{"id":"https://openalex.org/W4385211820","doi":"https://doi.org/10.1109/drc58590.2023.10187018","title":"Reducing the tunneling barrier thickness of bilayer ferroelectric tunnel junctions with metallic electrodes","display_name":"Reducing the tunneling barrier thickness of bilayer ferroelectric tunnel junctions with metallic electrodes","publication_year":2023,"publication_date":"2023-06-25","ids":{"openalex":"https://openalex.org/W4385211820","doi":"https://doi.org/10.1109/drc58590.2023.10187018"},"language":"en","primary_location":{"id":"doi:10.1109/drc58590.2023.10187018","is_oa":false,"landing_page_url":"https://doi.org/10.1109/drc58590.2023.10187018","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2023 Device Research Conference (DRC)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5072395551","display_name":"Suzanne Lancaster","orcid":"https://orcid.org/0000-0002-5689-2795"},"institutions":[{"id":"https://openalex.org/I4210122489","display_name":"NaMLab (Germany)","ror":"https://ror.org/028070c57","country_code":"DE","type":"company","lineage":["https://openalex.org/I4210122489","https://openalex.org/I78650965"]}],"countries":["DE"],"is_corresponding":true,"raw_author_name":"Suzanne Lancaster","raw_affiliation_strings":["gGmbH,NaMLab,Dresden,Germany,01187"],"affiliations":[{"raw_affiliation_string":"gGmbH,NaMLab,Dresden,Germany,01187","institution_ids":["https://openalex.org/I4210122489"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5030531909","display_name":"Mattia Segatto","orcid":"https://orcid.org/0000-0002-0091-1862"},"institutions":[{"id":"https://openalex.org/I129043915","display_name":"University of Udine","ror":"https://ror.org/05ht0mh31","country_code":"IT","type":"education","lineage":["https://openalex.org/I129043915"]}],"countries":["IT"],"is_corresponding":false,"raw_author_name":"Mattia Segatto","raw_affiliation_strings":["University of Udine,DPIA,Udine,Italy,33100"],"affiliations":[{"raw_affiliation_string":"University of Udine,DPIA,Udine,Italy,33100","institution_ids":["https://openalex.org/I129043915"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100627134","display_name":"Cl\u00e1udia Silva","orcid":"https://orcid.org/0000-0003-1664-7768"},"institutions":[{"id":"https://openalex.org/I4210122489","display_name":"NaMLab (Germany)","ror":"https://ror.org/028070c57","country_code":"DE","type":"company","lineage":["https://openalex.org/I4210122489","https://openalex.org/I78650965"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Cl\u00e1udia Silva","raw_affiliation_strings":["gGmbH,NaMLab,Dresden,Germany,01187"],"affiliations":[{"raw_affiliation_string":"gGmbH,NaMLab,Dresden,Germany,01187","institution_ids":["https://openalex.org/I4210122489"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5073269358","display_name":"Benjamin Max","orcid":"https://orcid.org/0000-0002-6468-6596"},"institutions":[{"id":"https://openalex.org/I78650965","display_name":"TU Dresden","ror":"https://ror.org/042aqky30","country_code":"DE","type":"education","lineage":["https://openalex.org/I78650965"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Benjamin Max","raw_affiliation_strings":["Institute of Semiconductors and Microsystems, TU Dresden,Dresden,Germany,01187"],"affiliations":[{"raw_affiliation_string":"Institute of Semiconductors and Microsystems, TU Dresden,Dresden,Germany,01187","institution_ids":["https://openalex.org/I78650965"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5003850300","display_name":"Thomas Mikolajick","orcid":"https://orcid.org/0000-0003-3814-0378"},"institutions":[{"id":"https://openalex.org/I4210122489","display_name":"NaMLab (Germany)","ror":"https://ror.org/028070c57","country_code":"DE","type":"company","lineage":["https://openalex.org/I4210122489","https://openalex.org/I78650965"]},{"id":"https://openalex.org/I78650965","display_name":"TU