{"id":"https://openalex.org/W2035522091","doi":"https://doi.org/10.1109/eit.2013.6632659","title":"High-efficiency a-Si:H/μc-Si:H solar cells by optimizing A-Si:H and μc-Si:H sub-cells","display_name":"High-efficiency a-Si:H/μc-Si:H solar cells by optimizing A-Si:H and μc-Si:H sub-cells","publication_year":2013,"publication_date":"2013-05-01","ids":{"openalex":"https://openalex.org/W2035522091","doi":"https://doi.org/10.1109/eit.2013.6632659","mag":"2035522091"},"language":"en","primary_location":{"id":"doi:10.1109/eit.2013.6632659","is_oa":false,"landing_page_url":"https://doi.org/10.1109/eit.2013.6632659","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE International Conference on Electro-Information Technology , EIT 2013","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5023512437","display_name":"Guofu Hou","orcid":"https://orcid.org/0000-0003-1607-8470"},"institutions":[{"id":"https://openalex.org/I205237279","display_name":"Nankai University","ror":"https://ror.org/01y1kjr75","country_code":"CN","type":"education","lineage":["https://openalex.org/I205237279"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Guofu Hou","raw_affiliation_strings":["Institute of Photoelectronics, Tianjin Key Laboratory of Photoelectronic Thin Film Devices and Technique, Nankai University, Tianjin, China","Inst. of Photoelectron., Nankai Univ., Tianjin, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Photoelectronics, Tianjin Key Laboratory of Photoelectronic Thin Film Devices and Technique, Nankai University, Tianjin, China","institution_ids":["https://openalex.org/I205237279"]},{"raw_affiliation_string":"Inst. of Photoelectron., Nankai Univ., Tianjin, China","institution_ids":["https://openalex.org/I205237279"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100356750","display_name":"Xiaodan Zhang","orcid":"https://orcid.org/0000-0002-0522-5052"},"institutions":[{"id":"https://openalex.org/I205237279","display_name":"Nankai University","ror":"https://ror.org/01y1kjr75","country_code":"CN","type":"education","lineage":["https://openalex.org/I205237279"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Xiaodan Zhang","raw_affiliation_strings":["Institute of Photoelectronics, Tianjin Key Laboratory of Photoelectronic Thin Film Devices and Technique, Nankai University, Tianjin, China","Inst. of Photoelectron., Nankai Univ., Tianjin, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Photoelectronics, Tianjin Key Laboratory of Photoelectronic Thin Film Devices and Technique, Nankai University, Tianjin, China","institution_ids":["https://openalex.org/I205237279"]},{"raw_affiliation_string":"Inst. of Photoelectron., Nankai Univ., Tianjin, China","institution_ids":["https://openalex.org/I205237279"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5110364703","display_name":"Xiaoyan Han","orcid":null},"institutions":[{"id":"https://openalex.org/I205237279","display_name":"Nankai University","ror":"https://ror.org/01y1kjr75","country_code":"CN","type":"education","lineage":["https://openalex.org/I205237279"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Xiaoyan Han","raw_affiliation_strings":["Institute of Photoelectronics, Tianjin Key Laboratory of Photoelectronic Thin Film Devices and Technique, Nankai University, Tianjin, China","Inst. of Photoelectron., Nankai Univ., Tianjin, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Photoelectronics, Tianjin Key Laboratory of Photoelectronic Thin Film Devices and Technique, Nankai University, Tianjin, China","institution_ids":["https://openalex.org/I205237279"]},{"raw_affiliation_string":"Inst. of Photoelectron., Nankai Univ., Tianjin, China","institution_ids":["https://openalex.org/I205237279"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5027829159","display_name":"Guijun Li","orcid":"https://orcid.org/0000-0001-8330-9692"},"institutions":[{"id":"https://openalex.org/I205237279","display_name":"Nankai University","ror":"https://ror.org/01y1kjr75","country_code":"CN","type":"education","lineage":["https://openalex.org/I205237279"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Guijun Li","raw_affiliation_strings":["Institute of Photoelectronics, Tianjin Key Laboratory of Photoelectronic Thin Film Devices and Technique, Nankai University, Tianjin, China","Inst. of