{"id":"https://openalex.org/W3041150688","doi":"https://doi.org/10.1109/drc50226.2020.9135160","title":"Crystalline Calcium Fluoride: A Record-Thin Insulator for Nanoscale 2D Electronics","display_name":"Crystalline Calcium Fluoride: A Record-Thin Insulator for Nanoscale 2D Electronics","publication_year":2020,"publication_date":"2020-06-01","ids":{"openalex":"https://openalex.org/W3041150688","doi":"https://doi.org/10.1109/drc50226.2020.9135160","mag":"3041150688"},"language":"en","primary_location":{"id":"doi:10.1109/drc50226.2020.9135160","is_oa":false,"landing_page_url":"https://doi.org/10.1109/drc50226.2020.9135160","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2020 Device Research Conference (DRC)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5003579890","display_name":"Yu. Yu. Illarionov","orcid":"https://orcid.org/0000-0003-4323-1389"},"institutions":[{"id":"https://openalex.org/I145847075","display_name":"TU Wien","ror":"https://ror.org/04d836q62","country_code":"AT","type":"education","lineage":["https://openalex.org/I145847075"]}],"countries":["AT"],"is_corresponding":true,"raw_author_name":"Yu. Yu. Illarionov","raw_affiliation_strings":["TU Wien, Vienna, Austria"],"affiliations":[{"raw_affiliation_string":"TU Wien, Vienna, Austria","institution_ids":["https://openalex.org/I145847075"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5108719770","display_name":"A. G. Banshchikov","orcid":null},"institutions":[{"id":"https://openalex.org/I95568926","display_name":"Ioffe Institute","ror":"https://ror.org/05dkdaa55","country_code":"RU","type":"facility","lineage":["https://openalex.org/I1313323035","https://openalex.org/I4210096333","https://openalex.org/I95568926"]}],"countries":["RU"],"is_corresponding":false,"raw_author_name":"A. G. Banshchikov","raw_affiliation_strings":["Ioffe Institute, St-Petersburg, Russia"],"affiliations":[{"raw_affiliation_string":"Ioffe Institute, St-Petersburg, Russia","institution_ids":["https://openalex.org/I95568926"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5047987940","display_name":"Theresia Knobloch","orcid":"https://orcid.org/0000-0001-5156-9510"},"institutions":[{"id":"https://openalex.org/I145847075","display_name":"TU Wien","ror":"https://ror.org/04d836q62","country_code":"AT","type":"education","lineage":["https://openalex.org/I145847075"]}],"countries":["AT"],"is_corresponding":false,"raw_author_name":"T. Knobloch","raw_affiliation_strings":["TU Wien, Vienna, Austria"],"affiliations":[{"raw_affiliation_string":"TU Wien, Vienna, Austria","institution_ids":["https://openalex.org/I145847075"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5029004425","display_name":"Dmitry K. Polyushkin","orcid":"https://orcid.org/0000-0002-6658-9781"},"institutions":[{"id":"https://openalex.org/I145847075","display_name":"TU Wien","ror":"https://ror.org/04d836q62","country_code":"AT","type":"education","lineage":["https://openalex.org/I145847075"]}],"countries":["AT"],"is_corresponding":false,"raw_author_name":"D. K. Polyushkin","raw_affiliation_strings":["TU Wien, Vienna, Austria"],"affiliations":[{"raw_affiliation_string":"TU Wien, Vienna, Austria","institution_ids":["https://openalex.org/I145847075"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5085997637","display_name":"Stefan Wachter","orcid":"https://orcid.org/0000-0003-1530-7614"},"institutions":[{"id":"https://openalex.org/I145847075","display_name":"TU Wien","ror":"https://ror.org/04d836q62","country_code":"AT","type":"education","lineage":["https://openalex.org/I145847075"]}],"countries":["AT"],"is_corresponding":false,"raw_author_name":"S. Wachter","raw_affiliation_strings":["TU Wien, Vienna, Austria"],"affiliations":[{"raw_affiliation_string":"TU