{"id":"https://openalex.org/W4292388133","doi":"https://doi.org/10.1109/drc55272.2022.9855818","title":"Movement of Current Filaments and its Impact on Avalanche Robustness in Vertical GaN P-N diode Under UIS stress","display_name":"Movement of Current Filaments and its Impact on Avalanche Robustness in Vertical GaN P-N diode Under UIS stress","publication_year":2022,"publication_date":"2022-06-26","ids":{"openalex":"https://openalex.org/W4292388133","doi":"https://doi.org/10.1109/drc55272.2022.9855818"},"language":"en","primary_location":{"id":"doi:10.1109/drc55272.2022.9855818","is_oa":false,"landing_page_url":"https://doi.org/10.1109/drc55272.2022.9855818","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2022 Device Research Conference (DRC)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5057334057","display_name":"Bhawani Shankar","orcid":"https://orcid.org/0000-0002-6674-3267"},"institutions":[{"id":"https://openalex.org/I97018004","display_name":"Stanford University","ror":"https://ror.org/00f54p054","country_code":"US","type":"education","lineage":["https://openalex.org/I97018004"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"Bhawani Shankar","raw_affiliation_strings":["Stanford University,WBG-Lab, Electrical Engineering,CA,USA,94305"],"affiliations":[{"raw_affiliation_string":"Stanford University,WBG-Lab, Electrical Engineering,CA,USA,94305","institution_ids":["https://openalex.org/I97018004"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5023656099","display_name":"Ke Zeng","orcid":"https://orcid.org/0000-0001-5619-6418"},"institutions":[{"id":"https://openalex.org/I97018004","display_name":"Stanford University","ror":"https://ror.org/00f54p054","country_code":"US","type":"education","lineage":["https://openalex.org/I97018004"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Ke Zeng","raw_affiliation_strings":["Stanford University,WBG-Lab, Electrical Engineering,CA,USA,94305"],"affiliations":[{"raw_affiliation_string":"Stanford University,WBG-Lab, Electrical Engineering,CA,USA,94305","institution_ids":["https://openalex.org/I97018004"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5043412956","display_name":"Brendan Gunning","orcid":"https://orcid.org/0000-0002-0497-5388"},"institutions":[{"id":"https://openalex.org/I4210104735","display_name":"Sandia National Laboratories","ror":"https://ror.org/01apwpt12","country_code":"US","type":"facility","lineage":["https://openalex.org/I1330989302","https://openalex.org/I198811213","https://openalex.org/I4210104735"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Brendan Gunning","raw_affiliation_strings":["Sandia National Labs,Albuquerque,NM,USA,87123"],"affiliations":[{"raw_affiliation_string":"Sandia National Labs,Albuquerque,NM,USA,87123","institution_ids":["https://openalex.org/I4210104735"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5074326638","display_name":"Rafael Perez Martinez","orcid":"https://orcid.org/0000-0001-6488-1247"},"institutions":[{"id":"https://openalex.org/I97018004","display_name":"Stanford University","ror":"https://ror.org/00f54p054","country_code":"US","type":"education","lineage":["https://openalex.org/I97018004"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Rafael Perez Martinez","raw_affiliation_strings":["Stanford University,WBG-Lab, Electrical Engineering,CA,USA,94305"],"affiliations":[{"raw_affiliation_string":"Stanford University,WBG-Lab, Electrical Engineering,CA,USA,94305","institution_ids":["https://openalex.org/I97018004"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5082847598","display_name":"Chuanzhe Meng","orcid":null},"institutions":[{"id":"https://openalex.org/I97018004","display_name":"Stanford University","ror":"https://ror.org/00f54p054","country_code":"US","type":"education","lineage":["https://openalex.org/I97018004"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Chuanzhe Meng","raw_affiliation_strings":["Stanford University,WBG-Lab, Electrical Engineering,CA,USA,94305"],"affiliations":[{"raw_affiliation_string":"Stanford University,WBG-Lab, Electrical