{"id":"https://openalex.org/W2889113676","doi":"https://doi.org/10.1109/drc.2018.8444106","title":"Design and Demonstration of (AlxGal-x)<sub>2</sub>O<sub>3</sub>/Ga<sub>2</sub>O<sub>3</sub>Double Heterostructure Field Effect Transistor (DHFET)","display_name":"Design and Demonstration of (AlxGal-x)<sub>2</sub>O<sub>3</sub>/Ga<sub>2</sub>O<sub>3</sub>Double Heterostructure Field Effect Transistor (DHFET)","publication_year":2018,"publication_date":"2018-06-01","ids":{"openalex":"https://openalex.org/W2889113676","doi":"https://doi.org/10.1109/drc.2018.8444106","mag":"2889113676"},"language":"en","primary_location":{"id":"doi:10.1109/drc.2018.8444106","is_oa":false,"landing_page_url":"https://doi.org/10.1109/drc.2018.8444106","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2018 76th Device Research Conference (DRC)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5101975971","display_name":"Yuewei Zhang","orcid":"https://orcid.org/0000-0002-4192-1442"},"institutions":[{"id":"https://openalex.org/I52357470","display_name":"The Ohio State University","ror":"https://ror.org/00rs6vg23","country_code":"US","type":"education","lineage":["https://openalex.org/I52357470"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"Yuewei Zhang","raw_affiliation_strings":["Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio, USA"],"affiliations":[{"raw_affiliation_string":"Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio, USA","institution_ids":["https://openalex.org/I52357470"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5082415637","display_name":"Zhanbo Xia","orcid":"https://orcid.org/0000-0002-6827-6893"},"institutions":[{"id":"https://openalex.org/I52357470","display_name":"The Ohio State University","ror":"https://ror.org/00rs6vg23","country_code":"US","type":"education","lineage":["https://openalex.org/I52357470"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Zhanbo Xia","raw_affiliation_strings":["Ohio State University, Columbus, OH, US"],"affiliations":[{"raw_affiliation_string":"Ohio State University, Columbus, OH, US","institution_ids":["https://openalex.org/I52357470"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5069980931","display_name":"Chandan Joishi","orcid":"https://orcid.org/0000-0001-8456-4839"},"institutions":[{"id":"https://openalex.org/I52357470","display_name":"The Ohio State University","ror":"https://ror.org/00rs6vg23","country_code":"US","type":"education","lineage":["https://openalex.org/I52357470"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Chandan Joishi","raw_affiliation_strings":["Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio, USA"],"affiliations":[{"raw_affiliation_string":"Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio, USA","institution_ids":["https://openalex.org/I52357470"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5034929939","display_name":"Siddharth Rajan","orcid":"https://orcid.org/0000-0003-4241-3391"},"institutions":[{"id":"https://openalex.org/I52357470","display_name":"The Ohio State University","ror":"https://ror.org/00rs6vg23","country_code":"US","type":"education","lineage":["https://openalex.org/I52357470"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Siddharth Rajan","raw_affiliation_strings":["Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio, USA"],"affiliations":[{"raw_affiliation_string":"Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio, USA","institution_ids":["https://openalex.org/I52357470"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":4,"corresponding_author_ids":["https://openalex.org/A5101975971"],"corresponding_institution_ids":["https://openalex.org/I52357470"],"apc_list":null,"apc_paid":null,"fwci":0.1578,"has_fulltext":false,"cited_by_count":4,"citation_normalized_percentile":{"value":0.39763955,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":95},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"2"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T12529","display_name":"Ga2O3 and related materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T12529","display_name":"Ga2O3 and related materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10090","display_name":"ZnO doping and properties","score":0.9926000237464905,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12588","display_name":"Electronic and Structural Properties of Oxides","score":0.9894000291824341,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/field","display_name":"Field (mathematics)","score":0.41082414984703064},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.36508744955062866},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.3217768669128418},{"id":"https://openalex.org/keywords/mathematics","display_name":"Mathematics","score":0.10229343175888062}],"concepts":[{"id":"https://openalex.org/C9652623","wikidata":"https://www.wikidata.org/wiki/Q190109","display_name":"Field (mathematics)","level":2,"score":0.41082414984703064},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.36508744955062866},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.3217768669128418},{"id":"https://openalex.org/C33923547","wikidata":"https://www.wikidata.org/wiki/Q395","display_name":"Mathematics","level":0,"score":0.10229343175888062},{"id":"https://openalex.org/C202444582","wikidata":"https://www.wikidata.org/wiki/Q837863","display_name":"Pure mathematics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/drc.2018.8444106","is_oa":false,"landing_page_url":"https://doi.org/10.1109/drc.2018.8444106","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2018 76th Device Research Conference (DRC)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.47999998927116394,"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":2,"referenced_works":["https://openalex.org/W2724601299","https://openalex.org/W3125915965"],"related_works":["https://openalex.org/W4391375266","https://openalex.org/W2748952813","https://openalex.org/W2935759653","https://openalex.org/W3105167352","https://openalex.org/W54078636","https://openalex.org/W2954470139","https://openalex.org/W1501425562","https://openalex.org/W2902782467","https://openalex.org/W3084825885","https://openalex.org/W2298861036"],"abstract_inverted_index":{"We":[0],"report":[1],"on":[2],"the":[3,68,75,154,162,179,190,194,202,206,214,219,222,242],"first":[4],"demonstration":[5],"of":[6,51,77,108,178,208],"(AlxGal-x)":[7,121],"<sub":[8,12,16,20,34,38,84,88,122,126,130,134],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[9,13,17,21,35,39,85,89,123,127,131,135],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">2</sub>":[10,18,36,86,124,132],"O":[11,19,37,87,125,133],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">3</sub>":[14,22,40,90,128,136],"/Ga":[15,129],"double":[23,231],"heterostructure":[24,232],"field":[25,139,233],"effect":[26,140,234],"transistor":[27,141],"using":[28],"modulation":[29,137],"doping.":[30],"\u03b2":[31,82,110],"-phase":[32],"Ga":[33],"has":[41],"emerged":[42],"as":[43,102,145],"a":[44,48,91,146,229],"promising":[45,92,147],"candidate":[46,148],"for":[47,149],"wide":[49,64,98],"range":[50],"device":[52,118,151],"applications,":[53,152],"including":[54],"power":[55],"electronic":[56,150],"devices,":[57],"radio-frequency":[58],"devices":[59],"and":[60,67,104,160,186,221],"solar-blind":[61],"photodetectors.":[62],"The":[63,106],"bandgap":[65,99],"energy":[66],"predicted":[69],"high":[70],"breakdown":[71],"field,":[72],"together":[73],"with":[74],"availability":[76],"low-cost":[78],"native":[79],"substrates,":[80],"make":[81],"-Ga":[83],"material":[93],"compared":[94],"to":[95,116,156,175,239],"other":[96],"conventional":[97],"materials,":[100],"such":[101],"GaN":[103],"SiC.":[105],"use":[107],"bulk-doped":[109],"-Ga203":[111],"channels":[112,210],"makes":[113],"it":[114],"challenging":[115],"achieve":[117,165],"scaling.":[119,167],"Recently,":[120],"doped":[138],"structures":[142,204],"were":[143],"demonstrated":[144],"showing":[153],"ability":[155],"improve":[157],"channel":[158],"mobility,":[159],"at":[161,183,218],"same":[163],"time,":[164],"vertical":[166],"High":[168],"2DEG":[169,195,244],"charge":[170],"density":[171,196],"could":[172],"potentially":[173],"lead":[174],"better":[176],"screening":[177],"polar-optical":[180],"phonon":[181],"scattering":[182],"room":[184],"temperature":[185],"therefore":[187],"significantly":[188],"enhance":[189,241],"electron":[191],"mobility.":[192],"However,":[193],"that":[197],"can":[198],"be":[199,250],"confined":[200,243],"in":[201,252],"modulation-doped":[203,230],"without":[205],"introduction":[207],"parallel":[209],"is":[211,237],"limited":[212],"by":[213],"conduction":[215],"band":[216],"offset":[217],"hetero-interface":[220],"spacer":[223],"layer":[224],"thickness.":[225],"In":[226],"this":[227,253],"work,":[228],"transistors":[235],"(DHFET)":[236],"employed":[238],"further":[240],"density.":[245],"Its":[246],"electrical":[247],"characterization":[248],"will":[249],"discussed":[251],"work.":[254]},"counts_by_year":[{"year":2025,"cited_by_count":1},{"year":2024,"cited_by_count":1},{"year":2021,"cited_by_count":1},{"year":2019,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}