{"id":"https://openalex.org/W2081226336","doi":"https://doi.org/10.1109/ecctd.2013.6662269","title":"Analysis of the mutual inductive and capacitive connections and tolerances of memristors parameters of a memristor memory matrix","display_name":"Analysis of the mutual inductive and capacitive connections and tolerances of memristors parameters of a memristor memory matrix","publication_year":2013,"publication_date":"2013-09-01","ids":{"openalex":"https://openalex.org/W2081226336","doi":"https://doi.org/10.1109/ecctd.2013.6662269","mag":"2081226336"},"language":"en","primary_location":{"id":"doi:10.1109/ecctd.2013.6662269","is_oa":false,"landing_page_url":"https://doi.org/10.1109/ecctd.2013.6662269","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2013 European Conference on Circuit Theory and Design (ECCTD)","raw_type":"proceedings-article"},"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5024570324","display_name":"Valeri Mladenov","orcid":"https://orcid.org/0000-0002-6372-8192"},"institutions":[{"id":"https://openalex.org/I58918642","display_name":"Sofia University \"St. Kliment Ohridski\"","ror":"https://ror.org/02jv3k292","country_code":"BG","type":"education","lineage":["https://openalex.org/I58918642"]}],"countries":["BG"],"is_corresponding":false,"raw_author_name":"Valeri Mladenov","raw_affiliation_strings":["Tehnicheski universitet Sofija, Sofia, BG","Dept. of Theor. Electr. Eng., Tech. Univ. of Sofia, Sofia, Bulgaria"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Tehnicheski universitet Sofija, Sofia, BG","institution_ids":[]},{"raw_affiliation_string":"Dept. of Theor. Electr. Eng., Tech. Univ. of Sofia, Sofia, Bulgaria","institution_ids":["https://openalex.org/I58918642"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5069189433","display_name":"Stoyan Kirilov","orcid":"https://orcid.org/0000-0001-5520-6274"},"institutions":[{"id":"https://openalex.org/I58918642","display_name":"Sofia University \"St. Kliment Ohridski\"","ror":"https://ror.org/02jv3k292","country_code":"BG","type":"education","lineage":["https://openalex.org/I58918642"]}],"countries":["BG"],"is_corresponding":false,"raw_author_name":"Stoyan Kirilov","raw_affiliation_strings":["Tehnicheski universitet Sofija, Sofia, BG","Dept. of Theor. Electr. Eng., Tech. Univ. of Sofia, Sofia, Bulgaria"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Tehnicheski universitet Sofija, Sofia, BG","institution_ids":[]},{"raw_affiliation_string":"Dept. of Theor. Electr. Eng., Tech. Univ. of Sofia, Sofia, Bulgaria","institution_ids":["https://openalex.org/I58918642"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I58918642"],"apc_list":null,"apc_paid":null,"fwci":null,"has_fulltext":false,"cited_by_count":21,"citation_normalized_percentile":null,"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"4"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.9955000281333923,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11601","display_name":"Neuroscience and Neural Engineering","score":0.9919000267982483,"subfield":{"id":"https://openalex.org/subfields/2804","display_name":"Cellular and Molecular Neuroscience"},"field":{"id":"https://openalex.org/fields/28","display_name":"Neuroscience"},"domain":{"id":"https://openalex.org/domains/1","display_name":"Life Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/memristor","display_name":"Memristor","score":0.9714934229850769},{"id":"https://openalex.org/keywords/capacitive-sensing","display_name":"Capacitive sensing","score":0.6429385542869568},{"id":"https://openalex.org/keywords/capacitance","display_name":"Capacitance","score":0.6199938058853149},{"id":"https://openalex.org/keywords/parasitic-capacitance","display_name":"Parasitic capacitance","score":0.585844099521637},{"id":"https://openalex.org/keywords/inductance","display_name":"Inductance","score":0.5491044521331787},{"id":"https://openalex.org/keywords/parasitic-extraction","display_name":"Parasitic extraction","score":0.4760746359825134},{"id":"https://openalex.org/keywords/electrical-element","display_name":"Electrical element","score":0.4738079607486725},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.4636937379837036},{"id":"https://openalex.org/keywords/inductive-coupling","display_name":"Inductive coupling","score":0.45807337760925293},{"id":"https://openalex.org/keywords/resistive-random-access-memory","display_name":"Resistive random-access memory","score":0.44437849521636963},{"id":"https://openalex.org/keywords/matrix","display_name":"Matrix (chemical analysis)","score":0.43389081954956055},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.42591628432273865},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.4197652339935303},{"id":"https://openalex.org/keywords/capacitive-coupling","display_name":"Capacitive coupling","score":0.41973528265953064},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.41176143288612366},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.25265443325042725},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.24378308653831482},{"id":"https://openalex.org/keywords/electrode","display_name":"Electrode","score":0.133830726146698}],"concepts":[{"id":"https://openalex.org/C150072547","wikidata":"https://www.wikidata.org/wiki/Q212923","display_name":"Memristor","level":2,"score":0.9714934229850769},{"id":"https://openalex.org/C206755178","wikidata":"https://www.wikidata.org/wiki/Q1131271","display_name":"Capacitive