{"id":"https://openalex.org/W4401071120","doi":"https://doi.org/10.1109/drc61706.2024.10605454","title":"Optimizing TiTe<sub>2</sub>/Ge<sub>4</sub>Sb<sub>6</sub>Te<sub>7</sub> Superlattices Towards Low-Power, Fast-Speed, and High-Stability Phase Change Memory","display_name":"Optimizing TiTe<sub>2</sub>/Ge<sub>4</sub>Sb<sub>6</sub>Te<sub>7</sub> Superlattices Towards Low-Power, Fast-Speed, and High-Stability Phase Change Memory","publication_year":2024,"publication_date":"2024-06-24","ids":{"openalex":"https://openalex.org/W4401071120","doi":"https://doi.org/10.1109/drc61706.2024.10605454"},"language":"en","primary_location":{"id":"doi:10.1109/drc61706.2024.10605454","is_oa":false,"landing_page_url":"http://dx.doi.org/10.1109/drc61706.2024.10605454","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2024 Device Research Conference (DRC)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5035168657","display_name":"Xiangjin Wu","orcid":"https://orcid.org/0000-0001-8155-1282"},"institutions":[{"id":"https://openalex.org/I97018004","display_name":"Stanford University","ror":"https://ror.org/00f54p054","country_code":"US","type":"education","lineage":["https://openalex.org/I97018004"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"Xiangjin Wu","raw_affiliation_strings":["Stanford University,Electrical Engineering,Stanford,CA,USA"],"affiliations":[{"raw_affiliation_string":"Stanford University,Electrical Engineering,Stanford,CA,USA","institution_ids":["https://openalex.org/I97018004"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5016699271","display_name":"Asir Intisar Khan","orcid":"https://orcid.org/0000-0003-4635-4667"},"institutions":[{"id":"https://openalex.org/I97018004","display_name":"Stanford University","ror":"https://ror.org/00f54p054","country_code":"US","type":"education","lineage":["https://openalex.org/I97018004"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Asir Intisar Khan","raw_affiliation_strings":["Stanford University,Electrical Engineering,Stanford,CA,USA"],"affiliations":[{"raw_affiliation_string":"Stanford University,Electrical Engineering,Stanford,CA,USA","institution_ids":["https://openalex.org/I97018004"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5112277313","display_name":"H.-S. Philip Wong","orcid":null},"institutions":[{"id":"https://openalex.org/I97018004","display_name":"Stanford University","ror":"https://ror.org/00f54p054","country_code":"US","type":"education","lineage":["https://openalex.org/I97018004"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"H.-S. Philip Wong","raw_affiliation_strings":["Stanford University,Electrical Engineering,Stanford,CA,USA"],"affiliations":[{"raw_affiliation_string":"Stanford University,Electrical Engineering,Stanford,CA,USA","institution_ids":["https://openalex.org/I97018004"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5051662579","display_name":"Eric Pop","orcid":"https://orcid.org/0000-0003-0436-8534"},"institutions":[{"id":"https://openalex.org/I97018004","display_name":"Stanford University","ror":"https://ror.org/00f54p054","country_code":"US","type":"education","lineage":["https://openalex.org/I97018004"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Eric Pop","raw_affiliation_strings":["Stanford University,Electrical Engineering,Stanford,CA,USA"],"affiliations":[{"raw_affiliation_string":"Stanford University,Electrical Engineering,Stanford,CA,USA","institution_ids":["https://openalex.org/I97018004"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":4,"corresponding_author_ids":["https://openalex.org/A5035168657"],"corresponding_institution_ids":["https://openalex.org/I97018004"],"apc_list":null,"apc_paid":null,"fwci":0.1264,"has_fulltext":false,"cited_by_count":1,"citation_normalized_percentile":{"value":0.39921987,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":91,"max":95},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"2"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11315","display_name":"Phase-change materials and chalcogenides","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11315","display_name":"Phase-change materials and chalcogenides","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10590","display_name":"Chalcogenide Semiconductor Thin Films","score":0.9976000189781189,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11025","display_name":"Nonlinear Optical Materials Research","score":0.9896000027656555,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.6606343388557434},{"id":"https://openalex.org/keywords/superlattice","display_name":"Superlattice","score":0.6596466898918152},{"id":"https://openalex.org/keywords/germanium-compounds","display_name":"Germanium compounds","score":0.5112199783325195},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.4881490170955658},{"id":"https://openalex.org/keywords/phase-change-memory","display_name":"Phase-change memory","score":0.43968626856803894},{"id":"https://openalex.org/keywords/zinc-compounds","display_name":"Zinc compounds","score":0.41711103916168213},{"id":"https://openalex.org/keywords/germanium","display_name":"Germanium","score":0.3406601846218109},{"id":"https://openalex.org/keywords/analytical-chemistry","display_name":"Analytical