{"id":"https://openalex.org/W4385221015","doi":"https://doi.org/10.1109/drc58590.2023.10186916","title":"Precise V<sub>TH</sub> Control of MFSFET with 5 nm-thick FeND-HfO<sub>2</sub> Realized by Kr-Plasma Sputtering for Pt Gate Electrode Deposition","display_name":"Precise V<sub>TH</sub> Control of MFSFET with 5 nm-thick FeND-HfO<sub>2</sub> Realized by Kr-Plasma Sputtering for Pt Gate Electrode Deposition","publication_year":2023,"publication_date":"2023-06-25","ids":{"openalex":"https://openalex.org/W4385221015","doi":"https://doi.org/10.1109/drc58590.2023.10186916"},"language":"en","primary_location":{"id":"doi:10.1109/drc58590.2023.10186916","is_oa":false,"landing_page_url":"https://doi.org/10.1109/drc58590.2023.10186916","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2023 Device Research Conference (DRC)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5109184395","display_name":"S. Ohmi","orcid":null},"institutions":[{"id":"https://openalex.org/I114531698","display_name":"Tokyo Institute of Technology","ror":"https://ror.org/0112mx960","country_code":"JP","type":"education","lineage":["https://openalex.org/I114531698"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"S. Ohmi","raw_affiliation_strings":["Tokyo Institute of Technology,Department of Electrical and Electronic Engineering,Yokohama,Japan,226-8502"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Tokyo Institute of Technology,Department of Electrical and Electronic Engineering,Yokohama,Japan,226-8502","institution_ids":["https://openalex.org/I114531698"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5082298405","display_name":"Masakazu Tanuma","orcid":null},"institutions":[{"id":"https://openalex.org/I114531698","display_name":"Tokyo Institute of Technology","ror":"https://ror.org/0112mx960","country_code":"JP","type":"education","lineage":["https://openalex.org/I114531698"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"M. Tanuma","raw_affiliation_strings":["Tokyo Institute of Technology,Department of Electrical and Electronic Engineering,Yokohama,Japan,226-8502"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Tokyo Institute of Technology,Department of Electrical and Electronic Engineering,Yokohama,Japan,226-8502","institution_ids":["https://openalex.org/I114531698"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5103523224","display_name":"J.W. Shin","orcid":null},"institutions":[{"id":"https://openalex.org/I114531698","display_name":"Tokyo Institute of Technology","ror":"https://ror.org/0112mx960","country_code":"JP","type":"education","lineage":["https://openalex.org/I114531698"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"J.W. Shin","raw_affiliation_strings":["Tokyo Institute of Technology,Department of Electrical and Electronic Engineering,Yokohama,Japan,226-8502"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Tokyo Institute of Technology,Department of Electrical and Electronic Engineering,Yokohama,Japan,226-8502","institution_ids":["https://openalex.org/I114531698"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":3,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.2454,"has_fulltext":false,"cited_by_count":2,"citation_normalized_percentile":{"value":0.52199686,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":94,"max":96},"biblio":{"volume":null,"issue":null,"first_page":null,"last_page":null},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9991999864578247,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":0.9962000250816345,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/ferroelectricity","display_name":"Ferroelectricity","score":0.5145432353019714},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.48510634899139404},{"id":"https://openalex.org/keywords/electrode","display_name":"Electrode","score":0.4413762390613556},{"id":"https://openalex.org/keywords/analytical-chemistry","display_name":"Analytical Chemistry (journal)","score":0.35122284293174744},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.3106486201286316},{"id":"https://openalex.org/keywords/chemistry","display_name":"Chemistry","score":0.2539054751396179},{"id":"https://openalex.org/keywords/physical-chemistry","display_name":"Physical chemistry","score":0.1544625461101532},{"id":"https://openalex.org/keywords/dielectric","display_name":"Dielectric","score":0.15054908394813538},{"id":"https://openalex.org/keywords/organic-chemistry","display_name":"Organic chemistry","score":0.147070974111557}],"concepts":[{"id":"https://openalex.org/C79090758","wikidata":"https://www.wikidata.org/wiki/Q1045739","display_name":"Ferroelectricity","level":3,"score":0.5145432353019714},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.48510634899139404},{"id":"https://openalex.org/C17525397","wikidata":"https://www.wikidata.org/wiki/Q176140","display_name":"Electrode","level":2,"score":0.4413762390613556},{"id":"https://openalex.org/C113196181","wikidata":"https://www.wikidata.org/wiki/Q485223","display_name":"Analytical Chemistry (journal)","level":2,"score":0.35122284293174744},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.3106486201286316},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.2539054751396179},{"id":"https://openalex.org/C147789679","wikidata":"https://www.wikidata.org/wiki/Q11372","display_name":"Physical chemistry","level":1,"score":0.1544625461101532},{"id":"https://openalex.org/C133386390","wikidata":"https://www.wikidata.org/wiki/Q184996","display_name":"Dielectric","level":2,"score":0.15054908394813538},{"id":"https://openalex.org/C178790620","wikidata":"https://www.wikidata.org/wiki/Q11351","display_name":"Organic chemistry","level":1,"score":0.147070974111557}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/drc58590.2023.10186916","is_oa":false,"landing_page_url":"https://doi.org/10.1109/drc58590.2023.10186916","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2023 Device Research Conference (DRC)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":1,"referenced_works":["https://openalex.org/W3137366391"],"related_works":["https://openalex.org/W4246450666","https://openalex.org/W2898370298","https://openalex.org/W4388998267","https://openalex.org/W4390401159","https://openalex.org/W2795319754","https://openalex.org/W2744391499","https://openalex.org/W3120461830","https://openalex.org/W4230250635","https://openalex.org/W3041790586","https://openalex.org/W2018879842"],"abstract_inverted_index":{"Ferroelectric":[0],"HfO":[1,40],"<inf":[2,6,41,51,73,101,119],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[3,7,42,52,74,102,120],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">2</inf>":[4,8,43,75,121],"(Fe-HfO":[5],")":[9,54],"doped":[10],"with":[11,37,69],"Zr":[12],"etc.":[13],"is":[14,81],"widely":[15],"investigated":[16,98],"for":[17,61,110],"the":[18,35,47,58,67,78,87,99],"metal-ferroelectrics-Si":[19],"field-effect":[20],"transistor":[21],"(MFSFET)":[22],"nonvolatile":[23],"memory":[24,63],"because":[25],"of":[26,105],"its":[27],"Si":[28],"compatibility":[29],"[1],":[30],"[2].":[31],"We":[32],"have":[33,97],"reported":[34],"MFSFET":[36,68,106],"ferroelectric":[38],"nondoped":[39],"(FeND-HfO2)":[44],"to":[45,83],"suppress":[46],"threshold":[48],"voltage":[49],"(V":[50],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">TH</inf>":[53,103],"variation":[55],"and":[56],"decrease":[57],"thermal":[59],"budget":[60],"analog":[62],"application":[64],"[3]\u2013[5].":[65],"Although":[66],"5":[70,116],"nm-thick":[71,117],"FeND-HfO":[72,118],"was":[76],"realized,":[77],"plasma":[79],"damage":[80],"necessary":[82],"be":[84],"decreased":[85],"during":[86],"Pt":[88,111],"gate":[89,112],"electrode":[90,113],"deposition":[91,114],"[6].":[92],"In":[93],"this":[94],"paper,":[95],"we":[96],"V":[100],"control":[104],"utilizing":[107],"Kr-plasma":[108],"sputtering":[109],"on":[115],".":[122]},"counts_by_year":[{"year":2024,"cited_by_count":2}],"updated_date":"2026-06-11T09:08:48.828518","created_date":"2025-10-10T00:00:00"}