{"id":"https://openalex.org/W4292388152","doi":"https://doi.org/10.1109/drc55272.2022.9855648","title":"High-performance TiO<sub>2</sub> thin film transistors using TiO<sub>2</sub> as both channel and dielectric","display_name":"High-performance TiO<sub>2</sub> thin film transistors using TiO<sub>2</sub> as both channel and dielectric","publication_year":2022,"publication_date":"2022-06-26","ids":{"openalex":"https://openalex.org/W4292388152","doi":"https://doi.org/10.1109/drc55272.2022.9855648"},"language":"en","primary_location":{"id":"doi:10.1109/drc55272.2022.9855648","is_oa":false,"landing_page_url":"https://doi.org/10.1109/drc55272.2022.9855648","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2022 Device Research Conference (DRC)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5100436872","display_name":"Jie Zhang","orcid":"https://orcid.org/0000-0003-2730-7208"},"institutions":[{"id":"https://openalex.org/I86501945","display_name":"University of Delaware","ror":"https://ror.org/01sbq1a82","country_code":"US","type":"education","lineage":["https://openalex.org/I86501945"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"Jie Zhang","raw_affiliation_strings":["University of Delaware,Newark,Delaware,USA,19716"],"affiliations":[{"raw_affiliation_string":"University of Delaware,Newark,Delaware,USA,19716","institution_ids":["https://openalex.org/I86501945"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5065458081","display_name":"Yuping Zeng","orcid":"https://orcid.org/0000-0002-6128-8103"},"institutions":[{"id":"https://openalex.org/I86501945","display_name":"University of Delaware","ror":"https://ror.org/01sbq1a82","country_code":"US","type":"education","lineage":["https://openalex.org/I86501945"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Yuping Zeng","raw_affiliation_strings":["University of Delaware,Newark,Delaware,USA,19716"],"affiliations":[{"raw_affiliation_string":"University of Delaware,Newark,Delaware,USA,19716","institution_ids":["https://openalex.org/I86501945"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":["https://openalex.org/A5100436872"],"corresponding_institution_ids":["https://openalex.org/I86501945"],"apc_list":null,"apc_paid":null,"fwci":0.0915,"has_fulltext":false,"cited_by_count":1,"citation_normalized_percentile":{"value":0.39776754,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":91,"max":95},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"2"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10623","display_name":"Thin-Film Transistor Technologies","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10623","display_name":"Thin-Film Transistor Technologies","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10090","display_name":"ZnO doping and properties","score":0.9986000061035156,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11128","display_name":"Transition Metal Oxide Nanomaterials","score":0.9972000122070312,"subfield":{"id":"https://openalex.org/subfields/2507","display_name":"Polymers and Plastics"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.4730704724788666},{"id":"https://openalex.org/keywords/crystallinity","display_name":"Crystallinity","score":0.4144301116466522},{"id":"https://openalex.org/keywords/dielectric","display_name":"Dielectric","score":0.4106360375881195},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.24006003141403198}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.4730704724788666},{"id":"https://openalex.org/C46275449","wikidata":"https://www.wikidata.org/wiki/Q2458815","display_name":"Crystallinity","level":2,"score":0.4144301116466522},{"id":"https://openalex.org/C133386390","wikidata":"https://www.wikidata.org/wiki/Q184996","display_name":"Dielectric","level":2,"score":0.4106360375881195},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.24006003141403198},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/drc55272.2022.9855648","is_oa":false,"landing_page_url":"https://doi.org/10.1109/drc55272.2022.9855648","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2022 