{"id":"https://openalex.org/W4385192261","doi":"https://doi.org/10.1109/drc58590.2023.10187055","title":"Fully Integrated Flexible RF Detectors in MoS<sub>2</sub> and Graphene based MMIC","display_name":"Fully Integrated Flexible RF Detectors in MoS<sub>2</sub> and Graphene based MMIC","publication_year":2023,"publication_date":"2023-06-25","ids":{"openalex":"https://openalex.org/W4385192261","doi":"https://doi.org/10.1109/drc58590.2023.10187055"},"language":"en","primary_location":{"id":"doi:10.1109/drc58590.2023.10187055","is_oa":false,"landing_page_url":"http://dx.doi.org/10.1109/drc58590.2023.10187055","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2023 Device Research Conference (DRC)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5073107218","display_name":"Paula Palacios","orcid":"https://orcid.org/0000-0003-3089-4271"},"institutions":[{"id":"https://openalex.org/I887968799","display_name":"RWTH Aachen University","ror":"https://ror.org/04xfq0f34","country_code":"DE","type":"education","lineage":["https://openalex.org/I887968799"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"P. Palacios","raw_affiliation_strings":["RWTH Aachen University,Chair of High Frequency Electronics,Aachen,Germany,52064"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"RWTH Aachen University,Chair of High Frequency Electronics,Aachen,Germany,52064","institution_ids":["https://openalex.org/I887968799"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5017991655","display_name":"Eros Reato","orcid":"https://orcid.org/0000-0002-7418-0089"},"institutions":[{"id":"https://openalex.org/I4210108354","display_name":"AMO (Germany)","ror":"https://ror.org/01sd0e661","country_code":"DE","type":"company","lineage":["https://openalex.org/I4210108354"]},{"id":"https://openalex.org/I887968799","display_name":"RWTH Aachen University","ror":"https://ror.org/04xfq0f34","country_code":"DE","type":"education","lineage":["https://openalex.org/I887968799"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"E. Reato","raw_affiliation_strings":["RWTH Aachen University,Chair of Electronic Devices,Aachen,Germany,52074","Advanced Microelectronic Center Aachen, AMO GmbH, Aachen, Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"RWTH Aachen University,Chair of Electronic Devices,Aachen,Germany,52074","institution_ids":["https://openalex.org/I887968799"]},{"raw_affiliation_string":"Advanced Microelectronic Center Aachen, AMO GmbH, Aachen, Germany","institution_ids":["https://openalex.org/I4210108354"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5113309163","display_name":"Mohamed Saeed","orcid":"https://orcid.org/0000-0002-2750-8520"},"institutions":[{"id":"https://openalex.org/I887968799","display_name":"RWTH Aachen University","ror":"https://ror.org/04xfq0f34","country_code":"DE","type":"education","lineage":["https://openalex.org/I887968799"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"M. Saeed","raw_affiliation_strings":["RWTH Aachen University,Chair of High Frequency Electronics,Aachen,Germany,52064"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"RWTH Aachen University,Chair of High Frequency Electronics,Aachen,Germany,52064","institution_ids":["https://openalex.org/I887968799"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5046531561","display_name":"Francisco Pasadas","orcid":"https://orcid.org/0000-0003-3992-9864"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"F. Pasadas","raw_affiliation_strings":["Dep. de Electr&#x00F3;nica y Tecnolog&#x00ED;a de Computadores,Granada,Spain,18071"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Dep. de Electr&#x00F3;nica y Tecnolog&#x00ED;a de Computadores,Granada,Spain,18071","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5035837243","display_name":"Zhenxing Wang","orcid":"https://orcid.org/0000-0002-2103-7692"},"institutions":[{"id":"https://openalex.org/I4210108354","display_name":"AMO (Germany)","ror":"https://ror.org/01sd0e661","country_code":"DE","type":"company","lineage":["https://openalex.org/I4210108354"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Z. Wang","raw_affiliation_strings":["AMO GmbH,Advanced Microelectronic Center Aachen,Aachen,Germany,52074"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"AMO GmbH,Advanced Microelectronic Center