{"id":"https://openalex.org/W2889184463","doi":"https://doi.org/10.1109/drc.2018.8442276","title":"The Impact of Substrates on the Performance of Top-Gate p-Ga203 Field-Effect Transistors: Record High Drain Current of 980 mA/mm on Diamond","display_name":"The Impact of Substrates on the Performance of Top-Gate p-Ga203 Field-Effect Transistors: Record High Drain Current of 980 mA/mm on Diamond","publication_year":2018,"publication_date":"2018-06-01","ids":{"openalex":"https://openalex.org/W2889184463","doi":"https://doi.org/10.1109/drc.2018.8442276","mag":"2889184463"},"language":"en","primary_location":{"id":"doi:10.1109/drc.2018.8442276","is_oa":false,"landing_page_url":"https://doi.org/10.1109/drc.2018.8442276","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2018 76th Device Research Conference (DRC)","raw_type":"proceedings-article"},"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5030295039","display_name":"Jinhyun Noh","orcid":"https://orcid.org/0000-0001-9040-046X"},"institutions":[{"id":"https://openalex.org/I1288214837","display_name":"United States Naval Research Laboratory","ror":"https://ror.org/04d23a975","country_code":"US","type":"facility","lineage":["https://openalex.org/I1288214837","https://openalex.org/I1330347796","https://openalex.org/I175003984","https://openalex.org/I3130687028"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Jinhyun Noh","raw_affiliation_strings":["U.S. Naval Research Laboratory, Washington, D.C., USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"U.S. Naval Research Laboratory, Washington, D.C., USA","institution_ids":["https://openalex.org/I1288214837"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5059106002","display_name":"Mengwei Si","orcid":"https://orcid.org/0000-0003-0397-7741"},"institutions":[{"id":"https://openalex.org/I1288214837","display_name":"United States Naval Research Laboratory","ror":"https://ror.org/04d23a975","country_code":"US","type":"facility","lineage":["https://openalex.org/I1288214837","https://openalex.org/I1330347796","https://openalex.org/I175003984","https://openalex.org/I3130687028"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Mengwei Si","raw_affiliation_strings":["U.S. Naval Research Laboratory, Washington, D.C., USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"U.S. Naval Research Laboratory, Washington, D.C., USA","institution_ids":["https://openalex.org/I1288214837"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5077506146","display_name":"Hong Zhou","orcid":"https://orcid.org/0000-0002-0741-7568"},"institutions":[{"id":"https://openalex.org/I1288214837","display_name":"United States Naval Research Laboratory","ror":"https://ror.org/04d23a975","country_code":"US","type":"facility","lineage":["https://openalex.org/I1288214837","https://openalex.org/I1330347796","https://openalex.org/I175003984","https://openalex.org/I3130687028"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Hong Zhou","raw_affiliation_strings":["U.S. Naval Research Laboratory, Washington, D.C., USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"U.S. Naval Research Laboratory, Washington, D.C., USA","institution_ids":["https://openalex.org/I1288214837"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5018190506","display_name":"Marko J. Tadjer","orcid":"https://orcid.org/0000-0002-2388-2937"},"institutions":[{"id":"https://openalex.org/I1288214837","display_name":"United States Naval Research Laboratory","ror":"https://ror.org/04d23a975","country_code":"US","type":"facility","lineage":["https://openalex.org/I1288214837","https://openalex.org/I1330347796","https://openalex.org/I175003984","https://openalex.org/I3130687028"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Marko J. Tadjer","raw_affiliation_strings":["U.S. Naval Research Laboratory, Washington, D.C., USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"U.S. Naval Research Laboratory, Washington, D.C., USA","institution_ids":["https://openalex.org/I1288214837"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5063222844","display_name":"Peide D. Ye","orcid":"https://orcid.org/0000-0001-8466-9745"},"institutions":[{"id":"https://openalex.org/I1288214837","display_name":"United States Naval Research Laboratory","ror":"https://ror.org/04d23a975","country_code":"US","type":"facility","lineage":["https://openalex.org/I1288214837","https://openalex.org/I1330347796","https://openalex.org/I175003984","https://openalex.org/I3130687028"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Peide D. Ye","raw_affiliation_strings":["U.S. Naval Research Laboratory, Washington, D.C., USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"U.S. Naval Research Laboratory, Washington, D.C., USA","institution_ids":["https://openalex.org/I1288214837"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I1288214837"],"apc_list":null,"apc_paid":null,"fwci":8.9981,"has_fulltext":false,"cited_by_count":16,"citation_normalized_percentile":{"value":0.98244552,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":89,"max":99},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"2"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T12529","display_name":"Ga2O3 and related materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T12529","display_name":"Ga2O3 and related materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12588","display_name":"Electronic and Structural Properties of Oxides","score":0.9993000030517578,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10090","display_name":"ZnO doping and