Dresden","ror":"https://ror.org/042aqky30","country_code":"DE","type":"education","lineage":["https://openalex.org/I78650965"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Thomas Mikolajick","raw_affiliation_strings":["gGmbH,NaMLab,Dresden,Germany,01187","Institute of Semiconductors and Microsystems, TU Dresden, Dresden, Germany"],"affiliations":[{"raw_affiliation_string":"gGmbH,NaMLab,Dresden,Germany,01187","institution_ids":["https://openalex.org/I4210122489"]},{"raw_affiliation_string":"Institute of Semiconductors and Microsystems, TU Dresden, Dresden, Germany","institution_ids":["https://openalex.org/I78650965"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5022109981","display_name":"David Esseni","orcid":"https://orcid.org/0000-0002-3468-5197"},"institutions":[{"id":"https://openalex.org/I129043915","display_name":"University of Udine","ror":"https://ror.org/05ht0mh31","country_code":"IT","type":"education","lineage":["https://openalex.org/I129043915"]}],"countries":["IT"],"is_corresponding":false,"raw_author_name":"David Esseni","raw_affiliation_strings":["University of Udine,DPIA,Udine,Italy,33100"],"affiliations":[{"raw_affiliation_string":"University of Udine,DPIA,Udine,Italy,33100","institution_ids":["https://openalex.org/I129043915"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5021976967","display_name":"F. Driussi","orcid":"https://orcid.org/0000-0003-2175-6977"},"institutions":[{"id":"https://openalex.org/I129043915","display_name":"University of Udine","ror":"https://ror.org/05ht0mh31","country_code":"IT","type":"education","lineage":["https://openalex.org/I129043915"]}],"countries":["IT"],"is_corresponding":false,"raw_author_name":"Francesco Driussi","raw_affiliation_strings":["University of Udine,DPIA,Udine,Italy,33100"],"affiliations":[{"raw_affiliation_string":"University of Udine,DPIA,Udine,Italy,33100","institution_ids":["https://openalex.org/I129043915"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5072907754","display_name":"Stefan Slesazeck","orcid":"https://orcid.org/0000-0002-0414-0321"},"institutions":[{"id":"https://openalex.org/I4210122489","display_name":"NaMLab (Germany)","ror":"https://ror.org/028070c57","country_code":"DE","type":"company","lineage":["https://openalex.org/I4210122489","https://openalex.org/I78650965"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Stefan Slesazeck","raw_affiliation_strings":["gGmbH,NaMLab,Dresden,Germany,01187"],"affiliations":[{"raw_affiliation_string":"gGmbH,NaMLab,Dresden,Germany,01187","institution_ids":["https://openalex.org/I4210122489"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":8,"corresponding_author_ids":["https://openalex.org/A5072395551"],"corresponding_institution_ids":["https://openalex.org/I4210122489"],"apc_list":null,"apc_paid":null,"fwci":0.6686,"has_fulltext":false,"cited_by_count":5,"citation_normalized_percentile":{"value":0.68385784,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":91,"max":98},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"2"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10107","display_name":"Ferroelectric and Piezoelectric Materials","score":0.9973000288009644,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":0.9940000176429749,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/ferroelectricity","display_name":"Ferroelectricity","score":0.7840785980224609},{"id":"https://openalex.org/keywords/bilayer","display_name":"Bilayer","score":0.726637065410614},{"id":"https://openalex.org/keywords/quantum-tunnelling","display_name":"Quantum tunnelling","score":0.7236707806587219},{"id":"https://openalex.org/keywords/work-function","display_name":"Work