{"id":"https://openalex.org/W4401071738","doi":"https://doi.org/10.1109/drc61706.2024.10605412","title":"Investigation on Positive Bias-Induced Threshold Voltage Instability in GaN-on-Si D-mode Power MIS-HEMTs","display_name":"Investigation on Positive Bias-Induced Threshold Voltage Instability in GaN-on-Si D-mode Power MIS-HEMTs","publication_year":2024,"publication_date":"2024-06-24","ids":{"openalex":"https://openalex.org/W4401071738","doi":"https://doi.org/10.1109/drc61706.2024.10605412"},"language":"en","primary_location":{"id":"doi:10.1109/drc61706.2024.10605412","is_oa":false,"landing_page_url":"http://dx.doi.org/10.1109/drc61706.2024.10605412","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2024 Device Research Conference (DRC)","raw_type":"proceedings-article"},"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5044796283","display_name":"Shivendra K. Rathaur","orcid":"https://orcid.org/0000-0001-6847-8092"},"institutions":[{"id":"https://openalex.org/I68891433","display_name":"Indian Institute of Technology Delhi","ror":"https://ror.org/049tgcd06","country_code":"IN","type":"education","lineage":["https://openalex.org/I68891433"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"Shivendra K. Rathaur","raw_affiliation_strings":["New Delhi,Indian Institute of Technology Delhi (IITD),Department of Electrical Engineering,India,110016"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"New Delhi,Indian Institute of Technology Delhi (IITD),Department of Electrical Engineering,India,110016","institution_ids":["https://openalex.org/I68891433"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5013764652","display_name":"Abhisek Dixit","orcid":"https://orcid.org/0000-0002-2244-1697"},"institutions":[{"id":"https://openalex.org/I68891433","display_name":"Indian Institute of Technology Delhi","ror":"https://ror.org/049tgcd06","country_code":"IN","type":"education","lineage":["https://openalex.org/I68891433"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"Abhisek Dixit","raw_affiliation_strings":["New Delhi,Indian Institute of Technology Delhi (IITD),Department of Electrical Engineering,India,110016"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"New Delhi,Indian Institute of Technology Delhi (IITD),Department of Electrical Engineering,India,110016","institution_ids":["https://openalex.org/I68891433"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5013545831","display_name":"Edward Yi Chang","orcid":"https://orcid.org/0000-0003-1616-5240"},"institutions":[{"id":"https://openalex.org/I148366613","display_name":"National Yang Ming Chiao Tung University","ror":"https://ror.org/00se2k293","country_code":"TW","type":"education","lineage":["https://openalex.org/I148366613"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Edward Yi Chang","raw_affiliation_strings":["Hsinchu,National Yang-Ming Chiao Tung University,International College of Semiconductor Technology,Taiwan,30010"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Hsinchu,National Yang-Ming Chiao Tung University,International College of Semiconductor Technology,Taiwan,30010","institution_ids":["https://openalex.org/I148366613"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":2,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.10287356,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"2"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9984999895095825,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.6725825071334839},{"id":"https://openalex.org/keywords/threshold-voltage","display_name":"Threshold voltage","score":0.642086923122406},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.6341371536254883},{"id":"https://openalex.org/keywords/wide-bandgap-semiconductor","display_name":"Wide-bandgap semiconductor","score":0.6089413166046143},{"id":"https://openalex.org/keywords/mode","display_name":"Mode (computer interface)","score":0.5505080223083496},{"id":"https://openalex.org/keywords/instability","display_name":"Instability","score":0.5297656655311584},{"id":"https://openalex.org/keywords/gallium-nitride","display_name":"Gallium nitride","score":0.5275135636329651},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.5227711200714111},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.49413159489631653},{"id":"https://openalex.org/keywords/biasing","display_name":"Biasing","score":0.4448344111442566},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.3066714406013489},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.22016015648841858},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.21289372444152832},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.1842963695526123},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.12462681531906128},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.10276871919631958},{"id":"https://openalex.org/keywords/mechanics","display_name":"Mechanics","score":0.06347274780273438}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6725825071334839},{"id":"https://openalex.org/C195370968","wikidata":"https://www.wikidata.org/wiki/Q1754002","display_name":"Threshold