{"id":"https://openalex.org/W3013230526","doi":"https://doi.org/10.1109/drc46940.2019.9046472","title":"Back-Gated Phototransistor Fabricated from Low Temperature InP Grown Directly on Amorphous Gate Oxide","display_name":"Back-Gated Phototransistor Fabricated from Low Temperature InP Grown Directly on Amorphous Gate Oxide","publication_year":2019,"publication_date":"2019-06-01","ids":{"openalex":"https://openalex.org/W3013230526","doi":"https://doi.org/10.1109/drc46940.2019.9046472","mag":"3013230526"},"language":"en","primary_location":{"id":"doi:10.1109/drc46940.2019.9046472","is_oa":false,"landing_page_url":"https://doi.org/10.1109/drc46940.2019.9046472","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2019 Device Research Conference (DRC)","raw_type":"proceedings-article"},"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5041652285","display_name":"Debarghya Sarkar","orcid":"https://orcid.org/0000-0002-5411-7066"},"institutions":[{"id":"https://openalex.org/I1334627681","display_name":"Jet Propulsion Laboratory","ror":"https://ror.org/027k65916","country_code":"US","type":"facility","lineage":["https://openalex.org/I122411786","https://openalex.org/I1334627681","https://openalex.org/I4210124779"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Debarghya Sarkar","raw_affiliation_strings":["Microdevices Laboratory, NASA Jet Propulsion Laboratory,CA,USA,91109","Microdevices Laboratory, NASA Jet Propulsion Laboratory, CA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Microdevices Laboratory, NASA Jet Propulsion Laboratory,CA,USA,91109","institution_ids":["https://openalex.org/I1334627681"]},{"raw_affiliation_string":"Microdevices Laboratory, NASA Jet Propulsion Laboratory, CA, USA","institution_ids":["https://openalex.org/I1334627681"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5034023294","display_name":"Sizhe Weng","orcid":"https://orcid.org/0000-0002-6555-2442"},"institutions":[{"id":"https://openalex.org/I1174212","display_name":"University of Southern California","ror":"https://ror.org/03taz7m60","country_code":"US","type":"education","lineage":["https://openalex.org/I1174212"]},{"id":"https://openalex.org/I2800817003","display_name":"California Southern University","ror":"https://ror.org/058zz0t50","country_code":"US","type":"education","lineage":["https://openalex.org/I2800817003"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Sizhe Weng","raw_affiliation_strings":["University of Southern,Dept of Chemical Engineering and Materials Science,California,CA,USA,90089","Dept of Chemical Engineering and Materials Science, University of Southern, California, CA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"University of Southern,Dept of Chemical Engineering and Materials Science,California,CA,USA,90089","institution_ids":["https://openalex.org/I1174212","https://openalex.org/I2800817003"]},{"raw_affiliation_string":"Dept of Chemical Engineering and Materials Science, University of Southern, California, CA, USA","institution_ids":["https://openalex.org/I1174212"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101433083","display_name":"Yunpeng Xu","orcid":"https://orcid.org/0000-0002-0406-1930"},"institutions":[{"id":"https://openalex.org/I1174212","display_name":"University of Southern California","ror":"https://ror.org/03taz7m60","country_code":"US","type":"education","lineage":["https://openalex.org/I1174212"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Yunpeng Xu","raw_affiliation_strings":["University of Southern,Ming Hsieh Dept of Electrical and Computer Engineering,California,CA,USA,90089","Ming Hsieh Dept of Electrical and Computer Engineering, University of Southern, California, CA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"University of Southern,Ming Hsieh Dept of Electrical and Computer Engineering,California,CA,USA,90089","institution_ids":["https://openalex.org/I1174212"]},{"raw_affiliation_string":"Ming Hsieh Dept of Electrical and Computer Engineering, University of