Wien, Vienna, Austria","institution_ids":["https://openalex.org/I145847075"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5043170458","display_name":"Vladimir V. Fedorov","orcid":"https://orcid.org/0000-0001-5547-9387"},"institutions":[{"id":"https://openalex.org/I95568926","display_name":"Ioffe Institute","ror":"https://ror.org/05dkdaa55","country_code":"RU","type":"facility","lineage":["https://openalex.org/I1313323035","https://openalex.org/I4210096333","https://openalex.org/I95568926"]}],"countries":["RU"],"is_corresponding":false,"raw_author_name":"V. V. Fedorov","raw_affiliation_strings":["Ioffe Institute, St-Petersburg, Russia"],"affiliations":[{"raw_affiliation_string":"Ioffe Institute, St-Petersburg, Russia","institution_ids":["https://openalex.org/I95568926"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5012406481","display_name":"\u0421.\u041c. \u0421\u0443\u0442\u0443\u0440\u0438\u043d","orcid":"https://orcid.org/0000-0002-3662-2384"},"institutions":[{"id":"https://openalex.org/I95568926","display_name":"Ioffe Institute","ror":"https://ror.org/05dkdaa55","country_code":"RU","type":"facility","lineage":["https://openalex.org/I1313323035","https://openalex.org/I4210096333","https://openalex.org/I95568926"]}],"countries":["RU"],"is_corresponding":false,"raw_author_name":"S. M. Suturin","raw_affiliation_strings":["Ioffe Institute, St-Petersburg, Russia"],"affiliations":[{"raw_affiliation_string":"Ioffe Institute, St-Petersburg, Russia","institution_ids":["https://openalex.org/I95568926"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5087737330","display_name":"Michael St\u00f6ger\u2010Pollach","orcid":"https://orcid.org/0000-0002-5450-4621"},"institutions":[{"id":"https://openalex.org/I145847075","display_name":"TU Wien","ror":"https://ror.org/04d836q62","country_code":"AT","type":"education","lineage":["https://openalex.org/I145847075"]}],"countries":["AT"],"is_corresponding":false,"raw_author_name":"M. Stoger-Pollach","raw_affiliation_strings":["TU Wien, Vienna, Austria"],"affiliations":[{"raw_affiliation_string":"TU Wien, Vienna, Austria","institution_ids":["https://openalex.org/I145847075"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5012113227","display_name":"Thomas Mueller","orcid":"https://orcid.org/0000-0003-1343-5719"},"institutions":[{"id":"https://openalex.org/I145847075","display_name":"TU Wien","ror":"https://ror.org/04d836q62","country_code":"AT","type":"education","lineage":["https://openalex.org/I145847075"]}],"countries":["AT"],"is_corresponding":false,"raw_author_name":"T. Mueller","raw_affiliation_strings":["TU Wien, Vienna, Austria"],"affiliations":[{"raw_affiliation_string":"TU Wien, Vienna, Austria","institution_ids":["https://openalex.org/I145847075"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5008733416","display_name":"M. I. Vexler","orcid":"https://orcid.org/0000-0002-9966-520X"},"institutions":[{"id":"https://openalex.org/I95568926","display_name":"Ioffe Institute","ror":"https://ror.org/05dkdaa55","country_code":"RU","type":"facility","lineage":["https://openalex.org/I1313323035","https://openalex.org/I4210096333","https://openalex.org/I95568926"]}],"countries":["RU"],"is_corresponding":false,"raw_author_name":"M. I. Vexler","raw_affiliation_strings":["Ioffe Institute, St-Petersburg, Russia"],"affiliations":[{"raw_affiliation_string":"Ioffe Institute, St-Petersburg, Russia","institution_ids":["https://openalex.org/I95568926"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5061817869","display_name":"N. S. Sokolov","orcid":"https://orcid.org/0000-0002-8763-3489"},"institutions":[{"id":"https://openalex.org/I95568926","display_name":"Ioffe