{"id":"https://openalex.org/W1904599568","doi":"https://doi.org/10.1109/ecctd.2015.7300127","title":"A novel forward body biasing technique for subthreshold ring oscillators","display_name":"A novel forward body biasing technique for subthreshold ring oscillators","publication_year":2015,"publication_date":"2015-08-01","ids":{"openalex":"https://openalex.org/W1904599568","doi":"https://doi.org/10.1109/ecctd.2015.7300127","mag":"1904599568"},"language":"en","primary_location":{"id":"doi:10.1109/ecctd.2015.7300127","is_oa":false,"landing_page_url":"https://doi.org/10.1109/ecctd.2015.7300127","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2015 European Conference on Circuit Theory and Design (ECCTD)","raw_type":"proceedings-article"},"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5055346335","display_name":"Yuan Chang","orcid":null},"institutions":[{"id":"https://openalex.org/I9927081","display_name":"Aalto University","ror":"https://ror.org/020hwjq30","country_code":"FI","type":"education","lineage":["https://openalex.org/I9927081"]}],"countries":["FI"],"is_corresponding":false,"raw_author_name":"Yuan Chang","raw_affiliation_strings":["Department of Micro and Nano sciences, Aalto University, Espoo, Finland","Department of Micro and Nano Sciences, SMARAD-II, School of Electrical Engineering, Aalto University, Espoo Finland"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Micro and Nano sciences, Aalto University, Espoo, Finland","institution_ids":["https://openalex.org/I9927081"]},{"raw_affiliation_string":"Department of Micro and Nano Sciences, SMARAD-II, School of Electrical Engineering, Aalto University, Espoo Finland","institution_ids":["https://openalex.org/I9927081"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5048924732","display_name":"Shailesh Singh Chouhan","orcid":"https://orcid.org/0000-0002-6055-3198"},"institutions":[{"id":"https://openalex.org/I9927081","display_name":"Aalto University","ror":"https://ror.org/020hwjq30","country_code":"FI","type":"education","lineage":["https://openalex.org/I9927081"]}],"countries":["FI"],"is_corresponding":false,"raw_author_name":"Shailesh Singh Chouhan","raw_affiliation_strings":["Department of Micro and Nano sciences, Aalto University, Espoo, Finland","Department of Micro and Nano Sciences, SMARAD-II, School of Electrical Engineering, Aalto University, Espoo Finland"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Micro and Nano sciences, Aalto University, Espoo, Finland","institution_ids":["https://openalex.org/I9927081"]},{"raw_affiliation_string":"Department of Micro and Nano Sciences, SMARAD-II, School of Electrical Engineering, Aalto University, Espoo Finland","institution_ids":["https://openalex.org/I9927081"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5066316803","display_name":"K. Halonen","orcid":"https://orcid.org/0000-0002-4385-9689"},"institutions":[{"id":"https://openalex.org/I9927081","display_name":"Aalto University","ror":"https://ror.org/020hwjq30","country_code":"FI","type":"education","lineage":["https://openalex.org/I9927081"]}],"countries":["FI"],"is_corresponding":false,"raw_author_name":"Kari Halonen","raw_affiliation_strings":["Department of Micro and Nano sciences, Aalto University, Espoo, Finland","Department of Micro and Nano Sciences, SMARAD-II, School of Electrical Engineering, Aalto University, Espoo Finland"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Micro and Nano sciences, Aalto University, Espoo, Finland","institution_ids":["https://openalex.org/I9927081"]},{"raw_affiliation_string":"Department of Micro and Nano Sciences, SMARAD-II, School of Electrical Engineering, Aalto University, Espoo Finland","institution_ids":["https://openalex.org/I9927081"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I9927081"],"apc_list":null,"apc_paid":null,"fwci":0.8235,"has_fulltext":false,"cited_by_count":5,"citation_normalized_percentile":{"value":0.65783447,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":94,"max":97},"biblio":{"volume":"1","issue":null,"first_page":"1","last_page":"4"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11417","display_name":"Advancements in PLL and VCO Technologies","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11444","display_name":"Electromagnetic Compatibility and Noise Suppression","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/biasing","display_name":"Biasing","score":0.8832738399505615},{"id":"https://openalex.org/keywords/subthreshold-conduction","display_name":"Subthreshold conduction","score":0.8481528759002686},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.7294493913650513},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.6340265274047852},{"id":"https://openalex.org/keywords/figure-of-merit","display_name":"Figure of merit","score":0.5270795226097107},{"id":"https://openalex.org/keywords/threshold-voltage","display_name":"Threshold