{"id":"https://openalex.org/W4401071671","doi":"https://doi.org/10.1109/drc61706.2024.10605410","title":"Boron-Doped Aluminum Nitride Ferroelectric Field-Effect Transistors with ZnO Semiconductor Channel","display_name":"Boron-Doped Aluminum Nitride Ferroelectric Field-Effect Transistors with ZnO Semiconductor Channel","publication_year":2024,"publication_date":"2024-06-24","ids":{"openalex":"https://openalex.org/W4401071671","doi":"https://doi.org/10.1109/drc61706.2024.10605410"},"language":"en","primary_location":{"id":"doi:10.1109/drc61706.2024.10605410","is_oa":false,"landing_page_url":"https://doi.org/10.1109/drc61706.2024.10605410","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2024 Device Research Conference (DRC)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5040798274","display_name":"Quyen Tran","orcid":null},"institutions":[],"countries":[],"is_corresponding":true,"raw_author_name":"Quyen Tran","raw_affiliation_strings":["Electrical Engineering"],"affiliations":[{"raw_affiliation_string":"Electrical Engineering","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5074498864","display_name":"John Hayden","orcid":"https://orcid.org/0000-0002-0055-0198"},"institutions":[{"id":"https://openalex.org/I4210103723","display_name":"MSSCORPS (Taiwan)","ror":"https://ror.org/01b6ag081","country_code":"TW","type":"company","lineage":["https://openalex.org/I4210103723"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"John Hayden","raw_affiliation_strings":["Material Science and Engineering"],"affiliations":[{"raw_affiliation_string":"Material Science and Engineering","institution_ids":["https://openalex.org/I4210103723"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5071714521","display_name":"Joseph Casamento","orcid":"https://orcid.org/0000-0002-8621-1145"},"institutions":[{"id":"https://openalex.org/I63966007","display_name":"Massachusetts Institute of Technology","ror":"https://ror.org/042nb2s44","country_code":"US","type":"education","lineage":["https://openalex.org/I63966007"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Joseph Casamento","raw_affiliation_strings":["Massachusetts Institute of Technology,Cambridge,U.S.A,02139"],"affiliations":[{"raw_affiliation_string":"Massachusetts Institute of Technology,Cambridge,U.S.A,02139","institution_ids":["https://openalex.org/I63966007"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5005850270","display_name":"Jon\u2010Paul Maria","orcid":"https://orcid.org/0000-0003-3604-4761"},"institutions":[{"id":"https://openalex.org/I4210103723","display_name":"MSSCORPS (Taiwan)","ror":"https://ror.org/01b6ag081","country_code":"TW","type":"company","lineage":["https://openalex.org/I4210103723"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Jon-Paul Maria","raw_affiliation_strings":["Material Science and Engineering"],"affiliations":[{"raw_affiliation_string":"Material Science and Engineering","institution_ids":["https://openalex.org/I4210103723"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5059843180","display_name":"Thomas N. Jackson","orcid":"https://orcid.org/0000-0003-2272-5830"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Thomas N. Jackson","raw_affiliation_strings":["Electrical Engineering"],"affiliations":[{"raw_affiliation_string":"Electrical Engineering","institution_ids":[]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":5,"corresponding_author_ids":["https://openalex.org/A5040798274"],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.3919,"has_fulltext":false,"cited_by_count":2,"citation_normalized_percentile":{"value":0.56280299,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":95},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"2"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11160","display_name":"Acoustic Wave Resonator Technologies","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2204","display_name":"Biomedical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11160","display_name":"Acoustic Wave Resonator Technologies","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2204","display_name":"Biomedical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.9988999962806702,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9955999851226807,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.8012231588363647},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.6719969511032104},{"id":"https://openalex.org/keywords/doping","display_name":"Doping","score":0.671741247177124},{"id":"https://openalex.org/keywords/aluminium","display_name":"Aluminium","score":0.634323000907898},{"id":"https://openalex.org/keywords/ferroelectricity","display_name":"Ferroelectricity","score":0.5776086449623108},{"id":"https://openalex.org/keywords/nitride","display_name":"Nitride","score":0.5566226840019226},{"id":"https://openalex.org/keywords/boron-nitride","display_name":"Boron nitride","score":0.5475616455078125},{"id":"https://openalex.org/keywords/field-effect-transistor","display_name":"Field-effect transistor","score":0.54509437084198},{"id":"https://openalex.org/keywords/semiconductor","display_name":"Semiconductor","score":0.5411715507507324},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.5183221101760864},{"id":"https://openalex.org/keywords/wide-bandgap-semiconductor","display_name":"Wide-bandgap semiconductor","score":0.50444495677948},{"id":"https://openalex.org/keywords/channel","display_name":"Channel (broadcasting)","score":0.4392060935497284},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.18893176317214966},{"id":"https://openalex.org/keywords/metallurgy","display_name":"Metallurgy","score":0.1870669722557068},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.18537619709968567},{"id":"https://openalex.org/keywords/dielectric","display_name":"Dielectric","score":0.1513887643814087},{"id":"https://openalex.org/keywords/layer","display_name":"Layer (electronics)","score":0.07951492071151733},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.061610907316207886},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.05197986960411072}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.8012231588363647},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.6719969511032104},{"id":"https://openalex.org/C57863236","wikidata":"https://www.wikidata.org/wiki/Q1130571","display_name":"Doping","level":2,"score":0.671741247177124},{"id":"https://openalex.org/C513153333","wikidata":"https://www.wikidata.org/wiki/Q663","display_name":"Aluminium","level":2,"score":0.634323000907898},{"id":"https://openalex.org/C79090758","wikidata":"https://www.wikidata.org/wiki/Q1045739","display_name":"Ferroelectricity","level":3,"score":0.5776086449623108},{"id":"https://openalex.org/C194760766","wikidata":"https://www.wikidata.org/wiki/Q410851","display_name":"Nitride","level":3,"score":0.5566226840019226},{"id":"https://openalex.org/C2780243435","wikidata":"https://www.wikidata.org/wiki/Q410193","display_name":"Boron nitride","level":2,"score":0.5475616455078125},{"id":"https://openalex.org/C145598152","wikidata":"https://www.wikidata.org/wiki/Q176097","display_name":"Field-effect transistor","level":4,"score":0.54509437084198},{"id":"https://openalex.org/C108225325","wikidata":"https://www.wikidata.org/wiki/Q11456","display_name":"Semiconductor","level":2,"score":0.5411715507507324},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.5183221101760864},{"id":"https://openalex.org/C189278905","wikidata":"https://www.wikidata.org/wiki/Q2157708","display_name":"Wide-bandgap semiconductor","level":2,"score":0.50444495677948},{"id":"https://openalex.org/C127162648","wikidata":"https://www.wikidata.org/wiki/Q16858953","display_name":"Channel (broadcasting)","level":2,"score":0.4392060935497284},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.18893176317214966},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.1870669722557068},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.18537619709968567},{"id":"https://openalex.org/C133386390","wikidata":"https://www.wikidata.org/wiki/Q184996","display_name":"Dielectric","level":2,"score":0.1513887643814087},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.07951492071151733},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.061610907316207886},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.05197986960411072}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/drc61706.2024.10605410","is_oa":false,"landing_page_url":"https://doi.org/10.1109/drc61706.2024.10605410","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2024 Device Research Conference (DRC)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","score":0.5600000023841858,"id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[{"id":"https://openalex.org/F4320332359","display_name":"Office of Science","ror":"https://ror.org/00mmn6b08"},{"id":"https://openalex.org/F4320338420","display_name":"Energy Frontier Research Centers","ror":null}],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":3,"referenced_works":["https://openalex.org/W4296323454","https://openalex.org/W4377226773","https://openalex.org/W4385192252"],"related_works":["https://openalex.org/W2382198941","https://openalex.org/W2795319754","https://openalex.org/W4232318839","https://openalex.org/W2182626056","https://openalex.org/W1875114914","https://openalex.org/W2248971758","https://openalex.org/W2469895656","https://openalex.org/W2951516764","https://openalex.org/W1963822728","https://openalex.org/W2034643761"],"abstract_inverted_index":{"The":[0],"discovery":[1],"of":[2],"ferroelectricity":[3,44],"in":[4,22,38,48],"hafnium":[5],"zirconium":[6],"oxide":[7],"(Hf":[8],"x":[9,61,67,103,128],"Zr":[10],"1-x":[11,59,65,101,126],"O":[12],"2":[13,118],")":[14],"and":[15,31,53,63,79,92,109,141],"related":[16],"fluorite":[17],"materials":[18,50,71],"has":[19,45],"spurred":[20],"interested":[21],"ferroelectric":[23,105,110],"devices":[24,33],"suitable":[25],"for":[26],"integration":[27],"on":[28],"silicon":[29],"ICs":[30],"especially":[32],"that":[34],"can":[35],"be":[36],"embedded":[37],"the":[39],"back-end-of-line":[40],"(BEOL).":[41],"More":[42],"recently,":[43],"been":[46,113],"found":[47],"wurtzite":[49],"including":[51],"scandium":[52],"boron":[54],"doped":[55],"aluminum":[56],"nitride":[57],"(Al":[58],"Sc":[60,102],"N":[62,104,129],"Al":[64,100,125],"B":[66,127],"N).":[68],"Although":[69],"these":[70],"currently":[72],"have":[73,112],"undesirably":[74],"large":[75,93],"coercive":[76,81],"electric":[77,82,86],"field,":[78],"small":[80],"field":[83,87],"to":[84],"breakdown":[85],"ratio,":[88],"low":[89],"processing":[90],"temperature":[91],"remanent":[94],"polarization":[95],"present":[96],"intriguing":[97],"device":[98],"possibilities.":[99],"field-effect":[106],"transistors":[107],"(FeFETs)":[108],"diodes":[111],"reported":[114],"recently":[115],"[1":[116],",":[117,119],"3]":[120],".":[121],"Here,":[122],"we":[123],"report":[124],"FeFETs":[130],"using":[131],"ZnO":[132],"semiconductor":[133],"channels":[134],"with":[135],">":[136],"1":[137],"V":[138,144],"memory":[139],"window":[140],"<":[142],"\u00b110":[143],"switching":[145],"voltages.":[146]},"counts_by_year":[{"year":2025,"cited_by_count":1},{"year":2024,"cited_by_count":1}],"updated_date":"2025-12-26T23:08:49.675405","created_date":"2025-10-10T00:00:00"}