{"id":"https://openalex.org/W3182916930","doi":"https://doi.org/10.1109/drc52342.2021.9467203","title":"On MX<sub>2</sub>-based metal-oxide-semiconductor device capacitance-voltage characteristics and dual-gate operation","display_name":"On MX<sub>2</sub>-based metal-oxide-semiconductor device capacitance-voltage characteristics and dual-gate operation","publication_year":2021,"publication_date":"2021-06-20","ids":{"openalex":"https://openalex.org/W3182916930","doi":"https://doi.org/10.1109/drc52342.2021.9467203","mag":"3182916930"},"language":"en","primary_location":{"id":"doi:10.1109/drc52342.2021.9467203","is_oa":false,"landing_page_url":"https://doi.org/10.1109/drc52342.2021.9467203","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2021 Device Research Conference (DRC)","raw_type":"proceedings-article"},"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5107873137","display_name":"Dennis Lin","orcid":"https://orcid.org/0000-0002-1577-6050"},"institutions":[{"id":"https://openalex.org/I4210114974","display_name":"IMEC","ror":"https://ror.org/02kcbn207","country_code":"BE","type":"nonprofit","lineage":["https://openalex.org/I4210114974"]}],"countries":["BE"],"is_corresponding":false,"raw_author_name":"D. Lin","raw_affiliation_strings":["IMEC,Leuven,Belgium","IMEC, Leuven, Belgium"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IMEC,Leuven,Belgium","institution_ids":["https://openalex.org/I4210114974"]},{"raw_affiliation_string":"IMEC, Leuven, Belgium","institution_ids":["https://openalex.org/I4210114974"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101740239","display_name":"Xiangyu Wu","orcid":"https://orcid.org/0000-0002-6607-1819"},"institutions":[{"id":"https://openalex.org/I4210114974","display_name":"IMEC","ror":"https://ror.org/02kcbn207","country_code":"BE","type":"nonprofit","lineage":["https://openalex.org/I4210114974"]}],"countries":["BE"],"is_corresponding":false,"raw_author_name":"X. Wu","raw_affiliation_strings":["IMEC,Leuven,Belgium","IMEC, Leuven, Belgium"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IMEC,Leuven,Belgium","institution_ids":["https://openalex.org/I4210114974"]},{"raw_affiliation_string":"IMEC, Leuven, Belgium","institution_ids":["https://openalex.org/I4210114974"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5084542449","display_name":"Vivek Mootheri","orcid":"https://orcid.org/0000-0002-1373-8405"},"institutions":[{"id":"https://openalex.org/I4210114974","display_name":"IMEC","ror":"https://ror.org/02kcbn207","country_code":"BE","type":"nonprofit","lineage":["https://openalex.org/I4210114974"]},{"id":"https://openalex.org/I99464096","display_name":"KU Leuven","ror":"https://ror.org/05f950310","country_code":"BE","type":"education","lineage":["https://openalex.org/I99464096"]}],"countries":["BE"],"is_corresponding":false,"raw_author_name":"V. Mootheri","raw_affiliation_strings":["IMEC,Leuven,Belgium","IMEC, Leuven, Belgium","KU Leuven, Belgium"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IMEC,Leuven,Belgium","institution_ids":["https://openalex.org/I4210114974"]},{"raw_affiliation_string":"IMEC, Leuven, Belgium","institution_ids":["https://openalex.org/I4210114974"]},{"raw_affiliation_string":"KU Leuven, Belgium","institution_ids":["https://openalex.org/I99464096"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5042834217","display_name":"Daire Cott","orcid":null},"institutions":[{"id":"https://openalex.org/I4210114974","display_name":"IMEC","ror":"https://ror.org/02kcbn207","country_code":"BE","type":"nonprofit","lineage":["https://openalex.org/I4210114974"]}],"countries":["BE"],"is_corresponding":false,"raw_author_name":"D. Cott","raw_affiliation_strings":["IMEC,Leuven,Belgium","IMEC, Leuven, Belgium"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IMEC,Leuven,Belgium","institution_ids":["https://openalex.org/I4210114974"]},{"raw_affiliation_string":"IMEC, Leuven, Belgium","institution_ids":["https://openalex.org/I4210114974"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5042615078","display_name":"Benjamin