{"id":"https://openalex.org/W3013024590","doi":"https://doi.org/10.1109/drc46940.2019.9046338","title":"High Mobility and Drive Current ZnO Thin Film Transistors","display_name":"High Mobility and Drive Current ZnO Thin Film Transistors","publication_year":2019,"publication_date":"2019-06-01","ids":{"openalex":"https://openalex.org/W3013024590","doi":"https://doi.org/10.1109/drc46940.2019.9046338","mag":"3013024590"},"language":"en","primary_location":{"id":"doi:10.1109/drc46940.2019.9046338","is_oa":false,"landing_page_url":"https://doi.org/10.1109/drc46940.2019.9046338","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2019 Device Research Conference (DRC)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5113898510","display_name":"Sang Ha Yoo","orcid":null},"institutions":[{"id":"https://openalex.org/I130769515","display_name":"Pennsylvania State University","ror":"https://ror.org/04p491231","country_code":"US","type":"education","lineage":["https://openalex.org/I130769515"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Sang H. Yoo","raw_affiliation_strings":["Penn State University,Department of Chemical Engineering,University Park,PA,U.S.A.,16802","Department of Chemical Engineering, Penn State University, University Park, PA, U.S.A"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Penn State University,Department of Chemical Engineering,University Park,PA,U.S.A.,16802","institution_ids":["https://openalex.org/I130769515"]},{"raw_affiliation_string":"Department of Chemical Engineering, Penn State University, University Park, PA, U.S.A","institution_ids":["https://openalex.org/I130769515"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5051272539","display_name":"Enrique D. Gomez","orcid":"https://orcid.org/0000-0001-8942-4480"},"institutions":[{"id":"https://openalex.org/I130769515","display_name":"Pennsylvania State University","ror":"https://ror.org/04p491231","country_code":"US","type":"education","lineage":["https://openalex.org/I130769515"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Enrique D. Gomez","raw_affiliation_strings":["Penn State University,Department of Chemical Engineering,University Park,PA,U.S.A.,16802","Department of Chemical Engineering, Penn State University, University Park, PA, U.S.A"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Penn State University,Department of Chemical Engineering,University Park,PA,U.S.A.,16802","institution_ids":["https://openalex.org/I130769515"]},{"raw_affiliation_string":"Department of Chemical Engineering, Penn State University, University Park, PA, U.S.A","institution_ids":["https://openalex.org/I130769515"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5059843180","display_name":"Thomas N. Jackson","orcid":"https://orcid.org/0000-0003-2272-5830"},"institutions":[{"id":"https://openalex.org/I4210143726","display_name":"Advanced Materials and Devices (United States)","ror":"https://ror.org/04ntc3565","country_code":"US","type":"company","lineage":["https://openalex.org/I4210143726"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Thomas N. Jackson","raw_affiliation_strings":["Center for Thin Film Devices and Materials Research Institute,Department of Electrical Engineering","Department of Electrical Engineering, Center for Thin Film Devices and Materials Research Institute"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Center for Thin Film Devices and Materials Research Institute,Department of Electrical Engineering","institution_ids":["https://openalex.org/I4210143726"]},{"raw_affiliation_string":"Department of Electrical Engineering, Center for Thin Film Devices and Materials Research Institute","institution_ids":[]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":3,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.1211,"has_fulltext":false,"cited_by_count":1,"citation_normalized_percentile":{"value":0.5118396,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":94},"biblio":{"volume":null,"issue":null,"first_page":"43","last_page":"44"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10623","display_name":"Thin-Film Transistor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10623","display_name":"Thin-Film Transistor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10090","display_name":"ZnO doping and properties","score":0.9944000244140625,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11992","display_name":"CCD and CMOS Imaging Sensors","score":0.9758999943733215,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/thin-film-transistor","display_name":"Thin-film transistor","score":0.7135809063911438},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.6754063367843628},{"id":"https://openalex.org/keywords/atomic-layer-deposition","display_name":"Atomic