{"id":"https://openalex.org/W4401071742","doi":"https://doi.org/10.1109/drc61706.2024.10605390","title":"Reduction of Series Resistance in Top-Gate ZnO Thin-Film Transistors by Air Exposure and Oxygen Plasma Treatment","display_name":"Reduction of Series Resistance in Top-Gate ZnO Thin-Film Transistors by Air Exposure and Oxygen Plasma Treatment","publication_year":2024,"publication_date":"2024-06-24","ids":{"openalex":"https://openalex.org/W4401071742","doi":"https://doi.org/10.1109/drc61706.2024.10605390"},"language":"en","primary_location":{"id":"doi:10.1109/drc61706.2024.10605390","is_oa":false,"landing_page_url":"http://dx.doi.org/10.1109/drc61706.2024.10605390","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2024 Device Research Conference (DRC)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5054257928","display_name":"Zili Tang","orcid":"https://orcid.org/0009-0006-1999-6751"},"institutions":[{"id":"https://openalex.org/I20089843","display_name":"Princeton University","ror":"https://ror.org/00hx57361","country_code":"US","type":"education","lineage":["https://openalex.org/I20089843"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"Zili Tang","raw_affiliation_strings":["Princeton University,Department of Electrical and Computer Engineering,Princeton,NJ,USA,08544"],"affiliations":[{"raw_affiliation_string":"Princeton University,Department of Electrical and Computer Engineering,Princeton,NJ,USA,08544","institution_ids":["https://openalex.org/I20089843"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5104297618","display_name":"Mohammad Shafiqul Islam","orcid":"https://orcid.org/0000-0002-0998-3643"},"institutions":[{"id":"https://openalex.org/I20089843","display_name":"Princeton University","ror":"https://ror.org/00hx57361","country_code":"US","type":"education","lineage":["https://openalex.org/I20089843"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Mohammad Shafiqul Islam","raw_affiliation_strings":["Princeton University,Department of Electrical and Computer Engineering,Princeton,NJ,USA,08544"],"affiliations":[{"raw_affiliation_string":"Princeton University,Department of Electrical and Computer Engineering,Princeton,NJ,USA,08544","institution_ids":["https://openalex.org/I20089843"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5026232632","display_name":"Sigurd Wagner","orcid":null},"institutions":[{"id":"https://openalex.org/I20089843","display_name":"Princeton University","ror":"https://ror.org/00hx57361","country_code":"US","type":"education","lineage":["https://openalex.org/I20089843"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Sigurd Wagner","raw_affiliation_strings":["Princeton University,Department of Electrical and Computer Engineering,Princeton,NJ,USA,08544"],"affiliations":[{"raw_affiliation_string":"Princeton University,Department of Electrical and Computer Engineering,Princeton,NJ,USA,08544","institution_ids":["https://openalex.org/I20089843"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101645607","display_name":"Naveen Verma","orcid":"https://orcid.org/0000-0002-8208-5030"},"institutions":[{"id":"https://openalex.org/I20089843","display_name":"Princeton University","ror":"https://ror.org/00hx57361","country_code":"US","type":"education","lineage":["https://openalex.org/I20089843"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Naveen Verma","raw_affiliation_strings":["Princeton University,Department of Electrical and Computer Engineering,Princeton,NJ,USA,08544"],"affiliations":[{"raw_affiliation_string":"Princeton University,Department of Electrical and Computer Engineering,Princeton,NJ,USA,08544","institution_ids":["https://openalex.org/I20089843"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5074204707","display_name":"James C. Sturm","orcid":"https://orcid.org/0000-0002-0878-5266"},"institutions":[{"id":"https://openalex.org/I20089843","display_name":"Princeton University","ror":"https://ror.org/00hx57361","country_code":"US","type":"education","lineage":["https://openalex.org/I20089843"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"James C. Sturm","raw_affiliation_strings":["Princeton University,Department of Electrical and Computer Engineering,Princeton,NJ,USA,08544"],"affiliations":[{"raw_affiliation_string":"Princeton