Groven","orcid":"https://orcid.org/0000-0002-5781-7594"},"institutions":[{"id":"https://openalex.org/I4210114974","display_name":"IMEC","ror":"https://ror.org/02kcbn207","country_code":"BE","type":"nonprofit","lineage":["https://openalex.org/I4210114974"]}],"countries":["BE"],"is_corresponding":false,"raw_author_name":"B. Groven","raw_affiliation_strings":["IMEC,Leuven,Belgium","IMEC, Leuven, Belgium"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IMEC,Leuven,Belgium","institution_ids":["https://openalex.org/I4210114974"]},{"raw_affiliation_string":"IMEC, Leuven, Belgium","institution_ids":["https://openalex.org/I4210114974"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5109150210","display_name":"P. Morin","orcid":null},"institutions":[{"id":"https://openalex.org/I4210114974","display_name":"IMEC","ror":"https://ror.org/02kcbn207","country_code":"BE","type":"nonprofit","lineage":["https://openalex.org/I4210114974"]}],"countries":["BE"],"is_corresponding":false,"raw_author_name":"P. Morin","raw_affiliation_strings":["IMEC,Leuven,Belgium","IMEC, Leuven, Belgium"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IMEC,Leuven,Belgium","institution_ids":["https://openalex.org/I4210114974"]},{"raw_affiliation_string":"IMEC, Leuven, Belgium","institution_ids":["https://openalex.org/I4210114974"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5029810556","display_name":"Inge Asselberghs","orcid":"https://orcid.org/0000-0001-8371-3222"},"institutions":[{"id":"https://openalex.org/I4210114974","display_name":"IMEC","ror":"https://ror.org/02kcbn207","country_code":"BE","type":"nonprofit","lineage":["https://openalex.org/I4210114974"]}],"countries":["BE"],"is_corresponding":false,"raw_author_name":"I. Asselberghs","raw_affiliation_strings":["IMEC,Leuven,Belgium","IMEC, Leuven, Belgium"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IMEC,Leuven,Belgium","institution_ids":["https://openalex.org/I4210114974"]},{"raw_affiliation_string":"IMEC, Leuven, Belgium","institution_ids":["https://openalex.org/I4210114974"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5043612766","display_name":"Iuliana Radu","orcid":"https://orcid.org/0000-0002-7230-7218"},"institutions":[{"id":"https://openalex.org/I4210114974","display_name":"IMEC","ror":"https://ror.org/02kcbn207","country_code":"BE","type":"nonprofit","lineage":["https://openalex.org/I4210114974"]}],"countries":["BE"],"is_corresponding":false,"raw_author_name":"I. Radu","raw_affiliation_strings":["IMEC,Leuven,Belgium","IMEC, Leuven, Belgium"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IMEC,Leuven,Belgium","institution_ids":["https://openalex.org/I4210114974"]},{"raw_affiliation_string":"IMEC, Leuven, Belgium","institution_ids":["https://openalex.org/I4210114974"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":null,"has_fulltext":false,"cited_by_count":1,"citation_normalized_percentile":null,"cited_by_percentile_year":null,"biblio":{"volume":"3","issue":null,"first_page":"1","last_page":"2"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11169","display_name":"Silicon Nanostructures and Photoluminescence","score":0.9976000189781189,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/capacitor","display_name":"Capacitor","score":0.8144078254699707},{"id":"https://openalex.org/keywords/capacitance","display_name":"Capacitance","score":0.7256278991699219},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.6777392029762268},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.6647760272026062},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.6163167357444763},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.6107205748558044},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.6093788743019104},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.5874955058097839},{"id":"https://openalex.org/keywords/logic-gate","display_name":"Logic gate","score":0.49244651198387146},{"id":"https://openalex.org/keywords/semiconductor","display_name":"Semiconductor","score":0.4899255633354187},{"id":"https://openalex.org/keywords/node","display_name":"Node (physics)","score":0.48069268465042114},{"id":"https://openalex.org/keywords/threshold-voltage","display_name":"Threshold voltage","score":0.4627283811569214},{"id":"https://openalex.org/keywords/metal-gate","display_name":"Metal gate","score":0.46021875739097595},{"id":"https://openalex.org/keywords/field-effect-transistor","display_name":"Field-effect transistor","score":0.41802161931991577},{"id":"https://openalex.org/keywords/electrostatics","display_name":"Electrostatics","score":0.4172772765159607},{"id":"https://openalex.org/keywords/gate-oxide","display_name":"Gate