{"id":"https://openalex.org/W3013658718","doi":"https://doi.org/10.1109/drc46940.2019.9046434","title":"Steep Subthreshold Swing Originating from Gate Delay","display_name":"Steep Subthreshold Swing Originating from Gate Delay","publication_year":2019,"publication_date":"2019-06-01","ids":{"openalex":"https://openalex.org/W3013658718","doi":"https://doi.org/10.1109/drc46940.2019.9046434","mag":"3013658718"},"language":"en","primary_location":{"id":"doi:10.1109/drc46940.2019.9046434","is_oa":false,"landing_page_url":"https://doi.org/10.1109/drc46940.2019.9046434","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2019 Device Research Conference (DRC)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5047596394","display_name":"Paolo Paletti","orcid":"https://orcid.org/0000-0002-8131-6538"},"institutions":[{"id":"https://openalex.org/I107639228","display_name":"University of Notre Dame","ror":"https://ror.org/00mkhxb43","country_code":"US","type":"education","lineage":["https://openalex.org/I107639228"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"P. Paletti","raw_affiliation_strings":["University of Notre Dame,Notre Dame,IN,USA,46556","University of Notre Dame, Notre Dame, IN, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"University of Notre Dame,Notre Dame,IN,USA,46556","institution_ids":["https://openalex.org/I107639228"]},{"raw_affiliation_string":"University of Notre Dame, Notre Dame, IN, USA","institution_ids":["https://openalex.org/I107639228"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5062127672","display_name":"Mina Asghari Heidarlou","orcid":"https://orcid.org/0000-0002-9841-6359"},"institutions":[{"id":"https://openalex.org/I107639228","display_name":"University of Notre Dame","ror":"https://ror.org/00mkhxb43","country_code":"US","type":"education","lineage":["https://openalex.org/I107639228"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"M. Asghari Heidarlou","raw_affiliation_strings":["University of Notre Dame,Notre Dame,IN,USA,46556","University of Notre Dame, Notre Dame, IN, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"University of Notre Dame,Notre Dame,IN,USA,46556","institution_ids":["https://openalex.org/I107639228"]},{"raw_affiliation_string":"University of Notre Dame, Notre Dame, IN, USA","institution_ids":["https://openalex.org/I107639228"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5077208874","display_name":"Karla Adriana Gonzalez-Serrano","orcid":"https://orcid.org/0000-0002-2755-8122"},"institutions":[{"id":"https://openalex.org/I107639228","display_name":"University of Notre Dame","ror":"https://ror.org/00mkhxb43","country_code":"US","type":"education","lineage":["https://openalex.org/I107639228"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"K. Gonzalez Serrano","raw_affiliation_strings":["University of Notre Dame,Notre Dame,IN,USA,46556","University of Notre Dame, Notre Dame, IN, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"University of Notre Dame,Notre Dame,IN,USA,46556","institution_ids":["https://openalex.org/I107639228"]},{"raw_affiliation_string":"University of Notre Dame, Notre Dame, IN, USA","institution_ids":["https://openalex.org/I107639228"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5032419942","display_name":"Cristobal Alessandri","orcid":"https://orcid.org/0000-0002-2527-5292"},"institutions":[{"id":"https://openalex.org/I107639228","display_name":"University of Notre Dame","ror":"https://ror.org/00mkhxb43","country_code":"US","type":"education","lineage":["https://openalex.org/I107639228"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"C. Alessandri","raw_affiliation_strings":["University of Notre Dame,Notre Dame,IN,USA,46556","University of Notre Dame, Notre Dame, IN, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"University of Notre Dame,Notre Dame,IN,USA,46556","institution_ids":["https://openalex.org/I107639228"]},{"raw_affiliation_string":"University of Notre Dame, Notre Dame, IN, USA","institution_ids":["https://openalex.org/I107639228"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5053232492","display_name":"Alan Seabaugh","orcid":"https://orcid.org/0000-0001-6907-4129"},"institutions":[{"id":"https://openalex.org/I107639228","display_name":"University of Notre Dame","ror":"https://ror.org/00mkhxb43","country_code":"US","type":"education","lineage":["https://openalex.org/I107639228"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"A. Seabaugh","raw_affiliation_strings":["University of Notre Dame,Notre Dame,IN,USA,46556","University of Notre Dame, Notre Dame, IN, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"University of Notre Dame,Notre Dame,IN,USA,46556","institution_ids":["https://openalex.org/I107639228"]},{"raw_affiliation_string":"University of Notre Dame, Notre Dame, IN, USA","institution_ids":["https://openalex.org/I107639228"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":5,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.1211,"has_fulltext":false,"cited_by_count":1,"citation_normalized_percentile":{"value":0.5120398,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":94},"biblio":{"volume":null,"issue":null,"first_page":"53","last_page":"54"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.6702074408531189},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.6427765488624573},{"id":"https://openalex.org/keywords/slew-rate","display_name":"Slew