voltage","level":4,"score":0.642086923122406},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.6341371536254883},{"id":"https://openalex.org/C189278905","wikidata":"https://www.wikidata.org/wiki/Q2157708","display_name":"Wide-bandgap semiconductor","level":2,"score":0.6089413166046143},{"id":"https://openalex.org/C48677424","wikidata":"https://www.wikidata.org/wiki/Q6888088","display_name":"Mode (computer interface)","level":2,"score":0.5505080223083496},{"id":"https://openalex.org/C207821765","wikidata":"https://www.wikidata.org/wiki/Q405372","display_name":"Instability","level":2,"score":0.5297656655311584},{"id":"https://openalex.org/C2778871202","wikidata":"https://www.wikidata.org/wiki/Q411713","display_name":"Gallium nitride","level":3,"score":0.5275135636329651},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.5227711200714111},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.49413159489631653},{"id":"https://openalex.org/C20254490","wikidata":"https://www.wikidata.org/wiki/Q719550","display_name":"Biasing","level":3,"score":0.4448344111442566},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3066714406013489},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.22016015648841858},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.21289372444152832},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.1842963695526123},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.12462681531906128},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.10276871919631958},{"id":"https://openalex.org/C57879066","wikidata":"https://www.wikidata.org/wiki/Q41217","display_name":"Mechanics","level":1,"score":0.06347274780273438},{"id":"https://openalex.org/C111919701","wikidata":"https://www.wikidata.org/wiki/Q9135","display_name":"Operating system","level":1,"score":0.0},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/drc61706.2024.10605412","is_oa":false,"landing_page_url":"http://dx.doi.org/10.1109/drc61706.2024.10605412","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2024 Device Research Conference (DRC)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.699999988079071,"id":"https://metadata.un.org/sdg/13","display_name":"Climate action"}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":6,"referenced_works":["https://openalex.org/W2304435231","https://openalex.org/W2902654293","https://openalex.org/W3045485671","https://openalex.org/W3110928135","https://openalex.org/W4385194698","https://openalex.org/W4385413334"],"related_works":["https://openalex.org/W2000487630","https://openalex.org/W1988167421","https://openalex.org/W2017113730","https://openalex.org/W2109359929","https://openalex.org/W2654716541","https://openalex.org/W2037936622","https://openalex.org/W4297582192","https://openalex.org/W2533157014","https://openalex.org/W4289782876","https://openalex.org/W4385624134"],"abstract_inverted_index":{"Gallium":[0],"Nitride":[1],"(GaN)":[2],"High":[3],"Electron":[4],"Mobility":[5],"Transistors":[6],"(HEMTs)":[7],"are":[8],"pivotal":[9],"for":[10,155],"next-generation":[11],"power":[12,97,156],"switching":[13,157],"applications":[14],"due":[15],"to":[16,80,133],"their":[17],"wide":[18],"band":[19],"gap,":[20],"high":[21,29],"current":[22],"density,":[23],"extensive":[24],"operating":[25],"temperature":[26,76],"range,":[27],"and":[28,38,50,59,75,109,152],"breakdown":[30],"voltage":[31],"[1]":[32],",":[33],"[2]":[34],".":[35,85],"The":[36],"reliability":[37],"performance":[39,68],"stability":[40],"of":[41,47,57,93],"GaN-HEMTs":[42],"depend":[43],"on":[44,95],"the":[45,48,55,91],"selection":[46],"substrate":[49],"buffer":[51,103],"layers":[52],"influenced":[53],"by":[54],"presence":[56],"defects":[58],"strain":[60],"resulting":[61],"from":[62],"lattice":[63,107],"mismatch.":[64],"Thus,":[65],"assessing":[66],"device":[67],"under":[69,115],"various":[70],"stimulations,":[71],"such":[72],"as":[73],"bias":[74,137],"acceleration,":[77],"is":[78],"essential":[79],"achieve":[81],"reliable":[82],"devices":[83],"[3]":[84],"In":[86],"this":[87],"work,":[88],"we":[89],"examine":[90],"impact":[92],"PBTI":[94,123],"industry-standard":[96],"GaN":[98],"MIS-HEMTs":[99],"featuring":[100],"two":[101],"distinct":[102],"layers:":[104],"AlN/AlGaN/GaN":[105],"supper":[106],"(W1)":[108],"three":[110],"steps":[111],"graded":[112],"AlGaN":[113],"(W2),":[114],"positive-biased":[116],"stress":[117],"at":[118],"V":[119],"GS":[120],"=20":[121],"V.":[122],"tests":[124],"reveal":[125],"that":[126],"W2":[127],"induced":[128],"less":[129],"Vth":[130],"instability":[131],"compared":[132],"W1":[134,140],"during":[135],"positive":[136],"stress.":[138],"However,":[139],"demonstrates":[141],"a":[142],"faster":[143],"recovery":[144],"rate":[145],"than":[146],"W2,":[147],"showing":[148],"its":[149],"superior":[150],"robustness":[151],"more":[153],"suitability":[154],"applications.":[158]},"counts_by_year":[],"updated_date":"2026-07-29T14:22:42.915294","created_date":"2025-10-10T00:00:00"}