{"id":"https://openalex.org/W4292388255","doi":"https://doi.org/10.1109/drc55272.2022.9855790","title":"Mobility Enhancement of Monolayer MoS<sub>2</sub> Transistors using Tensile-Stressed Silicon Nitride Capping Layers","display_name":"Mobility Enhancement of Monolayer MoS<sub>2</sub> Transistors using Tensile-Stressed Silicon Nitride Capping Layers","publication_year":2022,"publication_date":"2022-06-26","ids":{"openalex":"https://openalex.org/W4292388255","doi":"https://doi.org/10.1109/drc55272.2022.9855790"},"language":"en","primary_location":{"id":"doi:10.1109/drc55272.2022.9855790","is_oa":false,"landing_page_url":"https://doi.org/10.1109/drc55272.2022.9855790","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2022 Device Research Conference (DRC)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5024354567","display_name":"Marc Jaikissoon","orcid":"https://orcid.org/0000-0001-5102-6348"},"institutions":[{"id":"https://openalex.org/I97018004","display_name":"Stanford University","ror":"https://ror.org/00f54p054","country_code":"US","type":"education","lineage":["https://openalex.org/I97018004"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"Marc Jaikissoon","raw_affiliation_strings":["Stanford University,Electrical Engineering,Stanford,CA,USA,94305"],"affiliations":[{"raw_affiliation_string":"Stanford University,Electrical Engineering,Stanford,CA,USA,94305","institution_ids":["https://openalex.org/I97018004"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5007002858","display_name":"Jerry A. Yang","orcid":"https://orcid.org/0000-0001-5521-8523"},"institutions":[{"id":"https://openalex.org/I97018004","display_name":"Stanford University","ror":"https://ror.org/00f54p054","country_code":"US","type":"education","lineage":["https://openalex.org/I97018004"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Jerry A. Yang","raw_affiliation_strings":["Stanford University,Electrical Engineering,Stanford,CA,USA,94305"],"affiliations":[{"raw_affiliation_string":"Stanford University,Electrical Engineering,Stanford,CA,USA,94305","institution_ids":["https://openalex.org/I97018004"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5014327459","display_name":"Kathryn M. Neilson","orcid":"https://orcid.org/0000-0003-1061-2919"},"institutions":[{"id":"https://openalex.org/I97018004","display_name":"Stanford University","ror":"https://ror.org/00f54p054","country_code":"US","type":"education","lineage":["https://openalex.org/I97018004"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Kathryn M. Neilson","raw_affiliation_strings":["Stanford University,Electrical Engineering,Stanford,CA,USA,94305"],"affiliations":[{"raw_affiliation_string":"Stanford University,Electrical Engineering,Stanford,CA,USA,94305","institution_ids":["https://openalex.org/I97018004"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5051662579","display_name":"Eric Pop","orcid":"https://orcid.org/0000-0003-0436-8534"},"institutions":[{"id":"https://openalex.org/I97018004","display_name":"Stanford University","ror":"https://ror.org/00f54p054","country_code":"US","type":"education","lineage":["https://openalex.org/I97018004"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Eric Pop","raw_affiliation_strings":["Stanford University,Electrical Engineering,Stanford,CA,USA,94305"],"affiliations":[{"raw_affiliation_string":"Stanford University,Electrical Engineering,Stanford,CA,USA,94305","institution_ids":["https://openalex.org/I97018004"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5065754731","display_name":"Krishna C. Saraswat","orcid":"https://orcid.org/0000-0003-1894-6315"},"institutions":[{"id":"https://openalex.org/I97018004","display_name":"Stanford University","ror":"https://ror.org/00f54p054","country_code":"US","type":"education","lineage":["https://openalex.org/I97018004"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Krishna C. Saraswat","raw_affiliation_strings":["Stanford University,Electrical Engineering,Stanford,CA,USA,94305"],"affiliations":[{"raw_affiliation_string":"Stanford University,Electrical Engineering,Stanford,CA,USA,94305","institution_ids":["https://openalex.org/I97018004"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":5,"corresponding_author_ids":["https://openalex.org/A5024354567"],"corresponding_institution_ids":["https://openalex.org/I97018004"],"apc_list":null,"apc_paid":null,"fwci":0.2744,"has_fulltext":false,"cited_by_count":3,"citation_normalized_percentile":{"value":0.52528947,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":95},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"2"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11272","display_name":"Nanowire Synthesis and Applications","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2204","display_name":"Biomedical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/nmos-logic","display_name":"NMOS logic","score":0.6868623495101929},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.6636212468147278},{"id":"https://openalex.org/keywords/strain-engineering","display_name":"Strain