{"id":"https://openalex.org/W4292388301","doi":"https://doi.org/10.1109/drc55272.2022.9855778","title":"Buried-Channel Ferroelectric FET as Energy Efficient and Reliable 1T-NVM","display_name":"Buried-Channel Ferroelectric FET as Energy Efficient and Reliable 1T-NVM","publication_year":2022,"publication_date":"2022-06-26","ids":{"openalex":"https://openalex.org/W4292388301","doi":"https://doi.org/10.1109/drc55272.2022.9855778"},"language":"en","primary_location":{"id":"doi:10.1109/drc55272.2022.9855778","is_oa":false,"landing_page_url":"https://doi.org/10.1109/drc55272.2022.9855778","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2022 Device Research Conference (DRC)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5056623827","display_name":"Saikat Chakraborty","orcid":"https://orcid.org/0000-0002-1662-653X"},"institutions":[{"id":"https://openalex.org/I86519309","display_name":"The University of Texas at Austin","ror":"https://ror.org/00hj54h04","country_code":"US","type":"education","lineage":["https://openalex.org/I86519309"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"Saikat Chakraborty","raw_affiliation_strings":["The University of Texas at Austin,Austin,Texas,USA,78712"],"affiliations":[{"raw_affiliation_string":"The University of Texas at Austin,Austin,Texas,USA,78712","institution_ids":["https://openalex.org/I86519309"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5003048953","display_name":"Jaydeep P. Kulkarni","orcid":"https://orcid.org/0000-0002-0258-6776"},"institutions":[{"id":"https://openalex.org/I86519309","display_name":"The University of Texas at Austin","ror":"https://ror.org/00hj54h04","country_code":"US","type":"education","lineage":["https://openalex.org/I86519309"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Jaydeep P. Kulkarni","raw_affiliation_strings":["The University of Texas at Austin,Austin,Texas,USA,78712"],"affiliations":[{"raw_affiliation_string":"The University of Texas at Austin,Austin,Texas,USA,78712","institution_ids":["https://openalex.org/I86519309"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":["https://openalex.org/A5056623827"],"corresponding_institution_ids":["https://openalex.org/I86519309"],"apc_list":null,"apc_paid":null,"fwci":0.183,"has_fulltext":false,"cited_by_count":2,"citation_normalized_percentile":{"value":0.47213468,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":95,"max":96},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"2"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":0.9955000281333923,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9936000108718872,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/ferroelectricity","display_name":"Ferroelectricity","score":0.7552354335784912},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.7458722591400146},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.6466208100318909},{"id":"https://openalex.org/keywords/capacitor","display_name":"Capacitor","score":0.6228930950164795},{"id":"https://openalex.org/keywords/non-volatile-memory","display_name":"Non-volatile memory","score":0.5843529105186462},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.5483680963516235},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.523561418056488},{"id":"https://openalex.org/keywords/ferroelectric-capacitor","display_name":"Ferroelectric capacitor","score":0.5221803188323975},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.5106342434883118},{"id":"https://openalex.org/keywords/field-effect-transistor","display_name":"Field-effect transistor","score":0.45521870255470276},{"id":"https://openalex.org/keywords/dielectric","display_name":"Dielectric","score":0.3966696560382843},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.36897820234298706},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.36724990606307983},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.21537232398986816}],"concepts":[{"id":"https://openalex.org/C79090758","wikidata":"https://www.wikidata.org/wiki/Q1045739","display_name":"Ferroelectricity","level":3,"score":0.7552354335784912},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7458722591400146},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.6466208100318909},{"id":"https://openalex.org/C52192207","wikidata":"https://www.wikidata.org/wiki/Q5322","display_name":"Capacitor","level":3,"score":0.6228930950164795},{"id":"https://openalex.org/C177950962","wikidata":"https://www.wikidata.org/wiki/Q10997658","display_name":"Non-volatile