Institute","ror":"https://ror.org/05dkdaa55","country_code":"RU","type":"facility","lineage":["https://openalex.org/I1313323035","https://openalex.org/I4210096333","https://openalex.org/I95568926"]}],"countries":["RU"],"is_corresponding":false,"raw_author_name":"N. S. Sokolov","raw_affiliation_strings":["Ioffe Institute, St-Petersburg, Russia"],"affiliations":[{"raw_affiliation_string":"Ioffe Institute, St-Petersburg, Russia","institution_ids":["https://openalex.org/I95568926"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5062594496","display_name":"Tibor Grasser","orcid":"https://orcid.org/0000-0001-6536-2238"},"institutions":[{"id":"https://openalex.org/I145847075","display_name":"TU Wien","ror":"https://ror.org/04d836q62","country_code":"AT","type":"education","lineage":["https://openalex.org/I145847075"]}],"countries":["AT"],"is_corresponding":false,"raw_author_name":"T. Grasser","raw_affiliation_strings":["TU Wien, Vienna, Austria"],"affiliations":[{"raw_affiliation_string":"TU Wien, Vienna, Austria","institution_ids":["https://openalex.org/I145847075"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":12,"corresponding_author_ids":["https://openalex.org/A5003579890"],"corresponding_institution_ids":["https://openalex.org/I145847075"],"apc_list":null,"apc_paid":null,"fwci":0.2055,"has_fulltext":false,"cited_by_count":8,"citation_normalized_percentile":{"value":0.50282429,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":94,"max":97},"biblio":{"volume":null,"issue":null,"first_page":null,"last_page":null},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12588","display_name":"Electronic and Structural Properties of Oxides","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12529","display_name":"Ga2O3 and related materials","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/nanoscopic-scale","display_name":"Nanoscopic scale","score":0.7636325359344482},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.685665488243103},{"id":"https://openalex.org/keywords/insulator","display_name":"Insulator (electricity)","score":0.61979740858078},{"id":"https://openalex.org/keywords/electronics","display_name":"Electronics","score":0.5345959067344666},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.4287472069263458},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.4212021231651306},{"id":"https://openalex.org/keywords/fluoride","display_name":"Fluoride","score":0.41379499435424805},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.19730862975120544},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.11547532677650452},{"id":"https://openalex.org/keywords/chemistry","display_name":"Chemistry","score":0.11223933100700378},{"id":"https://openalex.org/keywords/inorganic-chemistry","display_name":"Inorganic chemistry","score":0.08538326621055603}],"concepts":[{"id":"https://openalex.org/C45206210","wikidata":"https://www.wikidata.org/wiki/Q2415817","display_name":"Nanoscopic scale","level":2,"score":0.7636325359344482},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.685665488243103},{"id":"https://openalex.org/C212702","wikidata":"https://www.wikidata.org/wiki/Q178150","display_name":"Insulator (electricity)","level":2,"score":0.61979740858078},{"id":"https://openalex.org/C138331895","wikidata":"https://www.wikidata.org/wiki/Q11650","display_name":"Electronics","level":2,"score":0.5345959067344666},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.4287472069263458},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.4212021231651306},{"id":"https://openalex.org/C2780828025","wikidata":"https://www.wikidata.org/wiki/Q44793182","display_name":"Fluoride","level":2,"score":0.41379499435424805},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.19730862975120544},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.11547532677650452},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.11223933100700378},{"id":"https://openalex.org/C179104552","wikidata":"https://www.wikidata.org/wiki/Q11165","display_name":"Inorganic