University,Department of Electrical and Computer Engineering,Princeton,NJ,USA,08544","institution_ids":["https://openalex.org/I20089843"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":5,"corresponding_author_ids":["https://openalex.org/A5054257928"],"corresponding_institution_ids":["https://openalex.org/I20089843"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.06876925,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":"87","issue":null,"first_page":"1","last_page":"2"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10090","display_name":"ZnO doping and properties","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10090","display_name":"ZnO doping and properties","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10623","display_name":"Thin-Film Transistor Technologies","score":0.9994000196456909,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10461","display_name":"Gas Sensing Nanomaterials and Sensors","score":0.9972000122070312,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.7110183835029602},{"id":"https://openalex.org/keywords/oxygen","display_name":"Oxygen","score":0.5711944103240967},{"id":"https://openalex.org/keywords/plasma","display_name":"Plasma","score":0.5529077053070068},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.5421707034111023},{"id":"https://openalex.org/keywords/thin-film-transistor","display_name":"Thin-film transistor","score":0.5150067806243896},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.5051730275154114},{"id":"https://openalex.org/keywords/equivalent-series-resistance","display_name":"Equivalent series resistance","score":0.4616720676422119},{"id":"https://openalex.org/keywords/thin-film","display_name":"Thin film","score":0.4297581911087036},{"id":"https://openalex.org/keywords/contact-resistance","display_name":"Contact resistance","score":0.4284655451774597},{"id":"https://openalex.org/keywords/reduction","display_name":"Reduction (mathematics)","score":0.41652798652648926},{"id":"https://openalex.org/keywords/wide-bandgap-semiconductor","display_name":"Wide-bandgap semiconductor","score":0.41299962997436523},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.2527228593826294},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.25237470865249634},{"id":"https://openalex.org/keywords/chemistry","display_name":"Chemistry","score":0.14380937814712524},{"id":"https://openalex.org/keywords/layer","display_name":"Layer (electronics)","score":0.11115127801895142},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.09089767932891846},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.05926978588104248}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7110183835029602},{"id":"https://openalex.org/C540031477","wikidata":"https://www.wikidata.org/wiki/Q629","display_name":"Oxygen","level":2,"score":0.5711944103240967},{"id":"https://openalex.org/C82706917","wikidata":"https://www.wikidata.org/wiki/Q10251","display_name":"Plasma","level":2,"score":0.5529077053070068},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.5421707034111023},{"id":"https://openalex.org/C87359718","wikidata":"https://www.wikidata.org/wiki/Q1271916","display_name":"Thin-film transistor","level":3,"score":0.5150067806243896},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5051730275154114},{"id":"https://openalex.org/C14485415","wikidata":"https://www.wikidata.org/wiki/Q5384730","display_name":"Equivalent series resistance","level":3,"score":0.4616720676422119},{"id":"https://openalex.org/C19067145","wikidata":"https://www.wikidata.org/wiki/Q1137203","display_name":"Thin film","level":2,"score":0.4297581911087036},{"id":"https://openalex.org/C123671423","wikidata":"https://www.wikidata.org/wiki/Q332329","display_name":"Contact resistance","level":3,"score":0.4284655451774597},{"id":"https://openalex.org/C111335779","wikidata":"https://www.wikidata.org/wiki/Q3454686","display_name":"Reduction (mathematics)","level":2,"score":0.41652798652648926},{"id":"https://openalex.org/C189278905","wikidata":"https://www.wikidata.org/wiki/Q2157708","display_name":"Wide-bandgap