sensing","level":2,"score":0.6429385542869568},{"id":"https://openalex.org/C30066665","wikidata":"https://www.wikidata.org/wiki/Q164399","display_name":"Capacitance","level":3,"score":0.6199938058853149},{"id":"https://openalex.org/C154318817","wikidata":"https://www.wikidata.org/wiki/Q2157249","display_name":"Parasitic capacitance","level":4,"score":0.585844099521637},{"id":"https://openalex.org/C29210110","wikidata":"https://www.wikidata.org/wiki/Q177897","display_name":"Inductance","level":3,"score":0.5491044521331787},{"id":"https://openalex.org/C159818811","wikidata":"https://www.wikidata.org/wiki/Q7135947","display_name":"Parasitic extraction","level":2,"score":0.4760746359825134},{"id":"https://openalex.org/C113089479","wikidata":"https://www.wikidata.org/wiki/Q210729","display_name":"Electrical element","level":2,"score":0.4738079607486725},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.4636937379837036},{"id":"https://openalex.org/C177872590","wikidata":"https://www.wikidata.org/wiki/Q1498289","display_name":"Inductive coupling","level":2,"score":0.45807337760925293},{"id":"https://openalex.org/C182019814","wikidata":"https://www.wikidata.org/wiki/Q1143830","display_name":"Resistive random-access memory","level":3,"score":0.44437849521636963},{"id":"https://openalex.org/C106487976","wikidata":"https://www.wikidata.org/wiki/Q685816","display_name":"Matrix (chemical analysis)","level":2,"score":0.43389081954956055},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.42591628432273865},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.4197652339935303},{"id":"https://openalex.org/C68278764","wikidata":"https://www.wikidata.org/wiki/Q444167","display_name":"Capacitive coupling","level":3,"score":0.41973528265953064},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.41176143288612366},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.25265443325042725},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.24378308653831482},{"id":"https://openalex.org/C17525397","wikidata":"https://www.wikidata.org/wiki/Q176140","display_name":"Electrode","level":2,"score":0.133830726146698},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/ecctd.2013.6662269","is_oa":false,"landing_page_url":"https://doi.org/10.1109/ecctd.2013.6662269","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2013 European Conference on Circuit Theory and Design (ECCTD)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy","score":0.7699999809265137}],"awards":[],"funders":[{"id":"https://openalex.org/F4320329128","display_name":"Technical University of Sofia","ror":"https://ror.org/052prhs50"}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":20,"referenced_works":["https://openalex.org/W1526681974","https://openalex.org/W1547859082","https://openalex.org/W1746055925","https://openalex.org/W1986847848","https://openalex.org/W2018577927","https://openalex.org/W2045009304","https://openalex.org/W2059323493","https://openalex.org/W2112181056","https://openalex.org/W2149380925","https://openalex.org/W2153690880","https://openalex.org/W2158853180","https://openalex.org/W2162151648","https://openalex.org/W2162651880","https://openalex.org/W2182629003","https://openalex.org/W2210471339","https://openalex.org/W3106114372","https://openalex.org/W3186550725","https://openalex.org/W3192731576","https://openalex.org/W6637786566","https://openalex.org/W6697138904"],"related_works":["https://openalex.org/W63447294","https://openalex.org/W1973000679","https://openalex.org/W2068547800","https://openalex.org/W2114312831","https://openalex.org/W3082795214","https://openalex.org/W3215101624","https://openalex.org/W4256385015","https://openalex.org/W2106005208","https://openalex.org/W2898981778","https://openalex.org/W2022229804"],"abstract_inverted_index":{"In":[0],"this":[1],"paper":[2],"the":[3,42,55,59,68,74,82,107,114,125,128,135,144,150,153],"mutual":[4,34,52],"inductive":[5,37],"and":[6,9,36,47,146,152,155],"capacitive":[7,35,147],"connections":[8],"tolerances":[10,126],"of":[11,14,24,28,58,67,70,81,84,127,158],"memristor":[12,16,115,129,160],"parameters":[13,109,130],"a":[15,29,159],"memory":[17,30,60,161],"matrix":[18,31,61,162],"are":[19,49,62,76,163],"investigated.":[20],"An":[21],"equivalent":[22],"circuit":[23,83,136],"three":[25,85],"neighboring":[26,86],"memristors":[27,75,87,151],"with":[32,97,143],"complicated":[33],"connection":[38],"is":[39,88,92,105],"presented.":[40],"Then":[41],"memristor's":[43],"own":[44],"parasitic":[45,108,156],"capacitance":[46],"inductance":[48],"described.":[50],"The":[51,90,102],"capacitances":[53],"between":[54,73,149],"platinum":[56],"rims":[57],"calculated.":[63],"Two":[64],"possible":[65],"values":[66],"coefficient":[69],"magnetic":[71,145],"coupling":[72],"used.":[77],"A":[78],"SIMULINK":[79],"model":[80],"developed.":[89],"simulation":[91],"made":[93],"at":[94,118],"pulse":[95],"mode":[96],"3":[98,122],"GHz":[99],"actuating":[100],"voltages.":[101],"main":[103],"result":[104],"that":[106],"do":[110],"not":[111],"strongly":[112],"affect":[113],"voltage":[116],"drops":[117],"frequencies":[119],"up":[120],"to":[121],"GHz.":[123],"However":[124],"have":[131],"stronger":[132],"effect":[133],"on":[134],"characteristics.":[137],"Finally,":[138],"some":[139],"concluding":[140],"remarks":[141],"associated":[142],"influence":[148],"leakage":[154],"resistances":[157],"given.":[164]},"counts_by_year":[{"year":2025,"cited_by_count":3},{"year":2024,"cited_by_count":5},{"year":2023,"cited_by_count":5},{"year":2022,"cited_by_count":1},{"year":2018,"cited_by_count":3},{"year":2017,"cited_by_count":1},{"year":2016,"cited_by_count":2},{"year":2015,"cited_by_count":1}],"updated_date":"2026-07-15T18:14:33.161393","created_date":"2025-10-10T00:00:00"}