Photoelectron., Nankai Univ., Tianjin, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Photoelectronics, Tianjin Key Laboratory of Photoelectronic Thin Film Devices and Technique, Nankai University, Tianjin, China","institution_ids":["https://openalex.org/I205237279"]},{"raw_affiliation_string":"Inst. of Photoelectron., Nankai Univ., Tianjin, China","institution_ids":["https://openalex.org/I205237279"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5103438661","display_name":"Xinhua Geng","orcid":null},"institutions":[{"id":"https://openalex.org/I205237279","display_name":"Nankai University","ror":"https://ror.org/01y1kjr75","country_code":"CN","type":"education","lineage":["https://openalex.org/I205237279"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Xinhua Geng","raw_affiliation_strings":["Institute of Photoelectronics, Tianjin Key Laboratory of Photoelectronic Thin Film Devices and Technique, Nankai University, Tianjin, China","Inst. of Photoelectron., Nankai Univ., Tianjin, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Photoelectronics, Tianjin Key Laboratory of Photoelectronic Thin Film Devices and Technique, Nankai University, Tianjin, China","institution_ids":["https://openalex.org/I205237279"]},{"raw_affiliation_string":"Inst. of Photoelectron., Nankai Univ., Tianjin, China","institution_ids":["https://openalex.org/I205237279"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101435267","display_name":"Xinliang Chen","orcid":"https://orcid.org/0000-0002-2363-1310"},"institutions":[{"id":"https://openalex.org/I205237279","display_name":"Nankai University","ror":"https://ror.org/01y1kjr75","country_code":"CN","type":"education","lineage":["https://openalex.org/I205237279"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Xinliang Chen","raw_affiliation_strings":["Institute of Photoelectronics, Tianjin Key Laboratory of Photoelectronic Thin Film Devices and Technique, Nankai University, Tianjin, China","Inst. of Photoelectron., Nankai Univ., Tianjin, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Photoelectronics, Tianjin Key Laboratory of Photoelectronic Thin Film Devices and Technique, Nankai University, Tianjin, China","institution_ids":["https://openalex.org/I205237279"]},{"raw_affiliation_string":"Inst. of Photoelectron., Nankai Univ., Tianjin, China","institution_ids":["https://openalex.org/I205237279"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5100434219","display_name":"Ying Zhao","orcid":"https://orcid.org/0000-0002-9478-6635"},"institutions":[{"id":"https://openalex.org/I205237279","display_name":"Nankai University","ror":"https://ror.org/01y1kjr75","country_code":"CN","type":"education","lineage":["https://openalex.org/I205237279"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Ying Zhao","raw_affiliation_strings":["Institute of Photoelectronics, Tianjin Key Laboratory of Photoelectronic Thin Film Devices and Technique, Nankai University, Tianjin, China","Inst. of Photoelectron., Nankai Univ., Tianjin, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Photoelectronics, Tianjin Key Laboratory of Photoelectronic Thin Film Devices and Technique, Nankai University, Tianjin, China","institution_ids":["https://openalex.org/I205237279"]},{"raw_affiliation_string":"Inst. of Photoelectron., Nankai Univ., Tianjin, China","institution_ids":["https://openalex.org/I205237279"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":7,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.09939097,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":"69","issue":null,"first_page":"1","last_page":"6"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10623","display_name":"Thin-Film Transistor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10623","display_name":"Thin-Film Transistor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10624","display_name":"Silicon and Solar Cell Technologies","score":0.9990000128746033,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11169","display_name":"Silicon Nanostructures and Photoluminescence","score":0.996999979019165,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/silicon","display_name":"Silicon","score":0.6325840950012207},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.6177999973297119},{"id":"https://openalex.org/keywords/solar-cell","display_name":"Solar