rate","score":0.6027892827987671},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.5907930135726929},{"id":"https://openalex.org/keywords/gate-dielectric","display_name":"Gate dielectric","score":0.5643812417984009},{"id":"https://openalex.org/keywords/equivalent-series-resistance","display_name":"Equivalent series resistance","score":0.5303659439086914},{"id":"https://openalex.org/keywords/ionic-bonding","display_name":"Ionic bonding","score":0.4496793746948242},{"id":"https://openalex.org/keywords/field-effect-transistor","display_name":"Field-effect transistor","score":0.44658994674682617},{"id":"https://openalex.org/keywords/semiconductor","display_name":"Semiconductor","score":0.4423843026161194},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.39175471663475037},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.3882739245891571},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.19906795024871826},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.13349905610084534},{"id":"https://openalex.org/keywords/ion","display_name":"Ion","score":0.11238154768943787}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6702074408531189},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.6427765488624573},{"id":"https://openalex.org/C82517063","wikidata":"https://www.wikidata.org/wiki/Q1591315","display_name":"Slew rate","level":3,"score":0.6027892827987671},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5907930135726929},{"id":"https://openalex.org/C166972891","wikidata":"https://www.wikidata.org/wiki/Q5527011","display_name":"Gate dielectric","level":4,"score":0.5643812417984009},{"id":"https://openalex.org/C14485415","wikidata":"https://www.wikidata.org/wiki/Q5384730","display_name":"Equivalent series resistance","level":3,"score":0.5303659439086914},{"id":"https://openalex.org/C2182769","wikidata":"https://www.wikidata.org/wiki/Q62500","display_name":"Ionic bonding","level":3,"score":0.4496793746948242},{"id":"https://openalex.org/C145598152","wikidata":"https://www.wikidata.org/wiki/Q176097","display_name":"Field-effect transistor","level":4,"score":0.44658994674682617},{"id":"https://openalex.org/C108225325","wikidata":"https://www.wikidata.org/wiki/Q11456","display_name":"Semiconductor","level":2,"score":0.4423843026161194},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.39175471663475037},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.3882739245891571},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.19906795024871826},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.13349905610084534},{"id":"https://openalex.org/C145148216","wikidata":"https://www.wikidata.org/wiki/Q36496","display_name":"Ion","level":2,"score":0.11238154768943787},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/drc46940.2019.9046434","is_oa":false,"landing_page_url":"https://doi.org/10.1109/drc46940.2019.9046434","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2019 Device Research Conference (DRC)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.6100000143051147,"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":4,"referenced_works":["https://openalex.org/W2053748143","https://openalex.org/W2580914930","https://openalex.org/W2792341840","https://openalex.org/W2809143346"],"related_works":["https://openalex.org/W2014419659","https://openalex.org/W2029904754","https://openalex.org/W2075569182","https://openalex.org/W170188723","https://openalex.org/W2115314666","https://openalex.org/W2099162222","https://openalex.org/W4285408939","https://openalex.org/W1989271320","https://openalex.org/W2031160685","https://openalex.org/W2054436653"],"abstract_inverted_index":{"Complex":[0],"gate":[1,39,78],"dielectrics":[2],"are":[3],"being":[4],"widely":[5],"explored":[6],"to":[7,12,80,123,131],"provide":[8],"voltage":[9],"amplification":[10],"leading":[11],"steep":[13,25],"subthreshold":[14],"swing":[15],"(SS)":[16],"in":[17,37,83,117],"transistors":[18],"[1].":[19],"Here":[20],"we":[21],"show":[22],"that":[23],"hysteretic":[24],"SS":[26,66],"can":[27],"arise":[28],"simply":[29],"from":[30,90],"the":[31,38,64,86,91,96,100,106,114,125,127],"introduction":[32],"of":[33,40,53,99],"a":[34,41,48],"series":[35,87],"resistance":[36,88],"metal-oxide-semiconductor":[42],"field-effect":[43],"transistor":[44,120],"(MOSFET),":[45],"i.e.":[46],"as":[47,67],"dynamic":[49],"effect.":[50],"The":[51],"choice":[52],"measurement":[54],"slew":[55,59],"rate":[56],"(SR)":[57],"and":[58,138],"direction":[60],"then":[61],"directly":[62],"affects":[63],"measured":[65],"has":[68],"been":[69],"previously":[70],"reported":[71],"[2].":[72],"We":[73],"use":[74],"an":[75,118],"ionic":[76,92,115],"polymer":[77,116],"dielectric":[79],"illustrate":[81,124],"how":[82],"this":[84],"case":[85],"arises":[89],"conductance,":[93],"which":[94],"controls":[95],"time":[97],"response":[98],"electric":[101],"double":[102],"layer":[103],"(EDL)":[104],"at":[105],"polymer/metal":[107],"[3]":[108],"or":[109],"polymer/semiconductor":[110],"interface":[111],"[4].":[112],"While":[113],"EDL":[119],"is":[121],"used":[122],"effects,":[126],"principles":[128],"apply":[129],"generally":[130],"other":[132],"complex":[133],"insulating":[134],"gates":[135],"including":[136],"ferroelectrics":[137],"piezoelectrics.":[139]},"counts_by_year":[{"year":2019,"cited_by_count":1}],"updated_date":"2026-06-11T09:08:48.828518","created_date":"2025-10-10T00:00:00"}