{"id":"https://openalex.org/W3180418469","doi":"https://doi.org/10.1109/drc52342.2021.9467164","title":"GaN-channel HEMTs with AlN buffer for high-voltage switching","display_name":"GaN-channel HEMTs with AlN buffer for high-voltage switching","publication_year":2021,"publication_date":"2021-06-20","ids":{"openalex":"https://openalex.org/W3180418469","doi":"https://doi.org/10.1109/drc52342.2021.9467164","mag":"3180418469"},"language":"en","primary_location":{"id":"doi:10.1109/drc52342.2021.9467164","is_oa":false,"landing_page_url":"https://doi.org/10.1109/drc52342.2021.9467164","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2021 Device Research Conference (DRC)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5071306856","display_name":"Oliver Hilt","orcid":"https://orcid.org/0000-0001-8091-5558"},"institutions":[{"id":"https://openalex.org/I2799749373","display_name":"Ferdinand-Braun-Institut","ror":"https://ror.org/02be22443","country_code":"DE","type":"facility","lineage":["https://openalex.org/I2799749373","https://openalex.org/I315704651"]}],"countries":["DE"],"is_corresponding":true,"raw_author_name":"Oliver Hilt","raw_affiliation_strings":["Ferdinand-Braun Institut gGmbH,Berlin,Germany,12489"],"affiliations":[{"raw_affiliation_string":"Ferdinand-Braun Institut gGmbH,Berlin,Germany,12489","institution_ids":["https://openalex.org/I2799749373"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5063461797","display_name":"Frank Brunner","orcid":"https://orcid.org/0000-0002-9196-6358"},"institutions":[{"id":"https://openalex.org/I2799749373","display_name":"Ferdinand-Braun-Institut","ror":"https://ror.org/02be22443","country_code":"DE","type":"facility","lineage":["https://openalex.org/I2799749373","https://openalex.org/I315704651"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Frank Brunner","raw_affiliation_strings":["Ferdinand-Braun Institut gGmbH,Berlin,Germany,12489"],"affiliations":[{"raw_affiliation_string":"Ferdinand-Braun Institut gGmbH,Berlin,Germany,12489","institution_ids":["https://openalex.org/I2799749373"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5068877518","display_name":"Eldad Bahat\u2010Treidel","orcid":"https://orcid.org/0000-0001-6794-6907"},"institutions":[{"id":"https://openalex.org/I2799749373","display_name":"Ferdinand-Braun-Institut","ror":"https://ror.org/02be22443","country_code":"DE","type":"facility","lineage":["https://openalex.org/I2799749373","https://openalex.org/I315704651"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Eldad Bahat Treidel","raw_affiliation_strings":["Ferdinand-Braun Institut gGmbH,Berlin,Germany,12489"],"affiliations":[{"raw_affiliation_string":"Ferdinand-Braun Institut gGmbH,Berlin,Germany,12489","institution_ids":["https://openalex.org/I2799749373"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5040334817","display_name":"Mihaela Wolf","orcid":"https://orcid.org/0000-0002-3417-2463"},"institutions":[{"id":"https://openalex.org/I2799749373","display_name":"Ferdinand-Braun-Institut","ror":"https://ror.org/02be22443","country_code":"DE","type":"facility","lineage":["https://openalex.org/I2799749373","https://openalex.org/I315704651"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Mihaela Wolf","raw_affiliation_strings":["Ferdinand-Braun Institut gGmbH,Berlin,Germany,12489"],"affiliations":[{"raw_affiliation_string":"Ferdinand-Braun Institut gGmbH,Berlin,Germany,12489","institution_ids":["https://openalex.org/I2799749373"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5086097177","display_name":"Joachim W\u00fcrfl","orcid":null},"institutions":[{"id":"https://openalex.org/I2799749373","display_name":"Ferdinand-Braun-Institut","ror":"https://ror.org/02be22443","country_code":"DE","type":"facility","lineage":["https://openalex.org/I2799749373","https://openalex.org/I315704651"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Joachim Wurfl","raw_affiliation_strings":["Ferdinand-Braun Institut gGmbH,Berlin,Germany,12489"],"affiliations":[{"raw_affiliation_string":"Ferdinand-Braun Institut gGmbH,Berlin,Germany,12489","institution_ids":["https://openalex.org/I2799749373"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":5,"corresponding_author_ids":["https://openalex.org/A5071306856"],"corresponding_institution_ids":["https://openalex.org/I2799749373"],"apc_list":null,"apc_paid":null,"fwci":0.4645,"has_fulltext":false,"cited_by_count":4,"citation_normalized_percentile":{"value":0.62595232,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":96},"biblio":{"volume":null,"issue":null,"first_page":null,"last_page":null},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12529","display_name":"Ga2O3 and related materials","score":0.9991999864578247,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.7847106456756592},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.7258162498474121},{"id":"https://openalex.org/keywords/doping","display_name":"Doping","score":0.6635637879371643},{"id":"https://openalex.org/keywords/buffer","display_name":"Buffer (optical fiber)","score":0.6583424210548401},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.6307126879692078},{"id":"https://openalex.org/keywords/breakdown-voltage","display_name":"Breakdown voltage","score":0.5517343282699585},{"id":"https://openalex.org/keywords/wide-bandgap-semiconductor","display_name":"Wide-bandgap semiconductor","score":0.5193561315536499},{"id":"https://openalex.org/keywords/gallium-nitride","display_name":"Gallium nitride","score":0.4624161720275879},{"id":"https://openalex.org/keywords/power-semiconductor-device","display_name":"Power semiconductor device","score":0.43721330165863037},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.37242406606674194},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.22892829775810242},{"id":"https://openalex.org/keywords/layer","display_name":"Layer (electronics)","score":0.20080336928367615},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.10471740365028381}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7847106456756592},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.7258162498474121},{"id":"https://openalex.org/C57863236","wikidata":"https://www.wikidata.org/wiki/Q1130571","display_name":"Doping","level":2,"score":0.6635637879371643},{"id":"https://openalex.org/C145018004","wikidata":"https://www.wikidata.org/wiki/Q4985944","display_name":"Buffer (optical fiber)","level":2,"score":0.6583424210548401},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.6307126879692078},{"id":"https://openalex.org/C119321828","wikidata":"https://www.wikidata.org/wiki/Q1267190","display_name":"Breakdown voltage","level":3,"score":0.5517343282699585},{"id":"https://openalex.org/C189278905","wikidata":"https://www.wikidata.org/wiki/Q2157708","display_name":"Wide-bandgap semiconductor","level":2,"score":0.5193561315536499},{"id":"https://openalex.org/C2778871202","wikidata":"https://www.wikidata.org/wiki/Q411713","display_name":"Gallium nitride","level":3,"score":0.4624161720275879},{"id":"https://openalex.org/C129014197","wikidata":"https://www.wikidata.org/wiki/Q906544","display_name":"Power semiconductor device","level":3,"score":0.43721330165863037},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.37242406606674194},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.22892829775810242},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.20080336928367615},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.10471740365028381},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/drc52342.2021.9467164","is_oa":false,"landing_page_url":"https://doi.org/10.1109/drc52342.2021.9467164","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2021 Device Research Conference (DRC)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.4099999964237213,"id":"https://metadata.un.org/sdg/6","display_name":"Clean water and sanitation"}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":3,"referenced_works":["https://openalex.org/W1801635354","https://openalex.org/W2945849427","https://openalex.org/W2952492789"],"related_works":["https://openalex.org/W2145148482","https://openalex.org/W4226474410","https://openalex.org/W2547313771","https://openalex.org/W2058570774","https://openalex.org/W3142831906","https://openalex.org/W2017059089","https://openalex.org/W2112199594","https://openalex.org/W2770290499","https://openalex.org/W2135760363","https://openalex.org/W4205737017"],"abstract_inverted_index":{"Lateral":[0],"GaN-based":[1],"transistors":[2],"(HEMTs)":[3],"for":[4],"power-electronic":[5],"switching":[6],"up":[7],"to":[8],"650":[9],"V":[10,26],"have":[11],"not":[12],"yet":[13],"approached":[14],"their":[15],"theoretical":[16],"material":[17,67],"limit":[18],"in":[19,110],"terms":[20],"of":[21],"R":[22],"ON":[23],"A":[24],"vs.":[25],"Br":[27],"-":[28],"unlike":[29],"Si":[30],"and":[31,41,68],"SiC":[32],"based":[33],"devices.":[34],"The":[35],"inherent":[36],"compromise":[37],"between":[38],"breakdown":[39,98],"strength":[40],"dispersion":[42,54],"by":[43],"the":[44,69,74,86,105],"usually":[45],"required":[46],"GaN-buffer":[47],"compensation":[48],"doping":[49,64],"is":[50],"one":[51],"reason.":[52],"Related":[53],"effects":[55],"should":[56,83],"be":[57],"absent":[58],"when":[59],"using":[60],"AlN":[61],"without":[62],"any":[63],"as":[65],"buffer":[66,116],"high":[70],"conduction-band":[71],"offset":[72],"at":[73],"AlN-buffer":[75],"/":[76],"GaN-channel":[77],"interface":[78],"(":[79],"Fig.":[80],"1":[81],")":[82],"effectively":[84],"confine":[85],"GaN":[87,111,115],"transistor":[88],"channel":[89],"[1]":[90],".":[91,118],"This":[92],"would":[93],"result":[94],"into":[95],"a":[96],"steeper":[97],"voltage":[99],"scaling":[100],"with":[101,113],"gate-drain":[102],"distance,":[103],"than":[104],"typically":[106],"observed":[107],"100-120":[108],"V/\u03bcm":[109],"HEMTs":[112],"carbon-doped":[114],"[2]":[117]},"counts_by_year":[{"year":2025,"cited_by_count":1},{"year":2024,"cited_by_count":2},{"year":2023,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}