cell","score":0.6176853775978088},{"id":"https://openalex.org/keywords/amorphous-silicon","display_name":"Amorphous silicon","score":0.5993303060531616},{"id":"https://openalex.org/keywords/amorphous-solid","display_name":"Amorphous solid","score":0.5115886330604553},{"id":"https://openalex.org/keywords/silane","display_name":"Silane","score":0.48326021432876587},{"id":"https://openalex.org/keywords/energy-conversion-efficiency","display_name":"Energy conversion efficiency","score":0.44160622358322144},{"id":"https://openalex.org/keywords/analytical-chemistry","display_name":"Analytical Chemistry (journal)","score":0.44088461995124817},{"id":"https://openalex.org/keywords/open-circuit-voltage","display_name":"Open-circuit voltage","score":0.42308834195137024},{"id":"https://openalex.org/keywords/layer","display_name":"Layer (electronics)","score":0.41222789883613586},{"id":"https://openalex.org/keywords/crystalline-silicon","display_name":"Crystalline silicon","score":0.3924412131309509},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.3254167139530182},{"id":"https://openalex.org/keywords/chemical-engineering","display_name":"Chemical engineering","score":0.3215479850769043},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.27666914463043213},{"id":"https://openalex.org/keywords/crystallography","display_name":"Crystallography","score":0.2551611065864563},{"id":"https://openalex.org/keywords/chemistry","display_name":"Chemistry","score":0.22590088844299316},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.16079679131507874},{"id":"https://openalex.org/keywords/composite-material","display_name":"Composite material","score":0.118491530418396},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.1156846284866333},{"id":"https://openalex.org/keywords/organic-chemistry","display_name":"Organic chemistry","score":0.07764273881912231}],"concepts":[{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.6325840950012207},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6177999973297119},{"id":"https://openalex.org/C2780824857","wikidata":"https://www.wikidata.org/wiki/Q58803","display_name":"Solar cell","level":2,"score":0.6176853775978088},{"id":"https://openalex.org/C2776390347","wikidata":"https://www.wikidata.org/wiki/Q474163","display_name":"Amorphous silicon","level":4,"score":0.5993303060531616},{"id":"https://openalex.org/C56052488","wikidata":"https://www.wikidata.org/wiki/Q103382","display_name":"Amorphous solid","level":2,"score":0.5115886330604553},{"id":"https://openalex.org/C2778024649","wikidata":"https://www.wikidata.org/wiki/Q410572","display_name":"Silane","level":2,"score":0.48326021432876587},{"id":"https://openalex.org/C206991015","wikidata":"https://www.wikidata.org/wiki/Q192704","display_name":"Energy conversion efficiency","level":2,"score":0.44160622358322144},{"id":"https://openalex.org/C113196181","wikidata":"https://www.wikidata.org/wiki/Q485223","display_name":"Analytical Chemistry (journal)","level":2,"score":0.44088461995124817},{"id":"https://openalex.org/C57631264","wikidata":"https://www.wikidata.org/wiki/Q1812203","display_name":"Open-circuit voltage","level":3,"score":0.42308834195137024},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.41222789883613586},{"id":"https://openalex.org/C2779667780","wikidata":"https://www.wikidata.org/wiki/Q18206302","display_name":"Crystalline silicon","level":3,"score":0.3924412131309509},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.3254167139530182},{"id":"https://openalex.org/C42360764","wikidata":"https://www.wikidata.org/wiki/Q83588","display_name":"Chemical engineering","level":1,"score":0.3215479850769043},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.27666914463043213},{"id":"https://openalex.org/C8010536","wikidata":"https://www.wikidata.org/wiki/Q160398","display_name":"Crystallography","level":1,"score":0.2551611065864563},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.22590088844299316},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.16079679131507874},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.118491530418396},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.1156846284866333},{"id":"https://openalex.org/C178790620","wikidata":"https://www.wikidata.org/wiki/Q11351","display_name":"Organic