memory","level":2,"score":0.5843529105186462},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.5483680963516235},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.523561418056488},{"id":"https://openalex.org/C189366214","wikidata":"https://www.wikidata.org/wiki/Q4103842","display_name":"Ferroelectric capacitor","level":4,"score":0.5221803188323975},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.5106342434883118},{"id":"https://openalex.org/C145598152","wikidata":"https://www.wikidata.org/wiki/Q176097","display_name":"Field-effect transistor","level":4,"score":0.45521870255470276},{"id":"https://openalex.org/C133386390","wikidata":"https://www.wikidata.org/wiki/Q184996","display_name":"Dielectric","level":2,"score":0.3966696560382843},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.36897820234298706},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.36724990606307983},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.21537232398986816}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/drc55272.2022.9855778","is_oa":false,"landing_page_url":"https://doi.org/10.1109/drc55272.2022.9855778","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2022 Device Research Conference (DRC)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.8999999761581421,"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":6,"referenced_works":["https://openalex.org/W2074713452","https://openalex.org/W2913902313","https://openalex.org/W3013902276","https://openalex.org/W3035395843","https://openalex.org/W3090974145","https://openalex.org/W3137483356"],"related_works":["https://openalex.org/W2953255424","https://openalex.org/W2097792885","https://openalex.org/W1992124208","https://openalex.org/W4376612721","https://openalex.org/W1515609060","https://openalex.org/W2539463647","https://openalex.org/W2085087880","https://openalex.org/W2166508075","https://openalex.org/W1963822728","https://openalex.org/W2034643761"],"abstract_inverted_index":{"The":[0],"unprecedented":[1],"growth":[2],"in":[3,43,78,122,134,162],"the":[4,24,58,71,79,105,128,132,146,159,172,190],"adoption":[5],"of":[6,13,167],"Deep":[7],"Neural":[8],"Networks":[9],"(DNN)":[10],"for":[11],"variety":[12],"ML/AI":[14],"applications":[15],"has":[16],"resulted":[17],"into":[18],"a":[19,118,151,163],"data":[20],"deluge":[21],"[1].":[22],"Among":[23],"prevalent":[25],"and":[26,67,100,184],"emerging":[27],"memories,":[28],"Ferroelectric":[29],"Field":[30],"Effect":[31],"Transistor":[32],"(FeFET)":[33],"based":[34],"memory":[35],"[2]\u2013[4],":[36],"which":[37,188],"leverages":[38],"recently":[39],"discovered":[40],"ferroelectric":[41,129],"properties":[42],"Hafnium/Zirconium":[44],"oxides":[45],"(HZO),":[46],"is":[47],"very":[48],"promising":[49,72],"as":[50,83],"along":[51],"with":[52],"CMOS":[53],"compatibility":[54],"it":[55],"can":[56],"offer":[57],"non-volatility,":[59],"dense":[60],"1-Transitor":[61],"bitcells,":[62],"high":[63,84,97],"speed":[64],"read":[65],"operation,":[66],"multi-level-cell":[68],"functionality.":[69],"Despite":[70],"attributes,":[73],"critical":[74],"fundamental":[75],"roadblocks":[76],"exist":[77],"FeFET":[80,124],"advancement":[81],"such":[82],"program/erase":[85],"voltage":[86,161,169],"(\u00b14V),":[87],"poor":[88],"reliability":[89],"due":[90],"to":[91,145],"thin":[92],"inter-layer":[93],"dielectric":[94],"(ILD)":[95],"experiencing":[96],"electric":[98],"field":[99,103],"large":[101],"depolarizing":[102,191],"degrading":[104],"retention":[106],"time":[107],"[1],":[108],"[2].":[109],"Several":[110],"works":[111],"have":[112],"addressed":[113],"these":[114],"issues":[115],"by":[116,139],"introducing":[117],"circular":[119],"channel":[120],"geometry":[121],"recessed-channel":[123],"(C-FeFET)":[125],"[5],":[126],"decoupling":[127],"layer":[130],"from":[131],"MOSFET":[133,147,185],"Ferroelectric-Metal-FET":[135],"(FeMFET)":[136],"[6]":[137],"or":[138,175],"connecting":[140],"multiple":[141],"Metal-Ferroelectric-Metal":[142],"(MFeM)":[143],"capacitors":[144],"gate":[148,186],"terminal":[149],"forming":[150],"multiple-FeMFET":[152,176],"[7]":[153],"(Fig.":[154],"1).":[155],"However,":[156],"C-FeFET":[157],"reduces":[158],"write":[160],"limited":[164],"manner":[165],"because":[166],"significant":[168],"drop":[170],"across":[171],"ILD.":[173],"FeMFET":[174],"introduces":[177],"floating":[178],"intermediate":[179],"node":[180],"between":[181],"MFeM":[182],"capacitor":[183],"stacks":[187],"increases":[189],"field.":[192]},"counts_by_year":[{"year":2025,"cited_by_count":2}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}