engineering","score":0.6519283056259155},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.632230281829834},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.5983614921569824},{"id":"https://openalex.org/keywords/silicon","display_name":"Silicon","score":0.49419930577278137},{"id":"https://openalex.org/keywords/electron-mobility","display_name":"Electron mobility","score":0.4782930016517639},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.47407594323158264},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.33732953667640686},{"id":"https://openalex.org/keywords/topology","display_name":"Topology (electrical circuits)","score":0.32583701610565186},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.31737959384918213},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.0989728569984436},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.09805521368980408}],"concepts":[{"id":"https://openalex.org/C197162436","wikidata":"https://www.wikidata.org/wiki/Q83908","display_name":"NMOS logic","level":4,"score":0.6868623495101929},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.6636212468147278},{"id":"https://openalex.org/C80487327","wikidata":"https://www.wikidata.org/wiki/Q1262549","display_name":"Strain engineering","level":3,"score":0.6519283056259155},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.632230281829834},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5983614921569824},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.49419930577278137},{"id":"https://openalex.org/C106782819","wikidata":"https://www.wikidata.org/wiki/Q6501076","display_name":"Electron mobility","level":2,"score":0.4782930016517639},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.47407594323158264},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.33732953667640686},{"id":"https://openalex.org/C184720557","wikidata":"https://www.wikidata.org/wiki/Q7825049","display_name":"Topology (electrical circuits)","level":2,"score":0.32583701610565186},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.31737959384918213},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0989728569984436},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.09805521368980408}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/drc55272.2022.9855790","is_oa":false,"landing_page_url":"https://doi.org/10.1109/drc55272.2022.9855790","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2022 Device Research Conference (DRC)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7","score":0.5600000023841858}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":6,"referenced_works":["https://openalex.org/W1992591935","https://openalex.org/W2118294059","https://openalex.org/W2124340473","https://openalex.org/W2765336661","https://openalex.org/W3105127144","https://openalex.org/W3119675150"],"related_works":["https://openalex.org/W2147978085","https://openalex.org/W4226016470","https://openalex.org/W2118243209","https://openalex.org/W2954104981","https://openalex.org/W2206937489","https://openalex.org/W2119274842","https://openalex.org/W2129333362","https://openalex.org/W3046452394","https://openalex.org/W4292388255","https://openalex.org/W2003641446"],"abstract_inverted_index":{"Strain":[0],"engineering":[1],"has":[2],"played":[3],"an":[4,36],"important":[5],"role":[6],"in":[7,13,95,123,141,153],"modern":[8],"transistor":[9],"technology,":[10],"improving":[11],"mobility":[12,41,65,97,127],"Si":[14,32,45],"devices":[15],"since":[16],"the":[17,44,96,133],"90":[18],"nm":[19,156],"node.":[20],"Tensile":[21],"silicon":[22],"nitride":[23],"(SiN":[24],"<inf":[25,56,104,112],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[26,57,105,113],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">x</inf>":[27,114],")":[28],"capping":[29,115],"layers":[30],"for":[31,87],"NMOS":[33],"have":[34,63,82],"been":[35],"effective":[37,75],"way":[38],"to":[39,62,84,120,135,150],"enhance":[40],"by":[42,69],"modifying":[43],"band":[46],"structure":[47],"[1].":[48],"2D":[49,89],"semiconductors":[50],"such":[51,88],"as":[52],"mono-layer":[53],"(IL)":[54],"MoS":[55,103],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">2</inf>":[58,106],"are":[59],"also":[60],"predicted":[61],"improved":[64,138],"under":[66],"tensile":[67],"strain,":[68],"reduction":[70],"of":[71,101],"intervalley":[72],"scattering":[73],"and":[74,98,128],"mass":[76],"[2].":[77],"However,":[78],"CMOS-compatible":[79],"strain":[80],"techniques":[81],"yet":[83],"be":[85],"demonstrated":[86],"semiconductors.":[90],"Here,":[91],"we":[92],"demonstrate":[93],"improvement":[94,122],"on-state":[99,129],"current":[100,139,148],"1L":[102],"transistors":[107],"using":[108],"a":[109,154],"high-tensile-stress":[110],"SiN":[111],"layer.":[116],"We":[117],"achieve":[118,136],"up":[119,149],"47%":[121],"back-gated":[124],"FET":[125],"(BG-FET)":[126],"current,":[130],"then":[131],"extend":[132],"technique":[134],"33%":[137],"drive":[140],"top-gated":[142],"FETs":[143],"(TG-FET),":[144],"with":[145],"record":[146],"saturation":[147],"488":[151],"\u00b5A/\u00b5m":[152],"200":[155],"long":[157],"channel.":[158]},"counts_by_year":[{"year":2025,"cited_by_count":1},{"year":2024,"cited_by_count":1},{"year":2023,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}