{"id":"https://openalex.org/W2888988143","doi":"https://doi.org/10.1109/drc.2018.8442220","title":"Effective Drive Current in Scaled FinFET and NSFET CMOS Inverters","display_name":"Effective Drive Current in Scaled FinFET and NSFET CMOS Inverters","publication_year":2018,"publication_date":"2018-06-01","ids":{"openalex":"https://openalex.org/W2888988143","doi":"https://doi.org/10.1109/drc.2018.8442220","mag":"2888988143"},"language":"en","primary_location":{"id":"doi:10.1109/drc.2018.8442220","is_oa":false,"landing_page_url":"https://doi.org/10.1109/drc.2018.8442220","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2018 76th Device Research Conference (DRC)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5015386142","display_name":"Ali Razavieh","orcid":"https://orcid.org/0000-0002-8747-2427"},"institutions":[{"id":"https://openalex.org/I35662394","display_name":"GlobalFoundries (United States)","ror":"https://ror.org/02h0ps145","country_code":"US","type":"company","lineage":["https://openalex.org/I35662394"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"A. Razavieh","raw_affiliation_strings":["GLOBALFOUNDRIES, 257 Fuller Rd., Albany, NY, USA"],"affiliations":[{"raw_affiliation_string":"GLOBALFOUNDRIES, 257 Fuller Rd., Albany, NY, USA","institution_ids":["https://openalex.org/I35662394"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5043076831","display_name":"Yicong Deng","orcid":"https://orcid.org/0009-0004-6122-2894"},"institutions":[{"id":"https://openalex.org/I35662394","display_name":"GlobalFoundries (United States)","ror":"https://ror.org/02h0ps145","country_code":"US","type":"company","lineage":["https://openalex.org/I35662394"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Y. Deng","raw_affiliation_strings":["GLOBALFOUNDRIES, 257 Fuller Rd., Albany, NY, USA"],"affiliations":[{"raw_affiliation_string":"GLOBALFOUNDRIES, 257 Fuller Rd., Albany, NY, USA","institution_ids":["https://openalex.org/I35662394"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5084305860","display_name":"P. Zeitzoff","orcid":null},"institutions":[{"id":"https://openalex.org/I35662394","display_name":"GlobalFoundries (United States)","ror":"https://ror.org/02h0ps145","country_code":"US","type":"company","lineage":["https://openalex.org/I35662394"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"P. Zeitzoff","raw_affiliation_strings":["GLOBALFOUNDRIES, 257 Fuller Rd., Albany, NY, USA"],"affiliations":[{"raw_affiliation_string":"GLOBALFOUNDRIES, 257 Fuller Rd., Albany, NY, USA","institution_ids":["https://openalex.org/I35662394"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5028817706","display_name":"M.R. Na","orcid":null},"institutions":[{"id":"https://openalex.org/I1341412227","display_name":"IBM (United States)","ror":"https://ror.org/05hh8d621","country_code":"US","type":"company","lineage":["https://openalex.org/I1341412227"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"M.R. Na","raw_affiliation_strings":["IBM, 257 Fuller Rd., Albany, NY, USA"],"affiliations":[{"raw_affiliation_string":"IBM, 257 Fuller Rd., Albany, NY, USA","institution_ids":["https://openalex.org/I1341412227"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5091597437","display_name":"Julien Frougier","orcid":"https://orcid.org/0000-0002-7858-0071"},"institutions":[{"id":"https://openalex.org/I35662394","display_name":"GlobalFoundries (United States)","ror":"https://ror.org/02h0ps145","country_code":"US","type":"company","lineage":["https://openalex.org/I35662394"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"J. Frougier","raw_affiliation_strings":["GLOBALFOUNDRIES, 257 Fuller Rd., Albany, NY, USA"],"affiliations":[{"raw_affiliation_string":"GLOBALFOUNDRIES, 257 Fuller Rd., Albany, NY, USA","institution_ids":["https://openalex.org/I35662394"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5112218158","display_name":"G. Karve","orcid":null},"institutions":[{"id":"https://openalex.org/I1341412227","display_name":"IBM (United States)","ror":"https://ror.org/05hh8d621","country_code":"US","type":"company","lineage":["https://openalex.org/I1341412227"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"G. Karve","raw_affiliation_strings":["IBM, 257 Fuller Rd., Albany, NY, USA"],"affiliations":[{"raw_affiliation_string":"IBM, 257 Fuller Rd., Albany, NY, USA","institution_ids":["https://openalex.org/I1341412227"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5015487313","display_name":"D.E. Brown","orcid":"https://orcid.org/0000-0002-9901-1505"},"institutions":[{"id":"https://openalex.org/I35662394","display_name":"GlobalFoundries (United States)","ror":"https://ror.org/02h0ps145","country_code":"US","type":"company","lineage":["https://openalex.org/I35662394"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"D.E. Brown","raw_affiliation_strings":["GLOBALFOUNDRIES, 257 Fuller Rd., Albany, NY, USA"],"affiliations":[{"raw_affiliation_string":"GLOBALFOUNDRIES, 257 Fuller Rd., Albany, NY, USA","institution_ids":["https://openalex.org/I35662394"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5074267710","display_name":"T. Yamashita","orcid":"https://orcid.org/0000-0001-9049-4777"},"institutions":[{"id":"https://openalex.org/I1341412227","display_name":"IBM (United States)","ror":"https://ror.org/05hh8d621","country_code":"US","type":"company","lineage":["https://openalex.org/I1341412227"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"T. Yamashita","raw_affiliation_strings":["IBM, 