voltage","score":0.5191706418991089},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.49775102734565735},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.4895859658718109},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.4879609942436218},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.4618040919303894},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.45015284419059753},{"id":"https://openalex.org/keywords/dissipation","display_name":"Dissipation","score":0.43873730301856995},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.4290342926979065},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.318336546421051},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.2530643343925476},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.22656047344207764}],"concepts":[{"id":"https://openalex.org/C20254490","wikidata":"https://www.wikidata.org/wiki/Q719550","display_name":"Biasing","level":3,"score":0.8832738399505615},{"id":"https://openalex.org/C156465305","wikidata":"https://www.wikidata.org/wiki/Q1658601","display_name":"Subthreshold conduction","level":4,"score":0.8481528759002686},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.7294493913650513},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.6340265274047852},{"id":"https://openalex.org/C130277099","wikidata":"https://www.wikidata.org/wiki/Q3676605","display_name":"Figure of merit","level":2,"score":0.5270795226097107},{"id":"https://openalex.org/C195370968","wikidata":"https://www.wikidata.org/wiki/Q1754002","display_name":"Threshold voltage","level":4,"score":0.5191706418991089},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.49775102734565735},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.4895859658718109},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.4879609942436218},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.4618040919303894},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.45015284419059753},{"id":"https://openalex.org/C135402231","wikidata":"https://www.wikidata.org/wiki/Q898440","display_name":"Dissipation","level":2,"score":0.43873730301856995},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.4290342926979065},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.318336546421051},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.2530643343925476},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.22656047344207764},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C97355855","wikidata":"https://www.wikidata.org/wiki/Q11473","display_name":"Thermodynamics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/ecctd.2015.7300127","is_oa":false,"landing_page_url":"https://doi.org/10.1109/ecctd.2015.7300127","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2015 European Conference on Circuit Theory and Design (ECCTD)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","score":0.7900000214576721,"display_name":"Affordable and clean energy"}],"awards":[],"funders":[{"id":"https://openalex.org/F4320321855","display_name":"Tekes","ror":"https://ror.org/02ag8cq23"}],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":10,"referenced_works":["https://openalex.org/W1974787256","https://openalex.org/W2029526165","https://openalex.org/W2037934508","https://openalex.org/W2106550461","https://openalex.org/W2111798157","https://openalex.org/W2112608475","https://openalex.org/W2115194774","https://openalex.org/W2118129334","https://openalex.org/W2140264092","https://openalex.org/W2157321309"],"related_works":["https://openalex.org/W2545133822","https://openalex.org/W2791897932","https://openalex.org/W2010066109","https://openalex.org/W2009852498","https://openalex.org/W2095374523","https://openalex.org/W2545707786","https://openalex.org/W2340131852","https://openalex.org/W2470478960","https://openalex.org/W1999741645","https://openalex.org/W1991521745"],"abstract_inverted_index":{"In":[0,20,45],"this":[1],"paper,":[2],"a":[3,96,119],"new":[4],"forward":[5,29,40,62,143],"body":[6,30,41,49,63],"biasing":[7,31,42,50,64,144],"scheme":[8,23,145],"is":[9,116,153],"proposed":[10,22,82,142],"for":[11,72],"CMOS":[12,89,100],"inverters":[13],"used":[14,59],"in":[15,65,88,95],"subthreshold":[16,135],"ring":[17],"oscillators":[18],"(ROs).":[19],"the":[21,38,46,66,73,81,84,109,126,138,141],"by":[24,79],"using":[25,80,108,140],"auxiliary":[26],"transistors":[27],"higher":[28],"voltage":[32],"magnitudes":[33],"are":[34,57,70,93,106],"achieved":[35],"compared":[36,156,164],"with":[37,134,157,165],"conventional":[39,85],"(FBB)":[43],"schemes.":[44],"literature":[47],"swapped":[48],"(SBB)":[51],"and":[52,83,161],"dynamic":[53],"threshold":[54],"MOSFET":[55],"(DTMOS)":[56],"conventionaly":[58],"to":[60,124],"obtain":[61],"transistor.":[67],"Three-stage":[68],"ROs":[69],"designed":[71],"target":[74],"frequency":[75],"of":[76,121,128,148],"13.56":[77],"MHz":[78],"FBB":[86],"techniques":[87],"inverters.":[90],"The":[91,113],"architectures":[92],"implemented":[94],"standard":[97],"0.18":[98],"\u03bcm":[99],"technology.":[101],"Post":[102],"layout":[103],"simulations":[104],"(PLS)":[105],"performed":[107],"Cadence":[110],"Spectre":[111],"simulator.":[112],"power":[114,151],"dissipation":[115,152],"selected":[117],"as":[118],"figure":[120],"merit":[122],"(FOM)":[123],"evaluate":[125],"performances":[127],"ROs.":[129],"PLS":[130],"results":[131],"show":[132],"that":[133],"supply":[136],"voltages,":[137],"RO":[139,160],"consumes":[146],"451nW":[147],"power.":[149],"This":[150],"30%":[154],"less":[155,163],"SBB":[158],"based":[159,167],"48%":[162],"DTMOS":[166],"RO.":[168]},"counts_by_year":[{"year":2022,"cited_by_count":3},{"year":2018,"cited_by_count":2}],"updated_date":"2026-07-29T14:22:42.915294","created_date":"2025-10-10T00:00:00"}