Device Research Conference (DRC)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[{"id":"https://openalex.org/G2410999473","display_name":null,"funder_award_id":"80NSSC20M0142","funder_id":"https://openalex.org/F4320306101","funder_display_name":"National Aeronautics and Space Administration"},{"id":"https://openalex.org/G8426352213","display_name":null,"funder_award_id":"FA9550-21-1-0076","funder_id":"https://openalex.org/F4320338279","funder_display_name":"Air Force Office of Scientific Research"}],"funders":[{"id":"https://openalex.org/F4320306101","display_name":"National Aeronautics and Space Administration","ror":"https://ror.org/027ka1x80"},{"id":"https://openalex.org/F4320338279","display_name":"Air Force Office of Scientific Research","ror":"https://ror.org/011e9bt93"}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":3,"referenced_works":["https://openalex.org/W2962271922","https://openalex.org/W2964907209","https://openalex.org/W3211803052"],"related_works":["https://openalex.org/W2259847155","https://openalex.org/W4311318556","https://openalex.org/W2172275402","https://openalex.org/W2477435204","https://openalex.org/W2359607386","https://openalex.org/W2052247542","https://openalex.org/W1968649165","https://openalex.org/W2028707226","https://openalex.org/W2083222146","https://openalex.org/W4239046702"],"abstract_inverted_index":{"Titanium":[0],"dioxide":[1],"(TiO":[2],"<inf":[3,37,48,68,81,85,118,125,136],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[4,38,49,69,82,86,99,119,126,131,137,152,157,174],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">2</inf>":[5,39,50,70,83,87,120,127,138],")":[6,88],"have":[7],"emerged":[8],"as":[9,20,89,101],"a":[10,115,141,146,160,170],"versatile":[11],"multifunctional":[12],"material,":[13],"which":[14],"enables":[15],"numerous":[16],"device":[17,31,143],"applications":[18],"such":[19],"optical":[21],"sensor,":[22],"solar":[23],"cell,":[24],"thin":[25],"film":[26],"transistors":[27],"(TFTs),":[28],"and":[29,93,129,159],"memristive":[30],"[1].":[32],"To":[33],"successfully":[34],"apply":[35],"TiO":[36,47,67,80,117,124,135],"in":[40],"these":[41],"devices,":[42],"the":[43,60,64,73,90,102,112],"electrical":[44],"properties":[45],"of":[46,63,154,165],"films":[51,71],"need":[52],"to":[53],"be":[54],"well":[55],"studied.":[56],"Previously,":[57],"we":[58,109],"demonstrated":[59,106],"conductivity":[61],"transition":[62],"nearly":[65],"stoichiometric":[66],"via":[72],"crystallinity":[74],"engineering.":[75],"High-performance":[76],"TFTs":[77,139],"with":[78,96],"polycrystalline":[79],"(poLY-TiO":[84],"active":[91],"channel":[92,128],"InAIN/GaN":[94],"MISHEMTs":[95],"amorphou":[97],"<tex":[98,130,151,173],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">$\\text{TiO}_{2}(\\mathrm{a}-\\text{TiO}_{2})$</tex>":[100],"gate":[103],"dielectrics":[104],"were":[105],"[2].":[107],"Herein,":[108],"report":[110],"for":[111,182],"first":[113],"time":[114],"proof-of-concept":[116],"TFT":[121],"using":[122],"poly-":[123],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">$\\mathrm{a}-\\text{TiO}_{2}$</tex>":[132],"dielectric.":[133],"These":[134],"show":[140],"high":[142,147],"performance":[144],"including":[145],"on/off":[148],"current":[149],"ratio":[150],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">$(\\mathrm{I}_{\\text{on}}/\\mathrm{I}_{\\text{off}})$</tex>":[153],"4\u00d710":[155],"<sup":[156],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">8</sup>":[158],"low":[161],"subthreshold":[162],"swing":[163],"(SS)":[164],"120":[166],"m":[167],"V/dec":[168],"under":[169],"battery-compatible":[171],"voltage":[172],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">$(&lt;":[175],"2\\mathrm{V})$</tex>":[176],",":[177],"suggesting":[178],"their":[179],"strong":[180],"potential":[181],"portable":[183],"electronics.":[184]},"counts_by_year":[{"year":2025,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}