Southern, California, CA, USA","institution_ids":["https://openalex.org/I1174212"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5062470928","display_name":"Frank Greer","orcid":"https://orcid.org/0009-0001-2198-9861"},"institutions":[{"id":"https://openalex.org/I1334627681","display_name":"Jet Propulsion Laboratory","ror":"https://ror.org/027k65916","country_code":"US","type":"facility","lineage":["https://openalex.org/I122411786","https://openalex.org/I1334627681","https://openalex.org/I4210124779"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Frank Greer","raw_affiliation_strings":["Microdevices Laboratory, NASA Jet Propulsion Laboratory,CA,USA,91109"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Microdevices Laboratory, NASA Jet Propulsion Laboratory,CA,USA,91109","institution_ids":["https://openalex.org/I1334627681"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5017699198","display_name":"Rehan Kapadia","orcid":"https://orcid.org/0000-0002-7611-0551"},"institutions":[{"id":"https://openalex.org/I1174212","display_name":"University of Southern California","ror":"https://ror.org/03taz7m60","country_code":"US","type":"education","lineage":["https://openalex.org/I1174212"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Rehan Kapadia","raw_affiliation_strings":["University of Southern,Ming Hsieh Dept of Electrical and Computer Engineering,California,CA,USA,90089","Ming Hsieh Dept of Electrical and Computer Engineering, University of Southern, California, CA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"University of Southern,Ming Hsieh Dept of Electrical and Computer Engineering,California,CA,USA,90089","institution_ids":["https://openalex.org/I1174212"]},{"raw_affiliation_string":"Ming Hsieh Dept of Electrical and Computer Engineering, University of Southern, California, CA, USA","institution_ids":["https://openalex.org/I1174212"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":3,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.32745452,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":"73","last_page":"74"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11272","display_name":"Nanowire Synthesis and Applications","score":0.9990000128746033,"subfield":{"id":"https://openalex.org/subfields/2204","display_name":"Biomedical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11272","display_name":"Nanowire Synthesis and Applications","score":0.9990000128746033,"subfield":{"id":"https://openalex.org/subfields/2204","display_name":"Biomedical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9983000159263611,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10022","display_name":"Semiconductor Quantum Structures and Devices","score":0.996999979019165,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.7723139524459839},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.7348759174346924},{"id":"https://openalex.org/keywords/photodiode","display_name":"Photodiode","score":0.6238561272621155},{"id":"https://openalex.org/keywords/metalorganic-vapour-phase-epitaxy","display_name":"Metalorganic vapour phase epitaxy","score":0.6004377603530884},{"id":"https://openalex.org/keywords/amorphous-solid","display_name":"Amorphous solid","score":0.6000034213066101},{"id":"https://openalex.org/keywords/crystallite","display_name":"Crystallite","score":0.4747253656387329},{"id":"https://openalex.org/keywords/integrated-circuit","display_name":"Integrated circuit","score":0.43926364183425903},{"id":"https://openalex.org/keywords/semiconductor","display_name":"Semiconductor","score":0.41844022274017334},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.28711485862731934},{"id":"https://openalex.org/keywords/epitaxy","display_name":"Epitaxy","score":0.20165520906448364},{"id":"https://openalex.org/keywords/layer","display_name":"Layer (electronics)","score":0.0953652560710907},{"id":"https://openalex.org/keywords/chemistry","display_name":"Chemistry","score":0.08286640048027039},{"id":"https://openalex.org/keywords/crystallography","display_name":"Crystallography","score":0.07623746991157532}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7723139524459839},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.7348759174346924},{"id":"https://openalex.org/C751236","wikidata":"https://www.wikidata.org/wiki/Q175943","display_name":"Photodiode","level":2,"score":0.6238561272621155},{"id":"https://openalex.org/C175665537","wikidata":"https://www.wikidata.org/wiki/Q1924991","display_name":"Metalorganic vapour phase epitaxy","level":4,"score":0.6004377603530884},{"id":"https://openalex.org/C56052488","wikidata":"https://www.wikidata.org/wiki/Q103382","display_name":"Amorphous solid","level":2,"score":0.6000034213066101},{"id":"https://openalex.org/C137637335","wikidata":"https://www.wikidata.org/wiki/Q899604","display_name":"Crystallite","level":2,"score":0.4747253656387329},{"id":"https://openalex.org/C530198007","wikidata":"https://www.wikidata.org/wiki/Q80831","display_name":"Integrated circuit","level":2,"score":0.43926364183425903},{"id":"https://openalex.org/C108225325","wikidata":"https://www.wikidata.org/wiki/Q11456","display_name":"Semiconductor","level":2,"score":0.41844022274017334},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.28711485862731934},{"id":"https://openalex.org/C110738630","wikidata":"https://www.wikidata.org/wiki/Q1135540","display_name":"Epitaxy","level":3,"score":0.20165520906448364},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0953652560710907},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.08286640048027039},{"id":"https://openalex.org/C8010536","wikidata":"https://www.wikidata.org/wiki/Q160398","display_name":"Crystallography","level":1,"score":0.07623746991157532},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/drc46940.2019.9046472","is_oa":false,"landing_page_url":"https://doi.org/10.1109/drc46940.2019.9046472","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2019 Device Research Conference (DRC)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/9","display_name":"Industry, innovation and infrastructure","score":0.49000000953674316}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":2,"referenced_works":["https://openalex.org/W2059264281","https://openalex.org/W2344763581"],"related_works":["https://openalex.org/W1977514416","https://openalex.org/W1508801824","https://openalex.org/W3103825119","https://openalex.org/W2355862987","https://openalex.org/W2105026576","https://openalex.org/W4366087129","https://openalex.org/W2033236975","https://openalex.org/W2017747815","https://openalex.org/W2140280965","https://openalex.org/W2184010844"],"abstract_inverted_index":{"One":[0],"of":[1,22,30,55,92,98],"the":[2,11,20,56,74,86,90,95,103,111],"major":[3],"challenges":[4],"for":[5,85],"realizing":[6],"3D":[7],"integrated":[8],"circuits":[9],"is":[10],"ability":[12],"to":[13],"integrate":[14],"single":[15,64],"crystal":[16,65],"semiconductor":[17,67],"devices":[18],"on":[19,46,69,110],"back-end":[21],"functional":[23],"device":[24,96],"layers":[25],"within":[26],"a":[27,99],"thermal":[28],"budget":[29],"~400\u00b0C.":[31],"While":[32],"traditional":[33],"III-V":[34],"growth":[35,45,68],"processes":[36],"such":[37],"as":[38],"MOCVD":[39],"and":[40,116],"MBE":[41],"would":[42],"give":[43],"polycrystalline":[44],"amorphous":[47,71],"substrates,":[48],"it":[49],"has":[50],"been":[51],"demonstrated":[52],"in":[53],"some":[54],"previous":[57],"works":[58],"[1]-[4],":[59],"that":[60],"we":[61,83],"can":[62],"achieve":[63],"compound":[66],"diverse":[70],"substrates":[72],"using":[73],"TLP":[75,108],"(templated":[76],"liquid":[77],"phase)":[78],"approach.":[79],"In":[80],"this":[81],"work,":[82],"report":[84],"first":[87],"time":[88],"(to":[89],"best":[91],"our":[93],"knowledge),":[94],"performance":[97],"back-gated":[100],"phototransistor":[101],"with":[102,119],"InP":[104],"channel":[105],"grown":[106],"by":[107],"directly":[109],"gate":[112],"oxide":[113],"at":[114,123],"300\u00b0C,":[115],"entirely":[117],"fabricated":[118],"all":[120],"processing":[121],"steps":[122],"or":[124],"below":[125],"300\u00b0C.":[126]},"counts_by_year":[],"updated_date":"2026-07-29T14:22:42.915294","created_date":"2025-10-10T00:00:00"}