semiconductor","level":2,"score":0.41299962997436523},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.2527228593826294},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.25237470865249634},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.14380937814712524},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.11115127801895142},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.09089767932891846},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.05926978588104248},{"id":"https://openalex.org/C2524010","wikidata":"https://www.wikidata.org/wiki/Q8087","display_name":"Geometry","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C33923547","wikidata":"https://www.wikidata.org/wiki/Q395","display_name":"Mathematics","level":0,"score":0.0},{"id":"https://openalex.org/C178790620","wikidata":"https://www.wikidata.org/wiki/Q11351","display_name":"Organic chemistry","level":1,"score":0.0},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/drc61706.2024.10605390","is_oa":false,"landing_page_url":"http://dx.doi.org/10.1109/drc61706.2024.10605390","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2024 Device Research Conference (DRC)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Clean water and sanitation","id":"https://metadata.un.org/sdg/6","score":0.6299999952316284}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":4,"referenced_works":["https://openalex.org/W1966189370","https://openalex.org/W2039558841","https://openalex.org/W2103229647","https://openalex.org/W2538223858"],"related_works":["https://openalex.org/W2532740565","https://openalex.org/W2527471840","https://openalex.org/W2049246612","https://openalex.org/W1938027841","https://openalex.org/W2077611628","https://openalex.org/W2084591572","https://openalex.org/W2166893257","https://openalex.org/W2019774880","https://openalex.org/W1973428710","https://openalex.org/W1256500646"],"abstract_inverted_index":{"Thin-film":[0],"transistors":[1],"(TFTs)":[2],"are":[3,97],"typically":[4],"made":[5],"with":[6],"a":[7,24,37,67,98,199],"non-self-aligned":[8],"bottom-gate":[9],"process,":[10],"which":[11,167],"causes":[12],"large":[13,38],"parasitic":[14,31],"capacitance":[15],"from":[16],"the":[17,30,42,46,58,77,81,85,90,116,120,127,132,156,173,194,210,217,224],"gate":[18],"and":[19,45,101,163],"source/drain":[20],"(S/D)":[21],"overlaps.":[22],"While":[23],"top-gate":[25,182],"structure":[26],"can":[27,34,168],"effectively":[28],"reduce":[29,119,131],"capacitance,":[32],"it":[33,208],"lead":[35],"to":[36,54,75,114,141,149,186,212,216],"series":[39,225],"resistance":[40,226],"between":[41],"gated":[43],"channel":[44,82],"S/D":[47],"contacts":[48],"(":[49,71],"Fig.":[50,72],"1(a)":[51],")":[52,74],"due":[53],"high":[55],"resistivity":[56,78,91,137],"of":[57,80,92,201],"as-deposited":[59],"semiconductor":[60],"(ZnO":[61],"in":[62,103,172,222,227],"our":[63,178,228],"case).":[64],"We":[65],"use":[66],"self-aligned":[68,190],"plasma":[69,109,164,191],"treatment":[70,110,165,192],"1(b)":[73],"lower":[76],"outside":[79],"region.":[83],"In":[84,177],"literature,":[86],"oxygen":[87,95,108],"strongly":[88],"affects":[89],"ZnO,":[93],"as":[94],"vacancies":[96],"common":[99],"defect":[100],"donor":[102],"ZnO":[104,136,157,174,184],"[1]":[105],".":[106,135],"However,":[107],"has":[111],"been":[112],"reported":[113],"raise":[115],"mobility":[117,133],"but":[118,130],"carrier":[121,128],"concentration":[122,129],"[2]":[123],",":[124,153],"or":[125,146],"increase":[126,139],"[3]":[134,152],"may":[138],"up":[140],"10":[142],"7":[143],"m\u03a9\u00b7cm":[144,151],"[4]":[145],"be":[147],"reduced":[148],"2":[150],"depending":[154],"on":[155],"deposition":[158],"method":[159],"(sputtering,":[160],"sol-gel,":[161],"etc.)":[162],"conditions,":[166],"yield":[169],"different":[170],"microstructures":[171],"thin":[175],"film.":[176],"work,":[179],"we":[180,205],"exposed":[181],"nanocrystalline":[183],"TFTs":[185],"an":[187],"O-plasma.":[188],"A":[189],"raised":[193],"output":[195],"saturation":[196],"current":[197],"by":[198],"factor":[200],"\u00d7100.":[202],"But":[203],"surprisingly,":[204],"find":[206],"that":[207,219],"is":[209,220],"exposure":[211],"ambient":[213],"air,":[214],"not":[215],"plasma,":[218],"decisive":[221],"reducing":[223],"work.":[229]},"counts_by_year":[],"updated_date":"2025-12-26T23:08:49.675405","created_date":"2025-10-10T00:00:00"}