oxide","score":0.36659640073776245},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.17503392696380615},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.16641804575920105},{"id":"https://openalex.org/keywords/electrode","display_name":"Electrode","score":0.10736989974975586}],"concepts":[{"id":"https://openalex.org/C52192207","wikidata":"https://www.wikidata.org/wiki/Q5322","display_name":"Capacitor","level":3,"score":0.8144078254699707},{"id":"https://openalex.org/C30066665","wikidata":"https://www.wikidata.org/wiki/Q164399","display_name":"Capacitance","level":3,"score":0.7256278991699219},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6777392029762268},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.6647760272026062},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.6163167357444763},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.6107205748558044},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.6093788743019104},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.5874955058097839},{"id":"https://openalex.org/C131017901","wikidata":"https://www.wikidata.org/wiki/Q170451","display_name":"Logic gate","level":2,"score":0.49244651198387146},{"id":"https://openalex.org/C108225325","wikidata":"https://www.wikidata.org/wiki/Q11456","display_name":"Semiconductor","level":2,"score":0.4899255633354187},{"id":"https://openalex.org/C62611344","wikidata":"https://www.wikidata.org/wiki/Q1062658","display_name":"Node (physics)","level":2,"score":0.48069268465042114},{"id":"https://openalex.org/C195370968","wikidata":"https://www.wikidata.org/wiki/Q1754002","display_name":"Threshold voltage","level":4,"score":0.4627283811569214},{"id":"https://openalex.org/C51140833","wikidata":"https://www.wikidata.org/wiki/Q6822740","display_name":"Metal gate","level":5,"score":0.46021875739097595},{"id":"https://openalex.org/C145598152","wikidata":"https://www.wikidata.org/wiki/Q176097","display_name":"Field-effect transistor","level":4,"score":0.41802161931991577},{"id":"https://openalex.org/C117626034","wikidata":"https://www.wikidata.org/wiki/Q26336","display_name":"Electrostatics","level":2,"score":0.4172772765159607},{"id":"https://openalex.org/C2361726","wikidata":"https://www.wikidata.org/wiki/Q5527031","display_name":"Gate oxide","level":4,"score":0.36659640073776245},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.17503392696380615},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.16641804575920105},{"id":"https://openalex.org/C17525397","wikidata":"https://www.wikidata.org/wiki/Q176140","display_name":"Electrode","level":2,"score":0.10736989974975586},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/drc52342.2021.9467203","is_oa":false,"landing_page_url":"https://doi.org/10.1109/drc52342.2021.9467203","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2021 Device Research Conference (DRC)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7","score":0.8100000023841858}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":1,"referenced_works":["https://openalex.org/W3010011777"],"related_works":["https://openalex.org/W2084196976","https://openalex.org/W2049186354","https://openalex.org/W2137891515","https://openalex.org/W1634484921","https://openalex.org/W2121595565","https://openalex.org/W2534774175","https://openalex.org/W2073644107","https://openalex.org/W2796938634","https://openalex.org/W2537324489","https://openalex.org/W2064610574"],"abstract_inverted_index":{"Field-effect":[0],"device":[1],"concepts":[2],"with":[3],"2-D":[4],"semiconductors":[5],"as":[6,11,71,73],"channels":[7],"have":[8],"been":[9],"proposed":[10],"an":[12],"alternative":[13],"to":[14,36],"Si":[15,30],"based":[16],"CMOS":[17],"beyond":[18],"the":[19,44,68,74,79],"3nm":[20],"node.":[21],"A":[22],"MX":[23,82],"2":[24,83],"MOS":[25,84],"capacitor":[26],"differs":[27],"from":[28],"its":[29,37],"counterpart":[31],"primarily":[32],"in":[33],"electrostatics":[34],"due":[35],"ultra-thin,":[38],"fully":[39],"depleted":[40],"body.":[41],"In":[42],"addition,":[43],"possibility":[45],"of":[46,78],"having":[47],"both":[48],"a":[49,52,60],"top":[50],"and":[51,86],"back":[53],"gate":[54],"enables":[55],"multi-threshold":[56],"single-gate":[57],"operations":[58],"or":[59],"connected":[61],"dual-gate":[62],"(DG)":[63],"operation.":[64],"Here":[65],"we":[66],"examine":[67],"capacitance-voltage":[69],"(C-V)":[70],"well":[72],"current-voltage":[75],"(I-V)":[76],"characteristics":[77],"synthetic":[80],"ultra-thin":[81],"capacitors":[85],"transistors.":[87]},"counts_by_year":[{"year":2023,"cited_by_count":1}],"updated_date":"2026-07-14T23:27:15.235271","created_date":"2025-10-10T00:00:00"}