{"id":"https://openalex.org/W4292348118","doi":"https://doi.org/10.1109/drc55272.2022.9855780","title":"Ultrathin Ferroelectric Nondoped HfO<sub>2</sub> for MFSFET with High-speed and Low-voltage Operation","display_name":"Ultrathin Ferroelectric Nondoped HfO<sub>2</sub> for MFSFET with High-speed and Low-voltage Operation","publication_year":2022,"publication_date":"2022-06-26","ids":{"openalex":"https://openalex.org/W4292348118","doi":"https://doi.org/10.1109/drc55272.2022.9855780"},"language":"en","primary_location":{"id":"doi:10.1109/drc55272.2022.9855780","is_oa":false,"landing_page_url":"https://doi.org/10.1109/drc55272.2022.9855780","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2022 Device Research Conference (DRC)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5103523224","display_name":"J.W. Shin","orcid":null},"institutions":[{"id":"https://openalex.org/I114531698","display_name":"Tokyo Institute of Technology","ror":"https://ror.org/0112mx960","country_code":"JP","type":"education","lineage":["https://openalex.org/I114531698"]}],"countries":["JP"],"is_corresponding":true,"raw_author_name":"J.W. Shin","raw_affiliation_strings":["Tokyo Institute of Technology,Department of Electrical and Electronic Engineering,Yokohama,Japan,226-8502"],"affiliations":[{"raw_affiliation_string":"Tokyo Institute of Technology,Department of Electrical and Electronic Engineering,Yokohama,Japan,226-8502","institution_ids":["https://openalex.org/I114531698"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5082298405","display_name":"Masakazu Tanuma","orcid":null},"institutions":[{"id":"https://openalex.org/I114531698","display_name":"Tokyo Institute of Technology","ror":"https://ror.org/0112mx960","country_code":"JP","type":"education","lineage":["https://openalex.org/I114531698"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"M. Tanuma","raw_affiliation_strings":["Tokyo Institute of Technology,Department of Electrical and Electronic Engineering,Yokohama,Japan,226-8502"],"affiliations":[{"raw_affiliation_string":"Tokyo Institute of Technology,Department of Electrical and Electronic Engineering,Yokohama,Japan,226-8502","institution_ids":["https://openalex.org/I114531698"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5032657871","display_name":"Jooyoung Pyo","orcid":"https://orcid.org/0000-0002-6743-9259"},"institutions":[{"id":"https://openalex.org/I114531698","display_name":"Tokyo Institute of Technology","ror":"https://ror.org/0112mx960","country_code":"JP","type":"education","lineage":["https://openalex.org/I114531698"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"J. Pyo","raw_affiliation_strings":["Tokyo Institute of Technology,Department of Electrical and Electronic Engineering,Yokohama,Japan,226-8502"],"affiliations":[{"raw_affiliation_string":"Tokyo Institute of Technology,Department of Electrical and Electronic Engineering,Yokohama,Japan,226-8502","institution_ids":["https://openalex.org/I114531698"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5109184395","display_name":"S. Ohmi","orcid":null},"institutions":[{"id":"https://openalex.org/I114531698","display_name":"Tokyo Institute of Technology","ror":"https://ror.org/0112mx960","country_code":"JP","type":"education","lineage":["https://openalex.org/I114531698"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"S. Ohmi","raw_affiliation_strings":["Tokyo Institute of Technology,Department of Electrical and Electronic Engineering,Yokohama,Japan,226-8502"],"affiliations":[{"raw_affiliation_string":"Tokyo Institute of Technology,Department of Electrical and Electronic Engineering,Yokohama,Japan,226-8502","institution_ids":["https://openalex.org/I114531698"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":4,"corresponding_author_ids":["https://openalex.org/A5103523224"],"corresponding_institution_ids":["https://openalex.org/I114531698"],"apc_list":null,"apc_paid":null,"fwci":0.2744,"has_fulltext":false,"cited_by_count":3,"citation_normalized_percentile":{"value":0.52521999,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":96,"max":97},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"2"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9995999932289124,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9987000226974487,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/ferroelectricity","display_name":"Ferroelectricity","score":0.7974674701690674},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.6237788796424866},{"id":"https://openalex.org/keywords/crystallization","display_name":"Crystallization","score":0.5206788778305054},{"id":"https://openalex.org/keywords/sputtering","display_name":"Sputtering","score":0.41369086503982544},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.40158307552337646},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.2688107490539551},{"id":"https://openalex.org/keywords/dielectric","display_name":"Dielectric","score":0.21192988753318787},{"id":"https://openalex.org/keywords/thin-film","display_name":"Thin