{"id":"https://openalex.org/W3041330029","doi":"https://doi.org/10.1109/drc50226.2020.9135157","title":"Phase and Carrier Polarity Control of Sputtered MoTe<sub>2</sub> by Plasma-induced Defect Engineering","display_name":"Phase and Carrier Polarity Control of Sputtered MoTe<sub>2</sub> by Plasma-induced Defect Engineering","publication_year":2020,"publication_date":"2020-06-01","ids":{"openalex":"https://openalex.org/W3041330029","doi":"https://doi.org/10.1109/drc50226.2020.9135157","mag":"3041330029"},"language":"en","primary_location":{"id":"doi:10.1109/drc50226.2020.9135157","is_oa":false,"landing_page_url":"https://doi.org/10.1109/drc50226.2020.9135157","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2020 Device Research Conference (DRC)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5062342747","display_name":"Chih\u2010Pin Lin","orcid":null},"institutions":[{"id":"https://openalex.org/I148366613","display_name":"National Yang Ming Chiao Tung University","ror":"https://ror.org/00se2k293","country_code":"TW","type":"education","lineage":["https://openalex.org/I148366613"]}],"countries":["TW"],"is_corresponding":true,"raw_author_name":"Chih-Pin Lin","raw_affiliation_strings":["Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan"],"affiliations":[{"raw_affiliation_string":"Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan","institution_ids":["https://openalex.org/I148366613"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5103993647","display_name":"Hao-Hua Hsu","orcid":null},"institutions":[{"id":"https://openalex.org/I148366613","display_name":"National Yang Ming Chiao Tung University","ror":"https://ror.org/00se2k293","country_code":"TW","type":"education","lineage":["https://openalex.org/I148366613"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Hao-Hua Hsu","raw_affiliation_strings":["Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan"],"affiliations":[{"raw_affiliation_string":"Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan","institution_ids":["https://openalex.org/I148366613"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5024381546","display_name":"Tuo\u2010Hung Hou","orcid":"https://orcid.org/0000-0002-9686-7076"},"institutions":[{"id":"https://openalex.org/I148366613","display_name":"National Yang Ming Chiao Tung University","ror":"https://ror.org/00se2k293","country_code":"TW","type":"education","lineage":["https://openalex.org/I148366613"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Tuo-Hung Hou","raw_affiliation_strings":["Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan"],"affiliations":[{"raw_affiliation_string":"Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan","institution_ids":["https://openalex.org/I148366613"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":3,"corresponding_author_ids":["https://openalex.org/A5062342747"],"corresponding_institution_ids":["https://openalex.org/I148366613"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.05238464,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"2"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10275","display_name":"2D Materials and Applications","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10275","display_name":"2D Materials and Applications","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12046","display_name":"MXene and MAX Phase Materials","score":0.9990000128746033,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10590","display_name":"Chalcogenide Semiconductor Thin Films","score":0.9965999722480774,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/plasma","display_name":"Plasma","score":0.7370214462280273},{"id":"https://openalex.org/keywords/polarity","display_name":"Polarity (international relations)","score":0.6826293468475342},{"id":"https://openalex.org/keywords/phase","display_name":"Phase (matter)","score":0.5370368957519531},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.49779272079467773},{"id":"https://openalex.org/keywords/phase-control","display_name":"Phase control","score":0.46219876408576965},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.3652636408805847},{"id":"https://openalex.org/keywords/chemistry","display_name":"Chemistry","score":0.26561975479125977},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.18876680731773376},{"id":"https://openalex.org/keywords/nuclear-physics","display_name":"Nuclear