{"id":"https://openalex.org/W2888989466","doi":"https://doi.org/10.1109/drc.2018.8442233","title":"Investigation of Threshold Switch OFF -State Resistance on Performance Enhancement in 2D Mos2 Phase-FETs","display_name":"Investigation of Threshold Switch OFF -State Resistance on Performance Enhancement in 2D Mos2 Phase-FETs","publication_year":2018,"publication_date":"2018-06-01","ids":{"openalex":"https://openalex.org/W2888989466","doi":"https://doi.org/10.1109/drc.2018.8442233","mag":"2888989466"},"language":"en","primary_location":{"id":"doi:10.1109/drc.2018.8442233","is_oa":false,"landing_page_url":"https://doi.org/10.1109/drc.2018.8442233","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2018 76th Device Research Conference (DRC)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5051038074","display_name":"Benjamin Grisafe","orcid":"https://orcid.org/0000-0002-4271-3071"},"institutions":[{"id":"https://openalex.org/I107639228","display_name":"University of Notre Dame","ror":"https://ror.org/00mkhxb43","country_code":"US","type":"education","lineage":["https://openalex.org/I107639228"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"Benjamin Grisafe","raw_affiliation_strings":["University of Notre Dame, Notre Dame, IN, USA"],"affiliations":[{"raw_affiliation_string":"University of Notre Dame, Notre Dame, IN, USA","institution_ids":["https://openalex.org/I107639228"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5036105393","display_name":"Suman Datta","orcid":"https://orcid.org/0000-0001-6044-5173"},"institutions":[{"id":"https://openalex.org/I107639228","display_name":"University of Notre Dame","ror":"https://ror.org/00mkhxb43","country_code":"US","type":"education","lineage":["https://openalex.org/I107639228"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Suman Datta","raw_affiliation_strings":["University of Notre Dame, Notre Dame, IN, USA"],"affiliations":[{"raw_affiliation_string":"University of Notre Dame, Notre Dame, IN, USA","institution_ids":["https://openalex.org/I107639228"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":["https://openalex.org/A5051038074"],"corresponding_institution_ids":["https://openalex.org/I107639228"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.08200075,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":"2016 september","issue":null,"first_page":"1","last_page":"2"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11128","display_name":"Transition Metal Oxide Nanomaterials","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2507","display_name":"Polymers and Plastics"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10275","display_name":"2D Materials and Applications","score":0.9984999895095825,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.3945733904838562},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.36761367321014404},{"id":"https://openalex.org/keywords/topology","display_name":"Topology (electrical circuits)","score":0.3556024432182312},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.35322684049606323},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.12291795015335083}],"concepts":[{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.3945733904838562},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.36761367321014404},{"id":"https://openalex.org/C184720557","wikidata":"https://www.wikidata.org/wiki/Q7825049","display_name":"Topology (electrical circuits)","level":2,"score":0.3556024432182312},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.35322684049606323},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.12291795015335083}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/drc.2018.8442233","is_oa":false,"landing_page_url":"https://doi.org/10.1109/drc.2018.8442233","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2018 76th Device Research Conference (DRC)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.7599999904632568,"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":7,"referenced_works":["https://openalex.org/W1199176172","https://openalex.org/W2526524982","https://openalex.org/W2527605675","https://openalex.org/W2584140384","https://openalex.org/W2742240952","https://openalex.org/W6727994223","https://openalex.org/W6742248839"],"related_works":["https://openalex.org/W2748952813","https://openalex.org/W2899084033","https://openalex.org/W2935759653","https://openalex.org/W3105167352","https://openalex.org/W54078636","https://openalex.org/W2954470139","https://openalex.org/W1501425562","https://openalex.org/W2902782467","https://openalex.org/W3084825885","https://openalex.org/W2298861036"],"abstract_inverted_index":{"Volatile":[0],"threshold":[1,50],"switch":[2],"(TS)":[3],"devices,":[4],"which":[5],"display":[6],"abrupt":[7,49],"changes":[8],"in":[9,11,28],"conductivity":[10],"response":[12],"to":[13,60,101,139],"external":[14],"stimuli":[15],"such":[16,34,46],"as":[17],"temperature":[18],"or":[19],"electric":[20],"field,":[21],"are":[22,159],"currently":[23],"being":[24],"explored":[25],"for":[26,77],"uses":[27],"novel":[29],"electronic":[30],"devices":[31,138],"[1]-[3].":[32],"One":[33],"device,":[35],"Phase-FET,":[36],"integrates":[37],"a":[38,78],"TS":[39,95,115,137,154],"with":[40,99],"the":[41,48,94,102,112],"source":[42],"ofa":[43],"conventional":[44],"MOSFET":[45,103,152,156],"that":[47],"switching":[51],"phenomena":[52],"and":[53,131,155],"variable":[54],"resistance":[55,98,117,158],"states":[56],"can":[57],"be":[58],"harnessed":[59],"produce":[61],"steep":[62],"sub-kT/q":[63],"<;60":[64],"mV/dec)":[65],"switching,":[66],"enabling":[67],"enhanced":[68,142],"I":[69,80,143],"<sub":[70,81,120,128,133,144],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[71,82,121,129,134,145],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">ON</sub>":[72,146],"at":[73],"reduced":[74],"supply":[75],"voltage":[76],"given":[79],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">OFF</sub>":[83],"[4],":[84],"[5].":[85],"Achieving":[86],"these":[87],"characteristics,":[88],"however,":[89],"requires":[90],"careful":[91],"design":[92],"of":[93,114],"OFF":[96],"-state":[97],"respect":[100],"channel":[104],"resistance.":[105],"In":[106],"this":[107],"work,":[108],"we":[109],"experimentally":[110],"demonstrate":[111],"importance":[113],"OFF-state":[116,157],"on":[118],"MoS":[119],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">2</sub>":[122,130,135],"-based":[123],"Phase-FET":[124],"performance":[125],"using":[126],"VO":[127],"Ag/HfO":[132],"/Pt":[136],"show":[140],"30x":[141],"(at":[147],"matched":[148],"IOFF)":[149],"over":[150],"baseline":[151],"when":[153],"matched.":[160]},"counts_by_year":[],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}