Chemistry (journal)","score":0.34026461839675903},{"id":"https://openalex.org/keywords/chemistry","display_name":"Chemistry","score":0.2237071394920349},{"id":"https://openalex.org/keywords/metallurgy","display_name":"Metallurgy","score":0.15794476866722107},{"id":"https://openalex.org/keywords/silicon","display_name":"Silicon","score":0.14703220129013062},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.10845032334327698},{"id":"https://openalex.org/keywords/zinc","display_name":"Zinc","score":0.09975171089172363}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6606343388557434},{"id":"https://openalex.org/C105382558","wikidata":"https://www.wikidata.org/wiki/Q332431","display_name":"Superlattice","level":2,"score":0.6596466898918152},{"id":"https://openalex.org/C2909614401","wikidata":"https://www.wikidata.org/wiki/Q867","display_name":"Germanium compounds","level":4,"score":0.5112199783325195},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.4881490170955658},{"id":"https://openalex.org/C64142963","wikidata":"https://www.wikidata.org/wiki/Q1153902","display_name":"Phase-change memory","level":3,"score":0.43968626856803894},{"id":"https://openalex.org/C2911124769","wikidata":"https://www.wikidata.org/wiki/Q10749005","display_name":"Zinc compounds","level":3,"score":0.41711103916168213},{"id":"https://openalex.org/C550623735","wikidata":"https://www.wikidata.org/wiki/Q867","display_name":"Germanium","level":3,"score":0.3406601846218109},{"id":"https://openalex.org/C113196181","wikidata":"https://www.wikidata.org/wiki/Q485223","display_name":"Analytical Chemistry (journal)","level":2,"score":0.34026461839675903},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.2237071394920349},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.15794476866722107},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.14703220129013062},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.10845032334327698},{"id":"https://openalex.org/C535196362","wikidata":"https://www.wikidata.org/wiki/Q758","display_name":"Zinc","level":2,"score":0.09975171089172363},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0},{"id":"https://openalex.org/C43617362","wikidata":"https://www.wikidata.org/wiki/Q170050","display_name":"Chromatography","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/drc61706.2024.10605454","is_oa":false,"landing_page_url":"http://dx.doi.org/10.1109/drc61706.2024.10605454","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2024 Device Research Conference (DRC)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy","score":0.7599999904632568}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":10,"referenced_works":["https://openalex.org/W2484278729","https://openalex.org/W2890917406","https://openalex.org/W2909452884","https://openalex.org/W3197551171","https://openalex.org/W3201969459","https://openalex.org/W3203199432","https://openalex.org/W4206540931","https://openalex.org/W4237331446","https://openalex.org/W4318755168","https://openalex.org/W4391110694"],"related_works":["https://openalex.org/W2314132325","https://openalex.org/W1977207054","https://openalex.org/W4246170426","https://openalex.org/W1985384588","https://openalex.org/W1805831116","https://openalex.org/W4237953932","https://openalex.org/W581783877","https://openalex.org/W3102980817","https://openalex.org/W1483189535","https://openalex.org/W3030023673"],"abstract_inverted_index":{"Phase":[0],"change":[1,27],"memory":[2],"(PCM)":[3],"is":[4],"a":[5],"promising":[6],"technology":[7],"for":[8,32,96],"neuromorphic":[9],"computing":[10],"and":[11,36,50,64,93,117,148],"data":[12],"storage":[13],"[":[14],"1":[15],"\u2013":[16],"3":[17],"]":[18],".":[19,43],"Recently,":[20],"superlattice":[21,90],"(SL)":[22],"PCM":[23,68,126],"with":[24,81,124],"ultrathin":[25],"phase":[26],"layers":[28],"has":[29],"shown":[30],"promise":[31],"low":[33,37,142],"switching":[34,105,109,143],"power":[35],"resistance":[38,113],"drift":[39],"[3":[40],",":[41],"4]":[42],"However,":[44],"the":[45,89,97,138],"programming":[46,61],"speed,":[47,147],"thermal":[48,150],"stability,":[49],"their":[51],"tradeoffs":[52,59],"remain":[53],"under-explored.":[54],"Here,":[55],"we":[56,100],"examine":[57],"such":[58],"between":[60],"voltage,":[62],"speed":[63],"high-temperature":[65],"retention":[66,119],"in":[67],"devices":[69],"based":[70],"on":[71],"TiTe":[72,129],"2":[73,130],"/Ge":[74,131],"4":[75,132],"Sb":[76,133],"6":[77,134],"Te":[78,135],"7":[79,136],"superlattices,":[80],"40":[82,107],"nm":[83],"bottom":[84],"electrode":[85],"diameter.":[86],"By":[87],"optimizing":[88],"deposition":[91],"conditions":[92],"layer":[94],"thickness,":[95],"first":[98],"time":[99],"simultaneously":[101],"achieve":[102],"sub-200":[103],"\u03bcA":[104],"current,":[106],"ns":[108],"time,":[110],"good":[111,139],"on/off":[112],"ratio":[114],"(>":[115],"100x),":[116],"10-year":[118],"at":[120,137],"120":[121],"\u00b0C.":[122],"Benchmarking":[123],"other":[125],"technologies":[127],"places":[128],"corner":[140],"of":[141],"power,":[144],"fast":[145],"operation":[146],"robust":[149],"stability.":[151]},"counts_by_year":[{"year":2025,"cited_by_count":1}],"updated_date":"2026-01-13T01:12:25.745995","created_date":"2025-10-10T00:00:00"}