{"id":"https://openalex.org/W2889010858","doi":"https://doi.org/10.1109/drc.2018.8442261","title":"Thickness Tunable Transport Properties in $\\mathbf{MoTe}_{\\mathbf{2}}$ Field Effect Transistors","display_name":"Thickness Tunable Transport Properties in $\\mathbf{MoTe}_{\\mathbf{2}}$ Field Effect Transistors","publication_year":2018,"publication_date":"2018-06-01","ids":{"openalex":"https://openalex.org/W2889010858","doi":"https://doi.org/10.1109/drc.2018.8442261","mag":"2889010858"},"language":"en","primary_location":{"id":"doi:10.1109/drc.2018.8442261","is_oa":false,"landing_page_url":"https://doi.org/10.1109/drc.2018.8442261","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2018 76th Device Research Conference (DRC)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5005613289","display_name":"Yuqi Zhu","orcid":"https://orcid.org/0000-0003-0180-0221"},"institutions":[{"id":"https://openalex.org/I219193219","display_name":"Purdue University West Lafayette","ror":"https://ror.org/02dqehb95","country_code":"US","type":"education","lineage":["https://openalex.org/I219193219"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"Yuqi Zhu","raw_affiliation_strings":["Department of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana, USA"],"affiliations":[{"raw_affiliation_string":"Department of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana, USA","institution_ids":["https://openalex.org/I219193219"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100401234","display_name":"Feng Zhang","orcid":"https://orcid.org/0000-0002-1163-2498"},"institutions":[{"id":"https://openalex.org/I219193219","display_name":"Purdue University West Lafayette","ror":"https://ror.org/02dqehb95","country_code":"US","type":"education","lineage":["https://openalex.org/I219193219"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Feng Zhang","raw_affiliation_strings":["Department of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana, USA"],"affiliations":[{"raw_affiliation_string":"Department of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana, USA","institution_ids":["https://openalex.org/I219193219"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5009261363","display_name":"Joerg Appenzeller","orcid":"https://orcid.org/0000-0002-7461-9223"},"institutions":[{"id":"https://openalex.org/I219193219","display_name":"Purdue University West Lafayette","ror":"https://ror.org/02dqehb95","country_code":"US","type":"education","lineage":["https://openalex.org/I219193219"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Joerg Appenzeller","raw_affiliation_strings":["Department of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana, USA"],"affiliations":[{"raw_affiliation_string":"Department of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana, USA","institution_ids":["https://openalex.org/I219193219"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":3,"corresponding_author_ids":["https://openalex.org/A5005613289"],"corresponding_institution_ids":["https://openalex.org/I219193219"],"apc_list":null,"apc_paid":null,"fwci":0.0971,"has_fulltext":false,"cited_by_count":1,"citation_normalized_percentile":{"value":0.38943252,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":93},"biblio":{"volume":"9","issue":null,"first_page":"1","last_page":"2"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10275","display_name":"2D Materials and Applications","score":0.9986000061035156,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10275","display_name":"2D Materials and Applications","score":0.9986000061035156,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12588","display_name":"Electronic and Structural Properties of Oxides","score":0.987500011920929,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":0.9869999885559082,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/field-effect-transistor","display_name":"Field-effect transistor","score":0.5392898321151733},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.5390647053718567},{"id":"https://openalex.org/keywords/field","display_name":"Field (mathematics)","score":0.4913100302219391},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.46789467334747314},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.46358606219291687},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.42801228165626526},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.36870044469833374},{"id":"https://openalex.org/keywords/condensed-matter-physics","display_name":"Condensed matter physics","score":0.33953434228897095},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.22082647681236267},{"id":"https://openalex.org/keywords/mathematics","display_name":"Mathematics","score":0.1527116298675537},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.07118234038352966}],"concepts":[{"id":"https://openalex.org/C145598152","wikidata":"https://www.wikidata.org/wiki/Q176097","display_name":"Field-effect transistor","level":4,"score":0.5392898321151733},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.5390647053718567},{"id":"https://openalex.org/C9652623","wikidata":"https://www.wikidata.org/wiki/Q190109","display_name":"Field (mathematics)","level":2,"score":0.4913100302219391},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.46789467334747314},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.46358606219291687},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.42801228165626526},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.36870044469833374},{"id":"https://openalex.org/C26873012","wikidata":"https://www.wikidata.org/wiki/Q214781","display_name":"Condensed matter physics","level":1,"score":0.33953434228897095},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.22082647681236267},{"id":"https://openalex.org/C33923547","wikidata":"https://www.wikidata.org/wiki/Q395","display_name":"Mathematics","level":0,"score":0.1527116298675537},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.07118234038352966},{"id":"https://openalex.org/C202444582","wikidata":"https://www.wikidata.org/wiki/Q837863","display_name":"Pure mathematics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/drc.2018.8442261","is_oa":false,"landing_page_url":"https://doi.org/10.1109/drc.2018.8442261","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2018 76th Device Research Conference (DRC)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":6,"referenced_works":["https://openalex.org/W2037187466","https://openalex.org/W2249694920","https://openalex.org/W2316313724","https://openalex.org/W2341610770","https://openalex.org/W2758345986","https://openalex.org/W2769976755"],"related_works":["https://openalex.org/W2975238137","https://openalex.org/W2624973397","https://openalex.org/W2482504159","https://openalex.org/W3098283283","https://openalex.org/W241873510","https://openalex.org/W2789630987","https://openalex.org/W2614960126","https://openalex.org/W2025077914","https://openalex.org/W2078118572","https://openalex.org/W3200762179","https://openalex.org/W1997166311","https://openalex.org/W2189370455","https://openalex.org/W2765882892","https://openalex.org/W2924044753","https://openalex.org/W3105548773","https://openalex.org/W2783654343","https://openalex.org/W2765255551","https://openalex.org/W214652698","https://openalex.org/W2169938022","https://openalex.org/W2789955661"],"abstract_inverted_index":{"One":[0],"reason":[1],"for":[2],"the":[3],"interest":[4],"in":[5,11],"studying":[6],"two-dimensional":[7],"(2D)":[8],"materials":[9],"lies":[10],"their":[12],"atomically":[13],"thin":[14],"nature":[15],"[1]-[5].":[16]},"counts_by_year":[{"year":2021,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}