Engineering,CA,USA,94305","institution_ids":["https://openalex.org/I97018004"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5020266205","display_name":"Jack Flicker","orcid":"https://orcid.org/0000-0002-1223-2154"},"institutions":[{"id":"https://openalex.org/I4210104735","display_name":"Sandia National Laboratories","ror":"https://ror.org/01apwpt12","country_code":"US","type":"facility","lineage":["https://openalex.org/I1330989302","https://openalex.org/I198811213","https://openalex.org/I4210104735"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Jack Flicker","raw_affiliation_strings":["Sandia National Labs,Albuquerque,NM,USA,87123"],"affiliations":[{"raw_affiliation_string":"Sandia National Labs,Albuquerque,NM,USA,87123","institution_ids":["https://openalex.org/I4210104735"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5054044035","display_name":"Andrew Binder","orcid":"https://orcid.org/0000-0002-6649-2816"},"institutions":[{"id":"https://openalex.org/I4210104735","display_name":"Sandia National Laboratories","ror":"https://ror.org/01apwpt12","country_code":"US","type":"facility","lineage":["https://openalex.org/I1330989302","https://openalex.org/I198811213","https://openalex.org/I4210104735"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Andrew Binder","raw_affiliation_strings":["Sandia National Labs,Albuquerque,NM,USA,87123"],"affiliations":[{"raw_affiliation_string":"Sandia National Labs,Albuquerque,NM,USA,87123","institution_ids":["https://openalex.org/I4210104735"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5049176654","display_name":"Jeramy Ray Dickerson","orcid":"https://orcid.org/0000-0002-7954-542X"},"institutions":[{"id":"https://openalex.org/I4210104735","display_name":"Sandia National Laboratories","ror":"https://ror.org/01apwpt12","country_code":"US","type":"facility","lineage":["https://openalex.org/I1330989302","https://openalex.org/I198811213","https://openalex.org/I4210104735"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Jeramy Ray Dickerson","raw_affiliation_strings":["Sandia National Labs,Albuquerque,NM,USA,87123"],"affiliations":[{"raw_affiliation_string":"Sandia National Labs,Albuquerque,NM,USA,87123","institution_ids":["https://openalex.org/I4210104735"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5006920397","display_name":"Robert Kaplar","orcid":"https://orcid.org/0000-0002-7928-9104"},"institutions":[{"id":"https://openalex.org/I4210104735","display_name":"Sandia National Laboratories","ror":"https://ror.org/01apwpt12","country_code":"US","type":"facility","lineage":["https://openalex.org/I1330989302","https://openalex.org/I198811213","https://openalex.org/I4210104735"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Robert Kaplar","raw_affiliation_strings":["Sandia National Labs,Albuquerque,NM,USA,87123"],"affiliations":[{"raw_affiliation_string":"Sandia National Labs,Albuquerque,NM,USA,87123","institution_ids":["https://openalex.org/I4210104735"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5036450839","display_name":"Srabanti Chowdhury","orcid":"https://orcid.org/0000-0001-8367-0461"},"institutions":[{"id":"https://openalex.org/I97018004","display_name":"Stanford University","ror":"https://ror.org/00f54p054","country_code":"US","type":"education","lineage":["https://openalex.org/I97018004"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Srabanti Chowdhury","raw_affiliation_strings":["Stanford University,WBG-Lab, Electrical Engineering,CA,USA,94305"],"affiliations":[{"raw_affiliation_string":"Stanford University,WBG-Lab, Electrical Engineering,CA,USA,94305","institution_ids":["https://openalex.org/I97018004"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":10,"corresponding_author_ids":["https://openalex.org/A5057334057"],"corresponding_institution_ids":["https://openalex.org/I97018004"],"apc_list":null,"apc_paid":null,"fwci":0.4022,"has_fulltext":false,"cited_by_count":3,"citation_normalized_percentile":{"value":0.58447299,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":96},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"2"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9944999814033508,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12529","display_name":"Ga2O3 