{"id":"https://openalex.org/W3013697767","doi":"https://doi.org/10.1109/drc46940.2019.9046346","title":"Cryogenic Response of HKMG MOSFETs for Quantum Computing Systems","display_name":"Cryogenic Response of HKMG MOSFETs for Quantum Computing Systems","publication_year":2019,"publication_date":"2019-06-01","ids":{"openalex":"https://openalex.org/W3013697767","doi":"https://doi.org/10.1109/drc46940.2019.9046346","mag":"3013697767"},"language":"en","primary_location":{"id":"doi:10.1109/drc46940.2019.9046346","is_oa":false,"landing_page_url":"https://doi.org/10.1109/drc46940.2019.9046346","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2019 Device Research Conference (DRC)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5070188515","display_name":"Wriddhi Chakraborty","orcid":"https://orcid.org/0000-0003-3682-2420"},"institutions":[{"id":"https://openalex.org/I107639228","display_name":"University of Notre Dame","ror":"https://ror.org/00mkhxb43","country_code":"US","type":"education","lineage":["https://openalex.org/I107639228"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"Wriddhi Chakraborty","raw_affiliation_strings":["University of Notre Dame, Notre Dame, IN, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"University of Notre Dame, Notre Dame, IN, USA","institution_ids":["https://openalex.org/I107639228"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5075633314","display_name":"Kai Ni","orcid":"https://orcid.org/0000-0002-3628-3431"},"institutions":[{"id":"https://openalex.org/I107639228","display_name":"University of Notre Dame","ror":"https://ror.org/00mkhxb43","country_code":"US","type":"education","lineage":["https://openalex.org/I107639228"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Kai Ni","raw_affiliation_strings":["University of Notre Dame, Notre Dame, IN, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"University of Notre Dame, Notre Dame, IN, USA","institution_ids":["https://openalex.org/I107639228"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5040063710","display_name":"Sourav Dutta","orcid":"https://orcid.org/0000-0001-5722-7909"},"institutions":[{"id":"https://openalex.org/I107639228","display_name":"University of Notre Dame","ror":"https://ror.org/00mkhxb43","country_code":"US","type":"education","lineage":["https://openalex.org/I107639228"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Sourav Dutta","raw_affiliation_strings":["University of Notre Dame, Notre Dame, IN, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"University of Notre Dame, Notre Dame, IN, USA","institution_ids":["https://openalex.org/I107639228"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5051038074","display_name":"Benjamin Grisafe","orcid":"https://orcid.org/0000-0002-4271-3071"},"institutions":[{"id":"https://openalex.org/I107639228","display_name":"University of Notre Dame","ror":"https://ror.org/00mkhxb43","country_code":"US","type":"education","lineage":["https://openalex.org/I107639228"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Benjamin Grisafe","raw_affiliation_strings":["University of Notre Dame, Notre Dame, IN, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"University of Notre Dame, Notre Dame, IN, USA","institution_ids":["https://openalex.org/I107639228"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5039196359","display_name":"J. A. Smith","orcid":"https://orcid.org/0000-0002-1280-0342"},"institutions":[{"id":"https://openalex.org/I107639228","display_name":"University of Notre Dame","ror":"https://ror.org/00mkhxb43","country_code":"US","type":"education","lineage":["https://openalex.org/I107639228"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Jeffrey Smith","raw_affiliation_strings":["University of Notre Dame, Notre Dame, IN, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"University of Notre Dame, Notre Dame, IN, USA","institution_ids":["https://openalex.org/I107639228"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5036105393","display_name":"Suman Datta","orcid":"https://orcid.org/0000-0001-6044-5173"},"institutions":[{"id":"https://openalex.org/I107639228","display_name":"University of Notre Dame","ror":"https://ror.org/00mkhxb43","country_code":"US","type":"education","lineage":["https://openalex.org/I107639228"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Suman Datta","raw_affiliation_strings":["University of Notre Dame, Notre Dame, IN, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"University of Notre Dame, Notre Dame, IN, USA","institution_ids":["https://openalex.org/I107639228"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":6,"corresponding_author_ids":["https://openalex.org/A5070188515"],"corresponding_institution_ids":["https://openalex.org/I107639228"],"apc_list":null,"apc_paid":null,"fwci":0.7265,"has_fulltext":false,"cited_by_count":11,"citation_normalized_percentile":{"value":0.7315715,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":98},"biblio":{"volume":null,"issue":null,"first_page":"115","last_page":"116"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10382","display_name":"Quantum and electron transport phenomena","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.6578361988067627},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.5832209587097168},{"id":"https://openalex.org/keywords/threshold-voltage","display_name":"Threshold voltage","score":0.5610506534576416},{"id":"https://openalex.org/keywords/interface","display_name":"Interface (matter)","score":0.5099483728408813},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.4714459180831909},{"id":"https://openalex.org/keywords/quantum-capacitance","display_name":"Quantum