{"id":"https://openalex.org/W1516507427","doi":"https://doi.org/10.1109/ecctd.2005.1522958","title":"Metamorphic HEMT amplifier for K- and Ka-band applications","display_name":"Metamorphic HEMT amplifier for K- and Ka-band applications","publication_year":2006,"publication_date":"2006-10-11","ids":{"openalex":"https://openalex.org/W1516507427","doi":"https://doi.org/10.1109/ecctd.2005.1522958","mag":"1516507427"},"language":"en","primary_location":{"id":"doi:10.1109/ecctd.2005.1522958","is_oa":false,"landing_page_url":"https://doi.org/10.1109/ecctd.2005.1522958","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Proceedings of the 2005 European Conference on Circuit Theory and Design, 2005.","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5003332048","display_name":"Mikko Varonen","orcid":"https://orcid.org/0000-0002-6515-5092"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"M. Varonen","raw_affiliation_strings":["Electronic Circuit Design Laboratory, Helsinki University of Technology, Espoo, Finland","Lab. for Electron. Circuit Design, Helsinki Univ. of Technol., Espoo, Finland"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Electronic Circuit Design Laboratory, Helsinki University of Technology, Espoo, Finland","institution_ids":[]},{"raw_affiliation_string":"Lab. for Electron. Circuit Design, Helsinki Univ. of Technol., Espoo, Finland","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5111498167","display_name":"M. K\u00e4rkk\u00e4inen","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"M. Karkkainen","raw_affiliation_strings":["Electronic Circuit Design Laboratory, Helsinki University of Technology, Espoo, Finland","Lab. for Electron. Circuit Design, Helsinki Univ. of Technol., Espoo, Finland"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Electronic Circuit Design Laboratory, Helsinki University of Technology, Espoo, Finland","institution_ids":[]},{"raw_affiliation_string":"Lab. for Electron. Circuit Design, Helsinki Univ. of Technol., Espoo, Finland","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5112228194","display_name":"Pekka Kangaslahti","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"P. Kangaslahti","raw_affiliation_strings":["Electronic Circuit Design Laboratory, Helsinki University of Technology, Espoo, Finland","Lab. for Electron. Circuit Design, Helsinki Univ. of Technol., Espoo, Finland"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Electronic Circuit Design Laboratory, Helsinki University of Technology, Espoo, Finland","institution_ids":[]},{"raw_affiliation_string":"Lab. for Electron. Circuit Design, Helsinki Univ. of Technol., Espoo, Finland","institution_ids":[]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5066316803","display_name":"K. Halonen","orcid":"https://orcid.org/0000-0002-4385-9689"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"K. Halonen","raw_affiliation_strings":["Electronic Circuit Design Laboratory, Helsinki University of Technology, Espoo, Finland","Lab. for Electron. Circuit Design, Helsinki Univ. of Technol., Espoo, Finland"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Electronic Circuit Design Laboratory, Helsinki University of Technology, Espoo, Finland","institution_ids":[]},{"raw_affiliation_string":"Lab. for Electron. Circuit Design, Helsinki Univ. of Technol., Espoo, Finland","institution_ids":[]}]}],"institutions":[],"countries_distinct_count":0,"institutions_distinct_count":4,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":1,"citation_normalized_percentile":{"value":0.03937357,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":"1","issue":null,"first_page":"253","last_page":"256"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10022","display_name":"Semiconductor Quantum Structures and Devices","score":0.9983000159263611,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10022","display_name":"Semiconductor Quantum Structures and Devices","score":0.9983000159263611,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":0.9965999722480774,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11429","display_name":"Semiconductor Lasers and Optical Devices","score":0.9900000095367432,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/amplifier","display_name":"Amplifier","score":0.7583538293838501},{"id":"https://openalex.org/keywords/high-electron-mobility-transistor","display_name":"High-electron-mobility transistor","score":0.627823531627655},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.5638397932052612},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.5413718819618225},{"id":"https://openalex.org/keywords/ka-band","display_name":"Ka band","score":0.5329523682594299},{"id":"https://openalex.org/keywords/chip","display_name":"Chip","score":0.5032564997673035},{"id":"https://openalex.org/keywords/g-band","display_name":"G band","score":0.47109705209732056},{"id":"https://openalex.org/keywords/w-band","display_name":"W