"this":[45],"device":[46,53],"100%":[48],"higher":[49],"than":[50,61,86],"lateral":[52],"with":[54,114],"same":[56],"dimensions,":[57],"while":[58],"occupying":[59],"less":[60],"33%":[62],"area.":[65],"study":[67],"for":[70],"gate":[72],"voltage":[73,83,126],"0V,":[75],"reaches":[79,84],"600mA/mm;":[80],"breakdown":[82,91],"more":[85],"600V;":[87],"critical":[90],"electric":[92],"field":[93],"increases":[94],"to":[95,137],"3.9\u00d710":[96],"<sup":[97],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[98],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">6</sup>":[99],"V/cm.":[100],"conducted":[105],"Si":[108],"substrate":[109],"as":[110],"heat":[112],"sink,":[113],"T=300K.":[115],"was":[119],"set":[120],"600":[121],"mA/mm":[122],"at":[127],"600V.":[128],"results":[130],"show":[131],"highest":[133],"surface":[134],"temperature":[135],"due":[136],"does":[139],"not":[140],"exceed":[141],"312K.":[142]},"counts_by_year":[{"year":2020,"cited_by_count":1}],"updated_date":"2026-06-11T09:08:48.828518","created_date":"2025-10-10T00:00:00"}