and related materials","score":0.9932000041007996,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/diode","display_name":"Diode","score":0.7004063725471497},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.6914857625961304},{"id":"https://openalex.org/keywords/avalanche-breakdown","display_name":"Avalanche breakdown","score":0.6881813406944275},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.6743121147155762},{"id":"https://openalex.org/keywords/avalanche-diode","display_name":"Avalanche diode","score":0.6336126327514648},{"id":"https://openalex.org/keywords/robustness","display_name":"Robustness (evolution)","score":0.595799446105957},{"id":"https://openalex.org/keywords/breakdown-voltage","display_name":"Breakdown voltage","score":0.5790296792984009},{"id":"https://openalex.org/keywords/power-semiconductor-device","display_name":"Power semiconductor device","score":0.49324578046798706},{"id":"https://openalex.org/keywords/gallium-nitride","display_name":"Gallium nitride","score":0.4685284495353699},{"id":"https://openalex.org/keywords/stress","display_name":"Stress (linguistics)","score":0.4513484835624695},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.4484269917011261},{"id":"https://openalex.org/keywords/wide-bandgap-semiconductor","display_name":"Wide-bandgap semiconductor","score":0.4145863652229309},{"id":"https://openalex.org/keywords/junction-temperature","display_name":"Junction temperature","score":0.4126875698566437},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.33824706077575684},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.3117723762989044},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.16717669367790222},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.1488150656223297},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.10092470049858093},{"id":"https://openalex.org/keywords/chemistry","display_name":"Chemistry","score":0.0881521999835968}],"concepts":[{"id":"https://openalex.org/C78434282","wikidata":"https://www.wikidata.org/wiki/Q11656","display_name":"Diode","level":2,"score":0.7004063725471497},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.6914857625961304},{"id":"https://openalex.org/C33652038","wikidata":"https://www.wikidata.org/wiki/Q175906","display_name":"Avalanche breakdown","level":4,"score":0.6881813406944275},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6743121147155762},{"id":"https://openalex.org/C95341827","wikidata":"https://www.wikidata.org/wiki/Q175898","display_name":"Avalanche diode","level":4,"score":0.6336126327514648},{"id":"https://openalex.org/C63479239","wikidata":"https://www.wikidata.org/wiki/Q7353546","display_name":"Robustness (evolution)","level":3,"score":0.595799446105957},{"id":"https://openalex.org/C119321828","wikidata":"https://www.wikidata.org/wiki/Q1267190","display_name":"Breakdown voltage","level":3,"score":0.5790296792984009},{"id":"https://openalex.org/C129014197","wikidata":"https://www.wikidata.org/wiki/Q906544","display_name":"Power semiconductor device","level":3,"score":0.49324578046798706},{"id":"https://openalex.org/C2778871202","wikidata":"https://www.wikidata.org/wiki/Q411713","display_name":"Gallium nitride","level":3,"score":0.4685284495353699},{"id":"https://openalex.org/C21036866","wikidata":"https://www.wikidata.org/wiki/Q181767","display_name":"Stress (linguistics)","level":2,"score":0.4513484835624695},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.4484269917011261},{"id":"https://openalex.org/C189278905","wikidata":"https://www.wikidata.org/wiki/Q2157708","display_name":"Wide-bandgap semiconductor","level":2,"score":0.4145863652229309},{"id":"https://openalex.org/C167781694","wikidata":"https://www.wikidata.org/wiki/Q6311800","display_name":"Junction