band","score":0.46672478318214417},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.4655519127845764},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.2973599433898926},{"id":"https://openalex.org/keywords/optics","display_name":"Optics","score":0.28212881088256836},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.23184123635292053},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.19540762901306152},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.19438663125038147},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.13596895337104797}],"concepts":[{"id":"https://openalex.org/C194257627","wikidata":"https://www.wikidata.org/wiki/Q211554","display_name":"Amplifier","level":3,"score":0.7583538293838501},{"id":"https://openalex.org/C162057924","wikidata":"https://www.wikidata.org/wiki/Q1617706","display_name":"High-electron-mobility transistor","level":4,"score":0.627823531627655},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5638397932052612},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5413718819618225},{"id":"https://openalex.org/C2777720951","wikidata":"https://www.wikidata.org/wiki/Q967772","display_name":"Ka band","level":2,"score":0.5329523682594299},{"id":"https://openalex.org/C165005293","wikidata":"https://www.wikidata.org/wiki/Q1074500","display_name":"Chip","level":2,"score":0.5032564997673035},{"id":"https://openalex.org/C183093025","wikidata":"https://www.wikidata.org/wiki/Q5515158","display_name":"G band","level":3,"score":0.47109705209732056},{"id":"https://openalex.org/C2781183794","wikidata":"https://www.wikidata.org/wiki/Q3772984","display_name":"W band","level":2,"score":0.46672478318214417},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.4655519127845764},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.2973599433898926},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.28212881088256836},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.23184123635292053},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.19540762901306152},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.19438663125038147},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.13596895337104797},{"id":"https://openalex.org/C40003534","wikidata":"https://www.wikidata.org/wiki/Q862228","display_name":"Raman spectroscopy","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/ecctd.2005.1522958","is_oa":false,"landing_page_url":"https://doi.org/10.1109/ecctd.2005.1522958","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Proceedings of the 2005 European Conference on Circuit Theory and Design, 2005.","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","score":0.8199999928474426,"id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[{"id":"https://openalex.org/F4320321108","display_name":"Academy of Finland","ror":"https://ror.org/05k73zm37"}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":5,"referenced_works":["https://openalex.org/W1481672268","https://openalex.org/W1598164440","https://openalex.org/W1906986766","https://openalex.org/W2077970411","https://openalex.org/W2127229467"],"related_works":["https://openalex.org/W2167356313","https://openalex.org/W4367148193","https://openalex.org/W2105345038","https://openalex.org/W1516740165","https://openalex.org/W2010276823","https://openalex.org/W2154381196","https://openalex.org/W2535193769","https://openalex.org/W2810442918","https://openalex.org/W2087692852","https://openalex.org/W2592044733"],"abstract_inverted_index":{"This":[0],"paper":[1],"presents":[2],"an":[3],"integrated":[4],"high":[5],"gain":[6,56,73],"two-stage":[7],"amplifier":[8,70,116],"covering":[9],"frequency":[10],"range":[11],"from":[12,123],"18":[13],"GHz":[14],"to":[15,118,125],"40":[16],"GHz.":[17],"The":[18,84,127],"chip":[19,36,124],"was":[20],"manufactured":[21],"using":[22,105],"a":[23,52,71,106,130],"commercially":[24],"available":[25],"0.15":[26],"/spl":[27,41,76],"mu/m":[28],"GaAs":[29],"based":[30],"metamorphic":[31],"HEMT":[32],"technology":[33],"and":[34,54,58,82,98],"the":[35,61,69,120],"size":[37],"is":[38,48,91],"2.1":[39],"mm":[40],"times/":[42],"1.1":[43],"mm.":[44],"Parallel":[45],"resistive":[46],"feedback":[47],"used":[49],"for":[50,59,68],"obtaining":[51],"broadband":[53],"flat":[55],"response":[57],"stabilizing":[60],"amplifier.":[62],"We":[63],"measured":[64,85,114],"in":[65,136],"on-wafer":[66],"tests":[67],"small-signal":[72,137],"of":[74,132],"22.5":[75],"plusmn/":[77],"2.5":[78,108],"dB":[79,87,134],"at":[80,96,103],"K-":[81],"Ka-bands.":[83],"1":[86],"output":[88],"compression":[89],"point":[90],"better":[92,99],"than":[93,100],"+13":[94],"dBm":[95,102],"K-band":[97],"+9.5":[101],"Ka-band":[104],"low":[107],"volts":[109],"supply.":[110],"In":[111],"addition,":[112],"we":[113],"10":[115],"chips":[117],"verify":[119],"performance":[121],"variation":[122],"chip.":[126],"measurements":[128],"showed":[129],"maximum":[131],"2":[133],"deviation":[135],"gain.":[138]},"counts_by_year":[],"updated_date":"2026-06-11T09:08:48.828518","created_date":"2025-10-10T00:00:00"}