chemistry","level":1,"score":0.08538326621055603}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/drc50226.2020.9135160","is_oa":false,"landing_page_url":"https://doi.org/10.1109/drc50226.2020.9135160","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2020 Device Research Conference (DRC)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":14,"referenced_works":["https://openalex.org/W1964871257","https://openalex.org/W1971586968","https://openalex.org/W1977419538","https://openalex.org/W2001805053","https://openalex.org/W2003133917","https://openalex.org/W2029920236","https://openalex.org/W2041923506","https://openalex.org/W2044830704","https://openalex.org/W2068340005","https://openalex.org/W2110444559","https://openalex.org/W2112097921","https://openalex.org/W2194534706","https://openalex.org/W2611031476","https://openalex.org/W2949474005"],"related_works":["https://openalex.org/W2321888511","https://openalex.org/W2558757982","https://openalex.org/W2051287556","https://openalex.org/W2892999292","https://openalex.org/W2160050725","https://openalex.org/W2028956571","https://openalex.org/W2292675962","https://openalex.org/W1994207403","https://openalex.org/W2171212808","https://openalex.org/W1983117294"],"abstract_inverted_index":{"Two-dimensional":[0],"(2D)":[1],"electronics":[2],"can":[3,103],"enable":[4],"FETs":[5,162],"down":[6,110],"to":[7,111],"a":[8,65,112,149,167],"few":[9,113],"nanometers.":[10],"However,":[11],"these":[12],"devices":[13],"require":[14],"scalable":[15],"insulators":[16],"which":[17,87,147,176],"should":[18],"form":[19],"high-quality":[20],"interfaces":[21,44,92],"with":[22,45,93,163],"2D":[23,46,94,153],"channels":[24],"and":[25,117,126,166],"maintain":[26],"low":[27],"gate":[28],"leakage":[29],"currents":[30],"for":[31,120,152],"sub-1nm":[32],"equivalent":[33],"oxide":[34],"thickness":[35,115],"(EOT).":[36],"Previously":[37],"used":[38],"amorphous":[39],"oxides":[40],"result":[41],"in":[42],"poor":[43],"materials,":[47],"while":[48],"hBN":[49],"has":[50],"mediocre":[51],"dielectric":[52],"properties":[53],"(":[54,79],"\u03b5":[55,80],"<":[56],"5,":[57],"E":[58,83],"g":[59,84],"=":[60,81,85],"6eV)":[61],"[1]":[62],".":[63,97,131],"As":[64],"promising":[66,119],"alternative,":[67],"we":[68,133,157],"suggest":[69],"the":[70,73,99],"use":[71],"of":[72],"crystalline":[74],"ionic":[75],"insulator":[76,173],"CaF":[77,101,145,171],"2":[78,102,146,161,172],"8.43,":[82],"12.1eV)":[86],"forms":[88],"van":[89],"der":[90],"Waals":[91],"semiconductors":[95],"[2]":[96],"At":[98],"moment,":[100],"be":[104],"grown":[105],"by":[106],"molecular-beam":[107],"epitaxy":[108],"(MBE)":[109],"nanometers":[114],"[3]":[116,138],"appears":[118],"chemical":[121],"vapour":[122],"deposition":[123,128],"(CVD)":[124],"[4]":[125],"atomic-layer":[127],"(ALD)":[129],"[5]":[130],"Here":[132],"discuss":[134],"our":[135],"recent":[136],"progress":[137],",":[139,141],"[6]":[140],"[7]":[142],"on":[143],"ultra-thin":[144],"presents":[148],"universal":[150],"platform":[151],"devices.":[154],"In":[155],"particular,":[156],"demonstrate":[158],"nanoscale":[159],"MoS":[160],"L":[164],"=50-60nm":[165],"record-thin":[168],"~":[169],"2nm":[170],"(EOT~":[174],"0.9nm)":[175],"exhibits":[177],"near-ideal":[178],"subthreshold":[179],"swing":[180],"(SS).":[181]},"counts_by_year":[{"year":2025,"cited_by_count":3},{"year":2024,"cited_by_count":3},{"year":2022,"cited_by_count":2}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}