temperature","level":3,"score":0.4126875698566437},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.33824706077575684},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3117723762989044},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.16717669367790222},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.1488150656223297},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.10092470049858093},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.0881521999835968},{"id":"https://openalex.org/C138885662","wikidata":"https://www.wikidata.org/wiki/Q5891","display_name":"Philosophy","level":0,"score":0.0},{"id":"https://openalex.org/C104317684","wikidata":"https://www.wikidata.org/wiki/Q7187","display_name":"Gene","level":2,"score":0.0},{"id":"https://openalex.org/C41895202","wikidata":"https://www.wikidata.org/wiki/Q8162","display_name":"Linguistics","level":1,"score":0.0},{"id":"https://openalex.org/C55493867","wikidata":"https://www.wikidata.org/wiki/Q7094","display_name":"Biochemistry","level":1,"score":0.0},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/drc55272.2022.9855818","is_oa":false,"landing_page_url":"https://doi.org/10.1109/drc55272.2022.9855818","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2022 Device Research Conference (DRC)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy","score":0.6299999952316284}],"awards":[{"id":"https://openalex.org/G1235997885","display_name":null,"funder_award_id":"014-21-1-2167-NA","funder_id":"https://openalex.org/F4320337345","funder_display_name":"Office of Naval Research"}],"funders":[{"id":"https://openalex.org/F4320332276","display_name":"Advanced Research Projects Agency - Energy","ror":"https://ror.org/03q1rgc19"},{"id":"https://openalex.org/F4320337345","display_name":"Office of Naval Research","ror":"https://ror.org/00rk2pe57"}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":3,"referenced_works":["https://openalex.org/W2015866014","https://openalex.org/W2793170365","https://openalex.org/W4226296951"],"related_works":["https://openalex.org/W2171642780","https://openalex.org/W2151805512","https://openalex.org/W2101068421","https://openalex.org/W2170908383","https://openalex.org/W260021465","https://openalex.org/W1989882053","https://openalex.org/W2090329917","https://openalex.org/W2938457041","https://openalex.org/W2062296688","https://openalex.org/W2039167034"],"abstract_inverted_index":{"Power":[0],"semiconductor":[1],"devices":[2,17,41],"encounter":[3],"stressful":[4],"switching":[5,92],"conditions":[6,135],"in":[7,15,102,152],"power":[8,16],"electronic":[9],"circuits":[10],"[1].":[11],"Therefore,":[12],"avalanche":[13,36,57,83,101,134,153],"capability":[14],"is":[18,24],"highly":[19],"desired,":[20],"and":[21,76,99,125],"its":[22],"study":[23,120],"extremely":[25],"important":[26],"for":[27],"realizing":[28],"robust":[29,46,100],"devices.":[30],"Fortunately,":[31],"GaN":[32,40,53],"P-N":[33,44,54,110,142],"junction":[34],"possess":[35],"capability,":[37],"making":[38],"vertical":[39,52,108,141],"with":[42,56],"intrinsic":[43],"junctions":[45],"against":[47],"breakdown":[48,58],"[2].":[49],"Most":[50],"recently,":[51],"diodes":[55,111],"voltage":[59],"up":[60],"to":[61,121,156],"6":[62],"kV":[63,107,139],"were":[64,72],"reported":[65,97],"[3].":[66],"However,":[67],"most":[68],"of":[69,127,159],"these":[70],"studies":[71],"done":[73],"under":[74,85,144],"DC,":[75],"a":[77],"very":[78],"few":[79],"have":[80],"investigated":[81],"the":[82,123,137,150,157,163],"behavior":[84],"circuit-level":[86],"stresses":[87],"such":[88],"as":[89],"unclamped":[90],"inductive":[91],"(UIS)":[93],"stress.":[94,146,165],"We":[95,147],"previously":[96],"unform":[98],"our":[103,114,119],"in-house":[104],"fabricated":[105],"1.3":[106,138],"GaN-on-GaN":[109,140],"[4].":[112],"In":[113],"present":[115],"work":[116],"we":[117],"extend":[118],"report":[122],"observation":[124],"role":[126],"current":[128,160],"filament":[129],"(microplasma":[130],"tube)":[131],"formed":[132],"during":[133],"using":[136],"diode":[143],"UIS":[145],"infer":[148],"that":[149],"robustness":[151],"increased":[154],"due":[155],"movements":[158],"filaments":[161],"relieving":[162],"thermal":[164]},"counts_by_year":[{"year":2025,"cited_by_count":2},{"year":2024,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}