physics","score":0.13096925616264343}],"concepts":[{"id":"https://openalex.org/C82706917","wikidata":"https://www.wikidata.org/wiki/Q10251","display_name":"Plasma","level":2,"score":0.7370214462280273},{"id":"https://openalex.org/C2777361361","wikidata":"https://www.wikidata.org/wiki/Q1112585","display_name":"Polarity (international relations)","level":3,"score":0.6826293468475342},{"id":"https://openalex.org/C44280652","wikidata":"https://www.wikidata.org/wiki/Q104837","display_name":"Phase (matter)","level":2,"score":0.5370368957519531},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.49779272079467773},{"id":"https://openalex.org/C2989430983","wikidata":"https://www.wikidata.org/wiki/Q1752602","display_name":"Phase control","level":3,"score":0.46219876408576965},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.3652636408805847},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.26561975479125977},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.18876680731773376},{"id":"https://openalex.org/C185544564","wikidata":"https://www.wikidata.org/wiki/Q81197","display_name":"Nuclear physics","level":1,"score":0.13096925616264343},{"id":"https://openalex.org/C55493867","wikidata":"https://www.wikidata.org/wiki/Q7094","display_name":"Biochemistry","level":1,"score":0.0},{"id":"https://openalex.org/C1491633281","wikidata":"https://www.wikidata.org/wiki/Q7868","display_name":"Cell","level":2,"score":0.0},{"id":"https://openalex.org/C178790620","wikidata":"https://www.wikidata.org/wiki/Q11351","display_name":"Organic chemistry","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/drc50226.2020.9135157","is_oa":false,"landing_page_url":"https://doi.org/10.1109/drc50226.2020.9135157","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2020 Device Research Conference (DRC)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7","score":0.699999988079071}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":5,"referenced_works":["https://openalex.org/W1978905540","https://openalex.org/W2329895733","https://openalex.org/W2436462323","https://openalex.org/W2606210333","https://openalex.org/W2949541072"],"related_works":["https://openalex.org/W2400337198","https://openalex.org/W2354902965","https://openalex.org/W3156492509","https://openalex.org/W4253101056","https://openalex.org/W4297338612","https://openalex.org/W1971737504","https://openalex.org/W2294500472","https://openalex.org/W2391994898","https://openalex.org/W2168420112","https://openalex.org/W205176129"],"abstract_inverted_index":{"Being":[0],"able":[1],"to":[2,138],"precisely":[3],"control":[4],"the":[5,37,51,61,81,102,142],"carrier":[6],"polarity":[7],"and":[8,60,69,126,128],"conductivity":[9],"plays":[10],"a":[11,34,57,121],"vital":[12],"role":[13],"while":[14],"developing":[15],"future":[16],"two-dimensional":[17],"(2D)":[18],"transition":[19],"metal":[20],"dichalcogenides":[21],"(TMDs)-based":[22],"devices.":[23],"Achieving":[24],"such":[25],"controllability":[26],"in":[27,86,108],"TMD":[28,87],"material,":[29],"however,":[30],"remains":[31],"challenging":[32],"as":[33],"result":[35],"of":[36,50,83,104],"strong":[38],"Fermi-level":[39],"pinning":[40],"with":[41],"contact":[42],"metals":[43],"[1]":[44],".":[45,96],"MoTe":[46,109,130],"2":[47,110,131],",":[48,94],"one":[49],"group-VI":[52],"TMDs,":[53],"has":[54],"high":[55],"mobility,":[56],"moderate":[58],"bandgap,":[59],"lower":[62],"energy":[63],"difference":[64],"between":[65,124],"polymorphic":[66],"semiconducting":[67],"2H":[68,116],"metallic":[70],"1T\u2019":[71],"phases,":[72],"allowing":[73],"versatile":[74],"electrical":[75,91],"properties.":[76],"It\u2019s":[77],"known":[78],"that":[79],"controlling":[80],"number":[82],"chalcogen":[84],"defects":[85,107],"considerably":[88],"alters":[89],"its":[90],"characteristics":[92],"[2]":[93],"[3]":[95],"In":[97],"this":[98],"study,":[99],"we":[100],"report":[101],"results":[103],"engineering":[105],"Te":[106],"by":[111,141],"plasma":[112],"treatment":[113],"where":[114],"(1)":[115],"phase":[117],"is":[118],"stable":[119],"at":[120],"Te/Mo":[122],"ratio":[123],"1.88":[125],"2.13,":[127],"(2)":[129],"transistors":[132],"can":[133],"be":[134],"converted":[135],"from":[136],"p-":[137],"n-type":[139],"conduction":[140,144],"defect-induced":[143],"band":[145],"edge":[146],"(CBE)":[147],"lowering.":[148]},"counts_by_year":[],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}