film","score":0.20303142070770264},{"id":"https://openalex.org/keywords/chemistry","display_name":"Chemistry","score":0.1832904815673828},{"id":"https://openalex.org/keywords/organic-chemistry","display_name":"Organic chemistry","score":0.12084093689918518}],"concepts":[{"id":"https://openalex.org/C79090758","wikidata":"https://www.wikidata.org/wiki/Q1045739","display_name":"Ferroelectricity","level":3,"score":0.7974674701690674},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6237788796424866},{"id":"https://openalex.org/C203036418","wikidata":"https://www.wikidata.org/wiki/Q284256","display_name":"Crystallization","level":2,"score":0.5206788778305054},{"id":"https://openalex.org/C22423302","wikidata":"https://www.wikidata.org/wiki/Q898444","display_name":"Sputtering","level":3,"score":0.41369086503982544},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.40158307552337646},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.2688107490539551},{"id":"https://openalex.org/C133386390","wikidata":"https://www.wikidata.org/wiki/Q184996","display_name":"Dielectric","level":2,"score":0.21192988753318787},{"id":"https://openalex.org/C19067145","wikidata":"https://www.wikidata.org/wiki/Q1137203","display_name":"Thin film","level":2,"score":0.20303142070770264},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.1832904815673828},{"id":"https://openalex.org/C178790620","wikidata":"https://www.wikidata.org/wiki/Q11351","display_name":"Organic chemistry","level":1,"score":0.12084093689918518}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/drc55272.2022.9855780","is_oa":false,"landing_page_url":"https://doi.org/10.1109/drc55272.2022.9855780","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2022 Device Research Conference (DRC)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[{"id":"https://openalex.org/G554873882","display_name":null,"funder_award_id":"19H0078","funder_id":"https://openalex.org/F4320334764","funder_display_name":"Japan Society for the Promotion of Science"}],"funders":[{"id":"https://openalex.org/F4320317625","display_name":"Takase Scholarship Foundation","ror":null},{"id":"https://openalex.org/F4320334764","display_name":"Japan Society for the Promotion of Science","ror":"https://ror.org/00hhkn466"}],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":1,"referenced_works":["https://openalex.org/W4234845112"],"related_works":["https://openalex.org/W1975066220","https://openalex.org/W2361648762","https://openalex.org/W2035249489","https://openalex.org/W1967383351","https://openalex.org/W850150341","https://openalex.org/W142388841","https://openalex.org/W2066362799","https://openalex.org/W2295922851","https://openalex.org/W2385571654","https://openalex.org/W1969082957"],"abstract_inverted_index":{"Ferroelectric":[0],"nondoped":[1,55],"HfO":[2,34,56,110],"<inf":[3,26,35,57,111],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[4,27,36,58,112],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">2</inf>":[5,28,37,59,113],"has":[6],"been":[7],"investigated":[8,100],"for":[9,92,106],"metal-ferroelectric-semiconductor":[10],"field-effect":[11],"transistor":[12],"(MFSFET)":[13],"application":[14],"due":[15],"to":[16,117],"the":[17,22,45,62,69,79,101],"low":[18,80],"crystallization":[19],"temperature":[20],"and":[21,38,61],"suppression":[23],"of":[24,47,72,87,103,121],"SiO":[25],"interfacial":[29,85],"layer":[30],"(IL)":[31],"formation":[32,116],"between":[33],"Si":[39],"substrate.":[40],"We":[41],"realized":[42],"MFSFET":[43,88],"with":[44],"scaling":[46],"ferroelectric":[48,63],"gate":[49,74,114],"insulator":[50,115],"utilizing":[51],"5":[52,107],"nm":[53,108],"thick":[54,109],",":[60],"property":[64,86],"was":[65],"improved":[66],"by":[67,84],"decreasing":[68],"sputtering":[70,104],"damage":[71],"Pt":[73],"electrode":[75],"deposition":[76],"[1].":[77],"However,":[78],"frequency":[81],"noise":[82],"affected":[83],"becomes":[89],"important,":[90],"especially":[91],"scaled":[93],"device":[94],"[2].":[95],"In":[96],"this":[97],"research,":[98],"we":[99],"effects":[102],"power":[105],"realize":[118],"high-speed":[119],"operation":[120],"MFSFET.":[122]},"counts_by_year":[{"year":2024,"cited_by_count":3}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}