257 Fuller Rd., Albany, NY, USA"],"affiliations":[{"raw_affiliation_string":"IBM, 257 Fuller Rd., Albany, NY, USA","institution_ids":["https://openalex.org/I1341412227"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5078572020","display_name":"E. Nowak","orcid":"https://orcid.org/0009-0006-5217-8005"},"institutions":[{"id":"https://openalex.org/I35662394","display_name":"GlobalFoundries (United States)","ror":"https://ror.org/02h0ps145","country_code":"US","type":"company","lineage":["https://openalex.org/I35662394"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"E.J. Nowak","raw_affiliation_strings":["GLOBALFOUNDRIES, 257 Fuller Rd., Albany, NY, USA"],"affiliations":[{"raw_affiliation_string":"GLOBALFOUNDRIES, 257 Fuller Rd., Albany, NY, USA","institution_ids":["https://openalex.org/I35662394"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":9,"corresponding_author_ids":["https://openalex.org/A5015386142"],"corresponding_institution_ids":["https://openalex.org/I35662394"],"apc_list":null,"apc_paid":null,"fwci":1.1588,"has_fulltext":false,"cited_by_count":16,"citation_normalized_percentile":{"value":0.79935982,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":97},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"2"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.5510953068733215},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.41845810413360596},{"id":"https://openalex.org/keywords/topology","display_name":"Topology (electrical circuits)","score":0.38005316257476807},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.3346964716911316},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.16425561904907227},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.11216357350349426}],"concepts":[{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.5510953068733215},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.41845810413360596},{"id":"https://openalex.org/C184720557","wikidata":"https://www.wikidata.org/wiki/Q7825049","display_name":"Topology (electrical circuits)","level":2,"score":0.38005316257476807},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3346964716911316},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.16425561904907227},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.11216357350349426}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/drc.2018.8442220","is_oa":false,"landing_page_url":"https://doi.org/10.1109/drc.2018.8442220","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2018 76th Device Research Conference (DRC)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":3,"referenced_works":["https://openalex.org/W1560300163","https://openalex.org/W2584695830","https://openalex.org/W2744406216"],"related_works":["https://openalex.org/W4391375266","https://openalex.org/W2748952813","https://openalex.org/W2935759653","https://openalex.org/W3105167352","https://openalex.org/W54078636","https://openalex.org/W2954470139","https://openalex.org/W1501425562","https://openalex.org/W2902782467","https://openalex.org/W3084825885","https://openalex.org/W2298861036"],"abstract_inverted_index":{"This":[0],"work":[1],"investigates":[2],"the":[3,9,48,74],"impact":[4],"of":[5,23,79,88,112],"CMOS":[6],"scaling":[7],"on":[8],"DC":[10],"effective":[11],"drive":[12],"current,":[13],"<tex":[14,18,42,62,80,89,96],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[15,19,43,63,81,90,97],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">$I_{eff}$</tex>":[16],"[1],":[17],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">$I_{eff}=1/2\\times(I_{high}+I_{low})=1/2\\times":[20],"[d_{s}(V_{gs}=0.5V_{dd},V_{ds}=V_{dd})+(V_{gs}=V_{dd},V_{ds}=V_{dd}/2)$</tex>":[21],"]":[22],"aggressively":[24,52],"scaled":[25,53],"MOSFETs":[26,54],"down":[27],"to":[28,46,122],"7nm":[29],"node":[30],"technology.":[31],"FinFET":[32],"and":[33,41,93],"Nanosheet":[34],"(NSFET)":[35],"architectures":[36],"[2],":[37],"[3]":[38],"behave":[39],"similarly,":[40],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">$l_{eff)}$</tex>":[44],"continues":[45],"predict":[47],"intrinsic":[49],"delay":[50],"for":[51,55,60],"both":[56],"device":[57],"architectures,":[58],"even":[59],"supply-voltages":[61],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">$(V_{dd})$</tex>":[64],"as":[65,67,85],"low":[66],"~0.2V,":[68],"where":[69],"these":[70],"devices":[71],"operate":[72],"in":[73,114],"subthreshold":[75],"regime.":[76],"The":[77],"ratio":[78,103],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">$l_{eff}/I_{on},":[82],"I_{on}=I_{ds}(V_{ds}=V_{gs}=V_{dd})$</tex>":[83],",":[84,92],"a":[86,109,115],"function":[87],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">$V_{dd}$</tex>":[91],"threshold":[94],"voltage":[95],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">$(V_{th})$</tex>":[98],")":[99],"show":[100],"that":[101,117],"this":[102],"can":[104,118],"be":[105,119],"significantly":[106],"modulated":[107],"about":[108],"typical":[110],"value":[111],"~0.5,":[113],"manner":[116],"easily":[120],"related":[121],"classical":[123],"MOSFET":[124],"behavior.":[125]},"counts_by_year":[{"year":2025,"cited_by_count":1},{"year":2024,"cited_by_count":2},{"year":2023,"cited_by_count":1},{"year":2022,"cited_by_count":3},{"year":2021,"cited_by_count":4},{"year":2020,"cited_by_count":1},{"year":2019,"cited_by_count":3},{"year":2018,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}