Aachen,Aachen,Germany,52074","institution_ids":["https://openalex.org/I4210108354"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5087833312","display_name":"Max C. Lemme","orcid":"https://orcid.org/0000-0003-4552-2411"},"institutions":[{"id":"https://openalex.org/I4210108354","display_name":"AMO (Germany)","ror":"https://ror.org/01sd0e661","country_code":"DE","type":"company","lineage":["https://openalex.org/I4210108354"]},{"id":"https://openalex.org/I887968799","display_name":"RWTH Aachen University","ror":"https://ror.org/04xfq0f34","country_code":"DE","type":"education","lineage":["https://openalex.org/I887968799"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"M. C. Lemme","raw_affiliation_strings":["RWTH Aachen University,Chair of Electronic Devices,Aachen,Germany,52074","Advanced Microelectronic Center Aachen, AMO GmbH, Aachen, Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"RWTH Aachen University,Chair of Electronic Devices,Aachen,Germany,52074","institution_ids":["https://openalex.org/I887968799"]},{"raw_affiliation_string":"Advanced Microelectronic Center Aachen, AMO GmbH, Aachen, Germany","institution_ids":["https://openalex.org/I4210108354"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5110240648","display_name":"Renato Negra","orcid":null},"institutions":[{"id":"https://openalex.org/I887968799","display_name":"RWTH Aachen University","ror":"https://ror.org/04xfq0f34","country_code":"DE","type":"education","lineage":["https://openalex.org/I887968799"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"R. Negra","raw_affiliation_strings":["RWTH Aachen University,Chair of High Frequency Electronics,Aachen,Germany,52064"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"RWTH Aachen University,Chair of High Frequency Electronics,Aachen,Germany,52064","institution_ids":["https://openalex.org/I887968799"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":7,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.0892,"has_fulltext":false,"cited_by_count":1,"citation_normalized_percentile":{"value":0.33241699,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":91,"max":95},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"2"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10083","display_name":"Graphene research and applications","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10083","display_name":"Graphene research and applications","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10275","display_name":"2D Materials and Applications","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12046","display_name":"MXene and MAX Phase Materials","score":0.9991000294685364,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/graphene","display_name":"Graphene","score":0.7623580694198608},{"id":"https://openalex.org/keywords/electronic-circuit","display_name":"Electronic circuit","score":0.6313954591751099},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.5929251313209534},{"id":"https://openalex.org/keywords/resistor","display_name":"Resistor","score":0.5890682935714722},{"id":"https://openalex.org/keywords/electronics","display_name":"Electronics","score":0.5470690131187439},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.5412106513977051},{"id":"https://openalex.org/keywords/integrated-circuit","display_name":"Integrated circuit","score":0.48622456192970276},{"id":"https://openalex.org/keywords/capacitor","display_name":"Capacitor","score":0.4615016579627991},{"id":"https://openalex.org/keywords/monolithic-microwave-integrated-circuit","display_name":"Monolithic microwave integrated circuit","score":0.44905829429626465},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.4340880513191223},{"id":"https://openalex.org/keywords/diode","display_name":"Diode","score":0.41465508937835693},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.40778613090515137},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.3926028907299042},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.34391069412231445},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.3008049726486206},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.23108121752738953},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.16831481456756592},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.1553763449192047},{"id":"https://openalex.org/keywords/amplifier","display_name":"Amplifier","score":0.10510894656181335}],"concepts":[{"id":"https://openalex.org/C30080830","wikidata":"https://www.wikidata.org/wiki/Q169917","display_name":"Graphene","level":2,"score":0.7623580694198608},{"id":"https://openalex.org/C134146338","wikidata":"https://www.wikidata.org/wiki/Q1815901","display_name":"Electronic