{"id":"https://openalex.org/W4292348179","doi":"https://doi.org/10.1109/drc55272.2022.9855821","title":"Breakdown Voltage Enhancement of GaN diodes with High-k Dielectric","display_name":"Breakdown Voltage Enhancement of GaN diodes with High-k Dielectric","publication_year":2022,"publication_date":"2022-06-26","ids":{"openalex":"https://openalex.org/W4292348179","doi":"https://doi.org/10.1109/drc55272.2022.9855821"},"language":"en","primary_location":{"id":"doi:10.1109/drc55272.2022.9855821","is_oa":false,"landing_page_url":"https://doi.org/10.1109/drc55272.2022.9855821","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2022 Device Research Conference (DRC)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5009110169","display_name":"Vishank Talesara","orcid":"https://orcid.org/0000-0002-0136-9817"},"institutions":[{"id":"https://openalex.org/I52357470","display_name":"The Ohio State University","ror":"https://ror.org/00rs6vg23","country_code":"US","type":"education","lineage":["https://openalex.org/I52357470"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Vishank Talesara","raw_affiliation_strings":["The Ohio State University,Department of Electrical and Computer Engineering,Columbus,OH,USA,43210"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"The Ohio State University,Department of Electrical and Computer Engineering,Columbus,OH,USA,43210","institution_ids":["https://openalex.org/I52357470"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100319909","display_name":"Yuxuan Zhang","orcid":"https://orcid.org/0000-0002-5052-4342"},"institutions":[{"id":"https://openalex.org/I52357470","display_name":"The Ohio State University","ror":"https://ror.org/00rs6vg23","country_code":"US","type":"education","lineage":["https://openalex.org/I52357470"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Yuxuan Zhang","raw_affiliation_strings":["The Ohio State University,Department of Electrical and Computer Engineering,Columbus,OH,USA,43210"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"The Ohio State University,Department of Electrical and Computer Engineering,Columbus,OH,USA,43210","institution_ids":["https://openalex.org/I52357470"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5007633048","display_name":"Junao Cheng","orcid":"https://orcid.org/0000-0001-7725-1084"},"institutions":[{"id":"https://openalex.org/I52357470","display_name":"The Ohio State University","ror":"https://ror.org/00rs6vg23","country_code":"US","type":"education","lineage":["https://openalex.org/I52357470"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Junao Cheng","raw_affiliation_strings":["The Ohio State University,Department of Electrical and Computer Engineering,Columbus,OH,USA,43210"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"The Ohio State University,Department of Electrical and Computer Engineering,Columbus,OH,USA,43210","institution_ids":["https://openalex.org/I52357470"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5010400790","display_name":"Hongping Zhao","orcid":"https://orcid.org/0000-0002-5169-5290"},"institutions":[{"id":"https://openalex.org/I52357470","display_name":"The Ohio State University","ror":"https://ror.org/00rs6vg23","country_code":"US","type":"education","lineage":["https://openalex.org/I52357470"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Hongping Zhao","raw_affiliation_strings":["The Ohio State University,Department of Electrical and Computer Engineering,Columbus,OH,USA,43210","Department of Materials Science and Engineering, The Ohio State University, Columbus, OH, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"The Ohio State University,Department of Electrical and Computer Engineering,Columbus,OH,USA,43210","institution_ids":["https://openalex.org/I52357470"]},{"raw_affiliation_string":"Department of Materials Science and Engineering, The Ohio State University, Columbus, OH, USA","institution_ids":["https://openalex.org/I52357470"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5030917506","display_name":"Wu Lu","orcid":"https://orcid.org/0000-0001-6776-9082"},"institutions":[{"id":"https://openalex.org/I52357470","display_name":"The Ohio State University","ror":"https://ror.org/00rs6vg23","country_code":"US","type":"education","lineage":["https://openalex.org/I52357470"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Wu Lu","raw_affiliation_strings":["The Ohio State University,Department of Electrical and Computer Engineering,Columbus,OH,USA,43210"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"The Ohio State University,Department of Electrical and Computer Engineering,Columbus,OH,USA,43210","institution_ids":["https://openalex.org/I52357470"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":5,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.07251118,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"2"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12529","display_name":"Ga2O3 and related materials","score":0.9988999962806702,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9987000226974487,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/passivation","display_name":"Passivation","score":0.8757829666137695},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.8247661590576172},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.7776815891265869},{"id":"https://openalex.org/keywords/electric-field","display_name":"Electric field","score":0.729072630405426},{"id":"https://openalex.org/keywords/breakdown-voltage","display_name":"Breakdown voltage","score":0.7133975028991699},{"id":"https://openalex.org/keywords/gallium-nitride","display_name":"Gallium nitride","score":0.5740441083908081},{"id":"https://openalex.org/keywords/dielectric","display_name":"Dielectric","score":0.5735774040222168},{"id":"https://openalex.org/keywords/high-voltage","display_name":"High