layer deposition","score":0.5710708498954773},{"id":"https://openalex.org/keywords/passivation","display_name":"Passivation","score":0.5535019636154175},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.5280265212059021},{"id":"https://openalex.org/keywords/layer","display_name":"Layer (electronics)","score":0.366555392742157},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.35298463702201843}],"concepts":[{"id":"https://openalex.org/C87359718","wikidata":"https://www.wikidata.org/wiki/Q1271916","display_name":"Thin-film transistor","level":3,"score":0.7135809063911438},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6754063367843628},{"id":"https://openalex.org/C69544855","wikidata":"https://www.wikidata.org/wiki/Q757625","display_name":"Atomic layer deposition","level":3,"score":0.5710708498954773},{"id":"https://openalex.org/C33574316","wikidata":"https://www.wikidata.org/wiki/Q917260","display_name":"Passivation","level":3,"score":0.5535019636154175},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5280265212059021},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.366555392742157},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.35298463702201843}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/drc46940.2019.9046338","is_oa":false,"landing_page_url":"https://doi.org/10.1109/drc46940.2019.9046338","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2019 Device Research Conference (DRC)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Industry, innovation and infrastructure","score":0.550000011920929,"id":"https://metadata.un.org/sdg/9"}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":4,"referenced_works":["https://openalex.org/W2109515598","https://openalex.org/W2170332946","https://openalex.org/W2293548886","https://openalex.org/W2330817459"],"related_works":["https://openalex.org/W2893117232","https://openalex.org/W2368982584","https://openalex.org/W957405543","https://openalex.org/W2100154643","https://openalex.org/W81629128","https://openalex.org/W2346736220","https://openalex.org/W2172040372","https://openalex.org/W2949072884","https://openalex.org/W2749472015","https://openalex.org/W2024991754"],"abstract_inverted_index":{"Thin":[0],"film":[1],"transistors":[2],"(TFTs)":[3],"are":[4],"widely":[5],"utilized":[6],"in":[7],"the":[8,144],"display":[9],"industry":[10],"as":[11,36],"select":[12],"devices":[13,81,116],"for":[14,21,25,110,119],"pixel":[15],"data":[16],"and":[17,24,27,42,55,61,93,117,161,182],"also":[18],"have":[19,46,73,125],"potential":[20],"3D":[22],"ICs":[23],"flexible":[26],"large":[28],"area":[29],"electronic":[30],"applications.":[31,95],"Recently,":[32],"oxide":[33,40,44,114],"semiconductors":[34],"such":[35],"indium":[37],"gallium":[38],"zinc":[39,43],"(IGZO)":[41],"(ZnO)":[45],"gained":[47],"interest":[48],"because":[49],"they":[50],"can":[51],"provide":[52],"improved":[53],"mobility":[54,72],"stability":[56],"compared":[57,65],"to":[58,66,98],"amorphous":[59],"silicon":[60],"reduced":[62],"manufacturing":[63,112],"cost":[64],"polysilicon.":[67],"ZnO":[68,148,150,158],"TFTs":[69,151],"with":[70,152],"field-effect":[71,183],"been":[74],"demonstrated,":[75],"<sup":[76],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[77,135,164,171,175],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">[1]</sup>":[78],"but":[79],"these":[80],"were":[82],"fabricated":[83],"using":[84,131],"pulsed":[85],"laser":[86],"deposition":[87,103,108],"(PLD),":[88],"which":[89],"may":[90],"limit":[91],"large-area":[92],"low-cost":[94],"In":[96,121],"contrast":[97],"PLD,":[99],"plasma-enhanced":[100],"atomic":[101],"layer":[102,141,178],"(PEALD)":[104],"is":[105],"an":[106],"attractive":[107],"technique":[109],"high-volume":[111],"of":[113,146],"semiconductor":[115],"especially":[118],"ZnO.":[120],"this":[122],"work,":[123],"we":[124],"demonstrated":[126],"a":[127,132],"simple":[128],"process":[129],"modification":[130],"N":[133,162],"<sub":[134,163,170,174],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">2</sub>":[136,165,172],"O":[137,166,173],"plasma":[138],"based":[139],"passivation":[140,177],"that":[142],"improves":[143],"performance":[145],"PEALD":[147,157,168],"TFTs.":[149],"5":[153],"\u03bcm":[154],"channel":[155],"lengths,":[156],"active":[159],"layer,":[160],"plasma-based":[167],"Al":[169],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">3</sub>":[176],"exhibit":[179],"drive":[180],"currents":[181],"mobilities":[184],".":[185]},"counts_by_year":[{"year":2021,"cited_by_count":1}],"updated_date":"2026-06-11T09:08:48.828518","created_date":"2025-10-10T00:00:00"}