chemistry","level":1,"score":0.07764273881912231},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/eit.2013.6632659","is_oa":false,"landing_page_url":"https://doi.org/10.1109/eit.2013.6632659","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE International Conference on Electro-Information Technology , EIT 2013","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","score":0.7099999785423279,"display_name":"Affordable and clean energy"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":23,"referenced_works":["https://openalex.org/W1983035942","https://openalex.org/W1983113035","https://openalex.org/W1992016562","https://openalex.org/W1992274340","https://openalex.org/W1997792579","https://openalex.org/W2003599850","https://openalex.org/W2004062668","https://openalex.org/W2013989481","https://openalex.org/W2025440101","https://openalex.org/W2037147597","https://openalex.org/W2052412325","https://openalex.org/W2061879033","https://openalex.org/W2064379263","https://openalex.org/W2064449404","https://openalex.org/W2069007636","https://openalex.org/W2081065708","https://openalex.org/W2086333336","https://openalex.org/W2090443492","https://openalex.org/W2121272725","https://openalex.org/W2127389572","https://openalex.org/W2131798307","https://openalex.org/W2144130736","https://openalex.org/W2146419711"],"related_works":["https://openalex.org/W1995587412","https://openalex.org/W2026600810","https://openalex.org/W2387318622","https://openalex.org/W1644280946","https://openalex.org/W990521860","https://openalex.org/W2325128805","https://openalex.org/W2035131871","https://openalex.org/W1990859522","https://openalex.org/W2069632257","https://openalex.org/W4390189800"],"abstract_inverted_index":{"The":[0,51,190],"performance":[1],"of":[2,32,71,81,103,192,207,216,241],"a-Si:H/\u03bcc-Si:H":[3,244],"tandem":[4,245],"solar":[5,73,85,223,246],"cell":[6,14,86],"was":[7,75,87,198,218],"improved":[8],"by":[9,124,165,171],"optimizing":[10],"the":[11,21,42,66,90,96,100,104,120,126,148,151,155,167,174,179,183,187,199,208,237],"a-Si:H":[12,22,72,84],"top":[13,23],"and":[15,29,38,129,147],"\u03bcc-Si:H":[16,91,106,145,175,221],"bottom":[17,92],"cell,":[18,24,93],"respectively.":[19],"For":[20,89],"we":[25,94,235],"focused":[26],"on":[27,41,154,203],"opto-electrical":[28],"structural":[30,97,180],"properties":[31],"phosphorous-doped":[33],"hydrogenated":[34],"silicon":[35,58,64],"(Si:H)":[36],"films":[37],"their":[39],"effect":[40],"open":[43],"circuit":[44],"voltage":[45],"(V":[46],"oc":[49,70],").":[50],"experimental":[52],"results":[53],"indicated":[54],"that":[55],"when":[56],"nanosized":[57],"crystalline":[59],"grains":[60],"existed":[61],"in":[62,186,230],"amorphous":[63],"matrix,":[65],"V":[67],"cells":[74],"much":[76],"improved.":[77],"An":[78],"initial":[79,112,135],"efficiency":[80,215,240],"9.4%":[82],"for":[83,143,220,243],"obtained.":[88],"investigated":[95],"evolution":[98,181],"along":[99,182],"growth":[101,184,204],"direction":[102,185],"intrinsic":[105],"layers.":[107],"We":[108,158],"introduced":[109],"a":[110,140,160,226],"high-quality":[111],"seed":[113,136,141],"layer":[114,122,137,142],"at":[115],"p/i":[116,156],"interface":[117],"to":[118,177],"reduce":[119],"incubation":[121],"thickness":[123],"lowering":[125],"silane":[127],"concentration":[128],"very-high-frequency":[130],"(VHF)":[131],"power":[132,162,169,195],"simultaneously.":[133],"This":[134],"acted":[138],"as":[139],"bulk":[144,188],"i-layer":[146],"process":[149],"reduced":[150,200,209],"ion":[152,201],"bombardment":[153],"interface.":[157],"demonstrated":[159],"VHF":[161,168,194,210],"profiling":[163,196],"technique":[164,197],"decreasing":[166],"step":[170,172],"during":[173],"deposition":[176],"control":[178],"i-layer.":[189],"advantage":[191],"this":[193],"bombardments":[202],"surface":[205],"because":[206],"power.":[211],"A":[212],"high":[213],"conversion":[214,239],"9.36%":[217],"obtained":[219],"p-i-n":[222],"cell.":[224],"Using":[225],"double":[227],"n-layer":[228],"(a-Si:H&\u03bcc-Si:H)":[229],"n/p":[231],"tunnel":[232],"recombination":[233],"junction,":[234],"achieved":[236],"best":[238],"11.63%":[242],"cells.":[247]},"counts_by_year":[],"updated_date":"2026-06-11T09:08:48.828518","created_date":"2025-10-10T00:00:00"}