voltage","score":0.5187302231788635},{"id":"https://openalex.org/keywords/wide-bandgap-semiconductor","display_name":"Wide-bandgap semiconductor","score":0.5133501887321472},{"id":"https://openalex.org/keywords/diode","display_name":"Diode","score":0.47887271642684937},{"id":"https://openalex.org/keywords/layer","display_name":"Layer (electronics)","score":0.3154914975166321},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.3149963617324829},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.3024645447731018},{"id":"https://openalex.org/keywords/composite-material","display_name":"Composite material","score":0.16512927412986755}],"concepts":[{"id":"https://openalex.org/C33574316","wikidata":"https://www.wikidata.org/wiki/Q917260","display_name":"Passivation","level":3,"score":0.8757829666137695},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.8247661590576172},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.7776815891265869},{"id":"https://openalex.org/C60799052","wikidata":"https://www.wikidata.org/wiki/Q46221","display_name":"Electric field","level":2,"score":0.729072630405426},{"id":"https://openalex.org/C119321828","wikidata":"https://www.wikidata.org/wiki/Q1267190","display_name":"Breakdown voltage","level":3,"score":0.7133975028991699},{"id":"https://openalex.org/C2778871202","wikidata":"https://www.wikidata.org/wiki/Q411713","display_name":"Gallium nitride","level":3,"score":0.5740441083908081},{"id":"https://openalex.org/C133386390","wikidata":"https://www.wikidata.org/wiki/Q184996","display_name":"Dielectric","level":2,"score":0.5735774040222168},{"id":"https://openalex.org/C88182573","wikidata":"https://www.wikidata.org/wiki/Q1139740","display_name":"High voltage","level":3,"score":0.5187302231788635},{"id":"https://openalex.org/C189278905","wikidata":"https://www.wikidata.org/wiki/Q2157708","display_name":"Wide-bandgap semiconductor","level":2,"score":0.5133501887321472},{"id":"https://openalex.org/C78434282","wikidata":"https://www.wikidata.org/wiki/Q11656","display_name":"Diode","level":2,"score":0.47887271642684937},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.3154914975166321},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.3149963617324829},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3024645447731018},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.16512927412986755},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/drc55272.2022.9855821","is_oa":false,"landing_page_url":"https://doi.org/10.1109/drc55272.2022.9855821","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2022 Device Research Conference (DRC)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7","score":0.8100000023841858}],"awards":[{"id":"https://openalex.org/G6862321272","display_name":null,"funder_award_id":"FY18/FY19","funder_id":"https://openalex.org/F4320332360","funder_display_name":"Office of Energy Efficiency and Renewable Energy"},{"id":"https://openalex.org/G7126721623","display_name":null,"funder_award_id":"DE-AR0001036","funder_id":"https://openalex.org/F4320332276","funder_display_name":"Advanced Research Projects Agency - Energy"}],"funders":[{"id":"https://openalex.org/F4320306084","display_name":"U.S. Department of Energy","ror":"https://ror.org/01bj3aw27"},{"id":"https://openalex.org/F4320332276","display_name":"Advanced Research Projects Agency - Energy","ror":"https://ror.org/03q1rgc19"},{"id":"https://openalex.org/F4320332360","display_name":"Office of Energy Efficiency and Renewable Energy","ror":"https://ror.org/02xznz413"}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":0,"referenced_works":[],"related_works":["https://openalex.org/W2015866014","https://openalex.org/W2000487630","https://openalex.org/W2654716541","https://openalex.org/W1988167421","https://openalex.org/W2109359929","https://openalex.org/W2037936622","https://openalex.org/W2533157014","https://openalex.org/W4297582192","https://openalex.org/W4289782876","https://openalex.org/W4385624134"],"abstract_inverted_index":{"Gallium":[0],"nitride":[1],"(GaN)":[2],"has":[3],"the":[4,31,51,71,79,82,86,96,111,115,122],"great":[5],"potential":[6],"for":[7,21,136],"high-power":[8,22],"devices":[9,164],"due":[10],"to":[11,43,54,94],"its":[12],"wide":[13],"bandgap":[14],"and":[15,34,64,92],"high":[16,39,45,89],"breakdown":[17,46,137,143],"field.":[18],"In":[19,107],"particular":[20],"GaN":[23,147],"pn":[24],"diodes,":[25],"critical":[26,72],"field":[27,49,65,69,74,91,113,123],"is":[28,75,104],"noticed":[29],"at":[30,37,50,78],"p-n":[32,148],"interface":[33],"electrode":[35],"edges":[36,52],"a":[38,131],"reverse":[40],"bias.":[41],"Therefore,":[42],"achieve":[44],"voltage,":[47],"electric":[48,73,90,112],"need":[53],"be":[55],"decreased.":[56],"Edge":[57],"termination":[58],"techniques":[59],"such":[60,108],"as":[61],"guard":[62],"rings":[63],"plate":[66],"help":[67],"with":[68,150,163,165],"management,":[70],"still":[76],"located":[77],"edge":[80],"of":[81,88,101],"electrode.":[83],"To":[84,120],"decrease":[85],"effects":[87],"also":[93],"reduce":[95],"surface":[97],"leakage":[98],"current,":[99],"addition":[100],"passivation":[102,116,159,170],"layer":[103,117,135],"generally":[105],"used.":[106],"device":[109],"structures,":[110],"in":[114,126,161],"decreases":[118],"abruptly.":[119],"mitigate":[121],"crowding":[124],"effect,":[125],"this":[127],"work,":[128],"we":[129],"implemented":[130],"thin":[132],"high-k":[133,151],"dielectric":[134,152],"voltage":[138,144],"enhancement.":[139],"We":[140],"show":[141],"significant":[142],"improvement":[145],"on":[146],"diodes":[149],"(Barium":[153],"titanate,":[154],"BTO,":[155],"\u03b5~":[156],"180)/spin-on-glass":[157],"(SOG)":[158],"layers":[160],"comparison":[162],"only":[166],"low-k":[167],"(3.9)":[168],"SOG":[169],"layer.":[171]},"counts_by_year":[],"updated_date":"2026-06-11T09:08:48.828518","created_date":"2025-10-10T00:00:00"}