function","score":0.5927918553352356},{"id":"https://openalex.org/keywords/electrode","display_name":"Electrode","score":0.5812879800796509},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.5490527153015137},{"id":"https://openalex.org/keywords/oxide","display_name":"Oxide","score":0.517693281173706},{"id":"https://openalex.org/keywords/tunnel-junction","display_name":"Tunnel junction","score":0.4708786904811859},{"id":"https://openalex.org/keywords/dielectric","display_name":"Dielectric","score":0.46401986479759216},{"id":"https://openalex.org/keywords/metal","display_name":"Metal","score":0.4619385004043579},{"id":"https://openalex.org/keywords/layer","display_name":"Layer (electronics)","score":0.4611826539039612},{"id":"https://openalex.org/keywords/scaling","display_name":"Scaling","score":0.4333876967430115},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.4272492229938507},{"id":"https://openalex.org/keywords/hysteresis","display_name":"Hysteresis","score":0.42343825101852417},{"id":"https://openalex.org/keywords/condensed-matter-physics","display_name":"Condensed matter physics","score":0.37706881761550903},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.34635645151138306},{"id":"https://openalex.org/keywords/chemistry","display_name":"Chemistry","score":0.2654287815093994},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.2522856593132019},{"id":"https://openalex.org/keywords/membrane","display_name":"Membrane","score":0.16019466519355774},{"id":"https://openalex.org/keywords/physical-chemistry","display_name":"Physical chemistry","score":0.08692499995231628},{"id":"https://openalex.org/keywords/mathematics","display_name":"Mathematics","score":0.08011332154273987}],"concepts":[{"id":"https://openalex.org/C79090758","wikidata":"https://www.wikidata.org/wiki/Q1045739","display_name":"Ferroelectricity","level":3,"score":0.7840785980224609},{"id":"https://openalex.org/C192157962","wikidata":"https://www.wikidata.org/wiki/Q4087243","display_name":"Bilayer","level":3,"score":0.726637065410614},{"id":"https://openalex.org/C120398109","wikidata":"https://www.wikidata.org/wiki/Q175751","display_name":"Quantum tunnelling","level":2,"score":0.7236707806587219},{"id":"https://openalex.org/C115235246","wikidata":"https://www.wikidata.org/wiki/Q783800","display_name":"Work function","level":3,"score":0.5927918553352356},{"id":"https://openalex.org/C17525397","wikidata":"https://www.wikidata.org/wiki/Q176140","display_name":"Electrode","level":2,"score":0.5812879800796509},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5490527153015137},{"id":"https://openalex.org/C2779851234","wikidata":"https://www.wikidata.org/wiki/Q50690","display_name":"Oxide","level":2,"score":0.517693281173706},{"id":"https://openalex.org/C83408046","wikidata":"https://www.wikidata.org/wiki/Q3183536","display_name":"Tunnel junction","level":3,"score":0.4708786904811859},{"id":"https://openalex.org/C133386390","wikidata":"https://www.wikidata.org/wiki/Q184996","display_name":"Dielectric","level":2,"score":0.46401986479759216},{"id":"https://openalex.org/C544153396","wikidata":"https://www.wikidata.org/wiki/Q11426","display_name":"Metal","level":2,"score":0.4619385004043579},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.4611826539039612},{"id":"https://openalex.org/C99844830","wikidata":"https://www.wikidata.org/wiki/Q102441924","display_name":"Scaling","level":2,"score":0.4333876967430115},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.4272492229938507},{"id":"https://openalex.org/C123299182","wikidata":"https://www.wikidata.org/wiki/Q190837","display_name":"Hysteresis","level":2,"score":0.42343825101852417},{"id":"https://openalex.org/C26873012","wikidata":"https://www.wikidata.org/wiki/Q214781","display_name":"Condensed matter