properties","score":0.9983000159263611,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.4652920961380005},{"id":"https://openalex.org/keywords/field-effect-transistor","display_name":"Field-effect transistor","score":0.454522043466568},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.4233786463737488},{"id":"https://openalex.org/keywords/substrate","display_name":"Substrate (aquarium)","score":0.41203102469444275},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.4009103775024414},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.30216139554977417},{"id":"https://openalex.org/keywords/quantum-mechanics","display_name":"Quantum mechanics","score":0.10914012789726257}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.4652920961380005},{"id":"https://openalex.org/C145598152","wikidata":"https://www.wikidata.org/wiki/Q176097","display_name":"Field-effect transistor","level":4,"score":0.454522043466568},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.4233786463737488},{"id":"https://openalex.org/C2777289219","wikidata":"https://www.wikidata.org/wiki/Q7632154","display_name":"Substrate (aquarium)","level":2,"score":0.41203102469444275},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.4009103775024414},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.30216139554977417},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.10914012789726257},{"id":"https://openalex.org/C111368507","wikidata":"https://www.wikidata.org/wiki/Q43518","display_name":"Oceanography","level":1,"score":0.0},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.0},{"id":"https://openalex.org/C127313418","wikidata":"https://www.wikidata.org/wiki/Q1069","display_name":"Geology","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/drc.2018.8442276","is_oa":false,"landing_page_url":"https://doi.org/10.1109/drc.2018.8442276","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2018 76th Device Research Conference (DRC)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":12,"referenced_works":["https://openalex.org/W2019468267","https://openalex.org/W2020431932","https://openalex.org/W2036680871","https://openalex.org/W2074956526","https://openalex.org/W2096074167","https://openalex.org/W2100227554","https://openalex.org/W2558508473","https://openalex.org/W2606140966","https://openalex.org/W2767337754","https://openalex.org/W3100828035","https://openalex.org/W3103864156","https://openalex.org/W3212375229"],"related_works":["https://openalex.org/W4391375266","https://openalex.org/W2935759653","https://openalex.org/W3105167352","https://openalex.org/W54078636","https://openalex.org/W2954470139","https://openalex.org/W1501425562","https://openalex.org/W2072424359","https://openalex.org/W2061674058","https://openalex.org/W2750055590","https://openalex.org/W1990516236"],"abstract_inverted_index":{"For":[0],"high":[1,26,174],"power":[2,53],"devices,":[3],"monolithic$\\beta$-Ga203":[4],"has":[5,17,34],"been":[6],"identified":[7],"as":[8,135],"an":[9,172],"emerging":[10],"ultra-wide":[11],"bandgap":[12,20],"semiconductor":[13],"material":[14,117],"because":[15],"it":[16],"a":[18,25,168,186],"large":[19],"of":[21,30,149],"4.8":[22],"eV":[23],"and":[24,55,75,107,124,181],"breakdown":[27],"electric":[28],"field":[29],"8":[31],"MV/cm":[32],"[1].$\\beta$-Ga203":[33],"also":[35],"the":[36,51,56,82,85,92,104,108,147,153,163],"potential":[37],"to":[38,68,97,114],"realize":[39],"low-cost":[40],"large-size":[41],"native":[42],"bulk":[43],"substrates":[44,133,151],"by":[45],"melt-grown":[46],"methods":[47],"[2],":[48],"[3].":[49],"However,":[50],"output":[52],"density":[54,60],"maximum":[57],"drain":[58],"current":[59],"of$\\beta$-Ga203":[61],"devices":[62,184],"can":[63,95],"be":[64,88],"seriously":[65],"limited":[66],"due":[67],"its":[69],"low":[70],"thermal":[71,175],"conductivity$(\\kappa$of":[72],"10\u201325":[73],"W/m\u00b7K":[74],"self-heating":[76],"effect":[77],"(SHE)":[78],"[4],":[79],"[5].":[80],"If":[81],"heat":[83],"from":[84],"channel":[86,99],"cannot":[87],"well":[89],"dissipated":[90],"through":[91],"substrate,":[93],"SHE":[94],"lead":[96],"significant":[98],"temperature":[100],"increase,":[101],"thus":[102],"degrade":[103],"device":[105,154],"performance":[106,155],"long-term":[109],"reliability":[110],"[6].":[111],"In":[112,157],"order":[113],"overcome":[115],"this":[116,158],"constraint,":[118],"we":[119,161],"explored":[120],"nano-membrane":[121,126],"transferring":[122],"technique":[123],"studied$\\beta$-Ga203":[125],"field-effect":[127],"transistors":[128],"(FETs)":[129],"on":[130,152,167,185],"different":[131],"foreign":[132],"such":[134],"sapphire$(\\kappa=40\\":[136],"\\mathrm{W}/\\mathrm{m}\\cdot":[137,140,179],"\\mathrm{K})$and":[138],"Si02/Si$(\\kappa=1.5\\":[139],"\\text{K":[141],"for}\\":[142],"270\\":[143],"\\text{nm":[144],"SiO}_{2})$and":[145],"compared":[146],"impact":[148],"these":[150],"[7]\u2013[9].":[156],"work,":[159],"furthermore,":[160],"demonstrate":[162],"first":[164],"B-Ga203":[165],"Fet":[166],"diamond":[169],"substrate":[170],"with":[171,183],"extremely":[173],"conductivity":[176],"of$1,000\\sim":[177],"2,200\\":[178],"\\mathrm{K}$[10]":[180],"compare":[182],"sapphire":[187],"or":[188],"Si02/Si":[189],"substrate.":[190]},"counts_by_year":[{"year":2025,"cited_by_count":1},{"year":2024,"cited_by_count":3},{"year":2022,"cited_by_count":2},{"year":2021,"cited_by_count":1},{"year":2020,"cited_by_count":2},{"year":2019,"cited_by_count":6},{"year":2018,"cited_by_count":1}],"updated_date":"2026-07-29T14:22:42.915294","created_date":"2025-10-10T00:00:00"}