capacitance","score":0.4584261178970337},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.4378601312637329},{"id":"https://openalex.org/keywords/logic-gate","display_name":"Logic gate","score":0.4344910681247711},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.4144081473350525},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.3868643343448639},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.3610870838165283},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.2678352892398834},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.21215757727622986},{"id":"https://openalex.org/keywords/quantum-mechanics","display_name":"Quantum mechanics","score":0.09913167357444763}],"concepts":[{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.6578361988067627},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5832209587097168},{"id":"https://openalex.org/C195370968","wikidata":"https://www.wikidata.org/wiki/Q1754002","display_name":"Threshold voltage","level":4,"score":0.5610506534576416},{"id":"https://openalex.org/C113843644","wikidata":"https://www.wikidata.org/wiki/Q901882","display_name":"Interface (matter)","level":4,"score":0.5099483728408813},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.4714459180831909},{"id":"https://openalex.org/C2780101641","wikidata":"https://www.wikidata.org/wiki/Q4218495","display_name":"Quantum capacitance","level":4,"score":0.4584261178970337},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.4378601312637329},{"id":"https://openalex.org/C131017901","wikidata":"https://www.wikidata.org/wiki/Q170451","display_name":"Logic gate","level":2,"score":0.4344910681247711},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.4144081473350525},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.3868643343448639},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.3610870838165283},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.2678352892398834},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.21215757727622986},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.09913167357444763},{"id":"https://openalex.org/C55352822","wikidata":"https://www.wikidata.org/wiki/Q5558978","display_name":"Gibbs isotherm","level":3,"score":0.0},{"id":"https://openalex.org/C8892853","wikidata":"https://www.wikidata.org/wiki/Q170749","display_name":"Surface tension","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/drc46940.2019.9046346","is_oa":false,"landing_page_url":"https://doi.org/10.1109/drc46940.2019.9046346","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2019 Device Research Conference (DRC)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","score":0.8999999761581421,"id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":5,"referenced_works":["https://openalex.org/W2127455631","https://openalex.org/W2755984005","https://openalex.org/W2794745494","https://openalex.org/W2805323336","https://openalex.org/W3106271585"],"related_works":["https://openalex.org/W3014521742","https://openalex.org/W2620449122","https://openalex.org/W2617868873","https://openalex.org/W3204141294","https://openalex.org/W4241238243","https://openalex.org/W2170979950","https://openalex.org/W1900707063","https://openalex.org/W2588941787","https://openalex.org/W2071775671","https://openalex.org/W2090785798"],"abstract_inverted_index":{"Hardware":[0],"implementation":[1],"of":[2,8,23,26,44,61,98,106,114,124,168],"Quantum":[3],"Processors":[4],"require":[5],"monolithic":[6],"integration":[7],"CMOS":[9],"controller":[10],"and":[11,28,56,90,120,154],"read-out":[12],"interface":[13,45,81,115,126,149,174],"circuits,":[14],"operating":[15],"at":[16,67,92],"cryogenic":[17,68,93],"temperatures":[18],"(1-6K),":[19],"to":[20,77,103],"enable":[21],"scale-up":[22],"the":[24,41,52,88,96,99,104,107,112,125,159],"number":[25],"Q-bits":[27],"energy-efficient":[29],"noise-tolerant":[30],"circuit":[31],"operation":[32],"[1]":[33],"(Fig.":[34,135],"1a).":[35],"In":[36],"this":[37],"work,":[38],"we":[39],"investigate":[40],"critical":[42],"role":[43],"traps":[46,116,150],"near":[47,152],"band-edge":[48],"that":[49,75,85],"affect":[50,86],"both":[51,87],"sub-threshold":[53],"swing":[54],"(SS)":[55],"threshold":[57],"voltage":[58],"(":[59],"(VTH))":[60],"high-K":[62],"metal-gate":[63],"(HKMG)":[64],"n-channel":[65],"MOSFETs":[66],"temperature.":[69],"We":[70,137],"highlight":[71],"two":[72],"fundamental":[73],"mechanisms":[74],"contribute":[76],"an":[78,163],"increase":[79],"in":[80,133,176],"trap":[82,127],"capacitance":[83],"(Cit)":[84],"SS":[89],"(VTH)":[91],"temperatures:":[94],"(a)":[95],"proximity":[97],"surface":[100],"Fermi-level":[101],"(EF)":[102],"edge":[105],"conduction":[108],"band":[109],"(EC),":[110],"where":[111],"density":[113],"(Dit)":[117],"is":[118],"higher,":[119],"(b)":[121],"higher":[122],"sensitivity":[123],"response":[128],"for":[129,173],"a":[130,139],"given":[131],"change":[132],"EF":[134],"1b).":[136],"developed":[138],"physics-based":[140],"cryo-CMOS":[141,170],"transistor":[142],"model":[143],"[2],":[144],"by":[145],"incorporating":[146],"multiple":[147],"discrete":[148],"located":[151],"HC":[153],"show":[155],"excellent":[156],"agreement":[157],"with":[158],"experiments.":[160],"This":[161],"provides":[162],"important":[164],"step":[165],"towards":[166],"optimization":[167],"future":[169],"technology":[171],"necessary":[172],"circuits":[175],"quantum":[177],"processors.":[178]},"counts_by_year":[{"year":2026,"cited_by_count":1},{"year":2025,"cited_by_count":1},{"year":2024,"cited_by_count":2},{"year":2023,"cited_by_count":1},{"year":2022,"cited_by_count":1},{"year":2021,"cited_by_count":5}],"updated_date":"2026-05-08T15:41:06.802602","created_date":"2025-10-10T00:00:00"}