circuit","level":2,"score":0.6313954591751099},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.5929251313209534},{"id":"https://openalex.org/C137488568","wikidata":"https://www.wikidata.org/wiki/Q5321","display_name":"Resistor","level":3,"score":0.5890682935714722},{"id":"https://openalex.org/C138331895","wikidata":"https://www.wikidata.org/wiki/Q11650","display_name":"Electronics","level":2,"score":0.5470690131187439},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5412106513977051},{"id":"https://openalex.org/C530198007","wikidata":"https://www.wikidata.org/wiki/Q80831","display_name":"Integrated circuit","level":2,"score":0.48622456192970276},{"id":"https://openalex.org/C52192207","wikidata":"https://www.wikidata.org/wiki/Q5322","display_name":"Capacitor","level":3,"score":0.4615016579627991},{"id":"https://openalex.org/C128450285","wikidata":"https://www.wikidata.org/wiki/Q1945036","display_name":"Monolithic microwave integrated circuit","level":4,"score":0.44905829429626465},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.4340880513191223},{"id":"https://openalex.org/C78434282","wikidata":"https://www.wikidata.org/wiki/Q11656","display_name":"Diode","level":2,"score":0.41465508937835693},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.40778613090515137},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.3926028907299042},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.34391069412231445},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.3008049726486206},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.23108121752738953},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.16831481456756592},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.1553763449192047},{"id":"https://openalex.org/C194257627","wikidata":"https://www.wikidata.org/wiki/Q211554","display_name":"Amplifier","level":3,"score":0.10510894656181335}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/drc58590.2023.10187055","is_oa":false,"landing_page_url":"http://dx.doi.org/10.1109/drc58590.2023.10187055","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2023 Device Research Conference (DRC)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy","score":0.4699999988079071}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":5,"referenced_works":["https://openalex.org/W1975628705","https://openalex.org/W2058122340","https://openalex.org/W2261852134","https://openalex.org/W4200623037","https://openalex.org/W4210261859"],"related_works":["https://openalex.org/W2389461683","https://openalex.org/W598463356","https://openalex.org/W1562902234","https://openalex.org/W1629995341","https://openalex.org/W1637926182","https://openalex.org/W1990065508","https://openalex.org/W2613355469","https://openalex.org/W1524782678","https://openalex.org/W2113803343","https://openalex.org/W1977797987"],"abstract_inverted_index":{"Triggered":[0],"by":[1,103,265,382,443],"the":[2,12,21,27,45,56,62,106,123,128,150,158,209,215,224,243,248,288,301,312,315,324,334,340,347,361,364,383,410,458,471,481,490],"exfoliation":[3],"of":[4,14,30,111,116,160,226,245,254,303,314,339,350,363,412],"graphene":[5,155],"in":[6,66,84,100,131,146,154,252,311,318,387,463,486],"2004":[7],"and":[8,53,76,87,109,134,166,174,203,256,306,331,336,369,407,436,438,466,469],"its":[9,50],"promising":[10],"properties,":[11],"research":[13],"2D":[15,119,294],"materials":[16,36],"has":[17,37,170],"exponentially":[18],"grown":[19],"over":[20],"last":[22],"decades":[23],"[1].":[24],"At":[25],"present,":[26],"further":[28],"development":[29],"RF":[31,282],"systems":[32],"based":[33,162],"on":[34,163,271],"these":[35],"two":[38,291],"main":[39],"challenges":[40,152,264],"to":[41,96,141,148,208,242,389,403],"be":[42,142],"addressed.":[43],"On":[44,122],"one":[46],"hand,":[47,125],"graphene,":[48,112],"despite":[49],"high":[51,107],"mobility":[52,108],"conductivity,":[54],"lacks":[55],"energy":[57],"bandgap,":[58],"which":[59,113],"intrinsically":[60],"limits":[61],"performance":[63,217,249,454],"when":[64,231],"utilised":[65],"transitors":[67],"[2].":[68,121,156],"Those":[69],"devices":[70,137,296],"present":[71,153],"low