physics","level":1,"score":0.37706881761550903},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.34635645151138306},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.2654287815093994},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.2522856593132019},{"id":"https://openalex.org/C41625074","wikidata":"https://www.wikidata.org/wiki/Q176088","display_name":"Membrane","level":2,"score":0.16019466519355774},{"id":"https://openalex.org/C147789679","wikidata":"https://www.wikidata.org/wiki/Q11372","display_name":"Physical chemistry","level":1,"score":0.08692499995231628},{"id":"https://openalex.org/C33923547","wikidata":"https://www.wikidata.org/wiki/Q395","display_name":"Mathematics","level":0,"score":0.08011332154273987},{"id":"https://openalex.org/C55493867","wikidata":"https://www.wikidata.org/wiki/Q7094","display_name":"Biochemistry","level":1,"score":0.0},{"id":"https://openalex.org/C2524010","wikidata":"https://www.wikidata.org/wiki/Q8087","display_name":"Geometry","level":1,"score":0.0},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/drc58590.2023.10187018","is_oa":false,"landing_page_url":"https://doi.org/10.1109/drc58590.2023.10187018","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2023 Device Research Conference (DRC)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":4,"referenced_works":["https://openalex.org/W1995854703","https://openalex.org/W2963059610","https://openalex.org/W3170360744","https://openalex.org/W4292308114"],"related_works":["https://openalex.org/W1988447020","https://openalex.org/W2945723823","https://openalex.org/W2795319754","https://openalex.org/W2810195915","https://openalex.org/W4289869354","https://openalex.org/W2070240435","https://openalex.org/W1959075996","https://openalex.org/W2410108108","https://openalex.org/W4362650827","https://openalex.org/W2395010464"],"abstract_inverted_index":{"Ferroelectric":[0],"tunnel":[1],"junctions":[2],"(FTJs)":[3],"are":[4],"non-volatile":[5],"devices":[6],"in":[7],"which":[8],"the":[9,15,62,67,74,113,119],"read":[10],"current":[11,120],"is":[12,105,128],"controlled":[13],"by":[14],"polarisation":[16,96],"state":[17,76],"of":[18,73,85,122],"a":[19,33,93,108],"ferroelectric":[20],"(FE)":[21],"layer":[22,35],"[1].":[23],"Bilayer":[24],"FTJs":[25,124],"based":[26],"on":[27,47],"hafnium":[28],"zirconium":[29],"oxide":[30],"(HZO)":[31],"and":[32,56,71,135],"dielectric":[34],"(DE,":[36],"here":[37],"Al":[38],"<inf":[39,43],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[40,44,137],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">2</inf>":[41],"O":[42],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">3</inf>":[45],")":[46],"metallic":[48],"electrodes":[49],"show":[50],"promise":[51],"for":[52],"embdedded":[53],"Non-Volatile":[54],"Memory":[55],"BEOL":[57],"integration":[58],"[2],":[59],"[3].":[60],"However,":[61],"DE":[63,83,126],"thickness":[64,84],"impacts":[65],"both":[66],"FTJ":[68],"properties":[69],"[4]":[70],"stability":[72],"FE":[75],"[5].":[77],"Previous":[78],"research":[79],"indicated":[80],"an":[81],"optimal":[82],"2-3":[86],"nm":[87],"[4],":[88],"but":[89],"this":[90],"leads":[91],"to":[92,111,131],"deleterious":[94],"rapid":[95],"loss":[97],"[6].":[98],"Here,":[99],"electrode":[100],"work":[101],"function":[102],"(WF)":[103],"engineering":[104],"presented":[106],"as":[107],"suitable":[109],"measure":[110],"reduce":[112],"tunneling":[114],"barrier":[115],"height,":[116],"thus":[117],"improving":[118],"density":[121],"bilayer":[123],"[7].":[125],"scaling":[127],"also":[129],"proposed":[130],"retain":[132],"high":[133],"TER":[134],"<tex":[136],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">$J_{on}-J_{off}$</tex>":[138],"at":[139],"reduced":[140],"operating":[141],"voltages.":[142]},"counts_by_year":[{"year":2025,"cited_by_count":1},{"year":2024,"cited_by_count":4}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}