":[72,77,172],"ON/OFF":[73],"current":[74,78],"ratios":[75],"saturation,":[79],"what":[80],"hinders":[81],"their":[82],"employment":[83],"both":[85,263],"digital":[86],"analogue":[88],"circuits.":[89,283],"However,":[90,240],"graphene-based":[91],"diodes":[92],"have":[93,97,138,184,221],"been":[94,139,186],"demonstrated":[95,140,223],"excellent":[98,144],"behaviour":[99],"high-frequency":[101],"applications":[102],"fully":[104,279],"exploiting":[105],"nonlinearity":[110],"outperforms":[114],"that":[115,277],"any":[117],"other":[118,124],"material":[120],"transistors":[126],"are":[127,192,205,297,372,427],"fundamental":[129],"pillar":[130],"nowadays":[132],"electronics":[133],"hereof,":[135],"MoS2-based":[136],"an":[143,267,413],"solution":[145],"order":[147],"overcome":[149],"stated":[151],"Yet,":[157],"design":[159],"circuits":[161,182,195],"TMD-based":[164],"devices,":[165,460],"particularly":[167],"MoS<inf>2</inf>-based":[168],"transistors,":[169],"targeted":[171],"frequencies":[173],"technology":[175,316],"processes":[176],"suitable":[177],"for":[178,287,457,480],"monolithic":[179],"microwave":[180],"integrated":[181,280],"(MMICs)":[183],"not":[185],"reported":[187],"[3].":[188],"The":[189,219,376,451],"published":[190],"designs":[191],"mainly":[193],"hybrid":[194],"where":[196,346],"passive":[197,419],"components":[198,420],"such":[199],"as":[200,233,360,461,484],"inductors,":[201,423],"capacitors,":[202],"resistors":[204,440],"connected":[206],"externally":[207],"on-chip":[210,299],"active":[211,459],"device,":[212],"thus,":[213],"constraining":[214],"achievable":[216],"[4].":[218],"authors":[220],"also":[222],"capabilities":[225],"flexible":[227,281],"multilayer":[228],"MoS<inf>2</inf>":[229,307,365],"FETs":[230],"used":[232,402],"power":[234,258],"detectors":[235],"at":[236],"18":[237],"GHz":[238],"[5].":[239],"due":[241],"use":[244],"external":[246],"components,":[247],"was":[250],"limited":[251],"terms":[253],"bandwidth":[255],"input":[257],"sensitivity.":[259],"This":[260],"work":[261],"addresses":[262],"introducing":[266],"MMIC":[268],"process":[269],"developed":[270],"a":[272,351,390,444],"<tex>$8\\":[273],"\\mu\\mathrm{m}$</tex>-thick":[274,397],"polymide":[275],"(PI)":[276],"enables":[278],"In":[284],"this":[285],"manner,":[286],"first":[289],"time,":[290],"different":[292],"CVD":[293],"material-based":[295],"combined":[298],"consolidating":[300],"strengths":[302],"both,":[304],"graphene-diodes":[305],"FETs.":[308],"As":[309],"shown":[310,462],"cross-section":[313],"depicted":[317,485],"Fig.":[319,464,467,487],"1,":[320],"four":[321],"metal-layers":[322],"build":[323],"full":[325],"back-end-of-line":[326],"(BEOL)":[327],"stack.":[328],"Metals":[329],"M<inf>1</inf>":[330,358],"M2":[332],"form":[333],"anode":[335],"cathode":[337],"contacts":[338,371],"metal-insulator-graphene":[341],"(MIG)":[342],"diode":[343],"[2],":[344],"respectively,":[345],"insulator":[348],"consists":[349],"5":[352],"nm-thick":[353,415],"sputtered":[354],"Ti0<inf>2</inf>":[355,385],"layer.":[356,394],"Simultaneously,":[357],"acts":[359],"bottom-gate":[362],"transistor,":[366],"whose":[367,424],"drain":[368],"source":[370],"realised":[373],"using":[374,429],"M3.":[375],"gate":[377],"oxide":[378],"is":[379,401,455,477],"hence":[380],"formed":[381,433],"thin":[384],"layer":[386,446],"addition":[388],"40":[391],"nm":[392],"Al<inf>2</inf>O<inf>3</inf>":[393],"A":[395],"<tex>$2\\":[396],"top":[398],"metal":[399],"M4":[400,435],"implement":[404],"low-loss":[405],"passives":[406,483],"interconnects":[408],"after":[409],"deposition":[411],"80":[414],"encapsulation":[416],"oxide.":[417],"Further":[418],"include":[421],"spiral":[422],"through":[425],"lines":[426],"implemented":[428,442],"M<inf>1</inf>,":[430,437],"MIM":[431],"capacitors":[432],"between":[434],"thin-film":[439],"(TFR),":[441],"NiCr":[445],"with":[447],"<tex>$65\\":[448],"\\Omega/\\square$</tex>":[449],"resistance.":[450],"on-wafer":[452],"DC":[453],"characterized":[456],"2a":[465],"2b":[468],"demonstrates":[470],"expected":[472],"results.":[473],"Additional":[474],"S-parameter":[475],"characterization":[476],"carried":[478],"out":[479],"fabricated":[482],"2c":[488],"showing":[489],"typical":[491],"frequency":[492],"behaviour.":[493]},"counts_by_year":[{"year":2025,"cited_by_count":1}],"updated_date":"2026-06-11T09:08:48.828518","created_date":"2025-10-10T00:00:00"}